AIMW120R080M1XKSA1

AIMW120R080M1 AIMW120R080M1 CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET Drain pin 2 Features • • • • • • • • • Gate pin 1 Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, VGS(th)=4.5V Fully controllable dv/dt Commutation robust body diode, ready for synchronous rectification Temperature independent turn-off switching losses Source pin 3 Benefits • • • • • 1 Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost 2 3 Potential Applications • • On-board Charger/PFC Booster/DC-DC Converter Product validation Qualified for Automotive Applications. Product Validation according to AEC-Q100/101 Table 1 Key Performance and Package Parameters Type AIMW120R080M1 Datasheet www.infineon.com VDS 1200V ID (TC=25°C, Rth(j-c,max)) 33A RDS(on),typ (Tvj = 25°C, ID = 13A, Tvjmax Marking Package 80mΩ 175°C A120M1080 PG-TO247-3-41 VGS = 15V) Please read the Important Notice and Warnings at the end of this document page 1 of 17 v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Table of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 3.1 3.2 3.3 Electrical Characteristics ........................................................................................................ 5 Static characteristics ............................................................................................................................... 5 Dynamic characteristics .......................................................................................................................... 6 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing ................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Datasheet 2 of 17 v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Maximum ratings 1 Maximum ratings Table 2 Maximum ratings1 Parameter Symbol Value Unit Drain-source voltage, Tvj ≥ 25°C VDSS 1200 V DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 15V, TC = 25°C TC = 100°C ID 33 24 A Pulsed drain current, tp limited by Tvjmax, VGS = 15V ID,pulse1 74 A DC body diode forward current for Rth(j-c,max), limited by Tvjmax, VGS = 0V TC = 25°C TC = 100°C ISD Pulsed body diode current, tp limited by Tvjmax ISD,pulse1 38 Gate-source voltage2 Max transient voltage, < 1% duty cycle Recommended turn-on gate voltage Recommended turn-off gate voltage VGS VGS,on VGS,off -7… 20 15 0 Power dissipation, limited by Tvjmax TC = 25°C TC = 100°C Ptot 150 75 W Virtual junction temperature Tvj -55… 175 °C Storage temperature Tstg -55… 150 °C Soldering temperature, wave soldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Tsold 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm 36 22 A A V Not subject to production test. Parameter verified by design/characterization. Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. 1 2 Datasheet 3 of 17 v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Thermal resistances 2 Thermal resistances Table 3 Thermal resistances1 Parameter Symbol MOSFET/body diode thermal resistance, junction – case Rth(j-c) Value Conditions Unit min. typ. max. - 0.8 1 K/W 62 K/W Thermal resistance, leaded Rth(j-a) junction – ambient 1 Not subject to production test. Parameter verified by design/characterization. Datasheet 4 of 17 v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static characteristics Table 4 Static characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Conditions Value Drain-source on-state resistance2 RDS(on) VGS = 15V, ID = 13A, Body diode forward voltage VSD Tvj = 25°C Tvj = 100°C Tvj = 175°C VGS = 0V, ISD = 13A Tvj = 25°C Tvj = 100°C Tvj = 175°C Gate-source threshold voltage VGS(th) Unit min. typ. max. - 80 98 135 104 - - 3.8 3.7 3.6 5.2 - (tested after 1 ms pulse at VGS = 20V) ID = 5,6mA, VDS = VGS mΩ V V Tvj = 25°C Tvj =175°C 3.5 - 4.5 3.6 5.7 - VGS = 0V, VDS = 1200V Tvj = 25°C Tvj = 175°C - 1 30 180 - µA VGS = 20V, VDS = 0V - - 100 nA VGS = -7V, VDS = 0V - - -100 nA Zero gate voltage drain current IDSS Gate-source leakage current IGSS Transconductance gfs VDS = 20V, ID = 13A - 7 - S Internal gate resistance RG,int f = 1MHz, VAC = 25mV - 6 - Ω Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. 