AUIRFN8459TR

AUTOMOTIVE GRADE Features  Advanced Process Technology  Dual N-Channel MOSFET  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * AUIRFN8459 VDSS 40V RDS(on) typ. 4.8m max 5.9m ID (Silicon Limited) 70A 50A ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. Applications  12V Automotive Systems  Brushed DC Motor  Braking  Transmission Base Part Number Package Type AUIRFN8459 Dual PQFN 5mm x 6mm DUAL PQFN 5X6 mm G D S Gate Drain Source Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number AUIRFN8459TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. ID @ TC (Bottom) = 25°C ID @ TC (Bottom) = 100°C ID @ TC (Bottom) = 25°C IDM Parameter Continuous Drain Current, VGS @ 10V  Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current  PD @TC (Bottom) = 25°C Power Dissipation VGS EAS EAS (Tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range Max. 70 50 50 320 Units 50 W 0.33 ± 20 66 110 See Fig. 14, 15, 22a, 22b W/°C V mJ -55 to + 175 A A °C HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 51 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 12, 2015 AUIRFN8459 Thermal Resistance Symbol Parameter RJC (Bottom) Junction-to-Case  Typ. ––– Max. 3.0 Units RJC (Top) Junction-to-Case  ––– 45 RJA Junction-to-Ambient  ––– 40 °C/W Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ––– 0.037 ––– V/°C Reference to 25°C, ID = 1.0mA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 4.8 5.9 RDS(on) Static Drain-to-Source On-Resistance m VGS = 10V, ID = 40A  VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V VDS = VGS, ID = 50µA gfs Forward Transconductance 66 ––– ––– S VDS = 10V, ID = 40A RG Internal Gate Resistance ––– 1.9 –––  ––– ––– 1.0 VDS = 40V, VGS = 0V IDSS Drain-to-Source Leakage Current µA ––– ––– 150 VDS = 40V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge ––– 40 60 ID = 40A VDS = 20V Qgs Gate-to-Source Charge ––– 13 ––– nC VGS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 14 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 26 ––– ID = 40A, VDS =0V, VGS = 10V td(on) Turn-On Delay Time ––– 10 ––– VDD = 26V ID = 40A tr Rise Time ––– 55 ––– ns td(off) Turn-Off Delay Time ––– 25 ––– RG = 2.7 VGS = 10V tf Fall Time ––– 42 ––– Ciss Input Capacitance ––– 2250 ––– VGS = 0V VDS = 25V Coss Output Capacitance ––– 340 ––– Crss Reverse Transfer Capacitance ––– 215 ––– pF ƒ = 1.0 MHz Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 400 ––– VGS = 0V, VDS = 0V to 32V  Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 490 ––– VGS = 0V, VDS = 0V to 32V  Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current ––– ––– 70 MOSFET symbol IS A (Body Diode) showing the integral reverse Pulsed Source Current ––– ––– 320 ISM A (Body Diode)  p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 40A, VGS = 0V  dv/dt Peak Diode Recovery  ––– 7.0 ––– V/ns TJ = 175°C, IS= 40A, VDS = 40V ––– 22 ––– TJ = 25°C trr Reverse Recovery Time ns VR = 34V, ––– 23 ––– TJ = 125°C IF = 40A ––– 17 ––– TJ = 25°C di/dt = 100A/µs Qrr Reverse Recovery Charge nC ––– 17 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.0 ––– A TJ = 25°C 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 12, 2015 AUIRFN8459 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.0V 4.5V 4.3V 10 1  60µs PULSE WIDTH Tj = 25°C 4.3V 100 0.1 BOTTOM 10 4.3V  60µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 10 100 Fig. 2 Typical Output Characteristics 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) 1 VDS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 100 T J = 175°C 10 T J = 25°C 1 VDS = 10V  60µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ID = 40A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 9.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 14 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORT ED Crss = C gd VGS, Gate-to-Source Voltage (V) ID = 40A Coss = Cds + Cgd C, Capacitance (pF) VGS 15V 10V 8.0V 7.0V 6.0V 5.0V 4.5V 4.3V Ciss 1000 Coss Crss 12 VDS= 32V VDS= 20V VDS= 8.0V 10 8 6 4 2 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 www.irf.com © 2015 International Rectifier 0 10 20 30 40 50 60 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback May 12, 2015 AUIRFN8459 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 100 T J = 175°C 10 T J = 25°C 1 100µsec 100 1msec Limited by 10 Package OPERATION IN THIS AREA LIMITED BY R (on) DS Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.5 1.0 1.5 2.0 2.5 3.0 0.1 VSD , Source-to-Drain Voltage (V) Limited By Package ID, Drain Current (A) 60 50 40 30 20 10 0 50 75 100 125 150 175 Id = 1.0mA 48 46 44 42 40 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature 0.25 0.20 Energy (µJ) Fig 10. Drain-to–Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m) 0.30 0.15 0.10 0.05 0.00 20 30 100 50 TC , Case Temperature (°C) 10 10 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 70 25 1 VDS, Drain-toSource Voltage (V) Fig. 7 Typical Source-to-Drain Diode 40 VDS, Drain-to-Source Voltage (V) Fig 11. Typical Coss Stored Energy 4 DC 0.1 0.0 0 10msec 1 www.irf.com © 2015 International Rectifier 20.0 VGS = 5.5V VGS = 6.0V 16.0 VGS = 7.0V VGS = 8.0V VGS = 10V 12.0 8.0 4.0 0 50 100 150 200 ID, Drain Current (A) Fig 12. Typical On-Resistance vs. Drain Current Submit Datasheet Feedback May 12, 2015 AUIRFN8459 Thermal Response ( ZthJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 10 1 0.1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.01 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Avalanche Current vs. Pulse Width Current 70 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 40A EAR , Avalanche Energy (mJ) 60 50 40 30 20 10 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature 5 www.irf.com © 2015 International Rectifier Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback May 12, 2015 4.5 25 ID = 40A 20 15 T J = 125°C 10 T J = 25°C 5 4.0 VGS(th) Gate threshold Voltage (V) RDS(on), Drain-to -Source On Resistance ( m ) AUIRFN8459 3.5 3.0 ID = 250µA 8 12 16 ID = 1.0mA 2.5 ID = 1.0A 2.0 0 4 ID = 50µA 1.5 20 -75 -50 -25 VGS, Gate-to-Source Voltage (V) IF = 26A V R = 34V 4 75 100 125 150 IF = 40A V R = 34V 4 TJ = 25°C TJ = 125°C 3 IRRM (A) IRRM (A) 50 5 5 2 TJ = 25°C TJ = 125°C 3 2 1 1 0 0 0 100 200 300 400 500 0 600 100 200 300 400 500 600 diF /dt ( A/µs) diF /dt ( A/µs) Fig 19. Typical Stored Charge vs. dif/dt Fig 18. Typical Recovery Current vs. dif/dt 90 90 IF = 26A V R = 34V 80 70 70 QRR (nC) 40 50 40 30 30 20 20 10 10 0 0 100 TJ = 25°C TJ = 125°C 60 50 0 IF = 40A V R = 34V 80 TJ = 25°C TJ = 125°C 60 QRR (nC) 25 Fig 17. Threshold Voltage vs. Temperature Fig 16. Typical On-Resistance vs. Gate Voltage 200 300 400 500 600 diF /dt ( A/µs) Fig 20. Typical Recovery Current vs. dif/dt 6 0 T J , Temperature ( °C ) www.irf.com © 2015 International Rectifier 0 100 200 300 400 500 600 diF /dt ( A/µs) Fig 21. Typical Stored Charge vs. dif/dt Submit Datasheet Feedback May 12, 2015 AUIRFN8459 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 22a. Unclamped Inductive Test Circuit Fig 23a. Switching Time Test Circuit Fig 22b. Unclamped Inductive Waveforms Fig 23b. Switching Time Waveforms VDD Fig 24a. Gate Charge Test Circuit 7 www.irf.com © 2015 International Rectifier Fig 24b. Gate Charge Waveform Submit Datasheet Feedback May 12, 2015 AUIRFN8459 Dual PQFN 5x6 Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Dual PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 12, 2015 AUIRFN8459 Qualification Information† Qualification Level Moisture Sensitivity Level Human Body Model Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Dual PQFN 5mm x 6mm MSL1 Class H1B(+/- 1000V) †† AEC-Q101-001 ESD Charged Device Model Class C5 (+/- 1000V)†† AEC-Q101-005 RoHS Compliant † Yes Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Highest passing voltage. Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L =75µH, RG = 50, IAS = 40A, VGS = 10V. ISD  50A, di/dt  650A/µs, VDD  V(BR)DSS, TJ  175°C.  Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf  R is measured at TJ of approximately 90°C.  This value determined from sample failure population, starting T J = 25°C, L= 75µH, RG = 50, IAS = 40A, VGS =10V. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 50A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 12, 2015 AUIRFN8459 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 12, 2015