CTA2P1N-7

CTA2P1N PART OBSOLETE - CONTACT US COMPLEX TRANSISTOR ARRAY Features OBSOLETE – PART DISCONTINUED • • • • • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 3 and 4) A B C Mechanical Data • • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: A80, See Page 5 Ordering Information: See Page 5 Weight: 0.006 grams (approximate) Maximum Ratings, Total Device H K M J D CQ1 G Q2 SQ2 EQ1 BQ1 DQ2 F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10  K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm Q1 Q2 @TA = 25°C unless otherwise specified Symbol Value Power Dissipation Characteristic (Note 2) Pd 150 mW Thermal Resistance, Junction to Ambient (Note 2) RθJA 833 °C/W Tj, TSTG -55 to +150 °C Operating and Storage Temperature Range Maximum Ratings, Q1, MMBT4403 PNP Transistor Element Characteristic Unit @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Collector Current - Continuous Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Drain Current Notes: Continuous Pulsed (Note 2) Continuous Continuous @ 100°C Pulsed Symbol Value Units VDSS 60 V 60 V VDGR VGSS ID ±20 ±40 115 73 800 V mA 1. No purposefully added lead. 2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. CTA2P1N Document number: DS30296 Rev. 10 - 4 1 of 7 www.diodes.com October 2021 © Diodes Incorporated Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element OBSOLETE – PART DISCONTINUED @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL -40 -40 -5.0      -100 -100 V V V nA nA hFE 30 60 100 100 20    300  Collector-Emitter Saturation Voltage VCE(SAT)  Base-Emitter Saturation Voltage VBE(SAT) -0.75  -0.40 -0.75 -0.95 -1.30 Ccb Ceb hie hre hfe hoe   1.5 0.1 60 1.0 8.5 30 15 8.0 500 100 pF pF kΩ x 10-4  µS Current Gain-Bandwidth Product fT 200  MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf     15 20 225 30 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance  V V Test Condition IC = -100µA, IE = 0 IC = -1.0mA, IB = 0 IE = -100µA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10µA IDSS   µA VDS = 60V, VGS = 0V IGSS    1.0 500 ±10 nA VGS = ±20V, VDS = 0V VGS(th) 1.0  ID(ON) gFS 0.5 80 2.0 7.5 13.5   V RDS (ON)  3.2 4.4 1.0  A mS VDS = VGS, ID =-250µA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Ciss Coss Crss    22 11 2.0 50 25 5.0 pF pF pF Turn-On Delay Time tD(ON)  7.0 20 ns Turn-Off Delay Time tD(OFF)  11 20 ns Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Notes: @ TC = 25°C @ TC = 125°C @ Tj = 25°C @ Tj = 125°C Ω Test Condition VDS = 25V, VGS = 0V f = 1.0MHz VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω 5. Short duration pulse test used to minimize self-heating effect. CTA2P1N Document number: DS30296 Rev. 10 - 4 2 of 7 www.diodes.com October 2021 © Diodes Incorporated MMBT4403 Section 1.6 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 CAPACITANCE (pF) 10 5 1 -0.1 -1.0 -10 REVERSE VOLTAGE (V) Fig. 1 Typical Capacitance IC = 10mA IC = 1mA IC = 100mA I = 300mA C IC = 30mA 1.0 0.8 0.6 0.4 0.2 1 100 0.1 10 0.01 IB, BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1.2 0 0.001 IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = 50°C 0 1.4 -30 0.5 1 fT, GAIN BANDWIDTH PRODUCT (MHz) TA = 150°C TA = 25°C 10 CTA2P1N 0.7 TA = -50°C TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 1 10 IC, COLLECTOR CURRENT (mA) Fig. 4 Base-Emitter Voltage vs. Collector Current 100 100 TA = -50°C 1 1 0.8 1,000 VCE = 5V 100 VCE = 5V 0.9 0.2 0.1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Collector Emitter Saturation Voltage vs. Collector Current 1,000 hFE, DC CURRENT GAIN OBSOLETE – PART DISCONTINUED 20 10 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain vs. Collector Current Document number: DS30296 Rev. 10 - 4 3 of 7 www.diodes.com 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current October 2021 © Diodes Incorporated MMBT4403 Section (Continued) PD, POWER DISSIPATION (mW) OBSOLETE – PART DISCONTINUED 200 150 100 50 0 0 CTA2P1N 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Max Power Dissipation vs. Ambient Temperature (Total Device) Document number: DS30296 Rev. 10 - 4 200 4 of 7 www.diodes.com October 2021 © Diodes Incorporated 2N7002 Section ID, DRAIN-SOURCE CURRENT (A) 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.8 0.6 Tj = 25°C 6 5 VGS = 5.0V 5.5V 4 5.0V 3 0.4 VGS = 10V 2 0.2 1 0 0 0 5 4 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 On-Region Characteristics (2N7002) 1 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 9 On-Resistance vs. Drain Current (2N7002) 0 0.2 6 3.0 5 2.5 4 2.0 ID = 500mA ID = 50mA 3 2 1.5 1 VGS = 10V, ID = 200mA 1.0 -55 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (° C) Fig. 10 On-Resistance vs. Junction Temperature (2N7002) 10 -30 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002) 9 VGS, GATE SOURCE VOLTAGE (V) OBSOLETE – PART DISCONTINUED 1.0 8 7 6 5 4 3 2 1 0 0 CTA2P1N 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Fig. 12 Typical Transfer Characteristics (2N7002) Document number: DS30296 Rev. 10 - 4 5 of 7 www.diodes.com October 2021 © Diodes Incorporated Ordering Information 6. Device Packaging Shipping CTA2P1N-7-F SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A80 Date Code Key Year Code Month Code CTA2P1N 2004 R 2005 S YM OBSOLETE – PART DISCONTINUED Notes: (Note 6) 2006 T A80 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 O N D Document number: DS30296 Rev. 10 - 4 6 of 7 www.diodes.com October 2021 © Diodes Incorporated IMPORTANT NOTICE OBSOLETE – PART DISCONTINUED 1. 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