AIMW120R035M1HXKSA1

AIMW120R035M1H AIMW120R035M1H CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET Drain pin 2 Features • • • • • • • • • Gate pin 1 Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (18V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, VGS(th)=4.5V Fully controllable dv/dt Commutation robust body diode, ready for synchronous rectification Temperature independent turn-off switching losses Source pin 3 Benefits • • • • • 1 Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost 2 3 Potential Applications • • On-board Charger/PFC Booster/DC-DC Converter Product validation Qualified for Automotive Applications. Product Validation according to AEC-Q100/101 Table 1 Key Performance and Package Parameters Type AIMW120R035M1H Datasheet www.infineon.com VDS 1200V ID (TC=25°C, Rth(j-c,max)) 52A RDS(on),typ (Tvj = 25°C, ID = 25A, Tvjmax Marking Package 35mΩ 175°C A120M1035 PG-TO247-3-41 VGS = 18V) Please read the Important Notice and Warnings at the end of this document page 1 of 17 v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Table of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 3.1 3.2 3.3 Electrical Characteristics ........................................................................................................ 5 Static characteristics ............................................................................................................................... 5 Dynamic characteristics .......................................................................................................................... 6 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing ................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Datasheet 2 of 17 v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Maximum ratings 1 Maximum ratings Table 2 Maximum ratings1 Parameter Symbol Value Unit Drain-source voltage, Tvj ≥ 25°C VDSS 1200 V DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 25°C TC = 100°C ID 52 41 A Pulsed drain current, tp limited by Tvjmax, VGS = 18V ID,pulse1 130 A DC body diode forward current for Rth(j-c,max), limited by Tvjmax, VGS = 0V TC = 25°C TC = 100°C ISD Pulsed body diode current, tp limited by Tvjmax ISD,pulse1 68 Gate-source voltage2 Max transient voltage, < 1% duty cycle Recommended turn-on gate voltage Recommended turn-off gate voltage VGS VGS,on VGS,off -7… 23 18 0 Power dissipation, limited by Tvjmax TC = 25°C TC = 100°C Ptot 228 114 W Virtual junction temperature Tvj -55… 175 °C Storage temperature Tstg -55… 150 °C Soldering temperature, wave soldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Tsold 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm 52 34 A A V Not subject to production test. Parameter verified by design/characterization. Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. 1 2 Datasheet 3 of 17 v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Thermal resistances 2 Thermal resistances Table 3 Thermal resistances1 Parameter Symbol MOSFET/body diode thermal resistance, junction – case Rth(j-c) Value Conditions Unit min. typ. max. - 0.51 0.66 K/W 62 K/W Thermal resistance, leaded Rth(j-a) junction – ambient 1 Not subject to production test. Parameter verified by design/characterization. Datasheet 4 of 17 v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static characteristics Table 4 Static characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Conditions Value Drain-source on-state resistance2 RDS(on) VGS = 18V, ID = 25A, Body diode forward voltage VSD Tvj = 25°C Tvj = 100°C Tvj = 175°C VGS = 0V, ISD = 25A Tvj = 25°C Tvj = 100°C Tvj = 175°C Gate-source threshold voltage VGS(th) Unit min. typ. max. - 35 44 66 46 - - 3.8 3.7 3.6 5.2 - (tested after 1 ms pulse at VGS = 20V) ID = 10mA, VDS = VGS mΩ V V Tvj = 25°C Tvj =175°C 3.5 - 4.5 3.6 5.7 - VGS = 0V, VDS = 1200V Tvj = 25°C Tvj = 175°C - 2 50 200 - µA VGS = 23V, VDS = 0V - - 120 nA VGS = -7V, VDS = 0V - - -120 nA Zero gate voltage drain current IDSS Gate-source leakage current IGSS Transconductance gfs VDS = 20V, ID = 25A - 11.1 - S Internal gate resistance RG,int f = 1MHz, VAC = 25mV - 4.5 - Ω Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. 2 Datasheet 5 of 17 v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.2 Dynamic characteristics Table 5 Dynamic characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse capacitance Crss Coss stored energy Eoss Total gate charge QG Gate to source charge QGS,pl Gate to drain charge Datasheet QGD Value Conditions VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV VDD = 800V, ID = 25A, VGS = 0/18V, turn-on pulse 6 of 17 min. typ. max. - 2130 - - 107 - - 11 - - - - 44 59 - 19 - - 13 - Unit pF µJ nC v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.3 Switching characteristics Table 6 Switching characteristics, Inductive load 4 Parameter Symbol Conditions Value Unit min. typ. max. MOSFET Characteristics, Tvj = 25°C Turn-on delay time td(on) VDD = 800V, ID = 25A, - 12 - Rise time tr - 25 - Turn-off delay time td(off) - 22 - Fall time tf - 13 - Turn-on energy Eon - 417 - Turn-off energy Eoff VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E - 147 - Total switching energy Etot - 564 - VDD = 800V, ISD = 25A, VGS at diode = 0V, dif/dt = 1000A/µs, - 140 - nC Qrr includes also QC , see Fig. C - 10 - A ns µJ Body Diode Characteristics, Tvj = 25°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm MOSFET Characteristics, Tvj = 175°C Turn-on delay time td(on) VDD = 800V, ID = 25A, - 12 - Rise time tr - 31 - Turn-off delay time td(off) - 24 - Fall time tf - 14 - Turn-on energy Eon - 700 - Turn-off energy Eoff VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E - 161 - Total switching energy Etot - 861 - VDD = 800V, ISD = 25A, VGS at diode = 0V, dif/dt = 1000A/µs, - 550 - nC Qrr includes also QC , see Fig. C - 15 - A ns µJ Body Diode Characteristics, Tvj = 175°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. 