AONR66406
40V N-Channel AlphaSGT TM
General Description
Product Summary
VDS
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Logic Level Driving
• Excellent Gate Charge x RDS(ON) Product (FOM)
• RoHS and Halogen-Free Compliant
40V
30A
ID (at VGS=10V)
Applications
RDS(ON) (at VGS=10V)
< 6.1mΩ
RDS(ON) (at VGS=4.5V)
< 9.4mΩ
100% UIS Tested
100% Rg Tested
• High Frequency Switching and Synchronous
Rectification
• DC-Motor Driver
Top View
DFN 3x3 EP
Bottom View
D
Top View
Pin 1
1
8
2
7
3
6
4
5
G
S
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AONR66406
DFN 3x3 EP
Tape & Reel
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
Avalanche energy
L=0.3mH
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: October 2017
22
20
A
EAS
60
mJ
27
Steady-State
Steady-State
W
10.5
5.0
RθJA
RθJC
W
3.2
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PDSM
Junction and Storage Temperature Range
A
17.5
PD
TA=25°C
V
105
IDSM
TA=70°C
±20
30
IDM
TA=25°C
Units
V
30
ID
TC=100°C
Maximum
40
-55 to 150
Typ
20
45
3.8
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Max
25
55
4.6
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
AONR66406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
40
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
VGS=10V, ID=20A
±100
nA
2.0
2.5
V
5.0
6.1
7.5
9.1
9.4
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=18A
7.4
gFS
Forward Transconductance
VDS=5V, ID=20A
70
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
mΩ
S
1
V
30
A
1480
pF
245
pF
13
pF
1.8
2.7
Ω
20
30
nC
Qg(4.5V)
Total Gate Charge
8.5
14
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
Output Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=20V, ID=20A
VGS=0V, VDS=20V
VGS=10V, VDS=20V, RL=1.0Ω,
RGEN=3Ω
0.9
mΩ
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
Qoss
f=1MHz
µA
5
1.5
Units
V
VDS=40V, VGS=0V
IDSS
Max
nC
5.5
nC
3
nC
10
nC
7.5
ns
2
ns
23
ns
3
ns
IF=20A, di/dt=500A/µs
11
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
21
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4.6°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2017
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Page 4 of 6
AONR66406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
Current rating ID (A)
Power Dissipation (W)
40
30
20
10
20
10
0
0
0
25
50
75
100
125
150
0
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
1
TA=25°C
Power (W)
Eoss(uJ)
1000
100
0.5
10
0
0
10
20
30
40
1
1E-05
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H)
VDS (Volts)
Figure 14: Coss stored Energy
ZθJA Normalized Transient
Thermal Resistance
0.001
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
0.01
PDM
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: October 2017
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Page 5 of 6
AONR66406
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: October 2017
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6
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