AUIRF2907ZS7PTL

PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET® Power MOSFET Features l l l l l l l V(BR)DSS D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * 75V RDS(on) typ. G S S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description 3.0mΩ max. 3.8mΩ ID (Silicon Limited) 180A j D Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S G S S S S D2Pak 7 Pin Absolute Maximum Ratings G D S Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 180 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 120 IDM Pulsed Drain Current 700 PD @TC = 25°C Maximum Power Dissipation 300 W Linear Derating Factor 2.0 ± 20 W/°C V 160 mJ c VGS EAS Gate-to-Source Voltage EAS (tested) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Single Pulse Avalanche Energy (Thermally Limited) c g d c A 410 A See Fig.12a,12b,15,16 mJ -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 300 10 lbf•in (1.1N•m) Thermal Resistance RθJC Junction-to-Case i Parameter Typ. Max. ––– 0.50 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) ––– 40 h Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/20/10 AUIRF2907ZS-7P Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) SMD VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage gfs IDSS Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 75 ––– ––– 2.0 94 ––– ––– ––– ––– ––– 0.066 ––– ––– V V/°C 3.0 ––– ––– ––– ––– ––– ––– 3.8 4.0 ––– 20 250 200 -200 mΩ V S µA nA Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 110A VDS = VGS, ID = 250µA VDS = 25V, ID = 110A VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V e Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– 170 55 66 21 90 92 44 260 ––– ––– ––– ––– ––– ––– ––– 4.5 ––– Units nC ns e e nH f Conditions ID = 110A VDS = 60V VGS = 10V VDD = 38V ID = 110A RG = 2.6Ω VGS = 10V Between lead, ––– 7.5 ––– ––– ––– ––– ––– ––– ––– 7580 970 540 3750 650 1110 ––– ––– ––– ––– ––– ––– pF Min. Typ. Max. Units D 6mm (0.25in.) from package G and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 60V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V S Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L=0.026mH, RG = 25Ω, IAS = 110A, VGS =10V. Part not recommended for use above this value. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. „Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 ––– ––– 160 A ––– ––– 700 ––– ––– ––– ––– 35 40 1.3 53 60 Conditions MOSFET symbol V ns nC D showing the integral reverse G p-n junction diode. TJ = 25°C, IS = 110A, VGS = 0V TJ = 25°C, IF = 110A, VDD = 38V di/dt = 100A/µs e S e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) … This value determined from sample failure population starting TJ = 25°C, L=0.026mH, R G = 25Ω, IAS = 110A, VGS =10V. † This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ‡ Rθ is measured at TJ of approximately 90°C. ˆ Solder mounted on IMS substrate. www.irf.com AUIRF2907ZS-7P Qualification Information† Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D2 PAK 7 Pin MSL1 Class M4(425V) (per AEC-Q101-002) ESD Human Body Model Class H2(4000V) (per AEC-Q101-001) Charged Device Model Class C4 (1000V) (per AEC-Q101-005) RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF2907ZS-7P 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP BOTTOM 100 4.5V 10 4.5V ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 175°C Tj = 25°C 10 1 0.1 1 10 100 0.1 1000 10 100 1000 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 200 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current (Α) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 100 T J = 25°C 10 T J = 175°C 1 VDS = 25V ≤60µs PULSE WIDTH 0.1 1 2 3 4 5 6 7 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V T J = 25°C 150 T J = 175°C 100 50 V DS = 10V 380µs PULSE WIDTH 0 8 0 25 50 75 100 125 150 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com AUIRF2907ZS-7P 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 110A C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss Coss 1000 Crss 10.0 VDS= 15V 8.0 6.0 4.0 2.0 0.0 100 1 10 0 100 50 100 150 200 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) VDS= 60V VDS= 38V T J = 175°C T J = 25°C 10 1 1000 1msec 100µsec 100 LIMITED BY PACKAGE 10 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 10msec DC 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1.4 0.1 1.0 10.0 100.0 VDS, Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF2907ZS-7P 200 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 ID, Drain Current (A) 160 120 80 40 ID = 180A VGS = 10V 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100120140160180 175 T J , Junction Temperature (°C) T C , Case Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 τJ SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 τJ τ1 R2 R2 τ2 τ1 τ2 Ci= τi/Ri Ci i/Ri R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.1072 0.000096 0.2787 0.1143 0.002614 0.013847 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF2907ZS-7P 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V VGS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 700 ID 24A 34A BOTTOM 110A TOP 600 500 400 300 200 100 0 V(BR)DSS 25 tp 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms QG 10 V QGD 4.5 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V VGS(th) Gate threshold Voltage (V) QGS 4.0 3.5 3.0 2.5 2.0 ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 .2µF .3µF -75 -50 -25 0 D.U.T. + V - DS 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) VGS 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com Fig 14. Threshold Voltage vs. Temperature 7 AUIRF2907ZS-7P 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 100 0.01 0.05 10 0.10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 110A 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 8 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav www.irf.com AUIRF2907ZS-7P D.U.T Driver Gate Drive ƒ + - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ D= Period P.W. + V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF2907ZS-7P D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) D2Pak - 7 Pin Part Marking Information Part Number AUIRF2907ZS-7 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF2907ZS-7P D2Pak - 7 Pin Tape and Reel www.irf.com 11 AUIRF2907ZS-7P Ordering Information Base part number AUIRF2907ZS-7P 12 Package Type D2Pak Standard Pack Form Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 800 800 AUIRF2907ZS-7P AUIRF2907ZS7PTL AUIRF2907ZS7PTR www.irf.com AUIRF2907ZS-7P IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 13