CDBDSC3650-G

Silicon Carbide Power Schottky Diode CDBDSC3650-G Reverse Voltage: 650 V Forward Current: 3 A RoHS Device D-PAK(TO-252) Features 0.264(6.70) 0.256(6.50) 0.091(2.32) 0.089(2.28) 0.215(5.46) 0.023(0.58) 0.018(0.46) 0.201(5.10) 3 0.012(0.30) Max. Φ 0.244(6.20) 0.236(6.00) 0.409(10.40) 0.394(10.00) - Rated to 650V at 3 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.051(1.30) 0.043(1.10) 1 2 0.090(2.29) 0.035(0.89) Circuit Diagram 0.034(0.86) 0.026(0.66) 0.093(2.37) 0.085(2.16) C(3) C(1) 0.114(2.90) 0.100(2.55) 0.023(0.58) 0.016(0.43) Dimensions in inches and (millimeters) A(2) Maximum Ratings (at TA=25°C, unless otherwise noted) Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Surge peak reverse voltage VRSM 650 V DC bolcking voltage VDC 650 V Parameter Conditions Continuous forward current TC = 25°C TC = 135°C TC = 155°C Repetitive peak forward surge cruuent Non-repetitive peak forward surge current Power dissipation 5 3 A Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 IFRM 15 A Tc = 25°C, tp = 10ms Half sine wave IFSM 35 A Operating junction temperature range Storage temperature range 53.2 TC = 25°C TC = 110°C Typical thermal resistance 11 IF Junction to case PTOT W 23 RθJC 2.82 °C/W TJ -55 ~ +175 °C TSTG -55 ~ +175 °C Company reserves the right to improve product design , functions and reliability without notice. REV: Page 1 QW-BSCXX Comchip Technology CO., LTD. Silicon Carbide Power Schottky Diode Electrical Characteristics (at TA=25°C, unless otherwise noted) Parameter Symbol Conditions IF = 3A, Tj = 25°C Forward voltage VR = 650V, Tj = 25°C IR VR = 650V, Tj = 175°C VR = 400V, Tj = 150°C QC = ∫ C(V) dv Total capacitive charge QC VR Unit Max. Typ. VF IF = 3A, Tj = 175°C Reverse current Min. 1.4 1.7 1.8 2.5 10 100 20 200 V μA nC 11 0 VR = 0V, Tj = 25°C, f = 1MHZ Total capacitance VR = 200V, Tj = 25°C, f = 1MHZ C VR = 400V, Tj=25°C, f=1MHZ 181 220 22.5 25 20.5 21 pF RATING AND CHARACTERISTIC CURVES (CDBDSC3650-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 6 0.040 0.035 Reverse Current, IR (mA) Forward Current, IF (A) 5 TJ=25°C 4 TJ=75°C 3 TJ=125°C 2 TJ=175°C 1 0.025 TJ=75°C 0.020 TJ=125°C 0.015 TJ=175°C TJ=25°C 0.010 0.005 0 0 0 0.5 1.0 1.5 2.0 2.5 300 400 500 600 700 800 Fig.4 - Capacitance vs. Reverse Voltage Capacitance Between Terminals, CJ (pF) 10% Duty 25 20 30% Duty 15 50% Duty 10 70% Duty 50 200 Fig.3 - Current Derating 30 0 25 100 Reverse Voltage, VR (V) 35 5 0 Forward Voltage, VF (V) 40 Forward Current, IF (A) 0.030 DC 75 100 150 125 175 200 180 160 140 120 100 80 60 40 20 0 0.01 Case Tempature, TC (°C) 0.1 1 10 100 1000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV: Page 2 QW-BSCXX Comchip Technology CO., LTD.