AUIRF2805STRL

  AUIRF2805S AUIRF2805L AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS   55V RDS(on) typ. max. 3.9m 4.7m 135A ID D D S D S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Base part number Package Type AUIRF2805L TO-262 AUIRF2805S D2-Pak G G TO-262 AUIRF2805L D2Pak AUIRF2805S G Gate D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 S Source Orderable Part Number AUIRF2805L AUIRF2805S AUIRF2805STRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 135 ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation 96 700 200 VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Single Pulse Avalanche Energy Tested Value  Avalanche Current  Repetitive Avalanche Energy  Pead Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance   Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount, steady state)  Units A W 1.3 ± 20 380 920 See Fig.15,16, 12a, 12b W/°C V mJ A mJ V/ns 2.0 -55 to + 175   300   °C  Typ. Max. Units ––– 0.75 40 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF2805S/L   Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 55 ––– ––– 2.0 91 ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.06 ––– V/°C Reference to 25°C, ID = 1mA 3.9 4.7 m VGS = 10V, ID = 104A  ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– S VDS = 25V, ID = 104A ––– 20 VDS =55 V, VGS = 0V µA ––– 250 VDS =44V,VGS = 0V,TJ =150°C ––– 200 VGS = 20V nA ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– 150 38 52 14 120 68 110 230 57 78 ––– ––– ––– ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ––– ––– ––– ––– ––– ––– 5110 1190 210 6470 860 1600 ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units ––– ––– 175 ––– ––– 700 ––– ––– ––– ––– 80 290 1.3 120 430 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Effective Output Capacitance Coss eff. Diode Characteristics   Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 104A nC   VDS = 44V VGS = 10V VDD = 28V ID = 104A ns RG= 2.5 VGS = 10V  Between lead, 6mm (0.25in.) nH   from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 pF   VGS = 0V, VDS = 1.0V ƒ = 1.0MHz VGS = 0V, VDS = 44V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V  Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 104A,VGS = 0V  ns TJ = 25°C ,IF = 104A nC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax, starting TJ = 25°C, L = 0.08mH, RG = 25, IAS = 104A, VGS =10V. (See Fig.12) ISD 104A, di/dt 240A/µs, VDD V(BR)DSS, TJ  175°C. Pulse width 400µs; duty cycle  2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)  Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.  This value determined from sample failure population, starting TJ = 25°C, L = 0.08mH, RG = 25, IAS = 104A, VGS =10V.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994       2 2015-9-30 AUIRF2805S/L   1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 100 4.5V 10 20µs PULSE WIDTH Tj = 25°C 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 10 100 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 4.5V 20µs PULSE WIDTH Tj = 175°C 10 0.1 VDS , Drain-to-Source Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 1000 3.0 ID, Drain-to-Source Current A) T J = 25°C 2.5 VDS = 25V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 2.0 (Normalized) 100 RDS(on) , Drain-to-Source On Resistance T J = 175°C 10 I D = 175A 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 TJ, Junction Temperature 80 100 120 140 160 180 ( ° C) Fig. 4 Normalized On-Resistance vs. Temperature 2015-9-30 AUIRF2805S/L   10000 Crss Coss = Cgd = Cds + Cgd 6000 Ciss 4000 2000 Coss Crss 0 1 16 12 8 4 0 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) T J = 175°C 10.0 T J = 25°C 1.0 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 80 120 160 200 240 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 1.6 VSD, Source-toDrain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage   4 40 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100.0 VDS = 44V VDS= 28V ID= 104A VGS , Gate-to-Source Voltage (V) 8000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED 1000 100 100µsec 1msec 10 1 1.8 OPERATION IN THIS AREA LIMITED BY RDS (on) Tc = 25°C Tj = 175°C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2015-9-30 AUIRF2805S/L   140 LIMITED BY PACKAGE ID , Drain Current (A) 120 100 80 60 40 20 0 Fig 10a. Switching Time Test Circuit 25 50 75 100 125 TC, Case Temperature 150 175 ( °C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-9-30 AUIRF2805S/L   DRIVER L VDS D.U.T RG + V - DD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 15V 800 ID 42.5A 73.5A BOTTOM 104A TOP 600 400 200 0 25 50 75 100 125 Starting T ,JJunction Temperature 150 175 ( °C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform -VGS(th) Gate threshold Voltage (V) 4.0 ID = 250µA 3.0 2.0 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit   6 2015-9-30 AUIRF2805S/L   10000 Avalanche Current (A) 1000 Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming  Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 10 0.10 1 0.1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 104A 300 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) 175 PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature   7 2015-9-30 AUIRF2805S/L   Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs   8 2015-9-30 AUIRF2805S/L   D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUF2805S YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code 9 2015-9-30 AUIRF2805S/L   TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUF2805L YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code   10 2015-9-30 AUIRF2805S/L   D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 11 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2015-9-30 AUIRF2805S/L   Qualification Information Qualification Level Moisture Sensitivity Level   Machine Model ESD Human Body Model   Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-262 MSL1 D2-Pak Class M4 (+/- 800V)† AEC-Q101-002 Class H3A (+/- 5000V)† AEC-Q101-001 Class C5 (+/- 2000V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 9/30/2015 Comments   Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.   12 2015-9-30