CTA2N1P-7

CTA2N1P PART OBSOLETE - CONTACT US COMPLEX TRANSISTOR ARRAY Features OBSOLETE – PART DISCONTINUED • • • • • A Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A03 Mechanical Data • • • • • • • • • B C H Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: A03, See Page 6 Ordering Information: See Page 6 Weight: 0.006 grams (approximate) Maximum Ratings, Total Device K M J D GQ2 CQ1 F L SQ2 SOT-363 Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 Nominal 0.30 0.40 1.80 2.20 0.10  0.90 1.00 0.25 0.40 0.10 0.25 8° α 0° All Dimensions in mm Dim A B C D F H J K L M Q1 Q2 EQ1 BQ1 DQ2 @TA = 25°C unless otherwise specified Symbol Value Power Dissipation Characteristic (Note 1) Pd 150 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 833 °C/W Tj, TSTG -55 to +150 °C Operating and Storage Temperature Range Maximum Ratings, Q1, MMBT4401 NPN Transistor Element Characteristic Unit @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 600 mA Collector Current - Continuous Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element Characteristic @TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR -50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current Continuous ID -130 mA Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. CTA2N1P Document number: DS30295 Rev. 8 - 4 1 of 7 www.diodes.com October 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 60  V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40  V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0  V IE = 100µA, IC = 0 ICEX  100 nA VCE = 35V, VEB(OFF) = 0.4V IBL  100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40    300   IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V Collector-Emitter Saturation Voltage VCE(SAT)  0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.75  0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Ccb  6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb  30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kΩ Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 40 500  Output Admittance hoe 1.0 30 µS fT 250  MHz Delay Time td  15 ns Rise Time tr  20 ns Storage Time ts  225 ns Fall Time tf  30 ns Collector Cutoff Current Base Cutoff Current Test Condition ON CHARACTERISTICS (Note 5) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element Characteristic OFF CHARACTERISTICS (Note 5) VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -50   V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS       -15 -60 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C Gate-Body Leakage IGSS   ±10 nA VGS = ±20V, VDS = 0V VGS(th) -0.8  -2.0 V VDS = VGS, ID = -1mA RDS (ON)   10 Ω VGS = -5V, ID = 0.100A gFS .05   S VDS = -25V, ID = 0.1A Input Capacitance Ciss   45 pF Output Capacitance Coss   25 pF Reverse Transfer Capacitance Crss   12 pF Turn-On Delay Time tD(ON)  10  ns Turn-Off Delay Time tD(OFF)  18  ns ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V Notes: 5. Short duration pulse test used to minimize self-heating effect. CTA2N1P Document number: DS30295 Rev. 8 - 4 2 of 7 www.diodes.com October 2021 © Diodes Incorporated MMBT4401 Section 1,000 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 150 100 50 TA = 125°C 100 TA = +25°C TA = -25°C 10 VCE = 1.0V 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature (Total Device) 1 200 V CE, COLLECTOR-EMITTER VOLTAGE (V) 20 Cibo 10 5.0 Cobo 1.0 CTA2N1P 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 0.1 2.0 30 CAPACITANCE (pF) OBSOLETE – PART DISCONTINUED 200 0.1 1.0 10 REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance Document number: DS30295 Rev. 8 - 4 50 3 of 7 www.diodes.com 1.8 IC = 1mA 1.6 IC = 30mA IC = 10mA IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1 10 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 0.001 0.01 100 October 2021 © Diodes Incorporated MMBT4401 Section 1.0 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = -50°C 1 VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC = 10 IB 0 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 0.9 VCE = 5V TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) OBSOLETE – PART DISCONTINUED 0.5 100 10 1 CTA2N1P 100 10 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1 Document number: DS30295 Rev. 8 - 4 4 of 7 www.diodes.com October 2021 © Diodes Incorporated BSS84 Section -1.0 500 -0.8 ID, DRAIN CURRENT (A) ID, DRAIN-TO-SOURCE CURRENT (mA) 400 300 200 100 0 0 4 1 2 3 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Fig. 8 Drain-Source Current vs. Drain-Source Voltage -0.6 -0.4 -0.2 -0.0 5 0 10 -2 -3 -4 -5 -6 -7 -8 15 VGS = -10V ID = -0.13A 9 8 7 6 5 4 3 2 12 9 6 3 TA = 125° C 1 0 -1 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 9 Drain Current vs. Gate Source Voltage RDS(ON), ON-RESISTANCE (Ω) OBSOLETE – PART DISCONTINUED 600 TA = 25° C 0 1 2 3 5 4 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 10 On-Resistance vs. Gate-Source Voltage 0 -50 75 100 125 150 -25 25 0 50 TJ, JUNCTION TEMPERATURE (°C) Fig. 11 On-Resistance vs. Junction Temperature 25.0 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 VGS = -5V VGS = -4V 10.0 5.0 VGS = -6V VGS = -8V VGS = -10V 0.0 -0.0 CTA2N1P -0.2 -0.4 -0.6 -0.8 ID, DRAIN CURRENT (A) Fig. 12, On-Resistance vs. Drain Current Document number: DS30295 Rev. 8 - 4 1.0 5 of 7 www.diodes.com October 2021 © Diodes Incorporated Ordering Information (Note 6) Packaging SOT-363 Device CTA2N1P-7-F 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A03 Date Code Key Year Code Month Code CTA2N1P A03 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September YM OBSOLETE – PART DISCONTINUED Notes: Shipping 3000/Tape & Reel 2001 M 2002 N 2003 P 2004 R 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 O N D Document number: DS30295 Rev. 8 - 4 6 of 7 www.diodes.com October 2021 © Diodes Incorporated IMPORTANT NOTICE OBSOLETE – PART DISCONTINUED 1. 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