0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MMBTA44-G

MMBTA44-G

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    SOT346

  • 描述:

    NPN TRANSISTOR 200MA 400V SOT-23

  • 数据手册
  • 价格&库存
MMBTA44-G 数据手册
General Purpose Transistor MMBTA44-G (NPN) RoHS Device Features - High Collector-emitter voltage. SOT-23 - Ultra small surface mount package. 1 : Base 2 : Emitter 3 : Collector 0.119(3.00) 0.110(2.80) Mechanical data 3 - Case: SOT-23 Standard package, molded plastic. 0.056(1.40) 0.047(1.20) 1 - Terminals: Solderable per MIL-STD-750, method 2026. 2 0.079(2.00) 0.071(1.80) - Mounting position: Any. 0.006(0.15) 0.003(0.08) - Weight: 0.0078 grams(approx.). 0.041(1.05) 0.035(0.90) 0.100(2.550) 0.089(2.250) 0.004(0.10) max Diagram: 0.020(0.50) 0.012(0.30) Collector 3 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) 1 Base 2 Emitter Maximum Ratings (at T =25°C unless otherwise noted) A Symbol Value Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 6 V Collector current-continuous IC 200 mA Collector current-pulsed ICM 300 mA Collector power dissipation PC 350 mW RΘJA 357 °C/W Junction temperature range TJ 150 °C Storage temperature range TSTG -55 to +150 °C Parameter Thermal resistance from junction to ambient Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR53 Page 1 Comchip Technology CO., LTD. General Purpose Transistor Electrical Characteristics (Ta=25°C, unless otherwise specified) Conditions Parameter Symbol Min Max Unit Collector-base breakdown voltage IC=100μA, IE=0 V(BR)CBO 400 V Collector-emitter breakdown voltage IC=1mA, IB=0 V(BR)CEO* 400 V Emitter-base breakdown voltage IE=10μA, IC=0 V(BR)EBO 6 V Collector cut-off current VCB=400V, IE=0 ICBO 0.1 μA Emitter cut-off current VEB=4V, IC=0 IEBO 0.1 μA VCE=10V, IC=1mA hFE(1)* 40 VCE=10V, IC=10mA hFE(2)* 50 VCE=10V, IC=50mA hFE(3)* 45 VCE=10V, IC=100mA hFE(4)* 40 200 DC current gain IC=1mA, IB=0.1mA VCE(sat)1* 0.4 V IC=10mA, IB=1mA VCE(sat)2* 0.5 V IC=50mA, IB=5mA VCE(sat)3* 0.75 V Base-emitter saturation voltage IC=10mA, IB=1mA VBE(sat)* 0.75 V Collector output capacitance VCB=20V, IE=0, f=1MHZ Cob 7 pF Emitter input capacitance VEB=0.5V, IC=0, f=1MHZ Cib 130 pF Collector-emitter saturation voltage *Pulse test: pulse width ≤300µs, duty cycle≤2.0% Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR53 Page 2 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBTA44-G) Fig.1 - Static Characteristic 16 72uA 12 64uA 56uA 10 VCE=10V Ta=25°C DC Current Gain, hFE Collector Current, Ic (mA) 1000 COMMON -500uA EMITTER -450uA 80uA 14 Fig.2 - hFE— IC 48uA 8 40uA 6 32uA 4 24uA Ta=100°C Ta= 25°C 100 16uA 2 IB=8uA 0 0 0 5 10 15 20 0.1 1 Fig.4 - VCEsat — IC Fig.3 - VBEsat — IC 1.0 300 Collector-Emitter Saturation Voltage 0.8 0.6 0.4 ß=10 100 Ta=100°C Ta= 25°C VCEsat (mV) VBEsat, (V) 0.2 0 10 0 1 100 10 Collector Current, Ic (mA) Collector Current , Ic (mA) Fig. 5 - Cob/Cib — VCB/VEB Fig.6 - PC — Ta 500 f=1MHZ IE=0/IC=0 Ta=25°C Cib 100 Cob 10 0 0.1 1 100 10 1 10 20 Collector Power Dissipation, Pc (mW) BASE-Emitter Saturation Voltage ß=10 Capacitance, C ( pF) 100 10 Collector Current , Ic (mA) Collector-Emitter Voltage, VCE (V) 400 350 300 250 200 150 100 50 0 0 Reverse Voltge , V ( V ) 25 50 75 100 125 150 Ambient Temperature , Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR53 Page 3 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification P1 F E d P0 B XX 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 / - 0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 / - 0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR53 Page 4 Comchip Technology CO., LTD. General Purpose Transistor Marking Code Part Number Marking Code MMBTA44-G 3D 3 3D 1 2 Suggested PAD Layout A SOT-23 SIZE (mm) (inch) A 0.60 0.024 B 0.80 0.031 C 1.90 0.075 D 2.02 0.080 E 2.82 0.111 B D E C Standard Packaging Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Case Type SOT-23 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR53 Page 5 Comchip Technology CO., LTD.
MMBTA44-G 价格&库存

很抱歉,暂时无法提供与“MMBTA44-G”相匹配的价格&库存,您可以联系我们找货

免费人工找货