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型号厂商描述数据手册替代料参考价格
TL1451_08UTC[UnisonicTechnologies] TL1451_08 - DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS - Unisonic Technologies获取价格
TL1451L-P16-RUTC[UnisonicTechnologies] TL1451L-P16-R - DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS - Unisonic Technologies获取价格
TL1451-D16-TUTC[UnisonicTechnologies] TL1451-D16-T - DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS - Unisonic Technologies获取价格
TL082L-S08-RUTC[UnisonicTechnologies] TL082L-S08-R - GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER - Unisonic Technologies获取价格
TL082-P08-RUTC[UnisonicTechnologies] TL082-P08-R - GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER - Unisonic Technologies获取价格
TL082-D08-TUTC[UnisonicTechnologies] TL082-D08-T - GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER - Unisonic Technologies获取价格
TL082UTC[UnisonicTechnologies] TL082 - GENERAL PURPOSE DUAL J-FET OPERATION AMPLIFIER - Unisonic Technologies获取价格
R25LD10-TN5-TUTC[UnisonicTechnologies] R25LD10-TN5-T - LOW VOLTAGE OPERATION LOW POWER-LOSS VOLTAGE REGULATORS - Unisonic Technologies获取价格
R25LD10-TF4-RUTC[UnisonicTechnologies] R25LD10-TF4-R - LOW VOLTAGE OPERATION LOW POWER-LOSS VOLTAGE REGULATORS - Unisonic Technologies获取价格
TL074L-S14-RUTC[UnisonicTechnologies] TL074L-S14-R - LOW NOISE QUAD J-FET OPERATIONAL AMPLIFIER - Unisonic Technologies获取价格
TL072L-P08-RUTC[UnisonicTechnologies] TL072L-P08-R - LOW NOISE DUAL J-FET OPERATIONAL AMPLIFIER - Unisonic Technologies获取价格
TL062L-D08-TUTC[UnisonicTechnologies] TL062L-D08-T - LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER - Unisonic Technologies获取价格
TL062G-S08-RUTC[UnisonicTechnologies] TL062G-S08-R - LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER - Unisonic Technologies获取价格
TL062-D08-TUTC[UnisonicTechnologies] TL062-D08-T - LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER - Unisonic Technologies获取价格
MCR100G-8-ADUnisonic Technology Co., Ltd.获取价格
UF640G-TN3-RUnisonic Technology Co., Ltd.获取价格
2SC5353BL-TN3-RUnisonic Technology Co., Ltd.晶体管类型:NPN;集射极击穿电压(Vceo):750V;集电极电流(Ic):3A;功率(Pd):22W;集电极截止电流(Icbo):100μA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):1V@1.2A,240mA;直流电流增益(hFE@Ic,Vce):-;特征频率(fT):-;工作温度:+150℃@(Tj);获取价格
2SC3356G-B-AE2-RUnisonic Technology Co., Ltd.晶体管类型:NPN;集射极击穿电压(Vceo):12V;集电极电流(Ic):100mA;功率(Pd):200mW;集电极截止电流(Icbo):1uA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;直流电流增益(hFE@Ic,Vce):160@20mA,10V;特征频率(fT):7GHz;工作温度:+150℃@(Tj);获取价格
DTA114EL-T92-KUnisonic Technology Co., Ltd.晶体管类型:1个PNP-预偏置;功率(Pd):625mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):-;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@10mA,300mV;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):500mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,500uA;直流电流增益(hFE@Ic,Vce):30@5mA,5获取价格
TIP32CL-TA3-TUnisonic Technology Co., Ltd.晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):3A;功率(Pd):2W;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):1.2V@3A,375mA;直流电流增益(hFE@Ic,Vce):10@3A,4V;特征频率(fT):3MHz;工作温度:+150℃@(Tj);获取价格