| H5784-06 | HAMAMATSU[HamamatsuCorporation] | H5784-06 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5784-01 | HAMAMATSU[HamamatsuCorporation] | H5784-01 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5783P-01 | HAMAMATSU[HamamatsuCorporation] | H5783P-01 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5773P-06 | HAMAMATSU[HamamatsuCorporation] | H5773P-06 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5773-06 | HAMAMATSU[HamamatsuCorporation] | H5773-06 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5773-01 | HAMAMATSU[HamamatsuCorporation] | H5773-01 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| S1336-44BK | HAMAMATSU[HamamatsuCorporation] | S1336-44BK - Si photodiode UV to near IR for precision photometry - Hamamatsu Corporation | | | 获取价格 |
| S1226-8BQ | HAMAMATSU[HamamatsuCorporation] | S1226-8BQ - Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity - Hamamatsu Corporation | | | 获取价格 |
| S1226-5BK | HAMAMATSU[HamamatsuCorporation] | S1226-5BK - Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity - Hamamatsu Corporation | | | 获取价格 |
| S1226 | HAMAMATSU[HamamatsuCorporation] | S1226 - SI PHOTO DIODE - Hamamatsu Corporation | | | 获取价格 |
| S11510 | HAMAMATSU[HamamatsuCorporation] | S11510 - Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) - Hamamatsu Corporation | | | 获取价格 |
| S11499 | HAMAMATSU[HamamatsuCorporation] | S11499 - Large area, enhanced near IR sensitivity, using a MEMS technology - Hamamatsu Corporation | | | 获取价格 |
| C10508 | HAMAMATSU[HamamatsuCorporation] | C10508 - Variable gain and stable detection even at high gains - Hamamatsu Corporation | | | 获取价格 |
| G4176 | HAMAMATSU[HamamatsuCorporation] | G4176 - ULTRAFAST MSM PHOTODETECTORS - Hamamatsu Corporation | | | 获取价格 |
| S1087-01 | HAMAMATSU[HamamatsuCorporation] | S1087-01 - Si photodiode - Hamamatsu Corporation | | | 获取价格 |
| S10814 | HAMAMATSU[HamamatsuCorporation] | S10814 - Front-illuminated FFT-CCD for X-ray imaging - Hamamatsu Corporation | | | 获取价格 |
| S10141-1008S | HAMAMATSU[HamamatsuCorporation] | S10141-1008S - CCD area image sensor Low readout noise, high resolution (pixel size: 12 μm) - Hamamatsu Corporation | | | 获取价格 |
| S10114-256Q | HAMAMATSU[HamamatsuCorporation] | S10114-256Q - Current-output type sensors with variable integration time function - Hamamatsu Corporation | | | 获取价格 |
| S10114-1024Q | HAMAMATSU[HamamatsuCorporation] | S10114-1024Q - Current-output type sensors with variable integration time function - Hamamatsu Corporation | | | 获取价格 |
| S10113-512Q | HAMAMATSU[HamamatsuCorporation] | S10113-512Q - Current-output type sensors with variable integration time function - Hamamatsu Corporation | | | 获取价格 |
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