IPT0408-35A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-35A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPT0408-25F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-25F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPT0408-18F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-18F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPT0408-10A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPT0406-50F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-50F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPT0406-35A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-35A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPT0406-10D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-10D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPT0406-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS825-40A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS825-40A - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS812-15B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS812-15B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS620-30F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS620-30F - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS616-25B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS616-25B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS604-06D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-06D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
IPS6008-03U | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS6008-03U - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
CRSS046N08N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):85V;连续漏极电流(Id):120A;功率(Pd):189W;导通电阻(RDS(on)@Vgs,Id):4.6mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
CS7N70A4R-G | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):700V;连续漏极电流(Id):7A;功率(Pd):120W;导通电阻(RDS(on)@Vgs,Id):1.15Ω@10V,3.5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
CS4N60A7HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):30W;导通电阻(RDS(on)@Vgs,Id):2.3Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
CS3818EO | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
CS25N10A4 | Wuxi China Resources Microelectronics Limited | MOSFETs N-Channel Vdss=100V Id=25A Pd=56.8W | | | 获取价格 |
CRTD063N04L | Wuxi China Resources Microelectronics Limited | CRTD063N04L | | | 获取价格 |