TXS4555RUTR

TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 1.8V/3V SIM Card Power Supply With Level Translator Check for Samples: TXS4555 FEATURES 1 • 3 NC 4 11 SIMCLK 10 GND 9 SIMRST NC I/O RST CLK 16 15 14 13 Note: The Exposed center thermal pad must be connected to Ground RUT Package (Top View) EN I/O RST CLK SIMCLK 10 9 8 7 2 3 4 5 VBATT VSIM SIMI/O SIMRST 6 1 12 VCC SEL 11 DESCRIPTION The TXS4555 is a complete Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with a SIM card to store I/O for mobile handset applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a highspeed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, a lowdropout (LDO) voltage regulator that has output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces. NC 8 VCC Exposed Thermal Pad 12 SIMI/O 2 7 SEL VSIM 1 6 • EN NC • RGT Package (Top View) 5 • Level Translator – VCC Range of 1.65 V to 3.3 V – VBATT Range from 2.3 to 5.5V Low-Dropout (LDO) Regulator – 50-mA LDO Regulator With Enable – 1.8-V or 2.95-V Selectable Output Voltage – 2.3-V to 5.5-V Input Voltage Range – Very Low Dropout: 100mV (Max) at 50mA Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7816-3 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-B) – 500-V Charged-Device Model (C101) – 8kV HBM for SIM Pins Package – 16-Pin QFN (3 mm x 3 mm) – 12-Pin QFN (2mm x 1.7mm) VBATT • GND The device has two supply voltage pins. VCC can be operated over the full range of 1.65 V to 3.3 V and VBATT from 2.3 to 5.5 V. VPWR is set to either 1.8 V or 2.95 V and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5 V and outputs either 1.8 V or 2.95 V at 50 mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to easily interface low-voltage microprocessors to SIM cards operating at 1.8 V or 2.95 V. The TXS4555 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. Proper shutdown of the SIM card signals helps in prevention of corruption of data during accidental shutdown of the phone. The device also has 8kV HBM protection for the SIM pins and standard 2kV HBM protection for all the other pins. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2011–2013, Texas Instruments Incorporated TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. VBATT (2.3 to 5.5 V) Core Supply VCC (1.65 to 3.3 V) LDO Baseband 2.95 V or 1.8 V, 50 mA Reset CLK Translator I/O Vcc GND RST Vpp CLK I/O NC NC Figure 1. Interfacing with SIM Card PIN FUNCTIONS PIN NAME PIN NO. RGT RUT EN 1 11 SEL 2 Vcc 3 VBATT TYPE (1) DESCRIPTION I Enable/disable control input. Pull EN low to place all outputs in Hi-Z state and to disable the LDO. Referenced to VCC. 12 I Pin to program VSIM value (Low = 1.8V, High = 2.95V) 1 P Power supply voltage which powers all A-port I/Os and control inputs 5 2 P Battery power supply VSIM 7 3 O SIM card Power-Supply pin (1.8V or 2.95V) SIM_I/O 8 4 I/O Bidirectional SIM I/O pin which connected to I/O pin of the SIM card connector SIM_RST 9 5 O SIM Reset pin which connects to RESET pin of the SIM card connector GND 10 6 G Ground SIM_CLK 11 7 O Clock signal pin which connects to CLK pin of the SIM card connector CLK 13 8 I Clock signal pin connected from baseband processor RST 14 9 I SIM Reset pin connected from baseband processor I/O 15 10 I/O Bidirectional SIM I/O pin which connected from baseband processor NC 4, 6, 12, 16 – NC No Connects (1) 2 G = Ground, I = Input, O = Output, P = Power Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TXS4555 TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 Figure 2. Block Diagram VBATT Cin = 1 mF VSIM Vref R 1 Cout = 1 mF R 2 GND Figure 3. Block Diagram of the LDO Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TXS4555 3 TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com EN SIM_RST SIM_CLK Active Data SIM_I/O VSIM Figure 4. Shutdown Sequence for SIM_RST, SIM_CLK, SIM_IO and VSIM The shutdown sequence for the SIM signals is based on the ISO 7816-3 specification. The shutdown sequence of these signals helps to properly disable these channels and not have any corruption of data accidently. Also, this is also helpful when the SIM card is present in a hot swap slot and when pulling out the SIM card, the orderly shutdown of these signals help avoid any improper write/corruption of data. When EN is taken low, the shutdown sequence happens by powering of the SIM_RST channel. Once that is achieved, SIM_CLK, SIM_I/O and VSIM are powered sequentially one by one. There is an internal 2K pull-down value on the SIM pins and helps to pull these channels low. The shutdown time sequence is in the order of a few microseconds. It is important that EN is taken low before VBAT and VCC supplies go low so that the shutdown sequence can be initiated properly. 4 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TXS4555 TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) VALUE MIN MAX UNIT LEVEL TRANSLATOR VCC Supply voltage range VI Input voltage range Voltage range applied to any output in the high-impedance or power-off state VO Voltage range applied to any output in the high or low state VO –0.3 4.0 VCC-port –0.5 4.6 SIM-port –0.5 4.6 Control inputs –0.5 4.6 VCC -port –0.5 4.6 VSIM-port –0.5 4.6 Control inputs –0.5 4.6 VCC-port –0.5 4.6 SIM-port –0.5 4.6 Control inputs –0.5 4.6 V V V V IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current Continuous current through VCCA or GND Tstg ±50 mA ±100 mA Storage temperature range –65 150 °C VBAT Input voltage range –0.3 6 V VOUT Output voltage range –0.3 6 V Peak output current TBD LDO Continuous total power dissipation mA TBD TJ Junction temperature range –55 150 °C Tstg Storage temperature range –55 150 °C 2 kV Human-Body Model (HBM) ESD rating (host side) Charged-Device Model (CDM) ESD rating (SIM side) (1) Human-Body Model (HBM) 500 V 8 kV Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. THERMAL INFORMATION TXS4555 THERMAL METRIC (1) RGT RUT 16 PINS 12 PINS 47 87.2 25.12 N/A θJA Junction-to-ambient thermal resistance θJB Junction-to-board thermal resistance ψJT Junction-to-top characterization parameter 1.3 1.7 θJCbot Junction-to-case (bottom) thermal resistance 3.6 n/A (1) UNITS °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TXS4555 5 TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com RECOMMENDED OPERATING CONDITIONS (1) MIN MAX UNIT LEVEL TRANSLATOR VCC Supply voltage 1.65 3.3 EN, SEL, RST, CLK, I/O VCC × 0.7 VCC Vsim × 0.7 Vsim VIH High-level input voltage VCC - port SIM - port SIM_I/O VIL Low-level input voltage VCC - port EN, SEL, RST, CLK, I/O 0 VCC × 0.3 SIM - port SIM_I/O 0 Vsim × 0.3 –40 85 Δt/Δv Input transition rise or fall rate TA (1) V V V 5 ns/V Operating free-air temperature °C All unused data inputs of the device must be held at VCCI or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. ELECTRICAL CHARACTERISTICS – LEVEL TRANSLATOR over recommended operating free-air temperature range (unless otherwise noted) PARAMETER VOH VOL TEST CONDITIONS VCC (2) IOH = –1mA SIM_CLK IOH = –1mA VSIM × 0.8 SIM_I/O IOH = –20 µA VSIM × 0.8 I/O IOH = –20 µA IOL = 1 mA SIM_CLK IOL = 1mA SIM_I/O IOL = 1 mA I/O IOL = 1 mA 1.8 V / 2.95 V MIN SIM_RST SIM_RST 1.65 V to 3.3 V VSIM 1.65 V to 3.3 V 1.8 V / 2.95 V VSIM × 0.2 V 0.3 0.3 (2) VI = EN, 1.8V/3V 1.65 V to 3.3 V 1.8 V / 2.95 V I/O VI = VCCI, IO = 0 1.65 V to 3.3 V 1.8 V / 2.95 V (2) (1) (2) V VSIM × 0.2 Control inputs I/O port ±1 µA ±5 µA 8 SIM ports Control inputs UNIT VCC × 0.8 ICC Ci MAX VSIM × 0.8 (2) II Cio TYP (1) pF 4 VI = VCC or GND 4 pF All typical values are at TA = 25°C. (Supplied by LDO) LDO ELECTRICAL CHARACTERISTICS PARAMETER VBAT Input voltage VSIM Output voltage TEST CONDITIONS MIN TYP (1) MAX UNIT 2.3 Class-B Mode (SEL = VCC) Class-C Mode (SEL = 0) 5.5 V 2.85 2.95 3.05 V 1.7 1.8 1.9 VDO Dropout voltage IOUT = 50 mA 100 mV IGND Ground-pin current IOUT = 0 mA 35 µA ISHDN Shutdown current (IGND) VENx ≤ 0.4 V, (VSIM + VDO) ≤ VBAT ≤ 5.5 V, TJ = 85°C 3.5 µA IOUT(SC) Short-circuit current RL = 0 Ω COUT Output Capacitor f = 1 kHz 50 f = 10 kHz 40 PSRR Power-supply rejection ratio VBAT = 3.25 V, VSIM = 1.8 V or 2.95 V, COUT = 1 µF, IOUT = 50 mA TSTR Start-up time VSIM = 1.8 V or 2.95 V, IOUT = 50 mA, COUT = 1 µF TJ Operating junction temperature (1) 6 –40 145 mA 1 µF dB 400 µS 125 °C All typical values are at TA = 25°C. Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TXS4555 TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 GENERAL ELECTRICAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RI/OPU I/O pull-up 16 20 24 kΩ RSIMPU SIM_I/O pull-up 10 14 18 kΩ 3 kΩ RSIMPD SIM_I/O pull-down Active pull-downs are connected to the VSIM regulator output to the SIM_CLK, SIM_RST, SIM_I/O when EN = 0 SWITCHING CHARACTERISTICS over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS VCC = 1.8 V ± 0.15 V MIN UNIT MAX VSIM = 1.8 V or 2.95 V SUPPLIED BY INTERNAL LDO trA trB SIM_I/O 1 µs SIM_RST 1 µs SIM_CLK 18 ns 1 us SIM_I/O fmax SIM_CLK Duty Cycle SIM_CLK CL = 50 pF 25 MHz 40% 60% OPERATING CHARACTERISTICS TA = 25°C, VSIM = 1.8 V PARAMETER CpdA (1) (1) Class B Class C TEST CONDITIONS CL = 0, f = 5 MHz, tr = tf = 1 ns Vcc TYP UNIT 1.8 V 13 11 pF Power dissipation capacitance per transceiver. Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TXS4555 7 TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com TYPICAL CHARACTERISTICS 110 VBAT = 3.25 V, ILOAD = 50 mA -80 1.8 V Vsim 90 -70 -60 2.95 V Vsim -50 VBAT = 5.5 V 100 VDO - Dropout Voltage - mV PSRR - Power Supply Rejection Ratio - dB -90 -40 -30 -20 85°C Vsim 80 70 25°C Vsim 60 50 40 30 -40°C Vsim 20 -10 10 0 100 1k 10k f - Frequency - Hz 100k 0 1M 0 1 0 0.8 0.6 -0.2 0.4 0.2 -2 -2.2 -2.4 -40 -30 -20 -10 -50 mA, Vism 50 -40°C Vsim -0.6 -0.8 -1 85°C Vsim -1.2 -1.4 25°C Vsim -1.6 -1.8 -2 0 10 20 30 40 50 60 70 80 TA - Temperature - °C Figure 7. Output Voltage vs Temperature, Class-B/C 8 15 20 25 30 35 40 45 IOUT Output Current - mA Figure 6. Dropout Voltage vs Output Current -0.4 -100 mA, Vism 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 10 IO = 50 mA DVOUT - Output Voltage - % DVOUT - Output Voltage - % Figure 5. PSRR 5 0 15 20 25 30 35 40 45 50 IOUT Output Current - mA Figure 8. Load Regulation, Iout = 50 mA, Class-C Submit Documentation Feedback 5 10 Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TXS4555 TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 APPLICATION INFORMATION The LDO’s included on the TXS4555 achieve ultra-wide bandwidth and high loop gain, resulting in extremely high PSRR at very low headroom (VBAT – VSIM). The TXS4555 provides fixed regulation at 1.8V or 2.95V. Low noise, enable, low ground pin current make it ideal for portable applications. The device offers sub-bandgap output voltages, current limit and thermal protection, and is fully specified from –40°C to 125°C. VSIM VCC TXS4555 VBAT GND 1 mF 1 mF 0.1 mF Figure 9. Typical Application Circuit for TXS4555 INPUT AND OUTPUT CAPACITOR REQUIREMENTS It is good analog design practice to connect a 1.0 µF low equivalent series resistance (ESR) capacitor across the input supply (VBAT) near the regulator. Also, a 0.1µF is required for the logic core supply (VDDIO). This capacitor will counteract reactive input sources and improve transient response, noise rejection, and ripple rejection. A higher-value capacitor may be necessary if large, fast rise-time load transients are anticipated or if the device is located several inches from the power source. The LDO’s are designed to be stable with standard ceramic capacitors of values 1.0 µF or larger. X5R- and X7R-type capacitors are best because they have minimal variation in value and ESR over temperature. Maximum ESR should be < 1.0 Ω. OUTPUT NOISE In most LDO’s, the bandgap is the dominant noise source. To improve ac performance such as PSRR, output noise, and transient response, it is recommended that the board be designed with separate ground planes for VIN and VOUT, with each ground plane connected only at the GND pin of the device. In addition, the ground connection for the bypass capacitor should connect directly to the GND pin of the device. INTERNAL CURRENT LIMIT The TXS4555 internal current limit helps protect the regulator during fault conditions. During current limit, the output sources a fixed amount of current that is largely independent of output voltage. For reliable operation, the device should not be operated in a current limit state for extended periods of time. The PMOS pass element in the TXS4555 has a built-in body diode that conducts current when the voltage at VSIM exceeds the voltage at VBAT. This current is not limited, so if extended reverse voltage operation is anticipated, external limiting may be appropriate. DROPOUT VOLTAGE The TXS4555 uses a PMOS pass transistor to achieve low dropout. When (VBAT – VSIM) is less than the dropout voltage (VDO), the PMOS pass device is in its linear region of operation and the input-to-output resistance is the RDS(ON) of the PMOS pass element. VDO will approximately scale with output current because the PMOS device behaves like a resistor in dropout. STARTUP The TXS4555 uses a quick-start circuit which allows the combination of very low output noise and fast start-up times. Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TXS4555 9 TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com TRANSIENT RESPONSE As with any regulator, increasing the size of the output capacitor reduces over/undershoot magnitude but increases duration of the transient response. MINIMUM LOAD The TXS4555 is stable and well-behaved with no output load. Traditional PMOS LDO regulators suffer from lower loop gain at very light output loads. The TXS4555 employs an innovative low-current mode circuit to increase loop gain under very light or no-load conditions, resulting in improved output voltage regulation performance down to zero output current. THERMAL INFORMATION Thermal Protection Thermal protection disables the output when the junction temperature rises to approximately +160°C, allowing the device to cool. When the junction temperature cools to approximately +140°C the output circuitry is again enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the dissipation of the regulator, protecting it from damage because of overheating. Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate heat sink. For reliable operation, junction temperature should be limited to +125°C maximum. To estimate the margin of safety in a complete design (including heat sink), increase the ambient temperature until the thermal protection is triggered; use worst-case loads and signal conditions. For good reliability, thermal protection should trigger at least +35°C above the maximum expected ambient condition of your particular application. This configuration produces a worst-case junction temperature of +125°C at the highest expected ambient temperature and worst-case load. The internal protection circuitry of the TXS4555 has been designed to protect against overload conditions. It was not intended to replace proper heat sinking. Continuously running the TXS4555 into thermal shutdown will degrade device reliability. 10 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TXS4555 TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 REVISION HISTORY Changes from Revision A (March 2011) to Revision B Page • Removed Ordering Information table. ................................................................................................................................... 2 • Updated VIH and VIL to specify additional information. ......................................................................................................... 6 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TXS4555 11 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TXS4555RGTR ACTIVE VQFN RGT 16 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 ZUT TXS4555RUTR ACTIVE UQFN RUT 12 3000 RoHS & Green NIPDAUAG Level-1-260C-UNLIM -40 to 85 69R (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of