ZX5T869ZTA

ZX5T869Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 25m at 6.5A SOT89 • 5.5 amps continuous current • Up to 20 amps peak current • Very low saturation voltages • Excellent hFE characteristics up to 20 amps APPLICATIONS • Emergency lighting circuits • Motor driving (including DC fans) • Solenoid, relay and actuator drivers • DC modules • Backlight Inverters PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL 7" 12mm embossed 1000 units ZX5T869ZTA DEVICE MARKING TOP VIEW • 869 ISSUE 2 - JUNE 2005 1 SEMICONDUCTORS ZX5T869Z ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) LIMIT UNIT BV CBO 60 V BV CEO 25 V BV EBO 7 V 5.5 A IC Peak pulse current I CM 20 A Power dissipation at T A =25°C (a) Linear derating factor PD 1.5 W 12 mW/°C (b) PD Power dissipation at T A =25°C Linear derating factor Operating and storage temperature range T j , T stg 2.1 W 16.8 mW/°C -55 to +150 °C LIMIT UNIT THERMAL RESISTANCE PARAMETER SYMBOL (a) R ␪JA 83 °C/W Junction to ambient (b) R ␪JA 60 °C/W Junction to ambient NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 2 - JUNE 2005 SEMICONDUCTORS 2 ZX5T869Z CHARACTERISTICS ISSUE 2 - JUNE 2005 3 SEMICONDUCTORS ZX5T869Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO 60 120 MAX. UNIT CONDITIONS V I C = 100␮A Collector-emitter breakdown voltage BV CER 60 120 V I C = 1␮A, RB ⱕ 1k⍀ Collector-emitter breakdown voltage BV CEO 25 35 V I C = 10mA* Emitter base breakdown voltage BV EBO 7.0 8.1 V I E = 100␮A Collector cut-off current I CBO 20 nA VCB = 50V 0.5 ␮A I CER 20 nA VCB = 50V, Tamb=100⬚C V CB = 50V Rⱕ1k⍀ 0.5 ␮A VCB = 50V, Tamb=100⬚C Emitter cut-off current I EBO 10 nA V EB = 6V Collector-emitter saturation voltage V CE(SAT) 25 35 mV I C = 500mA, I B = 10mA* 30 45 mV 45 70 mV I C = 1A, I B = 100mA* I C = 1A, I B = 10mA* 105 130 mV Collector cut-off current I C = 2A, I B = 10mA* I C = 6.5A, I B = 150mA* 160 200 mV Base-emitter saturation voltage V BE(SAT) 950 1050 mV I C = 6.5A, I B = 150mA* Base-emitter turn on voltage V BE(ON) 860 960 mV Static forward current transfer ratio h FE I C = 6.5A, V CE = 1V* I C = 10mA, V CE = 1V* 300 400 300 450 I C = 1A, V CE = 1V* 275 I C = 7A, V CE = 1V* I C = 20A, V CE = 1V* 200 40 Transition frequency 55 150 fT I C = 100mA, V CE = 10V f=50MHz Output capacitance C OBO 48 pF V CB = 10V, f= 1MHz* Switching times t ON 33 ns t OFF 464 I C = 1A, V CC = 10V, I B1 = -I B2 = 100mA * Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%. ISSUE 2 - JUNE 2005 SEMICONDUCTORS 4 ZX5T869Z TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 5 SEMICONDUCTORS ZX5T869Z PACKAGE OUTLINE PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167 b1 - 0.53 - 0.021 E1 - 2.60 - 0.102 b2 1.50 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118 c 0.28 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112 D 4.40 4.60 0.173 0.181 - - - - - © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JUNE 2005 SEMICONDUCTORS 6