DMN2501UFB4-7

DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS ADVANCE INFORMATION 20V Features and Benefits RDS(on) max ID TA = +25°C 0.4Ω @ VGS = 4.5V 1.5A 0.5 Ω @ VGS = 2.5V 1.3A 0.7 Ω @ VGS = 1.8V 1.1A   Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V Max.         Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-Low Package Profile, 0.4mm Maximum Package Height ESD Protected Gate Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance,   making it ideal for high efficiency power management applications.      DC-DC Converters Power Management Functions  Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Drain X2-DFN1006-3 Body Diode S Gate D G ESD PROTECTED Bottom View Top View Internal Schematic Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN2501UFB4-7 DMN2501UFB4-7B Notes: Case X2-DFN1006-3 X2-DFN1006-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain