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TPS54201DDCR

TPS54201DDCR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOT23-6

  • 描述:

    DC-DC电源芯片 SOT23-6 Vi=4.5~28V Io=1.5A

  • 数据手册
  • 价格&库存
TPS54201DDCR 数据手册
Order Now Product Folder Support & Community Tools & Software Technical Documents TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 TPS54200、 、TPS54201 4.5V 至 28V 输入电压、1.5A 输出电流、 同步降压单色或 IR LED 驱动器 1 特性 • • 1 • • • • • • • • • • • 3 说明 宽输入电压范围:4.5V 至 28V 集成 150mΩ 和 70mΩ MOSFET,持续输出电流为 1.5A 关断电流低至 2μA 600kHz 固定频率 具有内部补偿的峰值电流模式 在模拟和 PWM 调光模式下,感应电压分别为 200mV 和 100mV PWM 输入的精确模拟调光 (ADIM) LED 开路和短路保护 传感电阻器开路和短路保护 关断和锁存模式保护 (TPS54200) 自动重试模式保护 (TPS54201) 热关断 6 引脚 SOT-23 薄型封装 TPS54200 和 TPS54201 器件为 1.5A 同步降压单色 或 IR最大输入电压为 28V 的驱动器。电流模式操作可 提供快速瞬态响应,并且方便实现环路稳定。 TPS54200 和 TPS54201 可用于驱动单串或多串、单 色或红外 (IR) LED 阵列,比如在夜视摄像机中。 通过集成 MOSFET 并采用 SOT-23 薄型封 装,TPS54200 和 TPS54201 器件实现了高功率密 度,并且仅需在 PCB 上占用较小的空间。 在模拟调光模式下,TPS54200 和 TPS54201 器件通 过改变与 PWM 信号输入占空比成比例的内部基准电 压来实现模拟调光。此外,该器件还支持 PWM 调光 模式。该模式下的内部基准电压将被减半至 100mV, 从而可实现更高效率。 器件信息(1) 2 应用 • • 器件型号 可调节昼/夜视的 IR LED – IP 网络摄像机 – 模拟安防摄像机 – 可视门铃 – 嵌入式摄像机系统 LED 显示和照明 – 冰箱和冷冻柜 – 电子智能锁 – 通用 LED 驱动器 – 建筑照明 TPS54201 SOT-23 薄型 (6) ADIM 中的深度调光性能出色 2 SW 6 PWM 5 CO PWM Input RF VIN 3 CIN VIN FB 4 CF RSENSE Copyright © 2016, Texas Instruments Incorporated ILED/ILED_Full (at 100% PWM duty cycle) CBOOT BOOT 1.6mm x 2.9mm (1) 要了解所有可用封装,请见产品说明书末尾的可订购产品附 录。 LO GND 封装尺寸(标称值) TPS54200 简化电路原理图 1 封装 SOT-23 薄型 (6)中 将封装说明从 1.6mm x 2.9mm SOT23 更改为 SOT23 薄型 6% 5.5% 5% 4.5% 4% 3.5% Unit 1 Unit 2 Unit 3 Unit 4 Unit 5 Unit 6 Unit 7 Unit 8 3% 2.5% 2% 1.5% 1% 1% 1.5% 2% 2.5% 3% 3.5% PWM duty cycle 4% 4.5% 5% D001 1 本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确 性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。 English Data Sheet: SLUSCO8 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 目录 1 2 3 4 5 6 7 8 特性 .......................................................................... 应用 .......................................................................... 说明 .......................................................................... 修订历史记录 ........................................................... 说明 (续) .............................................................. Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 4 4 5 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 5 5 5 5 6 7 7 8 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Timing Requirements ................................................ Switching Characteristics .......................................... Typical Characteristics .............................................. Detailed Description ............................................ 11 8.1 Overview ................................................................. 11 8.2 Functional Block Diagram ....................................... 12 8.3 Feature Description................................................. 13 8.4 Device Functional Modes........................................ 17 9 Application and Implementation ........................ 20 9.1 Application Information............................................ 20 9.2 Typical Application ................................................. 20 10 Power Supply Recommendations ..................... 30 11 Layout................................................................... 30 11.1 Layout Guidelines ................................................. 30 11.2 Layout Example .................................................... 31 12 器件和文档支持 ..................................................... 32 12.1 12.2 12.3 12.4 12.5 12.6 12.7 器件支持................................................................ 文档支持 ............................................................... 接收文档更新通知 ................................................. 社区资源................................................................ 商标 ....................................................................... 静电放电警告......................................................... 术语表 ................................................................... 32 32 32 32 32 32 32 13 机械、封装和可订购信息 ....................................... 33 4 修订历史记录 Changes from Revision A (March 2017) to Revision B Page • 已在“特性”部分和整个产品说明书内将“断续模式”更改为“自动重试模式” ................................................................................ 1 • 已更改封装 说明...................................................................................................................................................................... 1 • 已更改 “应用”部分 ................................................................................................................................................................... 1 • 已在“说明”部分的第一句中将“WLED”更改为“单色或 IR LED”................................................................................................. 1 • 已在器件信息表....................................................................................................................................................................... 1 • Changed pinout diagram and associated text ........................................................................................................................ 4 • Changed "PWM duty input" to "PWM input duty cycle" in the Pin Functions table................................................................ 4 • Changed "free-air" to "ambient" in the Absolute Maximum Ratings condition statement ...................................................... 5 • Changed "free-air" to "ambient" in the Recommended Operating Conditions condition statement ....................................... 5 • Changed the package description in the Thermal Information table header.......................................................................... 5 • Changed "Rising" and "Falling" to "Rising VPWM" and "Falling VPWM" for the VADIM, VPDIM, and VPWM Electrical Characteristics table entries ................................................................................................................................................... 6 • Changed "SW" to "VSW" in the Test Conditions column for the RHSD entry in the Electrical Characteristics table................. 6 • Changed "dim mode" to "dimming mode" in the Test Conditions column for the ILIM_HS1 entry in the Electrical Characteristics table ............................................................................................................................................................... 6 • Changed the symbol for switching frequency from FSW to fSW .............................................................................................. 7 • Changed VIN to VVIN in the Typical Characteristics condition statement ................................................................................ 8 • Changed "hiccup up mode" to "auto-retry mode" ................................................................................................................ 11 • Changed "duty" to "duty cycle" in multiple locations throughout the data sheet .................................................................. 13 • Changed "PWM duty" to "PWM duty cycle" in the 图 16 image........................................................................................... 13 • Changed "floating driver" to "boot regulator" in the Bootstrap Voltage (BOOT) section ..................................................... 14 • Changed VIN to VVIN in multiple locations throughout the data sheet................................................................................... 14 • Changed various wording in the 已添加器件支持和文档支持 部分 section for clarity, and changed "512 switching cycles " to "tSHUTDOWN_DELAY" ....... 14 • Changed "hiccup up" to "auto-retry mode" in the Fault Protection section .......................................................................... 15 • Changed "hiccup" to "auto-retry" or "shuddown -and-restart," and deleted "programmed for XXX switching cycles" text.. 15 2 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 修订历史记录 (接 接下页) • Changed "will be clamped by low" to "is clamped at the low-"............................................................................................. 15 • Changed "hiccup" to "auto-retry" or "shuddown -and-restart," and deleted "programmed for XXX switching cycles" text.. 15 • Changed "hiccup" to "auto-retry" or "shuddown -and-restart," and deleted "programmed for XXX switching cycles" text.. 15 • Changed "hiccup" to "auto-retry" or "shuddown -and-restart," and deleted "programmed for XXX switching cycles" text.. 15 • Changed "Recycle VIN can reset" to "Cycling VIN resets".................................................................................................... 16 • Changed "once the device shuts down, it starts" to "a device shutdown starts".................................................................. 16 • Changed "hiccup" to "auto-retry" or "shuddown -and-restart," and deleted "programmed for XXX switching cycles" text.. 16 • Changed "hiccup" to "auto-retry" or "shuddown -and-restart," and deleted "programmed for XXX switching cycles" text.. 16 • Changed "Vin at" to "VVIN" .................................................................................................................................................... 17 • Changed "VADIM" to "VADIM" and "VPDIM" to "VPDIM" .......................................................................................................... 17 • Changed "it's" to "the output is"............................................................................................................................................ 17 • Changed "VIN" to "VIN" and "recycled" to "cycled" at the end of the Mode Detection ......................................................... 17 • Changed "a little big" to "excessive" in the Analog Dimming Mode Operation section........................................................ 18 • Changed "PWM duty cycle" to "PWM state" ........................................................................................................................ 19 • Changed "12-VIN" to "12-V VVIN"........................................................................................................................................... 20 • Changed "FSW" to "fSW" and "VIN(max)" to "VVIN(max)" in 公式 3 from F to f .............................................................................. 21 • Changed "FSW" to "fSW" and "VIN(ripple)" to "VVIN(ripple)" in 公式 8 from F to f ........................................................................... 21 • Changed the symbol for frequency in 公式 11 from F to f.................................................................................................... 22 • Changed "RF" to "RF" and "CF" to "CF"................................................................................................................................ 22 • Changed "VOUT" to "VOUT" in the conditions of multiple application curves........................................................................ 24 • Changed the wording of the second and third paragraphs of the Inductor Selection section for clarity.............................. 27 • Changed the symbol for frequency in 公式 14 from F to f.................................................................................................... 27 • Changed "wide areas advantages" to "added width also".................................................................................................... 30 • Changed "reduce the possibility" to "minimize" .................................................................................................................... 30 • 已添加器件支持和文档支持 部分 .......................................................................................................................................... 32 Changes from Original (November 2016) to Revision A Page • 已添加 TPS54201 器件的初始发行版。.................................................................................................................................. 1 • 已将 说明 更改为包含保护模式。 ........................................................................................................................................... 4 • Changed ILIM_HS1 and ILIM_HS2 CURRENT LIMIT. .................................................................................................................... 6 • Changed the low-side source-current limit from (2.4/3.4/4.4) to (2.3/3.3/4.4), ...................................................................... 6 • Added TPS54201 tHIC_THERMAL, tHIC_OV and tHIC_WAIT Timing Requirements. ........................................................................... 7 • 已添加 TPS54201 LED Short Protection image. .................................................................................................................. 25 • 已添加 TPS54201 LED Open Protection image. ................................................................................................................. 25 • 已添加 TPS54201 Sense Resistor Short Protection image. ................................................................................................ 25 版权 © 2016–2018, Texas Instruments Incorporated 3 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 5 说明 (续) 高侧 MOSFET 内的逐周期电流限制可在过载情况下保护转换器,并通过低侧 MOSFET 续流电流限制防止电流 失控,增强限制效果。提供低侧 MOSFET 灌电流限制,可防止反向电流过大。在安全和保护方面,TPS54200 和 TPS54201 器件具备 LED 开路和短路保护、感应电阻器开路和短路保护以及器件热保护功能。TPS54200 器件使用关断和锁存模式保护,而 TPS54201 器件则采用自动重试模式保护。 6 Pin Configuration and Functions DDC Package 6-Pin SOT-23-THIN Top View GND 1 6 BOOT SW 2 5 PWM VIN 3 4 FB Not to scale Pin Functions PIN NAME NO. BOOT 6 FB GND TYPE (1) DESCRIPTION O A bootstrap capacitor is required between BOOT and SW. 4 I LED current-detection feedback 1 G Power ground PWM 5 I Dimming input. Default low (internally pulled low). In analog dimming mode, the internal reference is proportional to the PWM input duty cycle. In PWM dimming mode, LED current is ON during the PWM high period in each PWM cycle. SW 2 O Switching node to the external inductor VIN 3 P Input supply voltage (1) 4 I = Input, O = Output, P = Supply, G = Ground Copyright © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 7 Specifications 7.1 Absolute Maximum Ratings over operating ambient temperature range (unless otherwise noted) (1) MIN MAX VIN –0.3 30 PWM –0.3 7 FB –0.3 7 BOOT–SW –0.3 7 SW –0.3 30 –5 30 Operating junction temperature, TJ –40 150 °C Storage temperature range, Tstg –65 150 °C Input voltage range, VI Output voltage range, VO SW (20 ns transient) (1) UNIT V V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) UNIT ±4000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) V ±1500 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating ambient temperature range (unless otherwise noted) MIN MAX 4.5 28 PWM –0.1 6 FB –0.1 6 BOOT-SW VIN VI Input voltage range VO Output voltage range –0.1 6.5 SW –0.1 28 TJ Operating junction temperature –40 125 UNIT V V °C 7.4 Thermal Information TPS5420x THERMAL METRIC (1) DDC (SOT-23-THIN) UNIT 6 PINS RθJA Junction-to-ambient thermal resistance 89.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 39.5 °C/W RθJB Junction-to-board thermal resistance 14.7 °C/W ψJT Junction-to-top characterization parameter 1.2 °C/W ψJB Junction-to-board characterization parameter 14.7 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Copyright © 2016–2018, Texas Instruments Incorporated 5 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 7.5 Electrical Characteristics The electrical ratings specified in this section apply to all specifications in this document, unless otherwise noted. These specifications are interpreted as conditions that do not degrade the device parametric or functional specifications for the life of the product containing it. TJ = –40°C to 125°C, VVIN = 4.5 V to 28 V, (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT SUPPLY VVIN Input voltage range IOFF Shutdown current VVIN_UVLO VIN undervoltage lockout 4.5 PWM = GND 28 V µA 2 8.6 Rising VVIN 3.83 4.2 4.47 Falling VVIN 3.4 3.7 3.95 Hysteresis 470 V mV DIMMING (PWM PIN) VADIM Analog dimming-mode threshold VPDIM PWM dimming-mode threshold VPWM Threshold to identify PWM duty cycle VPWM_SHUTDOWN Shutdown threshold Rising VPWM 1.97 Falling VPWM 2.07 2.17 1.8 Rising VPWM 0.9 Falling VPWM 1 1.1 0.8 Rising VPWM 0.91 1 1.12 Falling VPWM 0.5 0.63 0.72 0.35 0.55 V V V V FEEDBACK AND ERROR AMPLIFIER VFB1 Feedback voltage in analog dimming mode PWM = 3.3 V, SW duty cycle > 90% 201 205 210 mV VFB2 Feedback voltage in PWM dimming mode PWM = 1.5 V, SW duty cycle > 90% 96 100 104 mV Rising 2.1 2.33 Falling 2 2.2 150 259 mΩ 70 120 mΩ 2.4 3 3.6 A 1 1.4 1.8 A BOOT PIN VBOOT_UVLO BOOT-SW UVLO threshold V POWER STAGE RHSD High-side FET on-resistance VBOOT – VSW= 6 V RLSD Low-side FET on-resistance VVIN > 6 V ILIM_HS1 High-side current limit 1 Either one of the following conditions: 1. PWM dimming mode 2. Analog dimming mode and PWM duty cycle >25% ILIM_HS2 High-side current limit 2 Analog dimming mode and PWM duty cycle 6 V 2.3 3.3 4.4 A ILIM_LS_SINK Low-side sink current limit VVIN > 6 V 1.25 1.7 2.2 A 150 160 170 °C CURRENT LIMIT FAULT PROTECTION Thermal shutdown (1) Rising temperature VOVP VOCP (1) 6 Hysteresis 10 °C Overvoltage protection 1 V Overcurrent protection 120% Not production tested Copyright © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 7.6 Timing Requirements MIN TYP MAX UNIT THERMAL SHUTDOWN tHIC_THERMAL TPS54200 and TPS54201 thermal shutdown auto-retry time 32 768 Cycles 32 768 Cycles OVERVOLTAGE PROTECTION tHIC_OV TPS54201 auto-retry time for overvoltage protection OVERCURRENT AND OPEN-LOOP PROTECTION tSHUTDOWN_DELAY TPS54200 shutdown delay time for open-loop and overcurrent protection 512 Cycles tHIC_WAIT TPS54201 auto-retry wait time for open-loop and overcurrent protection 512 Cycles tHIC_OC TPS54201 auto-retry time for open-loop and overcurrent protection 16 384 Cycles SOFT START tSS Internal soft-start time 0.6 ms 7.7 Switching Characteristics TJ = –40°C to 125°C, VVIN = 4.5 V to 28 V, (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 480 600 700 kHz 90 105 ns OSCILLATOR fsw Switching frequency ON-TIME CONTROL tMIN_ON Minimum on-time 版权 © 2016–2018, Texas Instruments Incorporated Measured at 90% to 90% and 1-A loading 7 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 7.8 Typical Characteristics VVIN = 12 V, unless otherwise specified 240 220 2.5 +LJK VLGH )(7 5GV RQ P Shutdown Quiescent Current (uA) 3 2 1.5 1 0.5 200 180 160 140 120 0 -50 -25 0 25 50 75 Junction Temperature (°C) 100 100 -50 125 图 1. Shutdown Quiescent Current vs Junction Temperature 100 125 D002 207 206.5 FB Voltage in ADIM (mV) 100 /RZ VLGH )(7 5GV RQ P 0 25 50 75 Junction Temperature (°C) 图 2. High-Side FET On-Resistance vs Junction Temperature 110 90 80 70 60 206 205.5 205 204.5 204 203.5 50 -50 -25 0 25 50 75 Junction Temperature (°C) 100 203 -50 125 -25 D003 图 3. Low-Side FET On-Resistance vs Junction Temperature 0 25 50 75 Junction Temperature (°C) 100 125 D004 图 4. FB Voltage in ADIM vs Junction Temperature 610 Switching Frequency (kHz) 101 FB Voltage in PDIM (mV) -25 D001 100.5 100 99.5 605 600 595 590 585 99 -50 -25 0 25 50 75 Junction Temperature (°C) 100 125 D005 图 5. FB Voltage in PDIM vs Junction Temperature 8 580 -50 -25 0 25 50 75 Junction Temperature (°C) 100 125 D006 图 6. Switching Frequency vs Junction Temperature 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 Typical Characteristics (接 接下页) VVIN = 12 V, unless otherwise specified 1.65 3.3 High Side Current Limit 2 (A) High Side Current Limit 1 (A) 3.25 3.2 3.15 3.1 3.05 3 1.6 1.55 1.5 1.45 2.95 2.9 -50 -25 0 25 50 75 Junction Temperature (°C) 100 1.4 -50 125 图 7. High-Side Source Current Limit 1 Threshold vs Junction Temperature Low Side Sink Current Limit (A) Low Side Source Current Limit (A) 3.4 3.3 3.2 3.1 -25 0 25 50 75 Junction Temperature (°C) 100 125 D008 1.8 1.75 1.7 1.65 1.6 -50 125 -25 D009 图 9. Low-Side Source Current Limit Threshold vs Junction Temperature 0 25 50 75 Junction Temperature (°C) 100 125 D010 图 10. Low-Side Sink Current Limit Threshold vs Junction Temperature 2.2 4.2 Rising Falling 2.15 4.1 VIN UVLO Threshold (V) BOOT UVLO Threshold (V) 100 1.85 3.5 2.1 2.05 2 1.95 1.9 -50 0 25 50 75 Junction Temperature (°C) 图 8. High-Side Source Current Limit 2 Threshold vs Junction Temperature 3.6 3 -50 -25 D007 4 Rising Falling 3.9 3.8 3.7 -25 0 25 50 75 Junction Temperature (°C) 100 125 D011 图 11. BOOT-SW UVLO Threshold vs Junction Temperature 版权 © 2016–2018, Texas Instruments Incorporated 3.6 -50 -25 0 25 50 75 Junction Temperature (°C) 100 125 D012 图 12. VIN UVLO Threshold vs Junction Temperature 9 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn Typical Characteristics (接 接下页) VVIN = 12 V, unless otherwise specified 1.1 PWM Dimming Mode Threshold (V) Analog Dimming Mode Threshold (V) 2.1 2.05 2 Rising Falling 1.95 1.9 1.85 1.8 -50 -25 0 25 50 75 Junction Temperature (°C) 100 125 1.05 1 0.95 Rising Falling 0.9 0.85 0.8 0.75 -50 -25 D013 图 13. Analog Dimming Mode Threshold vs Junction Temperature 0 25 50 75 Junction Temperature (°C) 100 125 D014 图 14. PWM Dimming Mode Threshold vs Junction Temperature PWM Shutdown Threshold (V) 0.65 0.6 0.55 0.5 0.45 0.4 0.35 0.3 -50 -25 0 25 50 75 Junction Temperature (°C) 100 125 D015 图 15. PWM Shutdown Threshold vs Junction Temperature 10 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 8 Detailed Description 8.1 Overview The TPS5420x device is a 1.5-A synchronous buck LED driver up to 28-V input. Current-mode operation provides fast transient response. The optimized internal compensation network minimizes the external component count and simplifies the control loop design. The TPS5420x device has a fixed 600-kHz switching frequency for a good tradeoff between efficiency and size. The integrated 150-mΩ high-side MOSFET and 70-mΩ low-side MOSFET allow for a high-efficiency LED driver with continuous output current up to 1.5 A. The TPS5420x device supports deep dimming in both analog and PWM dimming modes. In analog dimming mode, the internal reference voltage is changed in proportion to the duty cycle of the PWM signal in the 1% to 100% range. In the PWM dimming mode, the LED turns on and off periodically according to the PWM duty cycle. For higher efficiency, the internal reference is halved to 100 mV. Cycle-by-cycle current limit in the high-side MOSFET protects the converter in overload conditions and is enhanced by a low-side MOSFET freewheeling current limit which prevents current runaway. There is a low-side MOSFET sinking-current limit to prevent excessive reverse current. For safety and protection, the TPS5420x includes LED-open and -short protection, sense-resistor-open and short protection, and device thermal protection. The TPS54200 device implements shutdown-and-latch mode protection, whereas the TPS54201 device implements auto-retry mode protection. 版权 © 2016–2018, Texas Instruments Incorporated 11 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 8.2 Functional Block Diagram Enable PWM VIN 5 3 Peak Detector Delay PWM DIM Mode Selection Thermal Shutdown + VTH Enable Timer and Logic UVLO Shutdown Logic Boot Charge OVP Shutdown Open Loop Shutdown Mode VIN Bandgap SS OCP Shutdown Maximum Clamp VBGP BOOT 2 SW Boot UVLO PWM Dimming Control and Error Amp 6 HS MOSFET Current Comparator Mode Power Stage and Deadtime Control Logic Comp Slope Compensation Mode FB Oscillator 4 + OVP Shutdown + OCP Shutdown 1V VOCP PWM VIN Regulator Current Sense LS MOSFET Current Limit 1 GND Copyright © 2016, Texas Instruments Incorporated 12 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 8.3 Feature Description 8.3.1 Fixed-Frequency PWM Control The device uses a fixed-frequency and peak-current-mode control. The LED current is sensed by a resistor in series with the LED string. The sensed voltage is fed to the FB pin through an RC filter, and then compared to an internal voltage reference by an error amplifier. An internal oscillator initiates the turnon of the high-side power switch. The error amplifier output is compared to the current of the high-side power switch. When the powerswitch current reaches the error-amplifier output-voltage level, the high-side power switch is turned off and the low-side power switch is turned on. Thus, the error amplifier output voltage regulates inductor peak current, and in turn the LED current, to a target value. The device implements a current limit by clamping the error amplifier voltage to a maximum level and also implements a minimum clamp for improved transient-response performance. 8.3.2 Error Amplifier The device has a transconductance amplifier as the error amplifier. The error amplifier compares the FB voltage to the lower of the internal soft-start voltage or the internal voltage reference. The transconductance of the error amplifier is 240 μA/V typically. The frequency compensation components are placed internally between the output of the error amplifier and ground. 8.3.3 Slope Compensation and Output Current The device adds a compensating ramp to the signal of the switch current. This slope compensation prevents subharmonic oscillations as the duty cycle increases. The available peak inductor current remains constant over the full duty-cycle range. 8.3.4 Input Undervoltage Lockout The device implements internal undervoltage-lockout (UVLO) circuitry on the VIN pin. The device is disabled when the VIN pin voltage falls below the internal VIN UVLO threshold, which is 3.7 V typical. The internal VIN UVLO threshold has a hysteresis of 470 mV. 8.3.5 Voltage Reference The voltage reference system produces a precise ±2.5% voltage reference over temperature by scaling the output of a temperature-stable band-gap circuit when the PWM duty cycle is 100%. In PWM dimming mode, the voltage reference, VREF, is fixed at 100 mV. In analog dimming mode, VREF, is proportional to the duty cycle of PWM as shown in 图 16. VREF (mV) 200 100 PWM duty cycle (%) 图 16. VREF vs PWM Duty Cycle in Analog Dimming Mode 版权 © 2016–2018, Texas Instruments Incorporated 13 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn Feature Description (接 接下页) 8.3.6 Setting LED Current Once the voltage reference, VREF, is chosen, one can set the LED current by choosing the proper sensing resistor according to 公式 1: VREF RSENSE ILED (1) 8.3.7 Internal Soft Start The TPS5420x device uses an internal soft-start function. The internal soft-start time is set to 0.6 ms typically. 8.3.8 Bootstrap Voltage (BOOT) The TPS5420x has an integrated boot regulator and requires a 0.1-μF ceramic capacitor between the BOOT and SW pins to provide the gate drive voltage for the high-side MOSFET. A ceramic capacitor with an X7R or X5R grade dielectric is recommended because of the stable characteristics over temperature and voltage. This boot regulator has its own UVLO protection. This UVLO rising threshold is 2.1 V with a hysteresis of 100 mV. A 6-V bootstrap voltage is maintained between BOOT and SW when VVIN > 6 V. 8.3.9 Overcurrent Protection The device is protected from overcurrent conditions by cycle-by-cycle current limiting on both the high-side MOSFET and the low-side MOSFET. 8.3.9.1 High-Side MOSFET Overcurrent Protection The device implements current-mode control, which uses the internal COMP voltage to control the turnoff of the high-side MOSFET and the turnon of the low-side MOSFET on a cycle-by-cycle basis. During each cycle, the switch current and the current reference generated by the internal COMP voltage are compared. When the peak switch current intersects the current reference, the high-side switch turns off. During overcurrent conditions, such as when the sensing resistor is shorted, or an open circuit occurs in the feedback-filter RC network that drives FB low, the error amplifier responds by driving the COMP pin high, increasing the switch current. The error amplifier output is clamped internally. This clamp functions as a switch-current limit. This current limit is fixed at 3.1 A typical in PWM dimming mode. In analog dimming mode with the PWM duty cycle >25%, this limit is also 3.1 A. If the PWM duty cycle is below 25%, this limit is halved to 1.5 A typical. Furthermore, if an output overcurrent condition occurs for more than the shutdown delay time, tSHUTDOWN_DELAY, the device shuts down and latches off to protect the LED from overcurrent damage. 8.3.9.2 Low-Side MOSFET Overcurrent Protection While the low-side MOSFET is turned on, the conduction current is monitored by the internal circuitry. During normal operation, the low-side MOSFET sources current to the load. At the end of every clock cycle, the low-side MOSFET sourcing current is compared to the internally set low-side sourcing current-limit. If the low-side sourcing-current limit is exceeded, the high-side MOSFET does not turn on and the low-side MOSFET stays on for the next cycle. The high-side MOSFET turns on again when the low-side current is below the low-side sourcing current-limit at the start of a cycle. 8.3.9.3 Low-Side MOSFET Reverse Overcurrent Protection The TPS5420x device implements low-side reverse-current protection by detecting the voltage across the lowside MOSFET. When the converter sinks current through its low-side FET, the control circuit turns off the lowside MOSFET if the reverse current is more than 1.7 A typical. By implementing this additional protection scheme, the converter is able to protect itself from excessive sink current during fault conditions. 14 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 Feature Description (接 接下页) 8.3.10 Fault Protection The device is protected from several kinds of fault conditions, such as LED open and short, sense-resistor open and short, and thermal shutdown. The only difference between the TPS54200 and TPS54201 devices is the different protection mode used. The TPS54200 device implements shutdown-and-latch mode protection, whereas the TPS54201 device implements auto-retry mode protection. 8.3.10.1 LED-Open Protection When the LED load is open, the FB voltage is low, and the internal COMP voltage is driven high and clamped. This action triggers a shutdown delay counter (TPS54200) or auto-retry wait counter (TPS54201). For the TPS54200 device, once the shutdown delay time tSHUTDOWN_DELAY expires, the device shuts down and latches off. Both FETs are kept off. This is a latched shutdown. The device can be reset by recycling VIN. For TPS54201, once the auto-retry wait time tHIC_WAIT expires, the device shuts down and starts auto-retry timer tHIC_OC. During the shutdown period, both FETs are kept off. Once the auto-retry timer expires, the TPS54201 device restarts again. If the failure still exists, the TPS54201 device repeats the foregoing shutdown-and-restart process. 8.3.10.2 LED Short Protection When the LED load is shorted, the FB voltage is higher than VREF, and the internal COMP voltage is driven low and clamped, and the high-side MOSFET is commanded on for a minimum on-time each cycle. In this condition, if the output voltage is too low, the inductor current may not be able to balance in a cycle, causing current runaway. Finally, the inductor current is clamped at the low-side MOSFET sourcing-current limit, which is much higher than target LED current. If the FB voltage is higher than the OCP threshold, which is 250 mV typical in analog dimming mode, or 120 mV typical in PWM dimming mode, the shutdown delay counter (TPS54200) or auto-retry wait counter (TPS54201) is triggered. For the TPS54200 device, once the shutdown delay time tSHUTDOWN_DELAY expires, the device shuts down and latches off. Both FETs are kept off. This is a latched shutdown. The device can be reset by recycling VIN. For the TPS54201 device, once the auto-retry wait time tHIC_WAIT expires, the device shuts down and starts auto-retry timer tHIC_OC. During the shutdown period, both FETs are kept off. Once the auto-retry timer expires, the TPS54201 device restarts again. If the failure still exists, the TPS54201 device repeats the foregoing shutdown-and-restart process. 8.3.10.3 Sense-Resistor Short Protection When the sense resistor is shorted, the FB voltage is low, and the internal COMP voltage is driven high and clamped. This action triggers the shutdown delay counter (TPS54200) or auto-retry wait counter (TPS54201). For the TPS54200 device, once the shutdown delay time tSHUTDOWN_DELAY expires, the device shuts down and latches off. Both FETs are kept off. This is a latched shut-down. The device can be reset by recycling VIN. For the TPS54201 device, once the auto-retry wait time tHIC_WAIT expires, the device shuts down and starts auto-retry timer tHIC_OC. During the shutdown period, both FETs are kept off. Once the auto-retry timer expires, the TPS54201 device restarts again. If the failure still exists, the TPS54201 device repeats the foregoing shutdownand-restart process. 8.3.10.4 Sense-Resistor Open Protection When the sense resistor is open before the device powers on, the device charges the BOOT capacitor at the power-on moment. The charging current flows through the inductor, the output capacitor, and the RC filter at the FB pin to charge up the FB pin voltage. Once the device detects an FB voltage higher than the 1-V OVP threshold, the device shuts down immediately. For the TPS54200 device, this is a latched shutdown, and the device can be reset by cycling VIN. For the TPS54201 device, once the device shuts down, it starts the overvoltage auto-retry timer tHIC_OV. During the shutdown period, both FETs are kept off. Once the overvoltage auto-retry timer expires, the TPS54201 device restarts again. If the failure still exists, the TPS54201 device repeats the foregoing auto-retry shutdown-and-restart process. 版权 © 2016–2018, Texas Instruments Incorporated 15 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn Feature Description (接 接下页) 8.3.10.5 Overvoltage Protection When the FB pin, for some reason, has a voltage higher than 1 V applied, the device shuts down immediately. Both FETs are kept off. This is called overvoltage protection. For the TPS54200 device, this is a latched shutdown. Cycling VIN resets the device. For the TPS54201 device, a device shutdown starts the overvoltage auto-retry timer tHIC_OV. During the shutdown period, both FETs are kept off. Once the overvoltage auto-retry timer expires, the TPS54201 device restarts again. If the failure still exists, the TPS54201 device repeats the foregoing auto-retry shutdown-and-restart process. 8.3.10.6 Thermal Shutdown The internal thermal-shutdown circuitry forces the device to stop switching if the junction temperature exceeds a typical value of 160°C. When the junction temperature drops below a typical value of 150°C, the internal thermalauto-retry timer tHIC_THERMAL begins to count. The device reinitiates the power-up sequence once the thermalauto-retry timer expires. 16 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 8.4 Device Functional Modes 8.4.1 Enable and Disable Device The PWM pin performs not only the dimming function, but also the enable-and-disable function. When the VIN voltage is above the UVLO threshold, the TPS5420x device can be enabled by driving the PWM pin higher than the threshold voltage, 0.56 V typical. To disable the device, keep the PWM pin lower than the threshold voltage, 0.55 V typical, for 40 ms or longer. The PWM pin has an internal pulldown resistor, so floating this pin disables the device. The suggested power-on sequence is applying VVIN first, followed by the PWM signal. 8.4.2 Mode Detection The magnitude of the PWM signal is used to determine which dimming mode the device enters. The internal peak detector at the PWM pin holds the magnitude of the PWM signal. Once the device is enabled, after 300-µs delay, the output of the peak detector is compared with two voltage thresholds, VADIM and VPDIM, which are 1 V and 2.07 V, respectively. If the output of the peak detector is higher than 2.07 V, analog dimming mode is chosen and locked. If the output is between 1 V and 2.07 V, PWM dimming mode is chosen and locked. If the output is less than 1 V, the device waits another 300 µs and compares again, and this process repeats until at least one mode is chosen and locked. See 图 17 and 表 1 for reference. After the mode is detected and locked, soft start begins, the output voltage ramps up, and the LED current is regulated at the target value. The dimming mode cannot be changed unless VIN or PWM is cycled. section PWM + EN VTH PWM Peak Detector VADIM VPDIM VPWM + + A + B Internal PWM 图 17. Mode Detection Circuit 表 1. Mode Detection Condition A B MODE H H Enter analog dimming mode L H Enter PWM dimming mode L L Keep detecting until one dimming mode is locked 版权 © 2016–2018, Texas Instruments Incorporated 17 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 8.4.3 Analog Dimming Mode Operation Once the analog dimming mode is chosen, the internal voltage reference for the FB pin is approximately 200 mV at full scale, and proportional to the PWM duty cycle as shown in 图 16. LED current is continuous in this mode, and the current magnitude can be adjusted by changing PWM duty cycle, see 图 18. Because the internal voltage reference is filtered from the PWM signal, a too-low PWM frequency may cause excessive ripple at the voltage reference. To minimize this ripple, the suggested PWM signal frequency is 10 kHz or higher, such as 50 kHz. LED current 200 mV/RSENSE 100 mV/RSENSE 50 kHz/50% PWM t 3V t 图 18. Analog Dimming Operation A comparator with 400-mV hysteresis is used to generate the internal PWM signal, see 图 17. This internal PWM duty cycle determines the voltage reference. To make sure the PWM pin signal is correctly identified, the high level of the PWM signal should be higher than 1 V, and the low level should be lower than 0.6 V. 图 19 shows the relationship between the external PWM and internal PWM signals. 18 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 8.4.4 PWM Dimming-Mode Operation Once the PWM dimming mode is chosen, the internal voltage reference for the FB pin is fixed at 100 mV. The LED current is on or off corresponding to the PWM state, see 图 19. Due to the limited control-loop response, to get a relatively linear dimming performance, the suggested PWM signal frequency should be less than 1 kHz. 1V 0.6 V PWM Pin Signal Internal PWM 100 mV/RSENSE 0 LED Current 图 19. PWM Dimming Operation In some application where dimming is not needed, one can just connect a resistor divider from VVIN to the PWM pin as 图 20 shows. LO CBOOT 1 GND BOOT 6 2 SW PWM 5 3 VIN FB 4 CO RF VIN CIN RTOP CF RSENSE RBOT 图 20. Application Without Dimming RTOP and RBOT should be sized to make sure the PWM pin voltage is higher than 1 V when VVIN reaches its steady voltage. It is best to make sure the PWM pin voltage is less than 2 V, thus one can have 100 mV at the FB pin for better efficiency. Use 10 kΩ as a good starting point for RBOT, then choose RTOP according to 公式 2: § V · R TOP ¨ IN 1¸ u RBOT © VPWM ¹ (2) 版权 © 2016–2018, Texas Instruments Incorporated 19 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 9 Application and Implementation 注 Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The TPS5420x device is typically used as a buck converter to drive one or more LEDs from a 4.5-V to 28-V input. The TPS5420x device supports both analog dimming mode and PWM dimming mode. 9.2 Typical Application 3 2 9.2.1 TPS5420x 12-V Input, 1.5-A, 3-Piece IR LED Driver With Analog Dimming U1 VIN C2 10µF C3 0.1µF 3 VIN 5 PWM BOOT 6 SW 2 FB 4 0.1µF D1 SFH 4715A Infrared L1 R1 0 1 C1 10µH 3 2 VIN = 10.8V ~ 13.2V D2 SFH 4715A Infrared C4 10µF PWM GND TP1 1 3.3V, 50kHz, 1% to 100% duty 1 R2 TPS54200DDCR 910 GND 3 2 GND R3 0.033 D3 SFH 4715A Infrared C5 0.082µF 1 R4 0.1 GND Copyright © 2016, Texas Instruments Incorporated GND 图 21. 12-V VVIN, 1.5-A, 3-Piece IR LED, Analog Dimming Reference Design 9.2.1.1 Design Requirements For this design example, use the parameters in 表 2. 表 2. Design Parameters 20 PARAMETER VALUE Input voltage range 10.8 V to 13.2 V LED string forward voltage 5.4-V stack Output voltage 5.6 V LED current at 100% PWM duty cycle 1.5 A LED current ripple 30 mA or less Input voltage ripple 400 mV or less PWM dimming range 1% to 100%, 3.3 V, 50 kHz 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 9.2.1.2 Detailed Design Procedure 9.2.1.2.1 Inductor Selection Use 公式 3 to calculate the minimum value of the output inductor (LMIN). VOUT ´ (VVIN(max) - VOUT ) L MIN = VVIN(max) ´ KIND ´ ILED ´ fSW where • • • KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum LED current. ILED is the maximum LED current. VOUT is the sum of the voltage across LED load and the voltage across the sense resistor. (3) In general, the suggested value of KIND is between 0.2 and 0.4. For an application that can tolerate higher LED current ripple or use larger output capacitors, one can choose 0.4 for KIND. Otherwise, a smaller KIND like 0.2 can be chosen to get low-enough LED current ripple. With the chosen inductor value the user can calculate the actual inductor current ripple using 公式 4. VOUT ´ (VVIN(max) - VOUT ) IL(ripple) = VVIN(max) ´ L ´ fSW (4) The inductor rms-current and saturation-current ratings must be greater than the rms current and saturation current seen in the application. This ensures that the inductor does not overheat or saturate. During power up, transient conditions, or fault conditions, the inductor current can exceed its normal operating current. For this reason, the most conservative approach is to specify an inductor with a saturation current rating equal to or greater than the converter current limit. This is not always possible due to application size limitations. The peakinductor-current and rms-current equations are shown in 公式 5 and 公式 6. IL(ripple) IL(peak) ILED (5) 2 IL(rms) ILED2 IL(ripple)2 12 (6) In this design, choose KIND = 0.3. According to the LED manufacturer’s data sheet, the IR LED has 1.75-V forward voltage at 1.5-A current, so VOUT = 1.75 V × 3 + 0.2 V = 5.45 V and the calculated inductance is 11.9 µH. A 10-µH inductor (part number is 744066100 from Wurth) is chosen. With this inductor, the ripple, peak, and rms currents of the inductor are 0.53 A, 1.77 A, and 1.51 A, respectively. The chosen inductor has ample margin. 9.2.1.2.2 Input Capacitor Selection The device requires an input capacitor to reduce the surge current drawn from the input supply and the switching noise from the device. Ceramic capacitors with X5R or X7R dielectrics are highly recommended because of their low ESR and small temperature coefficients. For most applications, a 10-μF capacitor is enough. An additional 0.1-μF capacitor from VIN to GND is optional to provide additional high-frequency filtering. The input capacitor must have a voltage rating greater than the maximum input voltage and have a ripple-current rating greater than the maximum input-current ripple of the converter. The rms input-ripple current is calculated in 公式 7, where D is the duty cycle (output voltage divided by input voltage). ICIN(rms) ILED u D u 1 D (7) Use 公式 8 to calculate the input ripple voltage, where ESRCIN is the ESR of input capacitor. Ceramic capacitance tends to decrease as the applied dc voltage increases. This depreciation must be accounted for when calculating input ripple voltage. ILED ´ D ´ (1 - D) + ILED ´ ESR CIN VVIN(ripple) = CIN ´ fSW (8) In this design, a 10-µF, 35-V X7R ceramic capacitor, part number GRM32ER7YA106KA12L from muRata, is chosen. This yields around 70-mV input ripple voltage. The calculated rms input ripple current is 0.75 A, well below the ripple-current rating of the capacitor. 版权 © 2016–2018, Texas Instruments Incorporated 21 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 9.2.1.2.3 Output Capacitor Selection The output capacitor reduces the high-frequency ripple current through the LED string. Various guidelines disclose how much high-frequency ripple current is acceptable in the LED string. Excessive ripple current in the LED string increases the rms current in the LED string, and therefore the LED temperature increases. 1. Look up the total dynamic resistance of the LED string (RLED) using the LED manufacturer’s data sheet. 2. Calculate the required impedance of the output capacitor (ZOUT), given the acceptable peak-to-peak ripple current through the LED string, ILED(ripple). IL(ripple) is the peak-to-peak inductor ripple current as calculated previously in the Inductor Selection section. 3. Calculate the minimum effective output capacitance required. 4. Increase the output capacitance appropriately due to the derating effect of applied dc voltage. See 公式 9, 公式 10 and 公式 11. 'VF RLED u # of LEDs 'IF ZCOUT COUT = (9) RLED u ILED(ripple) IL(ripple) ILED(ripple) 1 2p ´ fSW ´ Z COUT (10) (11) Once the output capacitor is chosen, 公式 12 can be used to estimate the peak-to-peak ripple current through the LED string. ZCOUT u IL(ripple) ILED(ripple) ZCOUT RLED (12) An OSRAM IR LED, SFH4715A, is used here. The dynamic resistance of this LED is 0.25 Ω at 1.5-A forward current. In this design, a 10-µF, 35-V X7R ceramic capacitor is chosen, the part number is GRM32ER7YA106KA12L, from muRata. The calculated ripple current of the LED is about 20 mA. 9.2.1.2.4 FB Pin RC Filter Selection The RC filter comprising RF and CF and connected between the sense resistor and the FB pin is used to generate a pole for loop stability purposes. Moving this pole can adjust loop bandwidth. The suggested frequency of the pole is 2 kHz in analog dimming mode and 4 kHz in PWM dimming mode. Use 公式 13 to choose RF and CF. Due to the dc offset current of the internal amplifier, the suggested value of RF is less than 1 kΩ to minimize the effect on LED current-regulation accuracy. 1 CF 2S u RF u fPOLE (13) Analog dimming mode is implemented in this design. Choose the pole at around 2 kHz, with 910 Ω as the filter resistor; then the calculated filter capacitance is 87 nF. An 82 nF capacitor is chosen for this filter. 9.2.1.2.5 Sense Resistor Selection The maximum target LED current at 100% PWM duty is 1.5 A, and the corresponding VREF is 200 mV. Using 公 式 1, calculate the needed sense resistance at 133 mΩ. Pay close attention to the power consumption of the sense resistor in this design at 300 mW, and make sure the chosen resistor has enough margin in its power rating. 22 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 9.2.1.3 Application Curves 100% CH2 95% 90% Efficiency 85% CH3 80% 75% 70% 65% CH4 60% Efficiency_LED Efficiency_Vout 55% 50% 0 10 20 30 40 50 60 PWM duty % 70 80 90 100 D001 CH2: SW CH3: LED current (AC-coupled) CH4: Inductor current 图 22. Efficiency 图 23. LED Current Ripple at 1% PWM Duty Cycle CH2 CH1 CH3 CH2 CH4 CH4 CH2: SW CH3: LED current CH4: Inductor current (AC-coupled) CH1: VVIN CH2: SW CH4: Inductor current (AC-coupled) 图 24. LED Current Ripple at 100% PWM Duty Cycle 图 25. Input Voltage Ripple at 100% PWM Duty Cycle CH1 CH1 CH3 CH3 CH4 CH4 CH1: PWM CH3: Inductor current CH4: LED current 图 26. LED Current Transient as PWM Duty Cycle Changes From 1% to 99% 版权 © 2016–2018, Texas Instruments Incorporated CH1: PWM CH3: Inductor current CH4: LED current 图 27. LED Current Transient as PWM Duty Cycle Changes From 50% to 99% 23 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 1600 CH1 1400 1200 LED current (mA) CH3 CH4 1000 800 600 400 200 0 0 CH1: PWM CH3: Inductor current 20% 40% 60% PWM duty % 80% 100% D002 CH4: LED current 图 29. LED Current vs PWM Duty Cycle 图 28. LED Current Transient as PWM Duty Cycle Changes From 99% to 1% CH1 CH1 CH2 CH2 CH3 CH3 CH4 CH4 CH1: PWM CH2: SW CH3: VOUT CH4: LED current; 图 30. Start-Up at 1% PWM Duty Cycle and 50 kHz CH1: PWM CH2: SW CH3: VOUT CH4: LED current; 图 31. Shutdown at 1% PWM Duty Cycle and 50 kHz CH1 CH1 CH2 CH2 CH3 CH4 CH3 CH4 CH1: PWM CH2: SW CH3: VOUT CH4: LED current 图 32. Start-Up at 100% PWM Duty Cycle 24 CH1: PWM CH2: SW CH3: VOUT CH4: LED current 图 33. Shutdown at 100% PWM Duty Cycle 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 CH1 CH2 CH3 CH4 CH1: VOUT CH2: SW CH3: FB CH4: Inductor current 图 34. LED Short Protection (100% PWM Duty Cycle) of TPS54200 CH1: VOUT CH2: SW CH3: FB CH4: Inductor current 图 35. LED Short Protection (100% PWM Duty Cycle) of TPS54201 CH1 CH2 CH3 CH4 CH1: VOUT CH2: SW CH3: FB CH4: Inductor current 图 36. LED Open Protection (100% PWM Duty Cycle) of TPS54200 CH1: VOUT CH2: SW CH3: FB CH4: Inductor current 图 37. LED Open Protection (100% PWM Duty Cycle) of TPS54201 CH1 CH2 CH3 CH4 CH1: VOUT CH2: SW CH3: FB CH4:Inductor current 图 38. Sense Resistor Short Protection (100% PWM Duty Cycle) of TPS54200 版权 © 2016–2018, Texas Instruments Incorporated CH1: VOUT CH2: SW CH3: FB CH4: Inductor current 图 39. Sense-Resistor Short Protection (100% PWM Duty Cycle) of TPS54201 25 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 1 9.2.2 TPS5420x 24-V Input, 1-A, 4-Piece WLED Driver With PWM Dimming U1 C2 10µF C3 0.1µF VIN BOOT 6 0.1µF 5 PWM SW R1 2 3 C1 3 0 GND 10µH 1 VIN = 21.6V ~ 26.4V VIN D1 Cool White L1 2 D2 Cool White GND 4 GND TP1 1 1 PWM FB R2 TPS54200DDCR D3 Cool White 200 GND 2 3 GND 1.5V, 250Hz, 1% to 100% duty 2 3 C4 10µF C5 0.082µF GND 1 R3 0.1 D4 Cool White 2 3 GND GND GND Copyright © 2016, Texas Instruments Incorporated 图 40. 24-V Input, 1-A, 4-Piece WLED Driver With PWM Dimming Reference Design 9.2.2.1 Design Requirements For this design example, use the parameters in 表 3. 表 3. Design Parameters 26 PARAMETER VALUE Input voltage range 21.6 V to 26.4 V LED string forward voltage 11.6-V stack Output voltage 11.7 V LED current at 100% PWM duty cycle 1A LED current ripple 30 mA or less Input voltage ripple 400 mV or less PWM dimming range 1% to 100%, 1.5 V, 250 Hz 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 9.2.2.2 Detailed Design Procedure The detailed design process in this example is basically the same with that shown in the previous design example. Following are the design results. 9.2.2.2.1 Inductor Selection A Cree white LED XLampXML is used. According to the LED manufacturer’s data sheet, this LED has 2.9-V forward voltage at 1-A current, so VOUT = 2.9 V × 4 + 0.1 V = 11.7 V. Choose KIND = 0.3, which gives a 36-µH inductance. With this inductance, the ripple current on the inductor is only 0.3-A peak-to-peak, which is too conservative and increases total system cost and size. For this application, with concerns about system cost and size taken into account, decide the inductance by choosing a larger peak-to-peak inductor ripple current. To choose a proper peak-to-peak inductor ripple, the lowside FET sink current limit should not be exceeded when the converter works in a no-load condition. To meet this requirement, half of the peak-to-peak inductor ripple must be lower than that limit. Another consideration with this larger peak-to-peak ripple current is the increased core loss and copper loss in the inductor, which is also acceptable. Once this peak-to-peak inductor ripple current is chosen, 公式 14 can be used to calculate the required inductance. VOUT ´ (VIN(max) - VOUT ) L MIN = VIN(max) ´ IL(ripple) ´ fSW where • IL(RIPPLE) is the peak-to-peak inductor ripple current. (14) Choose 1-A peak-to-peak inductor ripple current, and half of the current is 0.5 A, much lower than the minimum low-side sink current limit of 1.25 A. The calculated inductance is 10.9 µH. Choose a 10-µH inductor with part number 744066100 from Wurth. The ripple, peak, and rms currents of the inductor are 1.09 A, 1.54 A, and 1.05 A, respectively. The chosen inductor has ample margin in this design. 9.2.2.2.2 Input Capacitor Selection In this design, a 10-µF, 35-V X7R ceramic capacitor, part number GRM32ER7YA106KA12L from muRata, is chosen. This yields around 70-mV input-ripple voltage. The calculated rms input ripple current is 0.5 A, well below the ripple-current rating of the capacitor. 9.2.2.2.3 Output Capacitor Selection The dynamic resistance of this LED is 0.184 Ω at 1-A forward current. In this design, choose a 10-µF, 35-V X7R ceramic capacitor, part number GRM32ER7YA106KA12L from muRata. The calculated ripple current of the LED is about 40 mA. 9.2.2.2.4 FB Pin RC Filter Selection PWM dimming mode is implemented in this design. Choose the pole at around 4 kHz, and choose 475 Ω as the filter resistor. With those values, an 82 nF capacitor should be chosen for this filter. To get a faster loop response, choose a smaller filter resistor. In this design, 200 Ω was chosen to get a pole at approximately 10 kHz. 9.2.2.2.5 Sense Resistor Selection The maximum target LED current at 100% PWM duty cycle is 1 A, and the corresponding VREF is 100 mV. By using 公式 1, one can calculate the needed sense resistance of 100 mΩ. Pay close attention to the power consumption of the sense resistor in this design at 100 mW. Make sure the chosen resistor has enough margin in the power rating. 版权 © 2016–2018, Texas Instruments Incorporated 27 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 9.2.2.3 Application Curves CH1 CH1 CH2 CH2 CH3 CH3 CH4 CH4 CH1: PWM CH2: SW CH3: VOUT CH4: LED current 图 41. Start-Up at 1% PWM Duty Cycle and 250 Hz CH1: PWM CH2: SW CH3: VOUT CH4: LED current 图 42. Shutdown at 1% PWM Duty Cycle and 250 Hz CH1 CH1 CH2 CH2 CH3 CH3 CH4 CH4 CH1: PWM CH2: SW CH3: VOUT CH4: LED Current CH1: PWM 图 43. Start-Up at 100% PWM Duty Cycle CH2: SW CH3: VOUT CH4: LED current 图 44. Shutdown at 100% PWM Duty Cycle CH1 CH1 CH4 CH4 CH1 PWM CH4: LED current 图 45. PWM Dimming With 2% Duty Cycle and 250 Hz 28 CH1: PWM CH4: LED current 图 46. PWM Dimming With 50% Duty Cycle and 250 Hz 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 CH2 CH1 CH3 CH4 CH4 CH1: PWM CH4: LED current CH2: SW 图 47. PWM Dimming With 99% Duty Cycle and 250 Hz CH3: LED current (AC-coupled) CH4: Inductor current 图 48. LED Current Ripple at 100% PWM Duty Cycle CH1 CH2 CH4 CH1: VVIN (AC-coupled) CH2: SW CH4: Inductor current 图 49. Input Voltage Ripple at 100% PWM Duty Cycle 版权 © 2016–2018, Texas Instruments Incorporated 29 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 10 Power Supply Recommendations The devices are designed to operate from an input voltage supply range between 4.5 V and 28 V. This input supply must be well regulated. If the input supply is located more than a few inches from the device or converter, additional bulk capacitance may be required in addition to the ceramic bypass capacitors. 11 Layout The TPS5420x requires a proper layout for optimal performance. The following section gives some guidelines to help ensure a proper layout. 11.1 Layout Guidelines An example of a proper layout for the TPS5420x is shown in 图 50. • Creating a large GND plane for good electrical and thermal performance is important. • The VIN and GND traces should be as wide as possible to reduce trace impedance. The added width also provides excellent heat dissipation. • Thermal vias can be used to connect the topside GND plane to additional printed-circuit board (PCB) layers for heat dissipation and grounding. • The input capacitors must be located as close as possible to the VIN pin and the GND pin. • The SW trace must be kept as short as possible to minimize radiated noise and EMI. • Do not allow switching current to flow under the device. • The FB trace should be kept as short as possible and placed away from the high-voltage switching trace and the ground shield. • In higher-current applications, routing the load current of the current-sense resistor to the junction of the input capacitor and GND node may be necessary. 30 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 11.2 Layout Example LED LOAD VSENSE OUTPUT CAPACITOR SENSE RESISTOR VOUT GND CONNECTED TO POWER GND ON INTERNAL OR BOTTOM LAYER BOOT CAPACITOR OUTPUT INDUCTOR GND BOOT SW PWM VIN FB TO PWM CONTROL SW RC FILTER GND VIN INPUT CAPACITOR CONNECTED TO POWER GND ON INTERNAL OR BOTTOM LAYER VIA to Ground Plane 图 50. Layout Example 版权 © 2016–2018, Texas Instruments Incorporated 31 TPS54200, TPS54201 ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 www.ti.com.cn 12 器件和文档支持 12.1 器件支持 12.1.1 第三方产品免责声明 TI 发布的与第三方产品或服务有关的信息,不能构成与此类产品或服务或保修的适用性有关的认可,不能构成此类 产品或服务单独或与任何 TI 产品或服务一起的表示或认可。 12.2 文档支持 12.2.1 相关链接 下表列出了快速访问链接。类别包括技术文档、支持和社区资源、工具和软件,以及立即订购快速访问。 表 4. 相关链接 器件 产品文件夹 立即订购 技术文档 工具和软件 支持和社区 TPS54200 请单击此处 请单击此处 请单击此处 请单击此处 请单击此处 TPS54201 请单击此处 请单击此处 请单击此处 请单击此处 请单击此处 12.3 接收文档更新通知 要接收文档更新通知,请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我 进行注册,即可每周接收产 品信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。 12.4 社区资源 下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范, 并且不一定反映 TI 的观点;请参阅 TI 的 《使用条款》。 TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在 e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。 设计支持 TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。 12.5 商标 E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.6 静电放电警告 ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可 能会损坏集成电路。 ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可 能会导致器件与其发布的规格不相符。 12.7 术语表 SLYZ022 — TI 术语表。 这份术语表列出并解释术语、缩写和定义。 32 版权 © 2016–2018, Texas Instruments Incorporated TPS54200, TPS54201 www.ti.com.cn ZHCSFQ9B – NOVEMBER 2016 – REVISED JUNE 2018 13 机械、封装和可订购信息 以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知,且 不会对此文档进行修订。如需获取此产品说明书的浏览器版本,请查看左侧的导航面板。 版权 © 2016–2018, Texas Instruments Incorporated 33 重要声明和免责声明 TI 均以“原样”提供技术性及可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资 源,不保证其中不含任何瑕疵,且不做任何明示或暗示的担保,包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示 担保。 所述资源可供专业开发人员应用TI 产品进行设计使用。您将对以下行为独自承担全部责任:(1) 针对您的应用选择合适的TI 产品;(2) 设计、 验证并测试您的应用;(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。所述资源如有变更,恕不另行通知。TI 对您使用 所述资源的授权仅限于开发资源所涉及TI 产品的相关应用。除此之外不得复制或展示所述资源,也不提供其它TI或任何第三方的知识产权授权 许可。如因使用所述资源而产生任何索赔、赔偿、成本、损失及债务等,TI对此概不负责,并且您须赔偿由此对TI 及其代表造成的损害。 TI 所提供产品均受TI 的销售条款 (http://www.ti.com.cn/zh-cn/legal/termsofsale.html) 以及ti.com.cn上或随附TI产品提供的其他可适用条款的约 束。TI提供所述资源并不扩展或以其他方式更改TI 针对TI 产品所发布的可适用的担保范围或担保免责声明。IMPORTANT NOTICE 邮寄地址:上海市浦东新区世纪大道 1568 号中建大厦 32 楼,邮政编码:200122 Copyright © 2018 德州仪器半导体技术(上海)有限公司 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS54200DDCR ACTIVE SOT-23-THIN DDC 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 4200 TPS54200DDCT ACTIVE SOT-23-THIN DDC 6 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 4200 TPS54201DDCR ACTIVE SOT-23-THIN DDC 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 4201 TPS54201DDCT ACTIVE SOT-23-THIN DDC 6 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 4201 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
TPS54201DDCR 价格&库存

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TPS54201DDCR
  •  国内价格
  • 1+8.07950
  • 10+7.45800
  • 30+7.33370

库存:0

TPS54201DDCR
  •  国内价格 香港价格
  • 1+12.256301+1.47790
  • 10+10.3322010+1.24590
  • 100+7.88320100+0.95060
  • 500+6.88030500+0.82970
  • 1000+5.177801000+0.62440
  • 3000+4.932903000+0.59480
  • 6000+4.897906000+0.59060
  • 9000+4.769609000+0.57510

库存:3925

TPS54201DDCR
  •  国内价格
  • 1+3.21840
  • 10+2.60280
  • 30+2.28960
  • 100+1.98720
  • 500+1.64160
  • 1000+1.54440

库存:14057