| PDTC114YT,215 | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V; | | | 获取价格 |
| PDTB123YT,215 | Rubycon Corporation | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V; | | | 获取价格 |
| PDTA114YT,215 | Rubycon Corporation | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;直流电流增益(hFE@Ic,Vce):-;特征频率(fT):-; | | | 获取价格 |
| PMBTA64,215 | Rubycon Corporation | 30V 20000@5V,100mA PNP 125MHz 100nA 500mA 250mW +150℃@(Tj) 1.5V@100mA,100uA SOT-23 Darlington Transistors ROHS | | | 获取价格 |
| PMBTA13,215 | Rubycon Corporation | 10000@5V,100mA 30V NPN 125MHz 100nA 500mA 250mW +150℃@(Tj) 1.5V@100mA,100uA SOT-23 Darlington Transistors ROHS | | | 获取价格 |
| CJK3400AH | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.8A;功率(Pd):450mW;导通电阻(RDS(on)@Vgs,Id):19mΩ@10V,5.8A; | | | 获取价格 |
| PDTA143XT,215 | Rubycon Corporation | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电流增益(hFE@Ic,Vce):50@10mA,5V; | | | 获取价格 |
| PDTC124XT,215 | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直流电流增益(hFE@Ic,Vce):80@5mA,5V; | | | 获取价格 |
| 2N7002BKVL | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):350mA;功率(Pd):370mW;导通电阻(RDS(on)@Vgs,Id):1Ω@10V,500mA; | | | 获取价格 |
| 2N7002NXAKR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):190mA；300mA;功率(Pd):265mW；1.33W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@100mA,10V; | | | 获取价格 |
| PDTC144VT,215 | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直流电流增益(hFE@Ic,Vce):40@5mA,5V; | | | 获取价格 |
| BC807-40,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):250@100mA,1V; | | | 获取价格 |
| BC817-40,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):250@100mA,1V; | | | 获取价格 |
| BC857C,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):420@2mA,5V; | | | 获取价格 |
| BC817-16,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@100mA,1V; | | | 获取价格 |
| PBSS5140T,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):1A;功率(Pd):450mW;直流电流增益(hFE@Ic,Vce):300@100mA,5V; | | | 获取价格 |
| BSR16,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@150mA,10V; | | | 获取价格 |
| PMBT2907A,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@150mA,10V; | | | 获取价格 |
| BC848B,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2mA,5V; | | | 获取价格 |
| BFS19,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):20V;集电极电流(Ic):30mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):65@1mA,10V; | | | 获取价格 |
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