HMC903-SX

6 GHz to 18 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier HMC903 Data Sheet FEATURES GENERAL DESCRIPTION Noise figure: 1.6 dB typical Small signal gain: 19 dB typical Output P1dB: 16 dBm typical Single-supply voltage: 3.5 V at 90 mA typical Output IP3: 27 dBm typical 50 Ω matched input/output Self biased with optional bias control for quiescent drain control (IDQ) reduction with no radio frequency (RF) applied Die size: 1.33 mm × 1.08 mm × 0.102 mm The HMC903 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA), which is self biased with the optional bias control for IDQ reduction. The device operates between 6 GHz and 18 GHz. This LNA provides 19 dB of small signal gain, 1.6 dB noise figure, and an output third-order intercept (IP3) of 27 dBm, requiring only 90 mA of supply current from a 3.5 V supply. The output power for a 1 dB compression (P1dB) of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The HMC903 also features inputs/outputs that are dc blocked and internally matched to 50 Ω for ease of integration into multichip modules (MCMs). All data is taken with the HMC903 in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter with bonds of 0.31 mm (12 mil) length. APPLICATIONS Point to point radios Point to multipoint radios Military and space Test instrumentation FUNCTIONAL BLOCK DIAGRAM HMC903 2 3 VDD1 1 VDD2 RFIN 4 RFOUT VGG1 5 14481-001 6 VGG2 Figure 1. Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC903 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Typical Performance Characteristics ..............................................6 Applications ....................................................................................... 1 Theory of Operation .........................................................................8 General Description ......................................................................... 1 Applications Information .................................................................9 Functional Block Diagram .............................................................. 1 Mounting and Bonding Techniques for Millimeterwave GaAs MMICs ............................................................................................. 10 Revision History ............................................................................... 2 Specifications..................................................................................... 3 Handling Precautions ................................................................ 10 Electrical Specifications ............................................................... 3 Typical Application Circuits ..................................................... 11 Absolute Maximum Ratings ............................................................ 4 Assembly Diagrams ................................................................... 12 ESD Caution .................................................................................. 4 Pin Configuration and Function Descriptions ............................. 5 Outline Dimensions ....................................................................... 13 Ordering Guide .......................................................................... 13 Interface Schematics..................................................................... 5 REVISION HISTORY 1/2018—Rev. B to Rev. C Changes to Table 3 ............................................................................ 4 7/2017—Rev. A to Rev. B Changed HMC903-Die to HMC903 ........................... Throughout Changes to RF Input Power Parameter, Table 2 ........................... 4 This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. 3/2017—Rev. 01.0712 to Rev. A Updated Format .................................................................. Universal Changes to Features Section ............................................................1 Changes to Table 1.............................................................................3 Added Electrostatic Discharge (ESD) Sensitivity, Human Body Model (HBM) Parameter, Table 2 ...................................................4 Changes to Table 3.............................................................................5 Added Theory of Operation Section and Figure 19; Renumbered Sequentially .........................................................................................8 Added Applications Information Section ......................................9 Changes to Figure 20 and Figure 21 ............................................ 