AIMW120R045M1

AIMW120R045M1 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features          Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, VGS(th)=4.5V Fully controllable dv/dt Commutation robust body diode, ready for synchronous rectification Temperature independent turn-off switching losses Benefits      Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost Potential Applications    On-board Charger/PFC Booster/DC-DC Converter Auxilliary Inverter Product Validation Qualified for Automotive Applications. Product Validation according to AEC-Q100/101” Table 1 Key Performance and Package Parameters Type AIMW120R045M1 ID VDS 1200V Datasheet www.infineon.com/sic RDS(on),typ (TC=25°C, (Tvj=25°C, ID=20A, VGS=15V) Rth(j-c,max)) 52A 45mΩ Tvjmax Marking SP Number Package 175°C A120M1045 SP002472666 PG-TO247-3-41 Please read the Important Notice and Warnings at the end of this document V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Table of contents Features 1 Benefits 1 Potential Applications ..................................................................................................................... 1 Product Validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ........................................................................................................... 3 2 Thermal resistances ....................................................................................................... 4 3 3.1 3.2 3.3 Electrical Characteristics ................................................................................................ 5 Static characteristics ............................................................................................................................... 5 Dynamic characteristics .......................................................................................................................... 6 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams.................................................................................... 8 5 Package drawing .......................................................................................................... 14 6 Test conditions ............................................................................................................. 15 Revision History ............................................................................................................................ 16 Datasheet 2 V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Maximum ratings 1 Maximum ratings Stress above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2 Maximum ratings1 Parameter Symbol Value Unit Drain-source voltage, Tvj ≥ 25°C VDSS 1200 V DC drain current for Rth(j-c,max), limited by Tvjmax, VGS=15V TC = 25°C TC = 100°C ID 52 36 A Pulsed drain current, tp limited by Tvjmax, VGS = 15V ID,pulse 130 A DC body diode forward current for Rth(j-c,max), limited by Tvjmax, VGS=0V TC = 25°C TC = 100°C ISD Pulsed body diode current, tp limited by Tvjmax ISD,pulse 130 Gate-source voltage Max transient voltage, < 1% duty cycle Recommended turn-on gate voltage Recommended turn-off gate voltage VGSS VGSS,on VGSS,off -7… 20 15 0 Power dissipation, limited by Tvjmax TC = 25°C TC=100°C Ptot 228 114 W Virtual junction temperature Tvj -40…175 °C Storage temperature Tstg -55…150 °C Soldering temperature, wavesoldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Tsold 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm 52 28 A A 2 V Not subject to production test. Parameter verified by design/characterization. Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. 1 2 Datasheet 3 V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Thermal resistances 2 Thermal resistances Table 3 Thermal resistances1 Parameter Symbol MOSFET/body diode thermal resistance, junction – case Rth(j-c) Thermal resistance, junction – ambient Rth(j-a) 1 Conditions leaded Value min. typ. max. - 0.51 0.66 K/W - - 62 K/W Unit Not subject to production test. Parameter verified by design/characterization. Datasheet 4 V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static characteristics Table 4 Static characteristics (at Tvj=25°C, unless otherwise specified) Parameter Drain-source on-state resistance2 Body Diode forward voltage Gate-source threshold voltage2 Zero gate voltage drain current Symbol Conditions Value Unit min. typ. max. RDS(on) VGS=15V, ID=20A, Tvj = 25°C Tvj = 100°C Tvj = 175°C - 45 55 75 59 - VSD VGS= 0V, ISD=20A Tvj = 25°C Tvj =100°C Tvj =175°C - 4.1 4.0 3.9 5.2 - VGS(th) (tested after 1 ms pulse at VGS=+20 V) ID = 10mA, VDS = VGS Tvj = 25°C Tvj =175°C 3.5 - 4.5 3.6 5.7 - VGS = 0V, VDS = 1200V Tvj=25°C Tvj=175°C - 2 50 200 - µA VGS = 20V, VDS = 0V - - 120 nA VGS = -10V, VDS = 0V - - -120 nA IDSS Gate-source leakage current IGSS mΩ V V Transconductance gfs VDS = 20V, ID = 20A - 11.1 - S Internal gate resistance RG,int f = 1MHz, VAC = 25mV - 4.5 - Ω Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. 