2 Datasheet 5 of 17 v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.2 Dynamic characteristics Table 5 Dynamic characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse capacitance Crss Coss stored energy Eoss Total gate charge QG Gate to source charge QGS,pl Gate to drain charge QGD Value Conditions VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV VDD = 800V, ID = 13A, VGS = 0/15V, turn-on pulse VDD = 800V, Lσ = 80nH, tSC RG,ext = 9Ohm, Tvj = 175°C VGS.on = 15V 3 Verified by design for single short circuit event at VGS,on = 15V. Short-circuit withstand time3 Datasheet 6 of 17 min. typ. max. - 1060 - - 58 - - 6.5 - - - - 22 28 - 9 - - 7 - - 3 - Unit pF µJ nC µs v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.3 Switching characteristics Table 6 Switching characteristics, Inductive load 4 Parameter Symbol Conditions Value Unit min. typ. max. MOSFET Characteristics, Tvj = 25°C Turn-on delay time td(on) VDD = 800V, ID = 13A, - 10 - Rise time tr - 22 - Turn-off delay time td(off) - 14 - Fall time tf - 13 - Turn-on energy Eon - 210 - Turn-off energy Eoff VGS = 0/15V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E - 82 - Total switching energy Etot - 292 - VDD = 800V, ISD = 13A, VGS at diode = 0V, dif/dt = 1000A/µs, - 100 - nC Qrr includes also QC , see Fig. C - 5 - A ns µJ Body Diode Characteristics, Tvj = 25°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm MOSFET Characteristics, Tvj = 175°C Turn-on delay time td(on) VDD = 800V, ID = 13A, - 10 - Rise time tr - 22 - Turn-off delay time td(off) - 16 - Fall time tf - 14 - Turn-on energy Eon - 300 - Turn-off energy Eoff VGS = 0/15V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E - 100 - Total switching energy Etot - 400 - VDD = 800V, ISD = 13A, VGS at diode = 0V, dif/dt = 1000A/µs, - 230 - nC Qrr includes also QC , see Fig. C - 7 - A ns µJ Body Diode Characteristics, Tvj = 175°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. 4 Datasheet 7 of 17 v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 4 Electrical characteristic diagrams 250 80 Ptot [W] IDS [A] 200 not for linear use 60 40 Rth(j-c,max) Rth(j-c,typ) 150 100 20 50 0 0 Figure 1 400 800 VDS [V] 0 1200 Safe operating area (SOA) (VGS = 0/15V, Tc = 25°C, Tj ≤ 175°C) 0 Figure 2 45 40 Rth(j-c,max) Rth(j-c,typ) 35 30 IDS [A] IDS [A] Rth(j-c,max) Rth(j-c,typ) 35 30 25 20 25 20 15 15 10 10 5 5 0 0 0 Datasheet Power dissipation as a function of case temperature limited by bond wire (Ptot = f(TC)) 45 40 Figure 3 25 50 75 100 125 150 175 TC [ C] 25 50 75 100 125 150 175 TC [ C] 0 Maximum DC drain to source current as Figure 4 a function of case temperature limited by bond wire (IDS = f(TC)) 8 of 17 25 50 75 100 125 150 175 TC [ C] Maximum source to drain current as a function of case temperature limited by bond wire (ISD = f(TC), VGS = 0V) v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 100 6 5 80 25 C VGS (th) [V] IDS [A] 175 C 60 40 4 3 2 1 20 0 0 -40 0 Figure 5 IDS [A] 80 60 10 VGS [V] 15 Typical transfer characteristic (IDS = f(VGS), VDS = 20V, tP = 20µs) Figure 6 100 20V 18V 16V 15V 14V 12V 10V 8V 6V 80 40 20 160 Typical gate-source threshold voltage as a function of junction temperature (VGS(th) = f(Tvj), IDS = 5,6mA, VGS = VDS) 20V 18V 16V 15V 14V 12V 10V 8V 6V 40 0 0 Datasheet 60 60 110 Tvj [ C] 20 0 Figure 7 10 20 