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DS100KR401SQE/NOPB

DS100KR401SQE/NOPB

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    WQFN54_EP

  • 描述:

    IC REDRIVER 8CH 10.3GBPS 54WQFN

  • 数据手册
  • 价格&库存
DS100KR401SQE/NOPB 数据手册
DS100KR401 www.ti.com SNLS395B – JANUARY 2012 – REVISED MARCH 2012 DS100KR401 Ultra Low Power, 4 Lane (8-channel, bi-directional) Repeater for Data-rates up to 10.3 Gbps Check for Samples: DS100KR401 FEATURES DESCRIPTION • The DS100KR401 is an extremely low power, high performance repeater designed to support 4 lane (bidirectional) 10G-KR and other high speed interface serial protocols up to 10.3 Gbps. The receiver's continuous time linear equalizer (CTLE) provides a boost of up to +36 dB at 5 GHz (10.3125 Gbps) in each of its eight channels and is capable of opening an input eye that is completely closed due to inter symbol interference (ISI) induced by interconnect medium such as long backplanes or cables, hence enabling host controllers to ensure an error free endto-end link. The transmitter provides a de-emphasis boost of up to -12 dB and output voltage amplitude control from 700 mV to 1300 mV to allow maximum flexibility in the physical placement within the interconnect channel. 1 2 • • • • • • • • • Comprehensive Product Family: – DS100KR800: 8-channel, Uni-directional Repeater – DS100KR401: 4x Lane, Bi-directional Repeater – DS100BR210: 2-channel, Uni-directional Repeater – DS100BR111: 1x Lane, Bi-directional Repeater 4 Lane (8-channel, Bi-directional) Repeater for 4x 10G-KR and Other Serial Standards up to 10.3 Gbps Transparent Management of 10G-KR (802.3ap) Link Training Protocol Low 65 mW/channel (Typ) Power Consumption, with Option to Power Down Unused Channels Advanced Signal Conditioning Features – Receive Equalization up to 36 dB at 5 GHz – Transmit De-emphasis up to -12 dB – Transmit Output Voltage Control: 700 mV to 1300 mV Programmable via Pin Selection, EEPROM or SMBus Interface Single Supply Operation Selectable: 2.5V or 3.3V –40°C to +85°C Operating Temperature Range 3 kV HBM ESD Rating Flow-thru Pinout in 10mm×5.5mm 54-pin Leadless WQFN Package When operating in 10G-KR mode, the DS100KR401 transparently allows the host controller and the end point to optimize the full link and negotiate transmit equalizer coefficients as defined in the 802.3ap standard. This seamless management of the link training protocol ensures guaranteed system level interoperability with minimum latency. With a low power consumption of 65 mW/channel (typ) and option to turn-off unused channels, the DS100KR401 enables energy efficient system design. A single supply of 3.3v or 2.5v is required to power the device. The programmable settings can be applied via pin settings, SMBus (I2C) protocol or an external EEPROM. When operating in the EEPROM mode, the configuration information is automatically loaded on power up. This eliminates the need for an external microprocessor or software driver. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated DS100KR401 SNLS395B – JANUARY 2012 – REVISED MARCH 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. TYPICAL APPLICATION 10 Gbps KR ASIC DS100KR401 10 Gbps KR ASIC DS100KR401 Server Card Application Card ck Ba ne Pla BLOCK DIAGRAM - DETAIL VIEW OF CHANNEL (1 of 8) VOD/ DeEMPHASIS CONTROL VDD DEMA/B SMBus EQ INx_n+ OUTBUF INx_n- OUTx_n+ OUTx_n- EQA/B SMBus Equalizer CONTROL 2 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: DS100KR401 DS100KR401 www.ti.com SNLS395B – JANUARY 2012 – REVISED MARCH 2012 DEMA1/SCL DEMA0/SDA ENSMB EQB1/AD2 EQB0/AD3 49 48 47 46 VDD 50 RESET 51 DEMB0/AD1 53 52 DEMB1/AD0 54 PIN DIAGRAM SMBUS AND CONTROL OUT_B_0+ 1 45 IN_B_0+ OUT_B_0- 2 44 IN_B_0- OUT_B_1+ 3 43 IN_B_1+ OUT_B_1- 4 42 IN_B_1- OUT_B_2+ 5 41 VDD OUT_B_2- 6 40 IN_B_2+ OUT_B_3+ 7 39 IN_B_2- OUT_B_3- 8 38 IN_B_3+ 37 IN_B_3- DAP = GND VDD 9 IN_A_0+ 10 36 VDD IN_A_0- 11 35 OUT_A_0+ IN_A_1+ 12 34 OUT_A_0- IN_A_1- 13 33 OUT_A_1+ VDD 14 32 OUT_A_1- IN_A_2+ 15 31 OUT_A_2+ IN_A_2- 16 30 OUT_A_2- IN_A_3+ 17 29 OUT_A_3+ IN_A_3- 18 28 OUT_A_3- 20 21 22 23 24 25 26 27 EQA0 MODE INPUT_EN LPBK VIN VDD_SEL SD_THA / READ_EN ALL_DONE EQA1 19 Vreg Figure 1. DS100KR401 Pin Diagram 54 lead Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: DS100KR401 3 DS100KR401 SNLS395B – JANUARY 2012 – REVISED MARCH 2012 www.ti.com PIN DESCRIPTIONS (1) Pin Name Pin Number I/O, Type Pin Description Differential High Speed I/O's OUT_B_0+, OUT_B_0, OUT_B_1+, OUT_B_1, OUT_B_2+, OUT_B_2, OUT_B_3+, OUT_B_3- 1, 2, 3, 4, 5, 6, 7, 8 O Inverting and non-inverting 50Ω driver bank B outputs with de-emphasis. Compatible with AC coupled CML inputs. IN_A_0+, IN_A_1+, IN_A_2+, IN_A_3+, IN_A_0-, IN_A_1-, IN_A_2-, IN_A_3- 10, 12, 15, 17, 11, 13, 16, 18 I Inverting and non-inverting differential inputs to bank A equalizer. A gated onchip 50Ω termination resistor connects INA_n+ to VDD and INA_n- to VDD when enabled. IN_B_0+, IN_B_1+, IN_B_2+, IN_B_3+, IN_B_0-, IN_B_1-, IN_B_2-, IN_B_3- 45, 43, 40, 38, 44, 42, 39, 37 I Inverting and non-inverting differential inputs to bank B equalizer. A gated onchip 50Ω termination resistor connects INB_n+ to VDD and INB_n- to VDD when enabled. 35, 33, 31, 29, 34, 32, 30, 28 O Inverting and non-inverting 50Ω driver bank A outputs with de-emphasis. Compatible with AC coupled CML inputs. I, LVCMOS System Management Bus (SMBus) enable pin Tie 1kΩ to VDD = Register Access SMBus Slave mode FLOAT = Read External EEPROM (Master SMBUS Mode) Tie 1kΩ to GND = Pin Mode OUT_A_0+, OUT_A_0, OUT_A_1+, OUT_A_1, OUT_A_2+, OUT_A_2, OUT_A_3+, OUT_A_3- Control Pins — Shared (LVCMOS) ENSMB 48 ENSMB = 1 (SMBUS MODE) SCL 50 I, LVCMOS, O, OPEN Drain ENSMB Master or Slave mode SMBUS clock input pin is enabled. Clock output when loading EEPROM configuration (master mode). SDA 49 I, LVCMOS, O, OPEN Drain ENSMB Master or Slave mode The SMBus bi-directional SDA pin is enabled. Data input or open drain (pulldown only) output. AD0-AD3 54, 53, 47, 46 I, LVCMOS ENSMB Master or Slave mode SMBus Slave Address Inputs. In SMBus mode, these pins are the user set SMBus slave address inputs. READ_EN 26 I, 4-LEVEL, LVCMOS When using an External EEPROM, a transition from high to low starts the load from the external EEPROM ENSMB = 0 (PIN MODE) EQA0, EQA1, EQB0, EQB1 20, 19, 46, 47 I, 4-LEVEL, LVCMOS EQA[1:0] and EQB[1:0] control the level of equalization on the input pins. The pins are active only when ENSMB is deasserted (low). The 8 channels are organized into two banks. Bank A is controlled with the EQA[1:0] pins and bank B is controlled with the EQB[1:0] pins. When ENSMB is high the SMBus registers provide independent control of each channel. The EQB[1:0] pins are converted to SMBUS AD2/ AD3 inputs. See Table 2 DEMA0, DEMA1, DEMB0, DEMB1 49, 50, 53, 54 I, 4-LEVEL, LVCMOS DEMA[1:0] and DEMB[1:0] control the level of de-emphasis of the output driver when in Gen1/2 mode. The pins are only active when ENSMB is deasserted (low). The 8 channels are organized into two banks. Bank A is controlled with the DEMA [1:0] pins and bank B is controlled with the DEMB[1:0] pins. When ENSMB is high the SMBus registers provide independent control of each channel. The DEMA[1:0] pins are converted to SMBUS SCL/SDA and DEMB[1:0] pins are converted to AD0, AD1 inputs. See Table 3 (1) 4 Notes: LVCMOS inputs without the “Float” conditions must be driven to a logic low or high at all times or operation is not guaranteed. Input edge rate for LVCMOS/FLOAT inputs must be faster than 50 ns from 10–90%. For 3.3V mode operation, VIN pin = 3.3V and the "VDD" for the 4-level input is 3.3V. For 2.5V mode operation, VDD pin = 2.5V and the "VDD" for the 4-level input is 2.5V. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: DS100KR401 DS100KR401 www.ti.com SNLS395B – JANUARY 2012 – REVISED MARCH 2012 PIN DESCRIPTIONS(1) (continued) Pin Name Pin Number I/O, Type Pin Description MODE 21 I, 4-LEVEL, LVCMOS Tie 1kΩ to VDD = 10G-KR Mode Operation Tie 1kΩ to GND = 10G Mode Operation SD_TH 26 I, 4-LEVEL, LVCMOS Controls the internal Signal Detect Threshold See Table 4 Control Pins — Both Pin and SMBus Modes (LVCMOS) INPUT_EN 22 I, 4-LEVEL, LVCMOS Tie 1kΩ to VDD = Normal Operation LPBK 23 I, 4-LEVEL, LVCMOS Controls the loopback function Tie 1kΩ to GND = INA_n to OUTB_n loopback Float = Normal Operation (loopback is disabled) Tie 1kΩ to VDD = INB_n to OUTA_n loopback VDD_SEL 25 I, FLOAT Controls the internal regulator Float = 2.5V mode Tie GND = 3.3V mode RESET 52 I, LVCMOS LOW = Device is enabled (Normal Operation) HIGH = Low Power Mode 27 O, LVCMOS Valid Register Load Status Output HIGH = External EEPROM load failed LOW = External EEPROM load passed VIN 24 Power In 3.3V mode, feed 3.3V to VIN In 2.5V mode, leave floating. VDD 9, 14, 36, 41, 51 Power Power supply pins CML/analog 2.5V mode, connect to 2.5V 3.3V mode, connect 0.1 uF cap to each VDD pin GND DAP Power Ground pad (DAP - die attach pad). Outputs ALL_DONE Power ABSOLUTE MAXIMUM RATINGS (1) (2) Supply Voltage (VDD = 2.5V mode) -0.5V to +2.75V Supply Voltage (VIN = 3.3V mode) -0.5V to +4.0V LVCMOS Input/Output Voltage -0.5V to +4.0V CML Input Voltage -0.5V to (VDD+0.5) CML Input Current -30 to +30 mA Junction Temperature 125°C Storage Temperature -40°C to +125°C Lead Temperature Range Soldering (4 sec.) +260°C Derate NJY0054A Package ESD Rating 52.6mW/°C above +25°C HBM, STD - JESD22-A114F 5 kV MM, STD - JESD22-A115-A 150 V CDM, STD - JESD22-C101-D Thermal Resistance 1000 V θJC 11.5°C/W θJA, No Airflow, 4 layer JEDEC 19.1°C/W For soldering specifications: see product folder at www.ti.com , and SNOA549 (1) (2) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute Maximum Numbers are specified for a junction temperature range of -40°C to +125°C. Models are validated to Maximum Operating Voltages only. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: DS100KR401 5 DS100KR401 SNLS395B – JANUARY 2012 – REVISED MARCH 2012 www.ti.com RECOMMENDED OPERATING CONDITIONS Min Typ Max Units Supply Voltage (2.5V mode) 2.375 2.5 2.625 V Supply Voltage (3.3V mode) 3.0 3.3 3.6 V Ambient Temperature -40 25 +85 °C 3.6 V 100 mVp-p SMBus (SDA, SCL) Supply Noise up to 50 MHz (1) (1) Allowed supply noise (mVp-p sine wave) under typical conditions. ELECTRICAL CHARACTERISTICS (1) Symbol Typ (2) Max Units VDD = 2.5 V supply, EQ Enabled, VOD = 1.0 Vp-p, INPUT_EN = 1, RESET = 0 500 700 mW VIN = 3.3 V supply, EQ Enabled, VOD = 1.0 Vp-p, INPUT_EN = 1, RESET = 0 660 900 mW 2.0 3.6 V 0 0.8 V Parameter Conditions Power Dissipation Min Power PD LVCMOS / LVTTL DC Specifications Vih High Level Input Voltage Vil Low Level Input Voltage Voh High Level Output Voltage (ALL_DONE pin) Ioh = −4mA Vol Low Level Output Voltage (ALL_DONE pin) Iol = 4mA Iih Input High Current (RESET pin) VIN = 3.6 V, LVCMOS = 3.6 V Input High Current with internal resistors (4–level input pin) Iil Input Low Current (RESET pin) 3.3V Mode Operation (VIN = 3.3V) 2.0 VIN = 3.6 V, LVCMOS = 0 V Input Low Current with internal resistors (4–level input pin) V 0.4 V -15 +15 uA +20 +150 uA -15 +15 uA -160 -40 uA CML Receiver Inputs (IN_n+, IN_n-) RLrx-diff RX package pins plus Si differential return loss 0.05 GHz - 7.5 GHz -15 dB 7.5 GHz - 15 GHz -5 dB RLrx-cm Common mode RX return loss 0.05 GHz - 5 GHz Zrx-dc RX DC common mode impedance Tested at VDD = 0 40 50 60 Ω Zrx-diff-dc RX DC differntial mode impedance Tested at VDD = 0 80 100 120 Ω Vrx-diff-dc Differential RX peak to peak voltage 0.6 1.2 V Vrx-signal-detdiff-pp Signal detect assert level for active SD_TH = F (float), 0101 pattern at 10.3 Gbps data signal 180 mVp-p Vrx-idle-detdiff-pp Signal detect de-assert level for electrical idle 110 mVp-p -10 Tested at pins SD_TH = F (float), 0101 pattern at 10.3 Gbps dB High Speed Outputs Vtx-diff-pp Output Voltage Differential Swing Differential measurement with Out_n+ and OUT_n-, terminated by 50Ω to GND, AC-Coupled, VID = 1.0 Vp-p, DEM0 = 1, DEM1 = 0 0.8 1.0 1.2 Vp-p Vtx-de-ratio_3.5 TXde-emphasis ratio VOD = 1.0 Vp-p, DEM0 = 0, DEM1 = R −3.5 Vtx-de-ratio_6 TX de-emphasis ratio VOD = 1.0 Vp-p, DEM0 = R, DEM1= R −6 TTX-HF-DJ-DD TX Dj > 1.5 MHz 0.15 UI TTX-HF-DJ-DD TX RMS jitter < 1.5 MHz 3.0 ps RMS (1) (2) 6 dB dB The Electrical Characteristics tables list specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are NOT guaranteed. Typical values represent most likely parametric norms at VDD = 2.5V, TA = 25°C., and at the Recommended Operation Conditions at the time of product characterization and are NOT guaranteed. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: DS100KR401 DS100KR401 www.ti.com SNLS395B – JANUARY 2012 – REVISED MARCH 2012 ELECTRICAL CHARACTERISTICS(1) (continued) Symbol Parameter Conditions Min Typ (2) TTX-RISE-FALL Transmitter rise/fall time 20% to 80% of differential output voltage 35 45 TRF-MISMATCH Transmitter rise/fall mismatch 20% to 80% of differential output voltage 0.01 RLTX-DIFF Differential return loss 0.05 GHz - 7.5 GHz -15 dB 7.5 GHz - 15 GHz -5 dB RLTX-CM Common mode return loss 0.05 GHz - 5 GHz -10 dB ZTX-DIFF-DC DC differential TX impedance 100 Ω VTX-CM-AC-PP TX AC common mode voltage VOD = 1.0 Vp-p, DEM0 = 1, DEM1 = 0 ITX-SHORT Transmitter short circuit current limit Total current the transmitter can supply when shorted to VDD or GND TPDEQ Differential propagation delay EQ = 00, TLSK TPPSK Max Units ps 0.1 100 UI mVpp 20 mA (3) 200 ps Lane to lane skew T = 25C, VDD = 2.5V 25 ps Part to part propagation delay skew T = 25C, VDD = 2.5V 40 ps DJE1 Residual deterministic jitter at 10.3 Gbps 35” 4 mil FR4, VID = 0.8 Vp-p, PRBS15, EQ = 1F'h, DEM = 0 dB 0.3 UI DJE2 Residual deterministic jitter at 10.3 Gbps 10 meters 30 awg cable, VID = 0.8 Vp-p, PRBS15, EQ = 2F'h, DEM = 0 dB 0.3 UI Residual deterministic jitter at 10.3 Gbps 20” 4mils FR4, VID = 0.8 Vp-p, PRBS15, EQ = 00, VOD = 1.0 Vp-p, DEM = −9 dB 0.1 UI Equalization De-emphasis DJD1 (3) Propagation Delay measurements will change slightly based on the level of EQ selected. EQ = 00 will result in the shortest propagation delays. ELECTRICAL CHARACTERISTICS — SERIAL MANAGEMENT BUS INTERFACE Over recommended operating supply and temperature ranges unless other specified. Symbol Parameter Conditions Min Typ Max Units 0.8 V 3.6 V SERIAL BUS INTERFACE DC SPECIFICATIONS VIL Data, Clock Input Low Voltage VIH Data, Clock Input High Voltage IPULLUP Current Through Pull-Up Resistor or Current Source VDD Nominal Bus Voltage ILEAK-Bus Input Leakage Per Bus Segment ILEAK-Pin Input Leakage Per Device Pin CI Capacitance for SDA and SCL RTERM External Termination Resistance pull to VDD = 2.5V ± 5% OR 3.3V ± 10% 2.1 High Power Specification 4 mA 2.375 See (1) -200 3.6 V +200 µA -15 See (1) (2) µA 10 Pullup VDD = 3.3V, See (1) (2) (3) Pullup VDD = 2.5V, See (1) (2) (3) pF 2000 Ω 1000 Ω SERIAL BUS INTERFACE TIMING SPECIFICATIONS FSMB Bus Operating Frequency TBUF Bus Free Time Between Stop and Start Condition THD:STA Hold time after (Repeated) Start Condition. After this period, the first clock is generated. ENSMB = VDD (Slave Mode) ENSMB = FLOAT (Master Mode) TSU:STA (1) (2) (3) 280 400 400 kHz 520 kHz 1.3 µs 0.6 µs 0.6 µs At IPULLUP, Max Repeated Start Condition Setup Time Recommended value. Recommended maximum capacitance load per bus segment is 400pF. Maximum termination voltage should be identical to the device supply voltage. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: DS100KR401 7 DS100KR401 SNLS395B – JANUARY 2012 – REVISED MARCH 2012 www.ti.com ELECTRICAL CHARACTERISTICS — SERIAL MANAGEMENT BUS INTERFACE (continued) Over recommended operating supply and temperature ranges unless other specified. Symbol Parameter Conditions Min Typ Max Units TSU:STO Stop Condition Setup Time 0.6 µs THD:DAT Data Hold Time 0 ns TSU:DAT Data Setup Time 100 ns TLOW Clock Low Period 1.3 µs THIGH Clock High Period See tF Clock/Data Fall Time See tR Clock/Data Rise Time See (4) See (4) (5) tPOR (4) (5) Time in which