AUIRFB8407
AUIRFS8407
AUIRFSL8407
AUTOMOTIVE GRADE
Features
HEXFET® Power MOSFET
Advanced Process Technology
l
New Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l Automotive Qualified *
l
D
G
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and wide variety of other
applications.
typ.
(SMD version) max.
ID (Silicon Limited)
40V
1.4mΩ
1.8mΩ
250A
ID (Package Limited)
195A
D
D
G
D
S
G
G
D
S
TO-262
AUIRFSL8407
D2Pak
AUIRFS8407
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
TO-220
TO-262
D2Pak
D2Pak
c
D
S
TO-220AB
AUIRFB8407
Applications
l
Electric Power Steering (EPS)
l
Battery Switch
l
Start/Stop Micro Hybrid
l
Heavy Loads
l
DC-DC Applications
Ordering Information
Base part number
Package Type
AUIRFB8407
AUIRFSL8407
AUIRFS8407
AUIRFS8407
VDSS
RDS(on)
Complete Part
Number
AUIRFB8407
AUIRFSL8407
AUIRFS8407
AUIRFS8407TRL
Quantity
50
50
50
800
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
Units
c
250
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
180
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
195
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
230
W
Linear Derating Factor
1.5
VGS
Gate-to-Source Voltage
± 20
W/°C
V
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
l
d
1000
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
x
Avalanche Characteristics
e
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (tested)
IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAR
Repetitive Avalanche Energy
d
300
x
10lbf in (1.1N m)
Mounting torque, 6-32 or M3 screw
d
A
e
350
500
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
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AUIRFB/S/SL8407
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS /ΔTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on) SMD
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
RDS(on) TO-220
VGS(th)
IDSS
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Min.
Typ.
Max.
Units
40
–––
–––
–––
2.0
–––
–––
–––
–––
–––
–––
0.029
1.4
1.6
3.0
–––
–––
–––
–––
2.2
–––
–––
1.8
2.0
4.0
1.0
150
100
-100
–––
V
V/°C
Min.
Typ.
Max.
Units
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
41
51
99
19
70
78
53
7330
1095
745
1310
1735
–––
225
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Max.
Units
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 100A
VGS = 10V, ID = 100A
VDS = VGS, ID = 150μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
d
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
h
i
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
VGS = 10V
ID = 100A, VDS =20V, VGS = 10V
VDD = 20V
ID = 30A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V , See Fig. 11
VGS = 0V, VDS = 0V to 32V
g
ns
pF
g
i
h
Diode Characteristics
Min.
Typ.
IS
Symbol
Continuous Source Current
Parameter
–––
–––
250
ISM
(Body Diode)
Pulsed Source Current
–––
–––
1000
VSD
dv/dt
trr
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Qrr
Reverse Recovery Charge
d
–––
–––
–––
–––
–––
–––
–––
f
Reverse Recovery Current
IRRM
1.0
3.0
30
30
24
25
1.3
c
l
1.3
–––
–––
–––
–––
–––
–––
Conditions
A
MOSFET symbol
A
showing the
integral reverse
V
V/ns
ns
nC
A
D
G
p-n junction diode.
TJ = 25°C, IS = 100A, VGS = 0V
TJ = 175°C, IS = 100A, VDS = 40V
TJ = 25°C
VR = 34V,
TJ = 125°C
IF = 100A
di/dt = 100A/μs
TJ = 25°C
S
g
g
g
TJ = 125°C
TJ = 25°C
Thermal Resistance
Typ.
Max.
R θJC
R θCS
Symbol
Junction-to-Case
Case-to-Sink, Flat Greased Surface, TO-220
Parameter
–––
0.50
0.65
–––
R θJA
R θJA
Junction-to-Ambient, TO-220
–––
–––
62
40
k
k
Junction-to-Ambient (PCB Mount) , D2Pak
2
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j
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Units
°C/W
April 01, 2014
AUIRFB/S/SL8407
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
D2 PAK
Moisture Sensitivity Level
MSL1
TO-262
TO-220
ESD
N/A
††
Machine Model
Class M4 (+/- 800V)
AEC-Q101-002
Human Body Model
Class H2 (+/- 4000V)
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
AEC-Q101-005
RoHS Compliant
††
††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A by source
bonding technology . Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.069mH
RG = 25Ω, IAS = 100A, VGS =10V.
ISD ≤ 100A, di/dt ≤ 1166A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
3
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Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Pulse drain current is limited by source bonding technology.
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AUIRFB/S/SL8407
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
BOTTOM
100
4.5V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
1
1
10
100
0.1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
1
VDS, Drain-to-Source Voltage (V)
1000
TJ = 175°C
100
TJ = 25°C
10
VDS = 10V
≤60μs PULSE WIDTH
3
4
5
6
7
1.4
1.2
1.0
0.8
-60 -40 -20 0 20 40 60 80 100120140160180
Fig 4. Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
1000
1.6
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
10000
VGS = 10V
1.8
8
VGS, Gate-to-Source Voltage (V)
100000
ID = 100A
0.6
1.0
C, Capacitance (pF)
Tj = 175°C
10
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID= 100A
12
VDS = 32V
VDS = 20V
10
8
6
4
2
0
100
0
1
10
40
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
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80
120
160
200
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFB/S/SL8407
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
TJ = 175°C
100
TJ = 25°C
10
1
100μsec
100
1msec
Limited by Package
10
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1
VGS = 0V
0.1
0.1
0.0
0.5
1.0
1.5
2.0
0.1
2.5
1
Fig 8. Maximum Safe Operating Area
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
250
LIMITED BY PACKAGE
ID , Drain Current (A)
200
150
100
50
0
25
50
75
100
125
150
175
50
Id = 1.0mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
EAS , Single Pulse Avalanche Energy (mJ)
1.2
1.0
Energy (μJ)
0.8
0.6
0.4
0.2
0.0
0
10
20
30
10
VDS , Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
40
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
5
DC
Tc = 25°C
Tj = 175°C
Single Pulse
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50
1400
ID
22A
46A
BOTTOM 100A
1200
TOP
1000
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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1
Thermal Response ( ZthJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C. (Single Pulse)
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
EAR , Avalanche Energy (mJ)
350
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 100A
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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( Ω)
RDS (on), Drain-to -Source On Resistance m
AUIRFB/S/SL8407
6
4.5
VGS(th), Gate threshold Voltage (V)
ID = 100A
5
4
TJ = 125°C
3
2
TJ = 25°C
1
4.0
3.5
3.0
ID = 150μA
ID = 1.0mA
ID = 1.0A
2.5
2.0
1.5
0
4.0
6.0
8.0
10.0
1.0
-75 -50 -25
VGS, Gate-to-Source Voltage (V)
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Typical On-Resistance vs. Gate Voltage
Fig 17. Threshold Voltage vs. Temperature
10
140
120
IF = 60A
VR = 34V
TJ = 25°C
TJ = 125°C
100
TJ = 25°C
TJ = 125°C
6
QRR (nC)
IRR (A)
8
IF = 60A
VR = 34V
4
80
60
40
2
20
0
0
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
140
10
8
IF = 100A
VR = 34V
120
IF = 100A
VR = 34V
TJ = 25°C
TJ = 125°C
100
TJ = 25°C
TJ = 125°C
6
QRR (nC)
IRR (A)
400
4
80
60
40
2
20
0
0
0
200
400
600
800
1000
0
200
7
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600
800
1000
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. dif/dt
400
Fig. 21 - Typical Stored Charge vs. dif/dt
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RDS (on) , Drain-to-Source On Resistance (mΩ)
AUIRFB/S/SL8407
8
VGS = 5.5V
7
VGS = 6.0V
6
5
VGS = 7.0V
VGS = 8.0V
VGS = 10V
4
3
2
1
0
100
200
300
400
500
ID , Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
8
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Driver Gate Drive
D.U.T
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
20V
VGS
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 24a. Unclamped Inductive Test Circuit
RD
VDS
Fig 24b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 25a. Switching Time Test Circuit
tr
t d(off)
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
9
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Qgs1 Qgs2
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
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AUIRFB/S/SL8407
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFB8407
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFB/S/SL8407
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRFSL8407
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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AUIRFB/S/SL8407
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRFS8407
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRFB/S/SL8407
D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
13
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AUIRFB/S/SL8407
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all
associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice.
IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and
any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any
such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications
intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or
death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold
International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses,
and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured
to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR
products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are
solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR
as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use
any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
14
www.irf.com © 2014 International Rectifier
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April 01, 2014
AUIRFB/S/SL8407
Revision History
Date
4/1/2014
15
Comment
• Updated package outline on page 10,11 & 12.
• Updated typo on the fig.19 and fig.21, unit of y-axis from "A" to "nC" on page7.
www.irf.com © 2014 International Rectifier
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April 01, 2014
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