| BC337 | SIEMENS[SiemensSemiconductorGroup] | BC337 - NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) - Siemens Semiconductor Group | | | 获取价格 |
| BBY58-03W | SIEMENS[SiemensSemiconductorGroup] | BBY58-03W - Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) - Siemens Semiconductor Group | | | 获取价格 |
| BBY51-02W | SIEMENS[SiemensSemiconductorGroup] | BBY51-02W - Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) - Siemens Semiconductor Group | | | 获取价格 |
| BAT70-05 | SIEMENS[SiemensSemiconductorGroup] | BAT70-05 - Silicon Schottky Diodes (Parallel connection for maximum IF per package Low forward voltage drop For power supply) - Siemens Semiconductor Group | | | 获取价格 |
| BAT64-07W | SIEMENS[SiemensSemiconductorGroup] | BAT64-07W - Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) - Siemens Semiconductor Group | | | 获取价格 |
| BAT62-02W | SIEMENS[SiemensSemiconductorGroup] | BAT62-02W - Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) - Siemens Semiconductor Group | | | 获取价格 |
| B25667-A4307-A375 | SIEMENS[SiemensSemiconductorGroup] | B25667-A4307-A375 - Compact design Enhanced inrush current withstand capability - Siemens Semiconductor Group | | | 获取价格 |
| B25667-A4187-A375 | SIEMENS[SiemensSemiconductorGroup] | B25667-A4187-A375 - Compact design Enhanced inrush current withstand capability - Siemens Semiconductor Group | | | 获取价格 |
| B25667-A4127-A375 | SIEMENS[SiemensSemiconductorGroup] | B25667-A4127-A375 - Compact design Enhanced inrush current withstand capability - Siemens Semiconductor Group | | | 获取价格 |
| B25667-A3337-A375 | SIEMENS[SiemensSemiconductorGroup] | B25667-A3337-A375 - Compact design Enhanced inrush current withstand capability - Siemens Semiconductor Group | | | 获取价格 |
| B25667-A3147-A375 | SIEMENS[SiemensSemiconductorGroup] | B25667-A3147-A375 - Compact design Enhanced inrush current withstand capability - Siemens Semiconductor Group | | | 获取价格 |
| B25667-A3147-A175 | SIEMENS[SiemensSemiconductorGroup] | B25667-A3147-A175 - Compact design Enhanced inrush current withstand capability - Siemens Semiconductor Group | | | 获取价格 |
| B25667-A3107-A175 | SIEMENS[SiemensSemiconductorGroup] | B25667-A3107-A175 - Compact design Enhanced inrush current withstand capability - Siemens Semiconductor Group | | | 获取价格 |
| BAT15-063P | SIEMENS[SiemensSemiconductorGroup] | BAT15-063P - HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) - Siemens Semiconductor Group | | | 获取价格 |
| BAT15-044H | SIEMENS[SiemensSemiconductorGroup] | BAT15-044H - HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) - Siemens Semiconductor Group | | | 获取价格 |
| BAT15-013H | SIEMENS[SiemensSemiconductorGroup] | BAT15-013H - HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) - Siemens Semiconductor Group | | | 获取价格 |
| BAS70 | SIEMENS[SiemensSemiconductorGroup] | BAS70 - HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching) - Siemens Semiconductor Group | | | 获取价格 |
| B57164-K152 | SIEMENS[SiemensSemiconductorGroup] | B57164-K152 - Temperaturmessung Bedrahtete Scheiben - Siemens Semiconductor Group | | | 获取价格 |
| 3RH2911-1BA01 | Siemens Ltd | 3RH2911-1BA01 | | | 获取价格 |
| PSB4500-T | SIEMENS[SiemensSemiconductorGroup] | PSB4500-T - Standard Speech Circuit - Siemens Semiconductor Group | | | 获取价格 |
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