DMP2100UCB9-7

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA Features and Benefits = +25°C) NEW PRODUCT   LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 80mΩ to Minimize On-State Losses Qg = 3.3nC for Ultra-Fast Switching Vgs(th) = -0.7V typ. for a Low Turn-On Potential performance, making it ideal for high-efficiency power management applications.       CSP with Footprint 1.5mm × 1.5mm Height = 0.62mm for Low Profile ESD = 3kV HBM Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data       VDSS RDS(on) Qg Qgd ID -20V 80mΩ 3.3nC 0.6nC -4A Description This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet maintain superior switching Battery Management Load Switch Battery Protection ESD PROTECTED TO 3kV Case: U-WLB1515-9 Terminal Connections: See Diagram Below Weight: 0.0018 grams (Approximate) G1 D1 D1 SS D2 D1 G2 D2 D2 Top View Ordering Information (Note 4) Part Number DMP2100UCB9-7 Notes: Case U-WLB1515-9 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain