| IPT0806-SEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-SEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-SEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-SEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-CEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-BEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-BEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-10A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-AEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-AEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-AEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-AEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-TEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-SEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-DED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-DED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-AEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-AEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-35I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-35I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-35B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-35B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-18F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-18F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-10I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-10I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0108-XXU | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0108-XXU - suitable for low power AC Switching application - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS816-25B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS816-25B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS608-05I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS608-05I - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