a device must be operational after power-on reset (4) 0.6 (4) 50 µs 300 ns 300 ns 500 ms Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1 SMBus common AC specifications for details. Specified by Design. Parameter not tested in production. TIMING DIAGRAMS (OUT+) 80% 80% VOD (p-p) = (OUT+) ± (OUT-) 0V 20% 20% (OUT-) tRISE tFALL Figure 2. CML Output and Rise and FALL Transition Time + IN 0V tPHLD tPLHD + OUT 0V - Figure 3. Propagation Delay Timing Diagram tLOW tR tHIGH SCL tHD:STA tBUF tHD:DAT tF tSU:STA tSU:DAT tSU:STO SDA SP ST ST SP Figure 4. SMBus Timing Parameters 8 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: DS100KR401 DS100KR401 www.ti.com SNLS395B – JANUARY 2012 – REVISED MARCH 2012 FUNCTIONAL DESCRIPTIONS The DS100KR401 is a low power media compensation 4 lane repeater optimized for 10G–KR. The DS100KR401 compensates for lossy FR-4 printed circuit board backplanes and balanced cables. The DS100KR401 operates in 3 modes: Pin Control Mode (ENSMB = 0), SMBus Slave Mode (ENSMB = 1) and SMBus Master Mode (ENSMB = float) to load register informations from external EEPROM; please refer to SMBUS Master Mode for additional information. Pin Control Mode: When in pin mode (ENSMB = 0) , the repeater is configurable with external pins. Equalization and de-emphasis can be selected via pin for each side independently. When de-emphasis is asserted VOD is automatically adjusted per the De-Emphasis table below. The receiver electrical idle detect threshold is also adjustable via the SD_TH pin. SMBUS Mode: When in SMBus mode (ENSMB = 1), the VOD (output amplitude), equalization, de-emphasis, and termination disable features are all programmable on a individual lane basis, instead of grouped by A or B as in the pin mode case. Upon assertion of ENSMB the MODE, EQx and DEMx functions revert to register control immediately. The EQx and DEMx pins are converted to AD0-AD3 SMBus address inputs. The other external control pins remain active unless their respective registers are written to and the appropriate override bit is set, in which case they are ignored until ENSMB is driven low (pin mode). On power-up and when ENSMB is driven low all registers are reset to their default state. If RESET is asserted while ENSMB is high, the registers retain their current state. Equalization settings accessible via the pin controls were chosen to meet the needs of most applications. If additional fine tuning or adjustment is needed, additional equalization settings can be accessed via the SMBus registers. Each input has a total of 256 possible equalization settings. The tables show the 16 setting when the device is in pin mode. When using SMBus mode, the equalization, VOD and de-Emphasis levels are set by registers. The input control pins have been enhanced to have 4 different levels and provide a wider range of control settings when ENSMB=0. Table 1. 4–Level Control Pin Settings (1) Pin Setting Description Voltage at Pin 0 Tie 1kΩ to GND 0.03 x VDD R Tie 20kΩ to GND 1/3 x VDD Float Float (leave pin open) 2/3 x VDD 1 Tie 1kΩ to VDD 0.98 x VDD (1) The above required resistor value is for a single device. When there are multiple devices connected to the pull-up / pull-down resistor, the value must scale with the number of devices. If 4 devices are connected to a single pull-up or pull-down, the 1kΩ resistor value should be 250Ω. For the 20kΩ to GND, this should also scale to 5kΩ. 3.3V or 2.5V Supply Mode Operation The DS100KR401 has an optional internal voltage regulator to provide the 2.5V supply to the device. In 3.3V mode, the VIN pin = 3.3V is used to supply power to the device and the VDD pins should be left open. The internal regulator will provide the 2.5V to the VDD pins of the device and a 0.1 µF cap is needed at each of 5 VDD pins for power supply de-coupling (total capacitance should be ≤0.5 µF). The VDD_SEL pin must be tied to GND to enable the internal regulator. In 2.5V mode, the VIN pin should be left open and 2.5V supply must be applied to the VDD pins. The VDD_SEL pin must be left open (no connect) to disable the internal regulator. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: DS100KR401 9 DS100KR401 SNLS395B – JANUARY 2012 – REVISED MARCH 2012 www.ti.com 3.3V mode 2.5V mode VDD_SEL Enable VDD_SEL open VIN open Disable 3.3V Capacitors can be either tantalum or an ultra-low ESR seramic. Internal voltage regulator 2.5V VDD 0.1 uF 0.1 uF VDD VDD 0.1 uF 0.1 uF VDD 1 uF VDD 10 uF 2.5V 1 uF VIN 10 uF Internal voltage regulator Capacitors can be either tantalum or an ultra-low ESR seramic. VDD 0.1 uF 0.1 uF VDD VDD 0.1 uF 0.1 uF VDD VDD 0.1 uF 0.1 uF Place 0.1 uF close to VDD Pin Total capacitance should be 7 0.5 uF Place capcitors close to VDD Pin Figure 5. 3.3V or 2.5V Supply Connection Diagram Table 2. Equalizer Settings Level EQA1 EQB1 1 2 10 EQA0 EQB0 EQ – 8 bits [7:0] dB at 1.0 GHz dB at 3.0 GHz dB at 5.0 GHz 0 0 0000 0000 = 0x00 1.7 4.2 5.3 FR4 < 5 inch trace 0 R 0000 0001 = 0x01 2.8 6.6 8.7 FR4 5 inch 5–mil trace 3 0 Float 0000 0010 = 0x02 4.1 8.6 10.6 FR4 5 inch 4–mil trace 4 0 1 0000 0011 = 0x03 5.1 9.8 11.7 FR4 10 inch 5–mil trace 5 R 0 0000 0111 = 0x07 6.2 12.4 15.6 FR4 10 inch 4–mil trace 6 R R 0001 0101 = 0x15 5.1 12.0 16.6 FR4 15 inch 4–mil trace 7 R Float 0000 1011 = 0x0B 7.7 15.0 18.3 FR4 20 inch 4–mil trace 8 R 1 0000 1111 = 0x0F 8.8 16.5 19.7 FR4 25 to 30 inch 4–mil trace 9 Float 0 0101 0101 = 0x55 6.3 14.8 20.3 FR4 30 inch 4–mil trace 10 Float R 0001 1111 = 0x1F 9.9 19.2 23.6 FR4 35 inch 4–mil trace 11 Float Float 0010 1111 = 0x2F 11.3 21.7 25.8 10m, 30awg cable 12 Float 1 0011 1111 = 0x3F 12.4 23.2 27.0 10m – 12m cable 13 1 0 1010 1010 = 0xAA 11.9 24.1 29.1 14 1 R 0111 1111 = 0x7F 13.6 26.0 30.7 15 1 Float 1011 1111 = 0xBF 15.1 28.3 32.7 16 1 1 1111 1111 = 0xFF 16.1 29.7 33.8 Submit Documentation Feedback Suggested Use Copyright © 2012, Texas Instruments Incorporated Product Folder Links: DS100KR401 DS100KR401 www.ti.com SNLS395B – JANUARY 2012 – REVISED MARCH 2012 Table 3. De-emphasis and Output Voltage Settings Level DEMA1 DEMB1 DEMA0 DEMB0 VOD Vp-p DEM dB Inner Amplitude Vp-p Suggested Use 1 0 0 0.8 0 0.8 FR4
DS100KR401SQE/NOPB 价格&库存

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DS100KR401SQE/NOPB
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  • 250+131.02191250+15.89336
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