TXS4558
www.ti.com
SLLSE93A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011
Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO
Check for Samples: TXS4558
FEATURES
1
SIM2_CLK
SIM2_RST
SIM2_I/O
EN2
VSEL2
20
19
18
17
16
CLKRUN2
VCC
2
14
CLKRUN1
VBATT
3
13
CSEL
VSIM1
4
12
VSEL1
SIM1_CLK
5
11
En1
CLK 10
9
RST
GND
8
•
15
I/O
•
1
7
•
VSIM2
SIM1_I/O
•
RUK PACKAGE
(TOP VIEW)
6
•
Level Translator
– VCC Range of 1.65 V to 3.3 V
– VBATT Range of 2.3V to 5.5V
Low-Dropout (LDO) Regulator
– 50-mA LDO Regulator With Enable
– 1.8-V or 2.95-V Selectable Output Voltage
– Very Low Dropout: 100 mV (Max) at 50 mA
Control and Communication Through GPIO
Interface with Baseband Processor
Isolated Clock Stop Mode for both SIM1 and
SIM2 cards
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-B)
– 500-V Charged-Device Model (C101)
– 8kV HBM for SIM pins
Package
– 20-Pin QFN (3 mm x 3 mm)
SIM1_RST
•
NOTE: Exposed center thermal pad must be
electrically connected to Ground.
DESCRIPTION
The TXS4558 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications.
It is a custom device which is used to extend a single SIM/UICC interface to be able to support two
SIM’s/UICC’s.
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards.
It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces,
two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B
and 1.8-V Class-C interfaces. Simple GPIO inputs are used to switch between the two SIM cards and to put it
into different modes. The voltage-level translator has two supply voltage pins. VCC sets the reference for the
baseband interface and can be operated from 1.65 V to 3.3 V. VSIM1 and VSIM2 are programmed to either
1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input
battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or
Class-C SIM card.
The TXS4558 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification
for SIM cards. The device also has 8kV HBM protection for the SIM card pins and standard 2kV HBM protection
for all the other pins.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated
TXS4558
SLLSE93A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION (1)
PACKAGE (2)
TA
–40°C to 85°C
(1)
QFN – RUK
ORDERABLE PART NUMBER
TOP-SIDE MARKING
TXS4558RUKR
ZTG
Tape and reel
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
(2)
INTERFACING THE SIM CARD
VCC
VBATT
3V/1.8V SIM Card
3V or 1.8V, 50mA
Control I/P’s
LDO
Control
Logic
Baseband
Vcc
GND
RST
Vpp
CLK
I/O
NC
NC
RST
Translator
I/O
MUX
CLK
3V/1.8V SIM Card
3V or 1.8V, 50mA
LDO
Vcc
GND
RST
Vpp
CLK
I/O
NC
NC
Translator
PIN FUNCTIONS (1)
NO.
(1)
(2)
2
NAME
TYPE
(2)
POWER DOMAIN
DESCRIPTION
1
VSIM2
O
VBATT
1.8 V/2.95 V supply voltage to SIM2
2
VCC
P
—
1.8-V power supply for device operation and I/O buffers toward baseband
3
VBATT
P
—
Battery power supply
4
VSIM1
O
VBATT
1.8 V/2.95 V supply voltage to SIM1
5
SIM1CLK
O
VSIM1
SIM1 clock
6
SIM1RST
O
VSIM1
SIM1 reset
7
SIM1I/O
I/O
VSIM1
SIM1 data
8
I/O
I/O
VCC
UICC/SIM data
9
RST
I
VCC
UICC/SIM reset from baseband
10
CLK
I
VCC
UICC/SIM clock
11
EN1
I
VCC
Enable pin for SIM1 interface
12
VSEL1
I
VCC
Select pin for 1.8V or 2.95V LDO1 output
13
CSEL
I
VCC
Channel select between SIM1 or SIM2
Thermal Pad must be electrically connected to Ground Plane.
G = Ground, I = Input, O = Output, P = Power
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SLLSE93A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011
PIN FUNCTIONS(1) (continued)
NO.
TYPE (2)
NAME
POWER DOMAIN
DESCRIPTION
14
CLKRUN1
I
VCC
Select pin for SIM1 Clock stop mode
15
CLKRUN2
I
VCC
Select pin for SIM2 Clock stop mode
16
VSEL2
I
VCC
Select pin for 1.8V or 2.95V LDO2 output
17
EN2
I
VCC
Enable pin for SIM2 interface
18
SIM2I/O
I/O
VSIM2
SIM2 data
19
SIM2RST
O
VSIM2
SIM2 reset
20
SIM2CLK
O
VSIM2
SIM2 clock
TRUTH TABLE
CSEL
VSEL1
VSEL2
SELECTED CARD
VSIM1
VSIM2
0
0
0
1
1.8 V
1.8 V
0
0
1
1
1.8 V
2.95 V
0
1
0
1
2.95 V
1.8 V
0
1
1
1
2.95 V
2.95 V
1
0
0
2
1.8 V
1.8 V
1
0
1
2
1.8 V
2.95 V
1
1
0
2
2.95 V
1.8 V
1
1
1
2
2.95 V
2.95 V
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
LEVEL TRANSLATOR
VCC
VI
VO
VO
Supply voltage range
Input voltage range
Voltage range applied to any output in the high-impedance or
power-off state
Voltage range applied to any output in the high or low state
–0.3
4.0
VCC-port
–0.5
4.6
VSIMx-port
–0.5
4.6
Control inputs
–0.5
4.6
VCC-port
–0.5
4.6
VSIMx-port
–0.5
4.6
Control inputs
–0.5
4.6
VCC-port
–0.5
4.6
VSIMx-port
–0.5
4.6
Control inputs
–0.5
4.6
V
V
V
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
Continuous current through VCCA or GND
Tstg
±50
mA
±100
mA
Storage temperature range
–65
150
°C
Input voltage range
–0.3
6
V
LDO
VBAT
VOUT Output voltage range
–0.3
6
V
TJ
Junction temperature range
–55
150
°C
Tstg
Storage temperature range
–55
150
°C
2
kV
500
V
ESD rating (host side)
Human-Body Model (HBM)
Charged-Device Model (CDM)
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TXS4558
SLLSE93A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011
www.ti.com
RECOMMENDED OPERATING CONDITIONS (1)
MIN
MAX
UNIT
LEVEL TRANSLATOR
VCC
Supply voltage
VIH
VIL
High-level input voltage Applies to pins: EN1, EN2,RST, CLK, I/O, CLKRUN1,
Low-level input voltage CLKRUN2, VSEL1, VSEL2, CSEL
Δt/Δv
Input transition rise or fall rate
TA
Operating free-air temperature
(1)
1.7
3.3
V
VCC × 0.7
3.3
V
0
VCC × 0.3
–40
V
5
ns/V
85
°C
All unused data inputs of the device must be held at VCCI or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
ELECTRICAL CHARACTERISTICS — LEVEL TRANSLATOR
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
VSIM1
VSIM2
SIM1_RST
IOH = –100 µA, Push-Pull
SIM1_I/O
VSIM1 × 0.8
1.7 V to 3.3 V
IOH = –100 µA, Push-Pull
SIM2_CLK
1.8 V / 2.95 V,
(Supplied by LDO)
1.8 V / 2.95 V,
(Supplied by LDO)
VSIM2 × 0.8
V
VSIM2 × 0.8
SIM2_I/O
IOH = –10 µA, Open-Drain
VSIM2 × 0.8
I/O
IOH = –10 µA, Open-Drain
VCC × 0.8
SIM1_RST
VSIM1 × 0.2
IOL = 1 mA, Push-Pull
SIM1_CLK
SIM1_I/O
IOL = 1 mA, Push-Pull
SIM2_I/O
IOL = 1 mA, Open-Drain
I/O
IOL = 1 mA, Open-Drain
Control inputs
Cio
1.8 V / 2.95 V
(Supplied by LDO)
1.8 V / 2.95 V
(Supplied by LDO)
VSIM2 × 0.2
V
VSIM2 × 0.2
0.3
0.3
VI = EN1,EN2, CLKRUN1, CSEL,
CLKRUN2, VSEL1, VSEL2,
VI = VCCI, IO = 0
I/O
1.7 V to 3.3 V
1.8 V / 2.95 V
(Supplied by LDO)
1.8 V / 2.95 V
(Supplied by LDO)
±1
µA
1.7 V to 3.3 V
1.8 V / 2.95 V
(Supplied by LDO)
1.8 V / 2.95 V
(Supplied by LDO)
±5
µA
SIM_I/O port
8
VSIMx port
8
pF
Ci
(1)
0.3
1.7 V to 3.3 V
SIM2_CLK
ICC
VSIM1 × 0.2
IOL = 1 mA, Open-Drain
SIM2_RST
II
UNIT
VSIM1 × 0.8
IOH = –10 µA, Open-Drain
SIM2_RST
VOL
MAX
VSIM1 × 0.8
SIM1_CLK
VOH
TYP (1)
MIN
Control inputs
VI = VCC or GND
4
pF
All typical values are at TA = 25°C.
LDO ELECTRICAL CHARACTERISTICS
PARAMETER
VBAT
MIN TYP (1)
TEST CONDITIONS
Input voltage
VSIM1,2
Output voltage
VDO
Dropout voltage
2.3
2.85
2.95
3.05
Class-C Mode , 0 mA < ISIM1,2 < 50 mA
1.7
1.8
1.9
IOUT = 50 mA
100
VSIM1 = 2.95 V, VSIM2 = 0, ISIM1 = 0 µA
40
50
VSIM1 = 1.8 V, VSIM2 = 0, ISIM1 = 0 µA
40
50
Operating current
ISHDN
Shutdown current (IGND)
VENx ≤ 0.4 V, (VSIMx + VDO) ≤ VBAT ≤ 5.5 V, TJ = 85°C
IOUT(SC)
Short-circuit current
RL = 0 Ω
COUT
Output Capacitor
1
f = 1 kHz
50
f = 10 kHz
40
PSRR
Power-supply rejection ratio
VBAT = 3.15 V, VSIM1,2 = 1.8 V or 2.95 V,
COUT = 1 µF, IOUT = 10 mA
TSTR
VSIM1,2 Start-up time
VSIM1,2 = 1.8 V or 3 V, IOUT = 50 mA, COUT = 1 µF
TJ
Operating junction temperature
4
5.5
Class-B Mode , 0 mA < ISIM1,2 < 50 mA
IVBAT
(1)
MAX
–40
UNIT
V
V
mV
µA
µA
145
mA
1
µF
dB
400
µS
125
°C
All typical values are at TA = 25°C.
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Product Folder Link(s): TXS4558
TXS4558
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SLLSE93A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011
GENERAL ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
RI/OPU
I/O pull-up
RSIMPU
SIM_I/O pull-up
SIM enabled and selected with CSEL
SIM_I/O pull-down
Active pull-downs are connected to the VSIM regulator output to
the SIM_CLK, SIM_RST, SIM_I/O when EN = 0
RSIMPD
MIN
TYP
MAX
16
20
24
UNIT
kΩ
7.4
8.0
8.7
kΩ
2
kΩ
SWITCHING CHARACTERISTICS – VSIMx = 1.8 V or 2.95 V Supplied by Internal LDO
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
trA
trB
TEST CONDITIONS
VCC = 1.8 V ± 0.15 V
MIN
MAX
UNIT
I/O
1
µs
SIMx_RST
1
µs
50
ns
SIMx_CLK
CL = 50 pF
SIMx_I/O
fmax
SIMx_CLK
Duty Cycle
SIMx_CLK
40%
100
ns
25
MHz
60%
OPERATING CHARACTERISTICS
TA = 25°C, VSIMx = 1.8 V
PARAMETER
Cpd (1)
(1)
TEST CONDITIONS
Class C (CLK,
RST)
VCC-port input, VSIMx-port
output
Class B (CLK,
RST)
VCC-port input, VSIMx-port
output
CLASS C (IO)
VCC-port input, VSIMx-port
output
CLASS B (IO)
VCC-port input, VSIMx-port
output
TYP
UNIT
12.7
pF
CL = 0
f = 5 MHz
tr = tf = 1 ns
15.4
10.8
pF
20.3
Power dissipation capacitance per transceiver
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TXS4558
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PIN FUNCTION
PIN NAME
PIN NUMBER
PIN FUNCTION
VCC
2
Power supply and voltage reference for device operation and I/O buffers toward
baseband.
VBATT
3
This is the battery power supply for the TXS4558.
VSIM1, VSIM2
1,4
1.8 V/2.95 V supply voltage for the respective SIM1 and SIM2. These outputs are
activated through the EN1 and EN2 pins and set to be 1.8V or 2.95V through
VSEL1 and VSEL2.
SIMCLK, SIM2CLK
5, 20
These are voltage level shifted CLK signals for connection to SIM1 and SIM2.
Functionality while the corresponding SIM is not selected via CSEL is controlled by
CLKRUN1 and CLKRUN2 control pins.
SIM1RST, SIM2RST
6, 19
These are voltage level shifted RST signals for connection to SIM1 and SIM2.
Their output level when de-selected is latched at the last state.
SIM1IO, SIM2IO
7, 18
These are voltage level shifted IO signals for connection to SIM1 and SIM2. These
are bi-directional data signals.
IO
8
Microcontroller side data IO pin. The IO pin provides the bidirectional
communication path to the SIM cards. The SIMxIO communicating with IO is
selected by CSEL.
RST
9
Microcontroller side reset RST pin input. RST provides signals directly to the
selected SIM SIMxRST. When a SIM interface is deselected with CSEL, the last
RST value is held at the SIMxRST.
CLK
10
The CLK pin supplies the clock signal to the cards. It is level shifted and
transmitted directly to the SIMxCLK pin of the selected card. If CLKRUNx is HIGH,
the clock signal will be transmitted to the SIMxCLK pin, regardless of whether that
card is selected.
EN1, EN2
11, 17
EN1 and EN2 enable and disable the power supply to SIM1 and SIM2, and the
corresponding interface.
VSEL1, VSEL2
12, 16
These pins set the VSIM1 and VSIM2 voltages and the corresponding interface IO
voltages. When VSELx is low, VSIMx is 1.8V. When VSELx is high, VSIMx is
2.95V.
13
CSEL selects which SIM is activated and communicates with the baseband. When
CSEL is low, SIM1 is active. When CSEL is high, SIM2 is active.
14, 15
The CLKRUN1 and CLKRUN2 control the functionality of the SIM1CLK and
SIM2CLK pins when their corresponding SIM cards are deselected using CSEL.
When CLKRUNx is high, the CLK signal is transmitted to the corresponding
SIMxCLK, even when the card is deselected with CSEL. When CLKRUNx is low,
the SIMxCLK signal is brought low when the corresponding SIM is deselected with
CSEL.
CSEL
CLKRUN1, CLKRUN2
Exposed Center Pad
6
21
This center pad must be connected to ground.
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SLLSE93A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011
OPERATION
Clock Run Mode
SIMS have varying requirements for the SIM CLK. Using CLKRUN, the user can decide if the SIMxCLK pin
continuously transmits the CLK signal, or is brought low when the SIM is deselected with CSEL. If CLKRUNx is
LOW, the SIMxCLK is brought LOW two clock cycles after the SIMx is deselected with CSEL. If SIMxCLK is
high, the CLK transmits to the SIMxCLK, even if the SIMx is deselected with CSEL.
CSEL
When a channel is deselected using the CSEL pin, the SIMxRST state is latched, the SIMxIO becomes high
impedance and SIMxCLK function is dependent on CLKRUNx.
Operation Activation/Deactivation
When the EN1, EN2 pin is brought high, the device performs the activation sequence for the corresponding SIM
interface. Each SIM interface is activated independently based on its EN IO.
Activation Sequence
1. The device holds SIMxIO, SIMxCLK and SIMxRST low.
2. VSIMx is activated and powered.
3. The device waits for the VSIMx output to reach the correct voltage. Once this voltage is reached, SIMxIO,
and SIMxRST are enabled.
4. The SIMxCLK is activated on the 2nd rising edge after the SIMxIO is enabled.
When the ENx pin is brought low, the device performs the deactivation sequence for the corresponding SIM
interface. Deactivation Sequence,
Deactivation Sequence
1. SIMxRST is deactivated and set low.
2. Two clock cycles after EN is brought LOW, the SIMxCLK is disabled and brought LOW. If the CLK is not
active, SIMxCLK is disabled and brought low approximately 9us after ENx is brought low.
3. Approximately 9us after the ENx is brought LOW, SIMxIO is disabled and set LOW.
4. After SIMxIO is brought LOW, the VSIMx is deactivated and unpowered.
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TXS4558
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APPLICATION INFORMATION
The LDO’s included on the TXS4558 achieve ultra-wide bandwidth and high loop gain, resulting in extremely
high PSRR at very low headroom (VBAT – VSIM1/2). The TXS4558 provides fixed regulation at 1.8V or 2.95V. Low
noise, GPIO enable and low ground pin current make it ideal for portable applications. The device offers current
limit and thermal protection, and is fully specified from –40°C to 125°C.
VSIM1
VDDIO
TXS4558
VBAT
1 μF
GND
VSIM2
1μF
0.1μF
1 μF
Figure 1. Typical Application Circuit for TXS4558
Input and Output Capacitor Requirements
It is good analog design practice to connect a 1.0 µF low equivalent series resistance (ESR) capacitor across the
input supply (VBAT) near the regulator. Also, a 0.1µF is required for the logic core supply (VCC).
This capacitor will counteract reactive input sources and improve transient response, noise rejection, and ripple
rejection. A higher-value capacitor may be necessary if large, fast rise-time load transients are anticipated or if
the device is located several inches from the power source. The LDO’s are designed to be stable with standard
ceramic capacitors of values 1.0 µF or larger. X5R- and X7R-type capacitors are best because they have
minimal variation in value and ESR over temperature. Maximum ESR should be
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