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TPS783
SBVS133A – FEBRUARY 2010 – REVISED NOVEMBER 2014
TPS783xx 500-nA IQ, 150-mA, Ultralow Quiescent Current
Low-Dropout Linear Regulator
1 Features
3 Description
•
•
•
•
•
•
•
•
•
•
The TPS783 family of low-dropout regulators (LDOs)
offers the benefits of ultralow power and miniaturized
packaging.
1
Input Voltage Range: 2.2 V to 5.5 V
Low Quiescent Current (IQ): 500 nA
150-mA, Low-Dropout Regulator
Low-Dropout at 25°C, 130 mV at 150 mA
Low-Dropout at 85°C, 175 mV at 150 mA
3% Accuracy Over Load, Line, and Temperature
Stable with a 1.0-μF Ceramic Capacitor
Thermal Shutdown and Overcurrent Protection
CMOS Logic Level-Compatible Enable Pin
DDC (SOT-5) Package
2 Applications
•
•
•
•
This LDO family is designed specifically for batterypowered applications where ultralow quiescent
current is a critical parameter. The TPS783, with
ultralow IQ (500 nA), is ideal for microprocessors,
microcontrollers,
and
other
battery-powered
applications.
The absence of pulldown circuitry at the output of the
LDO provides the flexibility to use the regulator output
capacitor as a temporary backup power supply (for
example, during battery replacement).
The ultralow power and miniaturized packaging allow
designers to customize power consumption for
specific applications. Consult with your local factory
representative for exact voltage options and ordering
information; minimum order quantities may apply.
TI MSP430 Attach Applications
Wireless Handsets and Smartphones
MP3 Players
Battery-Operated Handheld Products
The TPS783 family is compatible with the TI MSP430
and other similar products. The enable pin (EN) is
compatible with standard CMOS logic. This device
allows for minimal board space because of
miniaturized packaging and a potentially small output
capacitor. The TPS783 family also features thermal
shutdown and current limit to protect the device
during fault conditions. All packages have a specified
operating temperature range of TJ = –40°C to 105°C.
Device Information(1)
PART NUMBER
TPS783xx
PACKAGE
SOT (5)
BODY SIZE (NOM)
2.90 mm × 1.60 mm
(1) For all available packages, see the package option addendum
at the end of the datasheet.
Simplified Schematic
VIN
IN
VOUT
OUT
2.2 mF
1 mF
TPS783xx
On
Off
TPS783xxDDC
SOT-5
(Top View)
IN
1
GND
2
EN
3
5
OUT
4
GND
EN
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS783
SBVS133A – FEBRUARY 2010 – REVISED NOVEMBER 2014
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
6
Absolute Maximum Ratings ......................................
Handling Ratings.......................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
7.4 Device Functional Modes........................................ 10
8
Application and Implementation ........................ 11
8.1
8.2
8.3
8.4
Application Information............................................
Typical Application ..................................................
System Examples ...................................................
Do's and Don’ts.......................................................
11
11
13
15
9 Power-Supply Recommendations...................... 15
10 Layout................................................................... 15
10.1 Layout Guidelines ................................................. 15
10.2 Layout Example .................................................... 16
11 Device and Documentation Support ................. 17
11.1
11.2
11.3
11.4
Device Support ....................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
12 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
Changes from Original (February 2010) to Revision A
Page
•
Changed document format to latest data sheet standards; added Handling Ratings, Thermal Information,
Recommended Operating Conditions, Power Supply Recommendations, and Device and Documentation Support
sections; moved existing sections .......................................................................................................................................... 1
•
Deleted factory programming feature bullet .......................................................................................................................... 1
•
Added input voltage range feature bullet ............................................................................................................................... 1
•
Deleted programmable mode application bullet ..................................................................................................................... 1
•
Added simplified schematic to front page............................................................................................................................... 1
•
Changed Pin Functions table ................................................................................................................................................ 3
•
Changed operating junction temperature maximum value in Absolute Maximum Ratings table ........................................... 4
•
Deleted Dissipation Ratings table; see Thermal Information table......................................................................................... 4
•
Changed symbol and parameter names for clarity in Electrical Characteristics table ........................................................... 5
•
Added footnote (2) to Electrical Characteristics table ............................................................................................................ 5
•
Changed Figure 7 y-axis title and measurement range ......................................................................................................... 7
•
Changed Figure 9 VEN labels to match Electrical Characteristics table ................................................................................. 7
•
Changed Figure 10 y-axis title to match Electrical Characteristics table ............................................................................... 7
•
Deleted Figure 14 IOUT condition ............................................................................................................................................ 7
•
Deleted Figure 15 IOUT condition ............................................................................................................................................ 7
•
Changed Functional Block Diagram ....................................................................................................................................... 9
•
Changed Figure 18 .............................................................................................................................................................. 10
•
Added reference for Table 1 in Device Functional Modes ................................................................................................... 10
•
Changed Figure 19............................................................................................................................................................... 11
•
Changed Table 2 format....................................................................................................................................................... 14
2
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5 Pin Configuration and Functions
DDC Package
SOT-5
(Top View)
IN
1
GND
2
EN
3
5
OUT
4
GND
Pin Functions
PIN
I/O
DESCRIPTION
3
I
Enable pin. Drive this pin over 1.2 V to turn on the regulator. Drive this pin below 0.4 V to put
the regulator into shutdown mode, reducing operating current to 18 nA, typical.
GND
2, 4
—
IN
1
I
Input pin. For stable operation, place a small, 0.1-μF capacitor from this pin to ground; typical
input capacitor = 1.0 μF. Tie back both input and output capacitor grounds to the IC ground,
with no significant impedance between them.
OUT
5
O
Regulated output voltage pin. Connect a small (1-μF or greater) ceramic capacitor from this
pin to ground for stable operation. See the Input and Output Capacitor Requirements in the
Application and Implementation section for more details.
NAME
NO.
EN
Ground pin. Tie all ground pins to ground for proper operation.
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6 Specifications
6.1 Absolute Maximum Ratings
At TJ = –40°C to 105°C (unless otherwise noted). All voltages are with respect to GND. (1)
Voltage
MAX
UNIT
–0.3
6.0
V
EN pin
–0.3
VIN + 0.3
V
VOUT
–0.3
VIN + 0.3
V
IOUT
Current
Internally limited
Output short-circuit duration
Temperature
(1)
MIN
VIN
A
Indefinite
Operating junction, TJ
–40
160
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 Handling Ratings
Tstg
Electrostatic
discharge
V(ESD)
(1)
(2)
MIN
MAX
UNIT
–55
150
°C
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
–2000
2000
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2)
–500
500
Storage temperature range
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input voltage
2.2
5.5
V
VOUT
Output voltage
1.8
4.2
V
VEN
Enable voltage
0
VIN
V
IOUT
Output current
0
150
mA
TJ
Junction temperature
–40
105
°C
6.4 Thermal Information
TPS783xx
THERMAL METRIC (1)
DDC (SOT)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
193.0
RθJC(top)
Junction-to-case (top) thermal resistance
40.0
RθJB
Junction-to-board thermal resistance
34.3
ψJT
Junction-to-top characterization parameter
0.9
ψJB
Junction-to-board characterization parameter
34.1
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
(1)
4
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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6.5 Electrical Characteristics
At TJ = –40°C to 105°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1.0 μF,
and fixed VOUT test conditions (unless otherwise noted). Typical values at TJ = 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
VIN
Input voltage range
VOUT
DC output accuracy
ΔVO(ΔVI)
Line regulation
VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V
±1.0%
ΔVO(ΔIO)
Load regulation
100 μA ≤ IOUT ≤ 150 mA
±1.0%
VDO
Dropout voltage (1)
VIN = 95% VOUT(nom), IOUT = 150 mA
ILIM
Output current limit
VOUT = 0.90 × VOUT(nom)
IGND
GND pin current
IEN
EN pin current
Nominal
TJ = 25°C
Over VIN, IOUT, VOUT + 0.5 V ≤ VIN ≤ 5.5 V,
temperature
100 μA ≤ IOUT ≤ 150 mA
MAX
2.2
5.5
–2%
2%
–3.0%
150
IOUT = 0 mA
IOUT = 150 mA
±2.0%
UNIT
V
3.0%
130
250
mV
230
400
mA
420
800
nA
μA
8
VIN = VEN = 5.5 V
ISHDN(GND)
Shutdown current at GND pin
VEN ≤ 0.4 V, VIN(min) ≤ VIN < 5.5 V
ISHDN(OUT)
Shutdown current at OUT pin
(leakage) (3)
VIN = open, VEN = 0.4 V,
VOUT = VOUT(nom)
VEN(HI)
Enable high-level voltage
VIN = 5.5 V
VEN(LO)
Enable low-level voltage
VIN = 5.5 V
(2)
0.07
40
nA
18
150
nA
137
500
nA
VIN
V
1.2
0
0.4
V
f = 10 Hz
40
dB
f = 100 Hz
20
dB
f = 1 kHz
15
dB
86
μVRMS
Power-supply rejection ratio
VIN = 4.3 V,
VOUT = 3.0 V,
IOUT = 150 mA
Vn
Output noise voltage
BW = 100 Hz to 100 kHz, VIN = 2.2 V,
VOUT = 1.2 V, IOUT = 1 mA
tSTR
Startup time (4)
COUT = 1.0 μF, VOUT = 10% VOUT(nom) to
VOUT = 90% VOUT(nom)
500
μs
Tsd
Thermal shutdown temperature
Shutdown, temperature increasing
160
°C
Reset, temperature decreasing
140
°C
TJ
Operating junction temperature
PSRR
(1)
(2)
(3)
(4)
–40
125
°C
VDO is not measured for devices with VOUT(nom) ≤ 2.3 V because minimum VIN = 2.2 V.
VIN(min) = (VOUT(nom) + 0.5 V) or 2.2 V, whichever is greater.
See Shutdown in the Application and Implementation section for more details.
Time from VEN = 1.2 V to VOUT = 90% (VOUT(nom)).
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6.6 Typical Characteristics
At TJ = –40°C to 105°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1 μF, and
CIN = 1 μF (unless otherwise noted).
3
1.0
0.8
-40°C
0.6
2
1
+85°C
+25°C
0.2
VOUT (%)
VOUT (%)
0.4
0
+105°C
-0.2
+25°C
+105°C
-1
-0.4
-0.6
-40°C
0
+85°C
-2
-0.8
-3
-1.0
3.5
3.7
3.9
4.1
4.5
4.3
4.7
4.9
5.1
5.5
5.3
3.5
3.7
3.9
4.1
4.3
4.5
4.7
4.9
5.1
IOUT = 5 mA, VOUT(nom) = 3.0 V
5.5
IOUT = 150 mA, VOUT(nom) = 3.0 V
Figure 1. TPS78330 Line Regulation
Figure 2. TPS78330 Line Regulation
3
200
+85°C
1
-40°C
VDO (VIN - VOUT) (mV)
2
VOUT (%)
5.3
VIN (V)
VIN (V)
+25°C
0
+105°C
+85°C
-1
150
+105°C
100
+25°C
50
-40°C
-2
-3
0
0
25
75
50
100
125
0
150
25
50
75
100
125
150
IOUT (mA)
IOUT (mA)
VIN = 3.5 V, VOUT(nom) = 3.0 V
VOUT(nom) = 3.0 V, VIN = 0.95 × VOUT(nom)
Figure 3. TPS78330 Load Regulation
Figure 4. TPS78330 Dropout Voltage vs Output Current
900
250
700
600
150
100mA
150mA
100
50mA
IGND (nA)
VDO (VIN - VOUT) (mV)
800
200
+85°C
500
400
300
-40°C
200
50
10mA
+25°C
100
0
0
-40 -25 -10
5
20
35
50
65
80
95
110 125
3.8
4.2
4.4
4.6
4.8
5.0
5.2
5.4 5.5
IOUT = 0 mA, VOUT(nom) = 3.0 V
VOUT(nom) = 3.0 V, VIN = 0.95 × VOUT(nom)
Figure 5. TPS78330 Dropout Voltage vs
Junction Temperature
6
4.0
VIN (V)
TJ (°C)
Figure 6. TPS78330 Ground Pin Current vs Input Voltage
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Typical Characteristics (continued)
At TJ = –40°C to 105°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1 μF, and
CIN = 1 μF (unless otherwise noted).
250
3.0
-40°C
2.7
240
+105°C
2.4
230
IEN (nA)
ILIM (mA)
2.1
+25°C
220
1.8
1.5
1.2
+85°C
0.9
210
0.6
+105°C
+85°C
0.3
3.5
3.7
3.9
4.1
4.5
4.3
4.7
4.9
5.1
5.3
5.5
+25°C
-40°C
0
200
3.5
3.7
3.9
4.1
4.5
4.3
VIN (V)
4.7
4.9
5.1
5.3
5.5
VIN (V)
VOUT = 95% VOUT(nom), VOUT(nom) = 3.0 V
IOUT = 100 μA, VOUT(nom) = 3.0 V
Figure 7. TPS78330 Current Limit vs Input Voltage
Figure 8. TPS78330 Enable Pin Current vs Input Voltage
250
1.2
1.1
VEN(HI)
VEN (V)
0.9
0.8
0.7
VEN(LO)
ISHDN(OUT) (nA)
200
1.0
150
+105°C
100
+85°C
+25°C
0.6
50
0.5
-40°C
0.4
0
-40 -25 -10
5
20
35
50
65
80
95
110 125
1.0
1.2
1.4
1.6
1.8
TJ (°C)
IOUT = 1 mA, VOUT(nom) = 3.0 V
2.4
2.6
2.8
3.0
Figure 10. TPS78330 Output Current Leakage at Shutdown
100
3
2
10
1
150mA
0.1
100mA
10mA
0
150mA
5mA
-1
-2
1mA
-3
0.001
100
1
50mA
1mA = 130mVRMS
50mA = 134mVRMS
150mA = 138.0mVRMS
10
DVOUT(NOM) (%)
Output Spectral Noise Density (mV/ÖHz)
2.2
VOUT = VOUT(nom) = 3.0 V, VEN = 0.4 V
Figure 9. TPS78330 Enable Pin Hysteresis vs
Junction Temperature
0.01
2.0
VOUT (V)
1k
10k
100k
-40 -25 -10
5
20
35
50
65
80
95
110 125
TJ (°C)
Frequency (Hz)
CIN = 1 μF, COUT = 2.2 μF, VIN = 3.5 V, VOUT(nom) = 3.0 V
Figure 11. TPS78330 Output Spectral Noise Density
VIN = 3.5 V, VOUT(nom) = 3.0 V
Figure 12. TPS78330 %ΔVO vs Junction Temperature
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Typical Characteristics (continued)
At TJ = –40°C to 105°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1 μF, and
CIN = 1 μF (unless otherwise noted).
VIN = 0.0V to 5.0V
VOUT = 3.0V
COUT = 10mF
VIN
70
50
50mA
40
Enable
Voltage (1V/div)
1mA
60
Current (50mA/div)
Power-Supply Rejection Ratio (dB)
80
VOUT
Load Current
30
0V
20
150mA
10
0
10
100
1k
10k
100k
Time (20ms/div)
1M
Frequency (Hz)
VIN = 3.5 V, VOUT(nom) = 3.0 V, COUT = 2.2 μF
Figure 13. TPS78330 Ripple Rejection vs Frequency
Enable
Load Current
VIN = 5.5V
VOUT = 3.0V
COUT = 10mF
VIN = 5.5V
VOUT = 3.0V
IOUT = 150mA
COUT = 10mF
VIN
Voltage (1V/div)
VOUT
Current (50mA/div)
Voltage (1V/div)
VIN
Figure 14. TPS78330 Input Voltage Ramp vs Output Voltage
VENABLE
VOUT
0V
Time (500ms/div)
Time (20ms/div)
Voltage
(100mV/div)
Figure 15. TPS78330 Output Voltage vs Enable (Slow Ramp)
VIN
Figure 16. TPS78330 Input Voltage vs Delay to Output
Enable
VOUT
Load
Current
Current
(10mA/div)
VIN = 5.5V
VOUT = 3.0V
IOUT = 0mA to 10mA
COUT = 10mF
0A
Time (5ms/div)
Figure 17. TPS78330 Load Transient Response
8
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7 Detailed Description
7.1 Overview
The TPS783 family of low-dropout regulators (LDOs) designed specifically for battery-powered applications
where ultralow quiescent current is a critical parameter. The absence of pulldown circuitry at the output of the
LDO provides the flexibility to use the regulator output capacitor as a temporary backup power supply for a short
period of time (for example, during battery replacement). The TPS783 family is compatible with the TI MSP430
and other similar products. The enable pin (EN) is compatible with standard CMOS logic. This LDO family is
stable with any output capacitor greater than 1.0 µF.
7.2 Functional Block Diagram
IN
OUT
Current
Limit
++
±±
EN
Thermal
Shutdown
EPROM
Mux
Bandgap
Logic
GND
7.3 Feature Description
7.3.1 Internal Current Limit
The TPS783 is internally current-limited to protect the regulator during fault conditions. During current limit, the
output sources a fixed amount of current that is largely independent of output voltage. For reliable operation, do
not operate the device in a current-limit state for extended periods of time.
The PMOS pass element in the TPS783 family has a built-in body diode that conducts current when the voltage
at OUT exceeds the voltage at IN. This current is not limited, so if extended reverse voltage operation is
anticipated, external limiting up to the maximum rated current for the device may be required.
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Feature Description (continued)
7.3.2 Shutdown
The enable pin (EN) is active high and is compatible with standard and low-voltage CMOS levels. When
shutdown capability is not required, connect EN to the IN pin, as shown in Figure 18.
VIN
IN
VOUT
OUT
1mF
1mF
TPS783xx
EN
GND
Figure 18. Circuit Showing EN Tied High When Shutdown Capability is Not Required
7.4 Device Functional Modes
Table 1 provides a quick comparison between the normal, dropout, and disabled modes of operation.
Table 1. Device Functional Mode Comparison
PARAMETER
OPERATING MODE
VIN
EN
IOUT
TJ
Normal
VIN > VOUT(nom) + VDO
VEN > VEN(HI)
IOUT < ILIM
TJ < 160°C
Dropout
VIN < VOUT(nom) + VDO
VEN > VEN(HI)
IOUT < ILIM
TJ < 160°C
Disabled
—
VEN < VEN(LO)
—
TJ > 160°C
7.4.1 Normal Operation
The device regulates to the nominal output voltage under the following conditions:
• The input voltage is greater than the nominal output voltage plus the dropout voltage (VOUT(nom) + VDO).
• The enable voltage has previously exceeded the enable rising threshold voltage (VEN > VEN(HI)) and not yet
decreased below the enable falling threshold.
• The output current is less than the current limit (IOUT < ILIM).
• The device junction temperature is less than the thermal shutdown temperature (TJ < 160°C).
7.4.2 Dropout Operation
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other
conditions are met for normal operation, the device operates in dropout mode. In this mode, the output voltage
tracks the input voltage. During this mode, the transient performance of the device becomes significantly
degraded because the pass device is in a triode state and no longer controls the current through the LDO. Line
or load transients in dropout can result in large output-voltage deviations.
7.4.3 Disabled
The device is disabled under the following conditions:
• The enable voltage is less than the enable falling threshold voltage (VEN < VEN(LO)) or has not yet exceeded
the enable rising threshold.
• The device junction temperature is greater than the thermal shutdown temperature (TJ > 160°C).
10
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS783 family of LDOs is factory-programmable to have a fixed output. Note that during startup or steadystate conditions, do not allow the EN pin voltage to exceed VIN + 0.3 V.
8.2 Typical Application
VIN
IN
VOUT
OUT
2.2 mF
1 mF
TPS783xx
On
Off
EN
GND
Figure 19. Providing a Low-Power Standby Rail
8.2.1 Design Requirements
8.2.1.1 Input and Output Capacitor Requirements
A 0.1-μF input capacitor is necessary for stable operation. Good analog design practice is to connect a 0.1-μF to
1.0-μF, low equivalent series resistance (ESR) capacitor across the input supply near the regulator. This
capacitor counteracts reactive input sources and improves transient response, noise rejection, and ripple
rejection. A higher-value capacitor may be necessary if large, fast rise-time load transients are anticipated, or if
the device is not located near the power source.
The TPS783 family is designed to be stable with standard ceramic capacitors with values of 1.0 μF or larger at
the output. X5R- and X7R-type capacitors are best because they have minimal variation in value and ESR over
temperature. Maximum ESR must be less than 1.0 Ω. With tolerance and dc bias effects, the minimum
capacitance for stable operation is 1 μF.
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Typical Application (continued)
8.2.1.2 Dropout Voltage
The TPS783 family uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the
dropout voltage (VDO), the PMOS pass device is the linear region of operation and the input-to-output resistance
is the RDS(ON) of the PMOS pass element. VDO approximately scales with output current because the PMOS
device behaves like a resistor in dropout. As with any linear regulator, PSRR and transient response are
degraded as (VIN – VOUT) approaches dropout. This effect is shown in the Typical Characteristics section. Refer
to application report SLVA207, Understanding LDO Dropout, available for download from www.ti.com.
8.2.1.3 Transient Response
As with any regulator, increasing the size of the output capacitor reduces overshoot and undershoot magnitude
but increases duration of the transient response. For more information, see Figure 17.
8.2.1.4 Minimum Load
The TPS783 family is stable with no output load. Traditional PMOS LDO regulators suffer from lower loop gain at
very light output loads. The TPS783 employs an innovative, low-current circuit under very light or no-load
conditions, resulting in improved output voltage regulation performance down to zero output current. See
Figure 17 for the load transient response.
8.2.2 Detailed Design Procedure
Select the desired device based on the output voltage.
Provide an input supply with adequate headroom to account for dropout and output current to account for the
GND pin current, and power the load. Select input and output capacitors based on application needs.
100
80
10
1
150mA
0.1
0.01
50mA
1mA = 130mVRMS
50mA = 134mVRMS
150mA = 138.0mVRMS
1mA
Power-Supply Rejection Ratio (dB)
Output Spectral Noise Density (mV/ÖHz)
8.2.3 Application Curves
70
1mA
60
50
50mA
40
30
20
150mA
10
0
0.001
10
100
1k
10k
100k
10
CIN = 1 μF, COUT = 2.2 μF, VIN = 3.5 V, VOUT(nom) = 3.0 V
Figure 20. TPS78330 Output Spectral Noise Density
12
100
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
VIN = 3.5 V, VOUT(nom) = 3.0 V, COUT = 2.2 μF
Figure 21. TPS78330 Ripple Rejection vs Frequency
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8.3 System Examples
The TPS783 family is designed to be compatible with low-power microprocessors and microcontrollers such as
the TI MSP430. In particular, the ultralow quiescent current allows for the TPS783 family to be used in batterypowered applications.
When the system is active, a voltage supervisor enables the regulator and puts the MSP430 into active mode
when there is a battery installed and its voltage is above a certain threshold, as shown in Figure 22. The dashed
red line indicates the ground current.
ImC
IN
OUT
Battery
MSP430
10% Duty Cycle
TPS783xx
EN = High
EN
SVS
GND
Battery OK
500nA
Figure 22. MSP430 Application in Active Mode
When the battery is depleted, the voltage supervisor signals to replace the system battery. After the battery is
removed, the voltage supervisor disables the regulator and signals the MSP430 to go into low-power mode. At
this moment, the output capacitor functions as a power supply for the MSP430 during the absence of the battery
while it is being replaced, as Figure 23 illustrates. The dashed red line indicates the ground current.
ILP
IN
OUT
No Battery
COUT
MSP430
10% Duty Cycle
TPS783xx
EN = Low
EN
SVS
GND
Battery Low
150nA = ILKG
Low-Power Mode
Figure 23. MSP430 Application While Battery is Replaced
Equation 1 shows how to find the required value of the output capacitor (COUT) to provide an appropriate voltage
level to the MSP430 for a given amount of time. This time varies from a few seconds to a few minutes,
depending on several factors.
tMAX
COUT =
VOUT(Nom) - VMIN
ILKG + ILP
where
•
•
•
•
•
tMAX = maximum time to replace depleted battery
VOUT(nom) = nominal regulator output equal to initial voltage of capacitor when regulator is disabled
VMIN = minimum voltage required by MSP430
I(LKG) = leakage current into regulator output
I(LP) = current demand from MSP430 in low-power mode
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System Examples (continued)
8.3.1 Extending Battery Life in Keep-Alive Circuitry Applications for MSP430 and Other Low-Power
Microcontrollers
One of the primary advantages of a low quiescent current LDO is the extremely low energy requirement.
Counter-intuitively, this requirement enables a longer battery life compared to using only the battery as an
unregulated voltage supply for low-power microcontrollers, such as the MSP430. Figure 24 illustrates the
characteristic performance of an unregulated, 3.0-V battery supply versus a regulated TPS783 supply for a
typical MSP430 application. Table 2 summarizes this comparison.
90
Battery, VCC = 3.0V
TPS783, VCC = 2.2V
80
Battery Life (Days)
70
60
50
40
30
20
10
0
5 10
20
30
40
50
60
70
80
90
100
Duty Cycle (Time in Active Mode) (%)
Calculated with an MSP430F model, operating at 6 MHz.
Figure 24. Battery Life Comparison vs Duty Cycle for MSP430 Application
Table 2. Battery Life Comparison vs Active Mode Time for MSP430 Application
TPS783xx
(NO. OF DAYS)
BATTERY ONLY
(NO. OF DAYS)
1-μA LDO
(NO. OF DAYS)
Active mode, 1 sec/hour (0.028% duty cycle)
5742
6286
4373
Active mode, 10 sec/hour (0.28% duty cycle)
1320
998
1085
Active mode, 100 sec/hour (2.8% duty cycle)
151
106
148
Active mode, 1000 sec/hour (28% duty cycle)
15.4
10.7
15.4
4.2
3.0
4.2
ACTIVE DUTY CYCLE
Active mode, on all the time (100% duty cycle)
CONDITIONS
Efficiency with VBAT = 3.0 V and VCC = 2.2 V (VOUT/VIN)
LDO quiescent current (IQ)
MSP430 active current
MSP430 low-power current
73%
100%
73%
0.5 μA
0
1 μA
2.19 mA
3.09 mA
2.19 mA
0.5 μA
0.6 μA
0.5 μA
8.3.2 Supercapacitor-Based Backup Power
The very-low leakage current at the LDO output provides a system with the flexibility to use the device output
capacitor, or supercapacitor, as a temporary backup power supply. The leakage current going into the regulator
output from the output capacitor when the LDO is disabled is typically 170 nA; see Figure 10.
14
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8.4 Do's and Don’ts
Do place at least one 1-µF ceramic capacitor as close as possible to the OUT pin of the regulator.
Do not place the output capacitor more than 10 mm away from the regulator.
Do connect a 0.1-μF to 1.0-μF low equivalent series resistance (ESR) capacitor across the IN pin and GND of
the regulator.
Do not exceed the absolute maximum ratings.
9 Power-Supply Recommendations
For best performance, connect a low-output impedance power supply directly to the IN pin of the TPS783.
Inductive impedances between the input supply and the IN pin create significant voltage excursions at the IN pin
during startup or load transient events. If inductive impedances are unavoidable, use an input capacitor.
10 Layout
10.1 Layout Guidelines
10.1.1 Board Layout Recommendations to Improve PSRR and Noise Performance
To improve ac performance (such as PSRR, output noise, and transient response), design the printed circuit
board (PCB) with separate ground planes for VIN and VOUT, with each ground plane connected only at the GND
pin of the device. In addition, the output capacitor must be as close as possible to the ground pin of the device to
provide a common reference for regulation purposes. High ESR capacitors may degrade PSRR.
10.1.2 Package Mounting
Solder pad footprint recommendations for the TPS783 series are available from the Texas Instruments website
at www.ti.com through the TPS783 family product folders.
10.1.3 Thermal Information
10.1.3.1 Thermal Protection
Thermal protection disables the device output when the junction temperature rises to approximately 160°C,
allowing the device to cool. After the junction temperature cools to approximately 140°C, the output circuitry is
enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection
circuit may cycle on and off again. This cycling limits the dissipation of the regulator, protecting it from damage
as a result of overheating.
Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate
heatsink. For reliable operation, limit junction temperature to 105°C maximum. To estimate the margin of safety
in a complete design (including heatsink), increase the ambient temperature until the thermal protection is
triggered; use worst-case loads and signal conditions.
The internal protection circuitry of the TPS783 family is designed to protect against overload conditions.
However, this circuitry is not intended to replace proper heatsinking. Continuously running the TPS783 series
into thermal shutdown degrades device reliability.
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Layout Guidelines (continued)
10.1.3.2 Power Dissipation
The ability to remove heat from the die is different for each package type, presenting different considerations in
the PCB layout. The PCB area around the device that is free of other components moves the heat from the
device to the ambient air. Performance data for JEDEC low- and high-K boards are given in the Thermal
Information table. Using heavier copper increases the effectiveness in removing heat from the device. The
addition of plated through-holes to heat-dissipating layers also improves the heatsink effectiveness. Power
dissipation depends on input voltage and load conditions. Power dissipation (PD) is equal to the product of the
output current times the voltage drop across the output pass element (VIN to VOUT), as shown in Equation 2:
PD = (VIN - VOUT) ´ IOUT
(2)
10.2 Layout Example
VIN
VOUT
CIN
COUT
GND PLANE
Represents via used for
application-specific connections
Figure 25. TPS783xx Layout Example
16
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 Evaluation Modules
An evaluation module (EVM) is available to assist in the initial circuit performance evaluation using the TPS783.
The TPS782xxEVM evaluation modules (and related user guide) can be requested at the Texas Instruments
website through the product folders or purchased directly from the TI eStore.
11.1.1.2 Spice Models
Computer simulation of circuit performance using SPICE is often useful when analyzing the performance of
analog circuits and systems. A SPICE model for the TPS783 is available through the product folders under
Simulation Models.
11.1.2 Device Nomenclature
Table 3. Device Nomenclature (1)
PRODUCT
TPS783xxyyyz
(1)
VOUT
XX is the nominal output voltage
YYY is the package designator.
Z is the tape and reel quantity (R = 3000, T = 250).
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
11.2 Trademarks
All trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS78318DDCR
ACTIVE
SOT-23-THIN
DDC
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
SIO
TPS78318DDCT
ACTIVE
SOT-23-THIN
DDC
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
SIO
TPS78319DDCR
ACTIVE
SOT-23-THIN
DDC
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
SIP
TPS78319DDCT
ACTIVE
SOT-23-THIN
DDC
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
SIP
TPS78326DDCR
ACTIVE
SOT-23-THIN
DDC
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
SIB
TPS78326DDCT
ACTIVE
SOT-23-THIN
DDC
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
SIB
TPS78330DDCR
ACTIVE
SOT-23-THIN
DDC
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
DAZ
TPS78330DDCT
ACTIVE
SOT-23-THIN
DDC
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
DAZ
TPS78342DDCR
ACTIVE
SOT-23-THIN
DDC
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
SIQ
TPS78342DDCT
ACTIVE
SOT-23-THIN
DDC
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
SIQ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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