HMC816LP4E

HMC816LP4E v00.1108 Typical Applications Features The HMC816LP4E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 22 dB • BTS & Infrastructure High Output IP3: +37 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radio 50 Ohm Matched Input/Output • Multi-Channel Applications TE 24 Lead 4x4mm QFN Package: 16 mm2 Functional Diagram General Description LE The HMC816LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 230 and 660 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 22 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC816LP4E shares the same package and pinout with the HMC817LP4E & HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application. B SO Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Electrical Specifications, TA = +25° C, O Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2 Parameter Vdd = +3V Min. Frequency Range Gain Typ. Max. Min. 230 - 450 17 Gain Variation Over Temperature Vdd = +5V Typ. Max. Min. 450 - 660 21 14 0.001 Min. 19 15 MHz 19 dB 0.007 dB/ °C 0.5 13 17 15 16 dB Output Return Loss 12 10 13 10 dB 21 dBm 21 dBm 37 dBm Saturated Output Power (Psat) 10 Output Third Order Intercept (IP3) Supply Current (Idd) 14 13 16 15 15 14 16.5 16 26 24 34 28 44 24 34 0.9 Units Noise Figure 10 0.5 Max. 450 - 660 22 0.005 0.9 Typ. Input Return Loss Output Power for 1 dB Compression (P1dB) 0.5 Max. 230 - 450 17 0.002 0.9 Typ. 0.5 19 18 20 18 34 44 68 97 126 68 97 0.9 126 dB mA * Rbias sets current, see application circuit herein 7-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order 781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Broadband Gain & Return Loss 20 S21 22 10 GAIN (dB) Vdd= 5V Vdd= 3V 5 0 S22 -5 -20 S11 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 14 1.2 Gain vs. Temperature [2] GAIN (dB) B SO +25C +85C - 40C 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 O +25C +85C - 40C -10 -15 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Reverse Isolation vs. Temperature [1] 0 0 REVERSE ISOLATION (dB) -5 +25C +85C - 40C -5 -5 0.7 Output Return Loss vs. Temperature [1] RETURN LOSS (dB) 0.25 0 22 0.2 0.2 1.4 Input Return Loss vs. Temperature [1] 24 14 +25C +85C - 40C LE -25 16 18 16 -15 18 20 TE -10 RETURN LOSS (dB) RESPONSE (dB) 15 Amplifiers - Low Noise - SMT 24 25 20 7 Gain vs. Temperature [1] -10 -15 -10 +25C +85C - 40C -15 -20 -25 -30 -35 -40 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 [1] Vdd = 5V [2] Vdd = 3V Information furnisheddelivery by Analog Devices believed orders: to be accurate and reliable. However, Corporation, no For price, delivery, andRoad, to place orders: Analog Devices, For price, and tois place Hittite Microwave 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7-2 HMC816LP4E v00.1108 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Noise Figure vs. Temperature [1] P1dB vs. Temperature 24 22 +85C P1dB (dBm) 20 0.6 +25 C 0.4 -40C 0.3 0.4 0.5 0.6 0.2 0.4 LE IP3 (dBm) Vdd=3V +25 C +85 C - 40 C 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.45 0.5 0.55 0.6 0.65 0.7 Vdd=5V O 35 30 25 +25 C +85 C - 40 C Vdd=3V 20 0.2 0.7 Output IP3 and Supply Current vs. Supply Voltage @ 400 MHz 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) Output IP3 and Supply Current vs. Supply Voltage @ 500 MHz 144 43 140 36 126 40 120 34 108 37 100 32 90 34 80 30 72 28 54 31 60 26 36 28 40 24 18 25 20 0 22 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) 2.7 Idd (mA) 38 Idd (mA) IP3 (dBm) 0.35 40 Vdd=5V B SO 10 0.3 45 22 12 0.25 Output IP3 vs. Temperature 24 14 +25 C +85 C - 40 C FREQUENCY (GHz) Psat vs. Temperature 16 Vdd=3V 10 0.2 0.7 FREQUENCY (GHz) 18 16 12 0 20 18 TE Vdd=5V Vdd=3V 0.2 0.2 Vdd=5V 14 IP3 (dBm) NOISE FIGURE (dB) 0.8 Psat (dBm) Amplifiers - Low Noise - SMT 1 0 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [1] Measurement reference plane shown on evaluation PCB drawing. 7-3 Information furnisheddelivery by Analog Devices believed orders: to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: AnalogMA Devices, For price, and tois place Hittite Microwave Corporation, 20 Alpha Chelmsford, 01824Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mayPhone: result from 978-250-3343 its use. Specifications subject to change without notice. No Fax: 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Support: Phone: 978-250-3343 or apps@hittite.com Trademarks and registered trademarks areApplication the property of their respective owners. HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Pout Gain PAE 35 30 25 20 10 5 0 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -18 -16 -14 -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) LE INPUT POWER (dBm) Power Compression @ 500 MHz [2] Power Compression @ 500 MHz [1] 45 50 40 35 Pout Gain PAE 30 25 20 15 10 5 0 -18 B SO Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE 35 TE 15 40 Amplifiers - Low Noise - SMT 40 Pout (dBm), GAIN (dB), PAE (%) 45 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 45 45 40 35 25 20 15 10 5 0 4 -18 -16 -14 -12 Gain P1dB 1 24 0.8 22 18 0.4 16 14 2.7 Noise Figure 3.1 3.5 3.9 4.3 4.7 SUPPLY VOLTAGE (V) -8 -6 -4 -2 0 2 5.1 0.2 0 5.5 1 Gain P1dB 0.8 20 0.6 18 0.4 16 14 2.7 Noise Figure 3.1 3.5 3.9 4.3 4.7 5.1 0.2 NOISE FIGURE (dB) 0.6 NOISE FIGURE (dB) 20 GAIN (dB) & P1dB (dBm) 24 22 -10 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 500 MHz O Gain, Power & Noise Figure vs. Supply Voltage @ 400 MHz Pout Gain PAE 30 INPUT POWER (dBm) GAIN (dB) & P1dB (dBm) 7 Power Compression @ 400 MHz [2] Power Compression @ 400 MHz [1] 0 5.5 SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: AnalogMA Devices, For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Chelmsford, 01824Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that mayPhone: result from 978-250-3343 its use. Specifications subject to change without notice. No Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC816LP4E v00.1108 Output IP3 vs. Rbias @ 500 MHz 40 38 38 36 36 34 34 IP3 (dBm) 40 32 30 26 Vdd= 3V Vdd= 5V 24 22 500 1000 22 500 10000 1000 LE Magnitude Balance [1] 0 1 RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 B SO -10 0.3 0.4 0.5 0.6 0.7 0.5 0 -0.5 -1 0.2 0.3 FREQUENCY (GHz) O 2 Vdd (V) 1 0.5 0.6 0.7 3V Rbias Ω 5V -1 Idd (mA) Min Max Recommended 4.7k Open circuit 10k 34 820 65 0 -2 0.2 0.4 FREQUENCY (GHz) Absolute Bias Register for Idd Range & Recommended Bias Resistor Phase Balance [1] PHASE BALANCE (degrees) 10000 Rbias (Ohms) Cross Channel Isolation [1] -40 0.2 Vdd= 3V Vdd= 5V 24 Rbias (Ohms) -30 30 28 26 -20 32 TE 28 AMPLITUDE BALANCE (dB) IP3 (dBm) Output IP3 vs. Rbias @ 400 MHz ISOLATION (dB) Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz 0 Open circuit 2k 80 3.92k 90 10k 97 With Vdd = 3V Rbias