4 Datasheet 7 of 17 v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 4 Electrical characteristic diagrams 250 140 120 not for linear use 150 Ptot [W] IDS [A] 100 Rth(j-c,max) Rth(j-c,typ) 200 80 60 100 40 50 20 0 0 800 VDS [V] 0 1200 Safe operating area (SOA) (VGS = 0/18V, Tc = 25°C, Tj ≤ 175°C) 0 Figure 2 60 60 50 50 40 40 Rth(j-c,max) Rth(j-c,typ) 30 IDS [A] IDS [A] Figure 1 400 20 10 10 0 Datasheet 75 100 125 150 175 TC [ C] Rth(j-c,max) Rth(j-c,typ) 0 0 Figure 3 50 Power dissipation as a function of case temperature limited by bond wire (Ptot = f(TC)) 30 20 25 25 50 75 100 125 150 175 TC [ C] 0 Maximum DC drain to source current as Figure 4 a function of case temperature limited by bond wire (IDS = f(TC)) 8 of 17 25 50 75 100 125 150 175 TC [ C] Maximum source to drain current as a function of case temperature limited by bond wire (ISD = f(TC), VGS = 0V) v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 150 6 25 C 125 5 175 C VGS (th) [V] IDS [A] 100 75 3 50 2 25 1 0 0 0 4 8 VGS Figure 5 125 100 75 12 16 -40 20 Typical transfer characteristic (IDS = f(VGS), VDS = 20V, tP = 20µs) Figure 6 100 20V 18V 16V 15V 14V 12V 10V 8V 6V 80 50 0 0 Datasheet 60 60 110 Tvj [ C] 160 Typical gate-source threshold voltage as a function of junction temperature (VGS(th) = f(Tvj), IDS = 10mA, VGS = VDS) 20V 18V 16V 15V 14V 12V 10V 8V 6V 40 20 25 Figure 7 10 [V] IDS [A] 150 IDS [A] 4 5 10 VDS [V] 15 0 20 Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=25°C, tP = 20µs) 0 Figure 8 9 of 17 4 8 12 VDS [V] 16 20 Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=175°C, tP = 20µs) v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 18 100 16 14 VGS = 18V 12 60 VGS [V] RDS (ON) [mOhm] 80 40 10 8 6 4 20 2 0 -40 Figure 9 0 40 80 Tvj [ C] 120 0 160 0 Typical on-resistance as a function of junction temperature (RDS(on) = f(Tvj), IDS = 25A) Figure 10 10000 10 20 30 40 QG [nC] 50 60 Typical gate charge (VGS = f(QG), IDS = 25A, VDS = 800V, turn-on pulse) 6 5 1000 VSD [V] C [pF] 4 100 3 2 Ciss 10 1 Coss Crss 1 0 1 10 100 1000 -50 VDS[V] Figure 11 Datasheet Typical capacitance as a function of drain-source voltage (C = f(VDS), VGS = 0V, f = 1MHz) Figure 12 10 of 17 0 50 100 Tj [ C] 150 200 Typical body diode forward voltage as function of junction temperature (VSD=f(Tvj), VGS=0V, ISD=25A) v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 60 60 50 40 VGS=18V 30 VGS=18V ISD [A] ISD [A] 40 20 20 VGS=0V VGS=0V 10 0 0 0 0 Figure 13 1,000 1 2 3 4 VSD [V] 5 6 1 2 3 4 VSD [V] 5 6 Figure 14 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD = f(VSD), Tvj = 175°C, tP = 20µs) Figure 16 Typical switching energy losses as a function of drain-source current (E = f(IDS), VDD = 800V, VGS = 0V/18V, RG,ext = 2Ω, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) Typical body diode forward current as function of forward voltage, VGS as parameter (ISD = f(VSD), Tvj = 25°C, tP = 20µs) Etot Eon 800 E [µJ] Eoff 600 400 200 0 25 75 125 175 Tvj [ C] Figure 15 Datasheet Typical switching energy losses as a function of junction temperature (E = f(Tvj), VDD = 800V, VGS = 0V/18V, RG,ext = 2Ω, ID = 25A, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) 11 of 17 v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 3000 Etot Eon Eoff E [µJ] 2000 1000 0 0 20 40 RG,ext [Ohm] 60 Figure 17 Typical switching energy losses as a function of gate resistance (E = f(RG,ext), VDD = 800V, VGS = 0V/18V, ID = 25A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) Figure 18 Typical switching times as a function of gate resistor (t = f(RG,ext), VDD = 800V, VGS = 0V/18V, ID = 25A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) Figure 19 Typical reverse recovery charge as a function of diode current slope (Qrr = f(dif/dt), VDD = 800V, VGS = 0V/18V, ID = 25A, ind. load, test circuit in Fig.E, body diode at VGS = 0V) Figure 20 Typical reverse recovery current as a function of diode current slope (Irrm = f(dif/dt), VDD = 800V, VGS = 0V/18V, ID = 25A, ind. load, test circuit in Fig.E, body diode at VGS = 0V) Datasheet 12 of 17 v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 21 Datasheet Max. transient thermal resistance (MOSFET/diode) (Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D) 13 of 17 v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Package drawing 5 Package drawing PG-TO247-3-41 Figure 22 Datasheet Package drawing 14 of 17 v01_10 2023-01-16 AIMW120R035M1H CoolSiC™ 1200V SiC Trench MOSFET Test conditions 6 Test conditions 2% Figure 23 Datasheet Test conditions 15 of 17 v01_10 2023-01-16 AIMW120R035M1H 1200V SiC Trench MOSFET Revision history Revision history Document version Date of release Description of changes V01_00 V01_10 2021-03-09 ISD,pulse value adjusted Datasheet 2023-01-16 16 of 17 v01_10 2023-01-16 Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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