AIMW120R060M1H
AIMW120R060M1H
CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1
Silicon Carbide MOSFET
Drain
pin 2
Features
•
•
•
•
•
•
•
•
•
Gate
pin 1
Revolutionary semiconductor material - Silicon Carbide
Very low switching losses
Threshold-free on state characteristic
IGBT-compatible driving voltage (18V for turn-on)
0V turn-off gate voltage
Benchmark gate threshold voltage, VGS(th)=4.5V
Fully controllable dv/dt
Commutation robust body diode, ready for synchronous rectification
Temperature independent turn-off switching losses
Source
pin 3
Benefits
•
•
•
•
•
1
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
2
3
Potential Applications
•
•
On-board Charger/PFC
Booster/DC-DC Converter
Product validation
Qualified for Automotive Applications. Product Validation according to AEC-Q100/101
Table 1
Key Performance and Package Parameters
Type
AIMW120R060M1H
Datasheet
www.infineon.com
VDS
1200V
ID
(TC=25°C, Rth(j-c,max))
36A
RDS(on),typ
(Tvj = 25°C, ID = 13A,
Tvjmax
Marking
Package
175°C
A120M1060
PG-TO247-3-41
VGS = 18V)
60mΩ
Please read the Important Notice and Warnings at the end of this document
page 1 of 17
v01_00
2021-03-09
AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Table of contents
1200V SiC Trench MOSFET
Table of contents
Features ........................................................................................................................................ 1
Benefits ......................................................................................................................................... 1
Potential applications ..................................................................................................................... 1
Product validation .......................................................................................................................... 1
Table of contents ............................................................................................................................ 2
1
Maximum ratings ................................................................................................................... 3
2
Thermal resistances ............................................................................................................... 4
3
3.1
3.2
3.3
Electrical Characteristics ........................................................................................................ 5
Static characteristics ............................................................................................................................... 5
Dynamic characteristics .......................................................................................................................... 6
Switching characteristics ........................................................................................................................ 7
4
Electrical characteristic diagrams ............................................................................................ 8
5
Package drawing................................................................................................................... 14
6
Test conditions ..................................................................................................................... 15
Revision history............................................................................................................................. 16
Datasheet
2 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Maximum ratings
1
Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2
Maximum ratings1
Parameter
Symbol
Value
Unit
Drain-source voltage, Tvj ≥ 25°C
VDSS
1200
V
DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 18V,
TC = 25°C
TC = 100°C
ID
36
26
A
Pulsed drain current, tp limited by Tvjmax, VGS = 18V
ID,pulse1
74
A
DC body diode forward current for Rth(j-c,max),
limited by Tvjmax, VGS = 0V
TC = 25°C
TC = 100°C
ISD
Pulsed body diode current, tp limited by Tvjmax
ISD,pulse1
74
Gate-source voltage2
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
VGS
VGS,on
VGS,off
-7… 23
18
0
Power dissipation, limited by Tvjmax
TC = 25°C
TC = 100°C
Ptot
150
75
W
Virtual junction temperature
Tvj
-55… 175
°C
Storage temperature
Tstg
-55… 150
°C
Soldering temperature,
wave soldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
Tsold
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
36
22
A
A
V
v Not subject to production test. Parameter verified by design/characterization.
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
1
2
Datasheet
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Thermal resistances
2
Thermal resistances
Table 3
Thermal resistances1
Parameter
Symbol
MOSFET/body diode
thermal resistance,
junction – case
Rth(j-c)
Value
Conditions
Unit
min.
typ.
max.
-
0.8
1
K/W
62
K/W
Thermal resistance,
Rth(j-a)
leaded
junction – ambient
1
Not subject to production test. Parameter verified by design/characterization.
Datasheet
4 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3
Electrical Characteristics
3.1
Static characteristics
Table 4
Static characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter
Symbol
Drain-source on-state
resistance2
RDS(on)
Body diode forward
voltage
VSD
Gate-source threshold
voltage
VGS(th)
Conditions
Value
Unit
min.
typ.
max.
VGS = 18V, ID = 13A,
Tvj = 25°C
Tvj = 100°C
Tvj = 175°C
-
60
76
113
78
-
VGS = 0V, ISD = 13A
Tvj = 25°C
Tvj = 100°C
Tvj = 175°C
-
3.8
3.7
3.6
5.2
-
mΩ
V
(tested after 1 ms pulse at
VGS = 20V)
ID = 5,6mA, VDS = VGS
Tvj = 25°C
Tvj =175°C
3.5
-
4.5
3.6
5.7
-
VGS = 0V, VDS = 1200V
Tvj = 25°C
Tvj = 175°C
-
1
30
180
-
µA
VGS = 23V, VDS = 0V
-
-
100
nA
VGS = -7V, VDS = 0V
-
-
-100
nA
V
Zero gate voltage drain
current
IDSS
Gate-source leakage
current
IGSS
Transconductance
gfs
VDS = 20V, ID = 13A
-
7
-
S
Internal gate resistance
RG,int
f = 1MHz, VAC = 25mV
-
6
-
Ω
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
2
Datasheet
5 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.2
Dynamic characteristics
Table 5
Dynamic characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter
Symbol
Input capacitance
Ciss
Output capacitance
Coss
Reverse capacitance
Crss
Coss stored energy
Eoss
Total gate charge
QG
Gate to source charge
QGS,pl
Gate to drain charge
QGD
Datasheet
Value
Conditions
VDD = 800V, VGS = 0V,
f = 1MHz, VAC = 25mV
VDD = 800V, ID = 13A,
VGS = 0/18V, turn-on pulse
6 of 17
min.
typ.
max.
-
1060
-
-
58
-
-
6.5
-
-
-
-
22
31
-
9
-
-
7
-
Unit
pF
µJ
nC
v01_00
2021-03-09
AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.3
Switching characteristics
Table 6
Switching characteristics, Inductive load 4
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
-
8
-
-
16
-
-
16
-
-
13
-
-
167
-
-
79
-
-
246
-
-
116
-
nC
-
5
-
A
-
8
-
-
19
-
-
17
-
-
13
-
-
241
-
-
103
-
-
344
-
-
244
-
nC
-
7
-
A
MOSFET Characteristics, Tvj = 25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Etot
VDD = 800V, ID = 13A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
ns
µJ
Body Diode Characteristics, Tvj = 25°C
Diode reverse recovery
charge
Qrr
Diode peak reverse
recovery current
Irrm
VDD = 800V, ISD = 13A,
VGS at diode = 0V,
dif/dt = 1000A/µs,
Qrr includes also QC ,
see Fig. C
MOSFET Characteristics, Tvj = 175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Etot
VDD = 800V, ID = 13A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
ns
µJ
Body Diode Characteristics, Tvj = 175°C
Diode reverse recovery
charge
Qrr
Diode peak reverse
recovery current
Irrm
VDD = 800V, ISD = 13A,
VGS at diode = 0V,
dif/dt = 1000A/µs,
Qrr includes also QC ,
see Fig. C
The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test
setup and package.
4
Datasheet
7 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
4
Electrical characteristic diagrams
250
80
Ptot [W]
IDS [A]
200
not for linear use
60
40
Rth(j-c,max)
Rth(j-c,typ)
150
100
20
50
0
0
Figure 1
400
800
VDS [V]
0
1200
Safe operating area (SOA)
(VGS = 0/18V, Tc = 25°C, Tj ≤ 175°C)
0
Figure 2
45
Rth(j-c,max)
Rth(j-c,typ)
40
35
35
30
30
IDS [A]
IDS [A]
45
Rth(j-c,max)
Rth(j-c,typ)
40
25
20
25
20
15
15
10
10
5
5
0
0
0
Datasheet
Power dissipation as a function of case
temperature limited by bond wire
(Ptot = f(TC))
50
50
Figure 3
25 50 75 100 125 150 175
TC [ C]
0
25 50 75 100 125 150 175
TC [ C]
Maximum DC drain to source current as Figure 4
a function of case temperature limited
by bond wire (IDS = f(TC))
8 of 17
25 50 75 100 125 150 175
TC [ C]
Maximum source to drain current as a
function of case temperature limited by
bond wire (ISD = f(TC), VGS = 0V)
v01_00
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
100
6
5
80
25 C
VGS (th) [V]
IDS [A]
175 C
60
40
4
3
2
1
20
0
0
-40
0
Figure 5
IDS [A]
80
60
10
VGS [V]
15
Typical transfer characteristic
(IDS = f(VGS), VDS = 20V, tP = 20µs)
Figure 6
100
20V
18V
16V
15V
14V
12V
10V
8V
6V
80
40
20
160
Typical gate-source threshold voltage
as a function of junction temperature
(VGS(th) = f(Tvj), IDS = 5,6mA, VGS = VDS)
20V
18V
16V
15V
14V
12V
10V
8V
6V
40
0
0
Datasheet
60
60
110
Tvj [ C]
20
0
Figure 7
10
20
IDS [A]
100
5
4
8
12
VDS [V]
16
20
Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=25°C, tP = 20µs)
0
Figure 8
9 of 17
4
8
12
VDS [V]
16
20
Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=175°C, tP = 20µs)
v01_00
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
150
18
16
125
14
100
12
VGS [V]
RDS (ON) [mOhm]
VGS = 18V
75
50
10
8
6
4
25
2
0
0
-40
Figure 9
10
60
110
Tvj [ C]
160
0
Typical on-resistance as a function of
junction temperature
(RDS(on) = f(Tvj), IDS = 13A)
Figure 10
10
20
QG [nC]
30
40
Typical gate charge
(VGS = f(QG), IDS = 13A, VDS = 800V, turn-on
pulse)
6
10000
5
1000
VSD [V]
C [pF]
4
100
3
2
10
Ciss
Coss
1
Crss
1
1
10
100
0
1000
-50
VDS[V]
Figure 11
Datasheet
Typical capacitance as a function of
drain-source voltage
(C = f(VDS), VGS = 0V, f = 1MHz)
Figure 12
10 of 17
0
50
100
Tj [ C]
150
200
Typical body diode forward voltage as
function of junction temperature
(VSD=f(Tvj), VGS=0V, ISD=13A)
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
30
25
VGS=18V
ISD [A]
20
15
10
VGS=0V
5
0
0
Figure 13
Typical body diode forward current as
function of forward voltage, VGS as
parameter
(ISD = f(VSD), Tvj = 25°C, tP = 20µs)
Figure 14
1
2
3
4
VSD [V]
5
6
Typical body diode forward current as
function of forward voltage, VGS as
parameter
(ISD = f(VSD), Tvj = 175°C, tP = 20µs)
1500
400
Etot
Etot
Eon
Eon
1250
Eoff
300
Eoff
E [µJ]
E [µJ]
1000
200
750
500
100
250
0
25
75
125
0
175
0
T [ C]
Figure 15
Datasheet
Typical switching energy losses as a
function of junction temperature
(E = f(Tvj), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, ID = 13A, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
Figure 16
11 of 17
10
20
ID [A]
30
40
Typical switching energy losses as a
function of drain-source current
(E = f(IDS), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, Tvj = 175°C, ind. load, test
circuit in Fig. E, diode: body diode at VGS
= 0V)
v01_00
2021-03-09
AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
2000
80
td(on)
tr
td(off)
tf
Etot
Eon
60
Eoff
Time [ns]
E [µJ]
1500
1000
40
500
20
0
0
0
20
40
RG,ext [Ohm]
0
60
10
20 30 40
RG,ext [Ohm]
50
60
Figure 17
Typical switching energy losses as a
function of gate resistance
(E = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 13A, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
Figure 18
Typical switching times as a function of
gate resistor
(t = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 13A, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode at VGS = 0V)
Figure 19
Typical reverse recovery charge as a
function of diode current slope
(Qrr = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 13A, ind. load, test circuit in Fig.E,
body diode at VGS = 0V)
Figure 20
Typical reverse recovery current as a
function of diode current slope
(Irrm = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 13A, ind. load, test circuit in Fig.E,
body diode at VGS = 0V)
Datasheet
12 of 17
v01_00
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
Zthjc [K/W]
10.00
1.00
0.10
0.01
1E-6
Figure 21
Datasheet
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
i:
ri: [K/W]
τi: [s]
1E-5
1E-4
1E-3
tp [s]
1
3.15E-01
4.61E-04
2
3.05E-02
1.29E-05
1E-2
3
3.50E-01
2.51E-03
1E-1
4
3.44E-01
1.23E-02
1E0
Max. transient thermal resistance (MOSFET/diode)
(Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D)
13 of 17
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Package drawing
5
Package drawing
PG-TO247-3-41
Figure 22
Datasheet
Package drawing
14 of 17
v01_00
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AIMW120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Test conditions
6
Test conditions
2%
Figure 23
Datasheet
Test conditions
15 of 17
v01_00
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AIMW120R060M1H
1200V SiC Trench MOSFET
Revision history
Revision history
Document
version
Date of release
Description of changes
V01_00
2021-03-09
-
Datasheet
16 of 17
v01_00
2021-03-09
Trademarks
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Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2021.
owners.
All Rights Reserved.
Important notice
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
Please note that this product is qualified according to the AEC Q100 or AEC Q101 documents of the Automotive
Electronics Council.
Warnings
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.