2 Datasheet 5 V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.2 Table 5 Dynamic characteristics Dynamic characteristics (at Tvj=25°C, unless otherwise specified) Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse capacitance Crss Coss stored energy Eoss Total gate charge QG Gate to source charge QGS,pl Gate to drain charge QGD Value Conditions min. max. Unit 2130 VDS = 800V, VGS = 0V, f=1MHz, VAC = 25mV - 107 11 - 44 VDD = 800V, ID = 20A, VGS = 0/15V, turn-on pulse VDD = 800V, Lσ = 80nH, RG,ext = 9Ohm, Tvj = 175°C tSC VGS.on = 15V 3 Verified by design for single short circuit event at VGS,on = 15V. Short-circuit withstand time3 Datasheet typ. 6 pF µJ 57 - 19 - nC - µs 13 - 3 V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.3 Table 6 Switching characteristics Switching characteristics, Inductive load 4 Parameter Symbol Conditions Value typ. min. max. Unit MOSFET Characteristics, Tvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Etot VDD=800V, ID=20A, VGS=0V/15V, RG,ext=2Ω, Lσ=40nH, diode: body diode at VGS=0V see Fig. E - 9 - ns - 32 - ns - 17 - ns - 13 - ns - 450 - µJ - 70 - µJ - 520 - µJ - 0.15 - µC - 8 - A - 9 - ns - 32 - ns - 20 - ns - 14 - ns - 490 - µJ - 75 - µJ - 565 - µJ Body Diode Characteristics, Tvj=25°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm VDD = 800V, ISD=20A, VGS at diode=0V, dif/dt=1000A/µs, Qrr includes also QC , see Fig. C MOSFET Characteristics, Tvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Etot VDD=800V, ID=20A, VGS=0V/15V, RG,ext=2Ω, Lσ=40nH, diode: body diode at VGS=0V, see Fig. E Body Diode Characteristics, Tvj=175°C Diode reverse recovery charge VDD = 800V, ISD=20A, 0.25 µC VGS at diode=0V, dif/dt=1000A/µs, Diode peak reverse Irrm 10 A Qrr includes also QC , recovery current see Fig. C 4 The chip technology was characterized up to 200 kV/µs. The measured dv/dt was limited by measurement test setup and package. Datasheet Qrr 7 V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 4 Electrical characteristic diagrams Figure 1 Reverse bias safe operating area Figure 2 (RBSOA) (Vgs = 0/15V, Tc = 25°C, Tj < 175°C) Power dissipation as a function of case temperature limited by bond wire (Ptot=f(TC) ) Figure 3 Maximum DC drain to source current as Figure 4 a function of case temperature limited by bond wire (IDS=f(TC) ) Maximum source to drain current as a function of case temperature limited by bond wire (ISD=f(TC), VGS=0V) Datasheet 8 V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 5 Typical transfer characteristic (IDS=f(VGS), VDS=20V, tP = 20 µs) Figure 7 Typical output characteristic, VGS as Figure 8 parameter (IDS=f(VDS), Tvj=25°C, tP = 20 µs) Datasheet Figure 6 9 Typical gate-source threshold voltage as a function of junction temperature (VGS(th)=f(Tvj), IDS=10mA, VGS=VDS) Typical output characteristic, VGS as parameter (IDS=f(VDS), Tvj=175°C, tP = 20 µs) V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 9 Typical on-resistance as a function of junction temperature (RDS(on)=f(Tvj), VGS=15V) Figure 11 Typical capacitance as a function of drain-source voltage (C=f(VDS), VGS=0V, f=1MHz) Datasheet Figure 10 Figure 12 10 Typical gate charge (VGS=f(QG), IDS=20A,VDS=800V, turn-on pulse) Typical body diode forward voltage as function of junction temperature (VSD=f(Tvj), VGS=0V, ISD=20A) V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 13 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD=f(VSD), Tvj=25°C, tP=20 µs) Figure 15 Typical switching energy losses as a function of junction temperature (E=f(Tvj), VDD=800V, VGS=0V/15V, RG,ext=2Ω, ID=20A, ind. load, test circuit in Fig. E, diode: body diode) Datasheet Figure 14 Figure 16 11 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD=f(VSD), Tvj=175°C, tP=20 µs) Typical switching energy losses as a function of drain-source current (E = f(IDS), VDD = 800V, VGS = 0V/15V, RG,ext = 2Ω, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode) V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 17 Typical switching energy losses as a Figure 18 function of gate resistance (E=f(RG,ext), VDD=800V, VGS=0V/15V, ID=20A, Tvj=175°C, ind. load, test circuit in Fig. E, diode: body diode) Figure 19 Typical reverse recovery charge as a function of diode current slope (Qrr=f(dif/dt), VDD=800V, ID=20A, ind. load, test circuit in Fig.E) Datasheet Figure 20 12 Typical switching times as a function of gate resistor (t=f(RG,ext), VDD=800V, VGS=0V/15V, ID=20A, Tvj=175°C, ind. load, test circuit in Fig. E, diode: body diode) Typical reverse recovery current as a function of diode current slope (Irrm=f(dif/dt), VDD=800V, ID=20A, ind. load, test circuit in Fig.E) V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 21 Datasheet Max. transient thermal resistance (MOSFET/diode) (Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D) 13 V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Package drawing 5 Package drawing PG-TO247-3-41 Figure 22 Datasheet Package drawing 14 V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Test conditions 6 Figure 23 Datasheet Test conditions Test conditions 15 V3.0 2019-09-22 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Revision History Revision History Major changes since the last revision Page or Reference Description of change All pages First release of datasheet V3.0 Datasheet 16 V3.0 2019-09-22 Trademarks All referenced product or service names and trademarks are the property of their respective owners. owners. 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