10 Added Typical Application Circuits Section and Figure 22 and Figure 23 .......................................................................................... 11 Updated Outline Dimensions ....................................................... 13 Changes to Ordering Guide .......................................................... 13 Rev. C | Page 2 of 13 Data Sheet HMC903 SPECIFICATIONS ELECTRICAL SPECIFICATIONS TA = 25°C, VDD1 = VDD2 = 3.5 V, IDQ = 90 mA. VGG1 = VGG2 = open for normal, self biased operation. Table 1. Parameter FREQUENCY RANGE GAIN Gain Variation over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept NOISE FIGURE SUPPLY CURRENT Symbol P1dB PSAT IP3 NF IDQ Min 6 17 Typ 19 0.013 Unit GHz dB dB/°C 11 13 dB dB 16 18 27 1.6 90 dBm dBm dBm dB mA Rev. C | Page 3 of 13 Max 18 2.1 Test Conditions/Comments VDD = 3.5 V, VGG1 = VGG2 = open HMC903 Data Sheet ABSOLUTE MAXIMUM RATINGS Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Table 2. Parameter Drain Bias Voltage RF Input Power Gate Bias Voltages VGG1 VGG2 Channel Temperature Continuous Power Dissipation, PDISS (T = 85°C, Derate 6.9 mW/°C Above 85°C) Thermal Resistance (Channel to Die Bottom) Storage Temperature Range Operating Temperature Range Electrostatic Discharge (ESD) Sensitivity, Human Body Model (HBM) Rating 4.5 V 20 dBm −2 V to +0.2 V −2 V to +0.2 V 175°C 0.62 W ESD CAUTION 144.8°C/W −65°C to +150°C −55°C to +85°C Class 0, passed 150 V Rev. C | Page 4 of 13 Data Sheet HMC903 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 2 3 VDD1 VDD2 HMC903 RFIN RFOUT VGG1 VGG2 6 5 4 14481-002 1 Figure 2. Pin Configuration Table 3. Pin Function Descriptions Pin No. 1 2, 3 Mnemonic RFIN VDD1, VDD2 4 5, 6 RFOUT VGG2, VGG1 Die Bottom GND Description Radio Frequency Input. This pad is matched to 50 Ω. See Figure 3 for the interface schematic. Power Supply Voltages. Power supply voltage for the amplifier. See Figure 24 and Figure 25 for required external components. See Figure 4 for the interface schematic. Radio Frequency Output. This pad is matched to 50 Ω. See Figure 5 for the interface schematic. Gate Control Voltages. Optional gate control for amplifier. When left open, the amplifier is self biased. Applying a negative voltage reduces the current. See Figure 6 for the interface schematic. Ground. Die bottom must be connected to RF/dc ground. See Figure 7 for the interface schematic. INTERFACE SCHEMATICS ESD 14481-006 14481-003 RFIN VGG1, VGG2 Figure 6. VGG1, VGG2 Interface Schematic Figure 3. RFIN Interface Schematic GND 14481-004 14481-007 VDD1, VDD2 Figure 7. GND Interface Schematic RFOUT ESD 14481-005 Figure 4. VDD1, VDD2 Interface Schematic Figure 5. RFOUT Interface Schematic Rev. C | Page 5 of 13 HMC903 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 25 +85°C +25°C –55°C 15 23 S11 S21 S22 GAIN (dB) 5 –5 21 19 –25 3 5 7 9 11 13 15 17 19 21 FREQUENCY (GHz) 15 6 12 14 16 18 Figure 11. Gain vs. Frequency at Various Temperature 0 0 +85°C +25°C –55°C +85°C +25°C –40°C –5 OUTPUT RETURN LOSS (dB) –5 –10 –15 –20 –10 –15 –20 6 8 10 12 14 16 18 FREQUENCY (GHz) –30 14481-009 –30 6 8 10 12 14 16 18 FREQUENCY (GHz) 14481-012 –25 –25 Figure 12. Output Return Loss vs. Frequency at Various Temperatures Figure 9. Input Return Loss vs. Frequency at Various Temperatures 6 35 +85°C +25°C –55°C 30 OUTPUT IP3 (dBm) 5 +85°C +25°C –40°C 4 3 2 1 25 20 15 0 6 8 10 12 14 16 18 FREQUENCY (GHz) 14481-010 10 Figure 10. Noise Figure vs. Frequency at Various Temperatures 5 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 13. Output IP3 vs. Frequency as Various Temperatures Rev. C | Page 6 of 13 14481-013 INPUT RETURN LOSS (dB) 10 FREQUENCY (GHz) Figure 8. Broadband Gain and Return Loss vs. Frequency NOISE FIGURE (dB) 8 14481-011 17 –15 14481-008 BROADBAND GAIN AND RETURN LOSS (dB) 25 Data Sheet HMC903 24 25 +85°C +25°C –55°C POUT (dBm), GAIN (dB), PAE (%) 20 20 P1dB (dBm) GAIN POUT PAE 15 10 5 16 12 8 4 10 12 14 16 18 FREQUENCY (GHz) –4 –21 –12 –9 22 +85°C +25°C –55°C 20 GAIN (dB), P1dB (dBm) –10 –20 –30 –40 –50 8 10 12 14 16 18 FREQUENCY (GHz) Figure 15. Reverse Isolation vs. Frequency at Various Temperatures 20 15 10 0 12 14 16 FREQUENCY (GHz) 18 14481-016 5 10 3 6 5 16 4 14 3 12 2 10 1 3.5 0 4.0 Figure 18. Gain, P1dB, and Noise Figure vs. Supply Voltage (VDD) at 12 GHz +85°C +25°C –55°C 8 0 7 NOISE FIGURE GAIN P1dB VDD (V) 25 6 –3 18 8 3.0 14481-015 –60 6 –6 INPUT POWER (dBm) 0 REVERSE ISOLATION (dB) –15 Figure 17. POUT, Gain, and Power Added Efficency (PAE) vs. Input Power at 12 GHz Figure 14. P1dB vs. Frequency at Various Temperatures PSAT (dBm) –18 NOISE FIGURE (dB) 8 14481-018 6 14481-014 0 14481-017 0 Figure 16. PSAT vs. Frequency at Various Temperatures Rev. C | Page 7 of 13 HMC903 Data Sheet THEORY OF OPERATION The HMC903 is a GaAs, pHEMT, MMIC, low noise amplifier. The HMC903 amplifier uses two gain stages in series. The basic schematic for the amplifier is shown in Figure 19, which forms a low noise amplifier operating from 6 GHz to 18 GHz with excellent noise figure performance. VDD1 VDD2 RFIN VGG1 VGG2 14481-019 RFOUT Figure 19. Basic Schematic for the HMC903 The HMC903 has single-ended input and output ports with impedances nominally equal to 50 Ω over the 6 GHz to 18 GHz frequency range. Consequently, the device can be directly inserted into a 50 Ω system with no required impedance matching circuitry; therefore, multiple HMC903 amplifiers can be cascaded back to back without the need for external matching circuitry. The input and output impedances are sufficiently stable vs. variations in temperature and supply voltage that no impedance matching compensation is required. It is critical to supply very low inductance ground connections to the exposed pad to ensure stable operation. To achieve optimal performance from the HMC903 and to prevent damage to the device, do not exceed the absolute maximum ratings. Rev. C | Page 8 of 13 Data Sheet HMC903 APPLICATIONS INFORMATION Figure 25 shows the basic connections for operating the HMC903 in self biased operation. Both the RFIN and the RFOUT ports have on-chip dc block capacitors, eliminating the need for external ac coupling capacitors. The recommended bias sequence during power-down is as follows: The HMC903 has VGG1 and VGG2 optional gate bias pads. When these pads are left open, the amplifier runs in self biased operation with typical IDQ = 90 mA when VDD = 3.5 V. When using the optional VGG1 and VGG2 gate bias pads, use the recommended bias sequencing to prevent damage to the amplifier. 3. 4. The recommended bias sequence during power-up is as follows: 1. 2. 3. 4. 5. Connect to GND. Set VGG1 and VGG2 to −2 V. Set VDD1 and VDD2 to +3.5 V. Increase VGG1 and VGG2 to achieve a typical IDQ = 90 mA. Apply the RF signal. 1. 2. Turn off the RF signal. Decrease VGG1 and VGG2 to −2 V to achieve a typical IDQ = 0 mA. Decrease VDD1 and VDD2 to 0 V. Increase VGG1 and VGG2 to 0 V. The bias conditions previously listed (VDD1 and VDD2 = 3.5 V and IDQ = 90 mA) are the recommended operating points to achieve optimum performance. The data used in this data sheet is taken with the recommended bias conditions listed in the Electrical Specifications section. If the HMC903 is used with different bias conditions than what is recommended, a different performance than what is shown in the Typical Performance Characteristics section can result. Decreasing the VDD level has a negligible effect on gain and NF performance, but reduces P1dB. This behavior is shown in Figure 18. For applications where the P1dB requirement is not stringent, the HMC903 can be down biased to reduce power consumption. Rev. C | Page 9 of 13 HMC903 Data Sheet MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS The HMC903 is attached directly to the ground plane eutectically or with conductive epoxy (see the General Handling section, the Mounting section, and the Wire Bonding section). The 50 Ω microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the HMC903 (see Figure 20). When using 0.254 mm (10 mil) thick alumina thin film substrates, the die is raised 0.150 mm (6 mil) so the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick molybdenum heat spreader (moly tab), which then attaches to the ground plane (see Figure 21). WIRE BOND Handle the chips in a clean environment. Do not attempt to clean the chip using liquid cleaning systems. Static Sensitivity Follow ESD precautions to protect against ESD strikes. Transients Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the HMC903 has fragile air bridges and must not be touched with the vacuum collet, tweezers, or fingers. 