DMG3415UFY4-7

NOT RECOMMENDED FOR NEW DESIGN USE DMP2045UFY4 DMG3415UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 39mΩ @ VGS = -4.5V -2.5A 52mΩ @ VGS = -2.5V -2.1A 65mΩ @ VGS = -1.8V -1.8A BVDSS -16V Features and Benefits          Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMG3415UFY4Q) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Mechanical Data  Case: X2-DFN2015-3  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Backlighting  Power Management Functions   Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters  Terminals: Finish  NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Terminals Connections: See Diagram Below  Weight: 0.008 grams (Approximate) D S D G G ESD PROTECTED TO 3kV Top View Gate Protection Diode Internal Schematic (Top View) Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMG3415UFY4-7 Notes: Case X2-DFN2015-3 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain