| BSS87,115 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):400mA;功率(Pd):580mW;导通电阻(RDS(on)@Vgs,Id):3Ω@10V,400mA;阈值电压(Vgs(th)@Id):2.8V@1mA; | | | 获取价格 |
| BCX52-16TF | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):1A;功率(Pd):500mW;集电极截止电流(Icbo):100nA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):500mV@500mA,50mA;直流电流增益(hFE@Ic,Vce):100@150mA,2V;特征频率(fT):140MHz;工作温度:+150℃@(Tj); | | | 获取价格 |
| PBSS5360XF | Rubycon Corporation | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;特征频率(fT):-; | | | 获取价格 |
| PBSS305NX,115 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):80V;集电极电流(Ic):4.6A;功率(Pd):600mW;直流电流增益(hFE@Ic,Vce):180@2A,2V; | | | 获取价格 |
| BCX52-10,115 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):1A;功率(Pd):500mW;直流电流增益(hFE@Ic,Vce):63@150mA,2V; | | | 获取价格 |
| BCX53-16TF | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):1A;功率(Pd):500mW;直流电流增益(hFE@Ic,Vce):100@150mA,2V; | | | 获取价格 |
| BCX56-16,135 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):80V;集电极电流(Ic):1A;功率(Pd):500mW;直流电流增益(hFE@Ic,Vce):100@150mA,2V; | | | 获取价格 |
| BSR31,115 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):1A;功率(Pd):1.35W;直流电流增益(hFE@Ic,Vce):100@100mA,5V; | | | 获取价格 |
| PBHV9115X,115 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):150V;集电极电流(Ic):1A;功率(Pd):520mW;直流电流增益(hFE@Ic,Vce):100@100mA,10V; | | | 获取价格 |
| PXTA92,115 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):300V;集电极电流(Ic):100mA;功率(Pd):1.3W;直流电流增益(hFE@Ic,Vce):25@30mA,10V; | | | 获取价格 |
| BCP56TX | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):80V;集电极电流(Ic):1A;功率(Pd):600mW;直流电流增益(hFE@Ic,Vce):63@150mA,2V; | | | 获取价格 |
| PDTC143ET,215 | Rubycon Corporation | 1 NPN - Pre Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | | | 获取价格 |
| PDTA114ET,215 | Rubycon Corporation | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | | | 获取价格 |
| BCV47,215 | Rubycon Corporation | 类型:NPN;集射极击穿电压(Vceo):60V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Vce,Ic):10000@5V,100mA; | | | 获取价格 |
| PDTA123ET,215 | Rubycon Corporation | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | | | 获取价格 |
| CJK1508 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):15V;连续漏极电流(Id):8A;功率(Pd):500mW;导通电阻(RDS(on)@Vgs,Id):7.7mΩ@10V,3A; | | | 获取价格 |
| PDTC114TT,215 | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直流电流增益(hFE@Ic,Vce):200@1mA,5V; | | | 获取价格 |
| PDTA114TT,215 | Rubycon Corporation | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电流增益(hFE@Ic,Vce):200@1mA,5V; | | | 获取价格 |
| PDTD143ETR | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):460mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电流增益(hFE@Ic,Vce):60@50mA,5V; | | | 获取价格 |
| PDTA115ET,215 | Rubycon Corporation | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-; | | | 获取价格 |
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