DMN4027SSS-13

DISCONTINUED A Product Line of Diodes Incorporated DMN4027SSS ADVANCE INFORMATION 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 40V Features and Benefits RDS(on)  ID TA = 25C 27m @ VGS= 10V 8.0A 47m @ VGS= 4.5V 6.1A Low on-resistance  Fast switching speed  “Green” component and RoHS compliant (Note 1)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications  Case: SO-8 This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1)  Moisture Sensitivity: Level 1 per J-STD-020  Terminals Connections: See diagram below  Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208  Weight: 0.074 grams (approximate)  Motor control  Backlighting  DC-DC Converters  Power management functions D SO-8 G S Top View Ordering Information Product DMN4027SSS-13 Note: Top View Equivalent Circuit (Note 1) Marking N4027SS Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information N4027SS YY WW DMN4027SSS Document Number DS32103 Rev 2 - 3 = Manufacturer’s Marking N4027SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-53) 1 of 8 www.diodes.com May 2013 © Diodes Incorporated DISCONTINUED A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN4027SSS Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) (Note 4) TA = 70°C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5) Symbol VDSS VGS ID IDM IS ISM Value 40 20 8.0 6.5 6.0 37 4.2 37 Unit V V Value 1.56 12.5 2.8 22.5 80 44.5 35 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: Symbol (Note 3) (Note 4) (Note 3) (Note 4) (Note 6) PD RJA RJL TJ, TSTG W mW/C C/W C 2. AEC-Q101 VGS maximum is 16V. 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t  10 sec. 5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN4027SSS Document Number DS32103 Rev 2 - 3 2 of 8 www.diodes.com May 2013 © Diodes Incorporated DISCONTINUED A Product Line of Diodes Incorporated 10 1.6 RDS(on) Limited Max Power Dissipation (W) ID Drain Current (A) Thermal Characteristics 1 DC 1s 100m 100ms 10m 10ms Single Pulse T amb=25°C 1m 100m 1ms 100µs 1 10 VDS Drain-Source Voltage (V) 1.4 25mm x 25mm 1oz FR4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 Safe Operating Area 80 70 T amb=25°C 60 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 Pulse Width (s) 10 Document Number DS32103 Rev 2 - 3 60 80 100 120 140 160 Temperature (°C) 100 1k Single Pulse T amb=25°C 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance DMN4027SSS 40 Derating Curve Maximum Power (W) Thermal Resistance (°C/W) ADVANCE INFORMATION DMN4027SSS Pulse Power Dissipation 3 of 8 www.diodes.com May 2013 © Diodes Incorporated DISCONTINUED A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN4027SSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40       0.5 100 V A nA ID = 250A, VGS= 0V VDS= 40V, VGS= 0V VGS= 20V, VDS= 0V VGS(th) 1.0 RDS (ON)  gfs VSD trr Qrr     3.0 0.027 0.047  1.1   V Static Drain-Source On-Resistance (Note 7)  0.017 0.031 22.8 0.85 12.2 5.4 S V ns nC ID= 250A, VDS= VGS VGS= 10V, ID= 7A VGS= 4.5V, ID= 6A VDS= 15V, ID= 7A IS= 7A, VGS= 0V Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf            604 106 59.6 6.3 12.9 2.4 3 3.1 3.1 15.4 7.5            pF pF pF nC nC nC nC ns ns ns ns Forward Transconductance (Notes 7 & 8) Diode Forward Voltage (Note 7) Reverse recovery time (Note 8) Reverse recovery charge (Note 8) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9) Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Notes: Ω Test Condition IS= 2.5, di/dt= 100A/s VDS= 20V, VGS= 0V f= 1MHz VGS= 4.5V VGS= 10V VDS= 20V ID= 7A VDD= 20V, VGS= 10V ID= 1A, RG  6.0 7. Measured under pulsed conditions. Pulse width  300s; duty cycle  2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. DMN4027SSS Document Number DS32103 Rev 2 - 3 4 of 8 www.diodes.com May 2013 © Diodes Incorporated DISCONTINUED A Product Line of Diodes Incorporated Typical Characteristics T = 25°C 4.5V 10 3.5V 3V 1 VGS 0.1 2.5V 0.01 0.1 1 T = 150°C 10V 4V 10 ID Drain Current (A) ID Drain Current (A) 10V 3.5V 3V 1 2.5V 0.1 0.01 10 VDS Drain-Source Voltage (V) 2V VGS 0.1 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C 0.1 T = 25°C 0.01 1E-3 1 2 3 VGS Gate-Source Voltage (V) Typical Transfer Characteristics 10 T = 25°C VGS 3V 3.5V 1 0.1 4V 4.5V 10V 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMN4027SSS Document Number DS32103 Rev 2 - 3 VGS = 10V 1.4 ID = 12A RDS(on) 1.2 1.0 0.8 0.4 -50 VGS(th) VGS = VDS 0.6 ID = 250uA 0 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature ISD Reverse Drain Current (A) ID Drain Current (A) 1 Normalised RDS(on) and VGS(th) 1.6 VDS = 10V RDS(on) Drain-Source On-Resistance () ADVANCE INFORMATION DMN4027SSS 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com 1.0 May 2013 © Diodes Incorporated DISCONTINUED A Product Line of Diodes Incorporated DMN4027SSS f = 1MHz 600 CISS COSS 400 CRSS 200 0 0.1 1 10 VGS Gate-Source Voltage (V) 10 VGS = 0V 800 C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics - continued 8 6 4 0 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VDS = 20V 2 ID = 7A 0 2 4 6 8 10 12 14 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN4027SSS Document Number DS32103 Rev 2 - 3 Switching time test circuit 6 of 8 www.diodes.com May 2013 © Diodes Incorporated DISCONTINUED A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN4027SSS Package Outline Dimensions  DIM Inches Millimeters DIM Inches Min. Millimeters Min. Max. Min. Max. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches DMN4027SSS Document Number DS32103 Rev 2 - 3 7 of 8 www.diodes.com May 2013 © Diodes Incorporated DISCONTINUED A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN4027SSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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