AUTOMOTIVE GRADE
AUIRFS3006
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
2.0m
ID (Silicon Limited)
2.5m
270A
ID (Package Limited)
195A
D
S
G
D2Pak
AUIRFS3006
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Package Type
D2-Pak
AUIRFS3006
60V
RDS(on) typ.
max.
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
VDSS
S
Source
Orderable Part Number
AUIRFS3006
AUIRFS3006TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
270
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
191
195
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
1080
375
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D2 Pak
Units
A
W
2.5
± 20
320
See Fig.14,15, 22a, 22b
W/°C
V
mJ
A
mJ
V/ns
10
-55 to + 175
300
°C
Typ.
Max.
Units
–––
–––
0.40
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFS3006
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Typ. Max. Units
V
Conditions
40
–––
–––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C Reference to 25°C, ID = 5mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.0
2.5
m VGS = 10V, ID = 170A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
RG
Forward Trans conductance
Gate Resistance
IDSS
Drain-to-Source Leakage Current
280
–––
–––
–––
2.0
–––
–––
–––
20
–––
–––
250
S VDS = 25V, ID = 170A
VDS = 60V, VGS = 0V
µA
VDS = 48V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
nA
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
37
60
140
16
182
118
189
8970
1020
300
–––
–––
–––
–––
–––
–––
–––
–––
–––
Crss
Reverse Transfer Capacitance
–––
534
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
1480
–––
VDD = 39V
ID = 170A
ns
RG= 2.7
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 48V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
1920
–––
VGS = 0V, VDS = 0V to 48V
Min.
Typ. Max. Units
–––
––– 270
–––
–––
1080
–––
–––
–––
–––
–––
–––
–––
44
48
63
77
2.4
1.3
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 170A
VDS = 30V
nC
VGS = 10V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 170A,VGS = 0V
TJ = 25°C
VDD = 51V
ns
TJ = 125°C
IF = 170A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.022mH, RG = 25, IAS = 170A, VGS =10V. Part not recommended for use above this value.
ISD 170A, di/dt 1360A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
RJC value shown is at time zero
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AUIRFS3006
1000
1000
100
BOTTOM
TOP
10
3.5V
60µs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM
100
3.5V
60µs PULSE WIDTH
Tj = 175°C
1
10
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
10
100
Fig. 2 Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current)
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
TJ = 175°C
100
TJ = 25°C
10
VDS = 25V
60µs PULSE WIDTH
2.0
3.0
4.0
5.0
ID = 170A
VGS = 10V
2.0
1.5
1.0
0.5
1
6.0
-60 -40 -20
7.0
Coss = Cds + Cgd
Ciss
8000
4000
C oss
16
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
Crss = C gd
12000
20 40 60 80 100 120 140 160 180
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
16000
0
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
ID= 170A
12
VDS = 48V
VDS = 30V
8
4
C rss
0
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
0
40
80
120
160
200
240
280
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2015-12-2
AUIRFS3006
10000
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
100
10
TJ = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
LIMITED BY PACKAGE
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.0
0.4
0.8
1.2
1.6
0.1
2.0
V(BR)DSS , Drain-to-Source Breakdown Voltage
300
Limited By Package
ID, Drain Current (A)
250
200
150
100
50
0
50
75
100
125
150
10
100
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
25
1
VDS , Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
80
ID = 5mA
75
70
65
60
55
-60 -40 -20
175
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
1400
EAS, Single Pulse Avalanche Energy (mJ)
2.0
1.5
Energy (µJ)
DC
0.1
0.1
1.0
0.5
ID
20A
27A
BOTTOM 170A
1200
TOP
1000
800
600
400
200
0
0.0
0
10
20
30
40
50
25
60
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 11. Typical COSS Stored Energy
4
1msec
2015-12-2
AUIRFS3006
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
J
0.05
0.01
0.02
0.01
0.001
R1
R1
J
1
R2
R2
C
1
2
2
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W)
I (sec)
0.175365
0.000343
0.22547
0.006073
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
400
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 170A
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
2015-12-2
AUIRFS3006
20
ID = 1.0A
ID = 1.0mA
ID = 250µA
3.5
16
3.0
12
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
4.0
2.5
8
2.0
IF = 112A
VR = 51V
4
1.5
1.0
TJ = 125°C
TJ = 25°C
0
-75
-50 -25
0
25
50
75
100 125 150 175
100
200
300
TJ , Temperature ( °C )
400
500
600
700
800
dif / dt - (A / µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
20
700
600
16
12
QRR - (nC)
IRRM - (A)
500
8
4
0
400
300
IF = 170A
VR = 51V
200
IF = 112A
VR = 51V
TJ = 125°C
TJ = 25°C
100
TJ = 125°C
TJ = 25°C
0
100
200
300
400
500
600
700
800
100
200
300
dif / dt - (A / µs)
400
500
600
700
800
dif / dt - (A / µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
700
600
QRR - (nC)
500
400
300
200
IF = 170A
VR = 51V
100
TJ = 125°C
TJ = 25°C
0
100
200
300
400
500
600
700
800
dif / dt - (A / µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRFS3006
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2015-12-2
AUIRFS3006
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUFS3006
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFS3006
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
2015-12-2
AUIRFS3006
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
MSL1
Class M4 (+/- 800V)†
AEC-Q101-002
Class H3A (+/- 6000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
12/2/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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2015-12-2
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