14481-020 RF GROUND PLANE Mounting The HMC903 is back metallized and can be die mounted with gold tin (AuSn) eutectic preforms or with electrically conductive epoxy. The mounting surface must be clean and flat. Figure 20. Routing RF Signal 0.102mm (0.004") THICK GaAs MMIC Eutectic Die Attach WIRE BOND 0.076mm (0.003") An 80% gold/20% tin preform is recommended with a work surface temperature of 255°C and a tool temperature of 265°C. When hot 90% nitrogen/10% hydrogen gas is applied, the tool tip temperature is 290°C. Do not expose the chip to a temperature greater than 320°C for more than 20 sec. No more than 3 sec of scrubbing is required for attachment. 14481-021 RF GROUND PLANE 0.254mm (0.010") THICK ALUMINA THIN FILM SUBSTRATE Cleanliness General Handling 0.076mm (0.003") 0.150mm (0.006") THICK MOLY TAB All bare die are placed in either waffle or gel-based ESD protective containers and then sealed in an ESD protective bag for shipment. After opening the sealed ESD protective bag, store all die in a dry nitrogen environment. Suppress instrument and bias supply transients while bias is applied. Use the shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004") THICK GaAs MMIC 0.127mm (0.005") THICK ALUMINA THIN FILM SUBSTRATE Storage Epoxy Die Attach Figure 21. Routing RF Signal with Moly Tab Microstrip substrates are placed as close to the die as possible to minimize bond wire length. Typical die to substrate spacing is 0.076 mm to 0.152 mm (3 mil to 6 mil). HANDLING PRECAUTIONS Follow the precautions detailed in the following sections to avoid permanent damage to the device. Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the HMC903 after it is placed into position. Cure epoxy per the schedule of the manufacturer. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds are thermosonically bonded with a force of 40 g to 60 g. DC bonds of 0.001 in (0.025 mm) diameter, thermosonically bonded, are recommended. Create ball bonds with a force of 40 g to 50 g and wedge bonds at 18 g to 22 g. Create bonds with a nominal stage temperature of 150°C. A minimum amount of ultrasonic energy is applied to achieve reliable bonds. All bonds are as short as possible, less than 12 mil (0.31 mm). Rev. C | Page 10 of 13 Data Sheet HMC903 TYPICAL APPLICATION CIRCUITS VDD1 VDD2 4.7µF 0.01µF 100pF 100pF 0.01µF 4.7µF 2 3 RFIN RFOUT 4 1 5 6 4.7µF 0.01µF 100pF 100pF 0.01µF 14481-024 VGG2 VGG1 4.7µF Figure 22.Typical Application Circuit with Gate Control Option VDD1 VDD2 4.7µF 0.01µF 100pF 100pF 0.01µF 4.7µF 2 3 1 4 RFOUT 14481-025 RFIN Figure 23. Typical Application Circuit with Self Biased Option Rev. C | Page 11 of 13 HMC903 Data Sheet ASSEMBLY DIAGRAMS 4.7µF 4.7µF 0.01µF 0.01µF 100pF 100pF TO VDD1 SUPPLY TO VDD2 SUPPLY ALL BOND WIRES ARE 1mil DIAMETER VDD2 VDD1 3mil NOMINAL GAP RFIN RFOUT VGG1 TO VGG1 SUPPLY 100pF VGG2 100pF 0.01µF TO VGG2 SUPPLY 0.01µF 4.7µF 4.7µF 14481-022 50Ω TRANSMISSION LINE Figure 24. Assembly Diagram with Gate Control Option 4.7µF 4.7µF 0.01µF 0.01µF 100pF 100pF TO VDD1 SUPPLY VDD1 TO VDD2 SUPPLY ALL BOND WIRES ARE 1mil DIAMETER VDD2 3mil NOMINAL GAP RFIN RFOUT VGG1 VGG2 Figure 25. Assembly Diagram with Self Biased Option Rev. C | Page 12 of 13 14481-023 50Ω TRANSMISSION LINE Data Sheet HMC903 OUTLINE DIMENSIONS 1.330 0.102 0.150 0.535 0.450 *AIRBRIDGE AREA 3 2 0.245 1.080 0.200 1 0.200 4 0.392 0.265 6 0.022 5 0.070 0.367 0.186 TOP VIEW 0.338 SIDE VIEW 0.299 *This die utilizes fragile air bridges. Any pickup tools used must not contact this area. 12-22-2016-A 0.099 Figure 26. 6-Pad Bare Die [CHIP] (C-6-10) Dimensions shown in millimeters ORDERING GUIDE Model 1 HMC903 HMC903-SX 1 Temperature Range −55°C to +85°C −55°C to +85°C Package Description 6-Pad Bare Die [CHIP] 6-Pad Bare Die [CHIP] The HMC903-SX is a sample order of two devices. ©2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D14481-0-1/18(C) Rev. C | Page 13 of 13 Package Option C-6-10 C-6-10