IDS [A] 100 5 4 8 12 VDS [V] 16 20 Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=25°C, tP = 20µs) 0 Figure 8 9 of 17 4 8 12 VDS [V] 16 20 Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=175°C, tP = 20µs) v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 150 16 14 125 12 100 VGS [V] RDS (ON) [mOhm] VGS = 15V 75 50 10 8 6 4 25 2 0 0 -40 Figure 9 10 60 110 Tvj [ C] 160 0 Typical on-resistance as a function of junction temperature (RDS(on) = f(Tvj), IDS = 13A) Figure 10 10 20 QG [nC] 30 40 Typical gate charge (VGS = f(QG), IDS = 13A, VDS = 800V, turn-on pulse) 6 10000 5 1000 VSD [V] C [pF] 4 100 2 Ciss 10 Coss 1 Crss 1 1 10 100 0 1000 -50 VDS[V] Figure 11 Datasheet 3 Typical capacitance as a function of drain-source voltage (C = f(VDS), VGS = 0V, f = 1MHz) Figure 12 10 of 17 0 50 100 Tj [ C] 150 200 Typical body diode forward voltage as function of junction temperature (VSD=f(Tvj), VGS=0V, ISD=13A) v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 30 25 VGS=15V ISD [A] 20 15 10 VGS=0V 5 0 0 Figure 13 500 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD = f(VSD), Tvj = 25°C, tP = 20µs) 1 2 3 4 VSD [V] 5 6 Figure 14 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD = f(VSD), Tvj = 175°C, tP = 20µs) Figure 16 Typical switching energy losses as a function of drain-source current (E = f(IDS), VDD = 800V, VGS = 0V/15V, RG,ext = 2Ω, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) Etot Eon E [µJ] 400 Eoff 300 200 100 0 25 75 125 175 T [ C] Figure 15 Datasheet Typical switching energy losses as a function of junction temperature (E = f(Tvj), VDD = 800V, VGS = 0V/15V, RG,ext = 2Ω, ID = 13A, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) 11 of 17 v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 2000 80 td(on) tr td(off) tf Etot Eon 60 Eoff Time [ns] E [µJ] 1500 1000 40 500 20 0 0 0 20 40 RG,ext [Ohm] 0 60 10 20 30 40 RG,ext [Ohm] 50 60 Figure 17 Typical switching energy losses as a function of gate resistance (E = f(RG,ext), VDD = 800V, VGS = 0V/15V, ID = 13A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) Figure 18 Typical switching times as a function of gate resistor (t = f(RG,ext), VDD = 800V, VGS = 0V/15V, ID = 13A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) Figure 19 Typical reverse recovery charge as a function of diode current slope (Qrr = f(dif/dt), VDD = 800V, VGS = 0V/15V, ID = 13A, ind. load, test circuit in Fig.E, body diode at VGS = 0V) Figure 20 Typical reverse recovery current as a function of diode current slope (Irrm = f(dif/dt), VDD = 800V, VGS = 0V/15V, ID = 13A, ind. load, test circuit in Fig.E, body diode at VGS = 0V) Datasheet 12 of 17 v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Zthjc [K/W] 10.00 1.00 0.10 0.01 1E-6 Figure 21 Datasheet 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse i: ri: [K/W] τi: [s] 1E-5 1E-4 1E-3 tp [s] 1 3.15E-01 4.61E-04 2 3.05E-02 1.29E-05 1E-2 3 3.50E-01 2.51E-03 1E-1 4 3.44E-01 1.23E-02 1E0 Max. transient thermal resistance (MOSFET/diode) (Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D) 13 of 17 v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Package drawing 5 Package drawing PG-TO247-3-41 Figure 22 Datasheet Package drawing 14 of 17 v01_10 2023-01-18 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Test conditions 6 Test conditions 2% Figure 23 Datasheet Test conditions 15 of 17 v01_10 2023-01-18 AIMW120R080M1 1200V SiC Trench MOSFET Revision history Revision history Document version Date of release Description of changes V01_00 V01_10 2021-03-09 2023-01-18 ISD,pulse value adjusted Datasheet 16 of 17 v01_10 2023-01-18 Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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