AUIRG4PC40S-E

AUIRG4PC40S-E AUTOMOTIVE GRADE Insulated Gate Bipolar Transistor C VCES = 600V Features      VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AD package Lead-Free Automotive Qualified* @ VGE = 15V, IC = 31A E n-channel C Benefits    Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's C G AUIRG4PC40S-E TO-247AD G Gate Base part number Package Type AUIRG4PC40S-E TO-247AD E Standard Pack Form Quantity Tube 25 C Collector E Emitter Orderable Part Number AUIRG4PC40S-E Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current  Clamped Inductive Load Current  Continuous Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy  Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 600 60 31 120 120 ±20 15 160 65 -55 to +150 V A V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC Parameter Thermal Resistance Junction-to-Case RCS RJA Wt Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight Typ. ––– Max. 0.77 Units 0.24 ––– 6 (0.21) ––– 40 ––– °C/W g (oz) * Qualification standard can be found at www.infineon.com/ 1 September 11, 2020 AUIRG4PC40S-E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage  600 18 — — — — V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.75 — VCE(on) Collector-to-Emitter Saturation Voltage — — — 1.32 1.68 1.32 1.5 — — VGE(th) Gate Threshold Voltage Threshold Voltage Temperature Coeff. 3.0 — — -9.3 6.0 — Forward Transconductance 12 — — — — 21 — — — — — 250 2.0 1000 ±100 V(BR)CES V(BR)ECS VGE(th)/TJ gfe ICES Collector-to-Emitter Leakage Current IGES Gate-to-Emitter Leakage Current Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Qg Total Gate Charge (turn-on) — 100 Qge Gate-to-Emitter Charge (turn-on) — 14 Qgc Gate-to-Collector Charge (turn-on) — 34 td(on) Turn-On delay time — 22 tr Rise time — 18 td(off) Turn-Off delay time — 650 tf Fall time 380 Eon Turn-On Switching Loss — 0.45 Eoff Turn-Off Switching Loss — 6.5 Ets Total Switching Loss — 6.95 td(on) Turn-On delay time — 23 Max 150 21 51 — — 980 570 — — 9.9 — tr td(off) Rise time Turn-Off delay time — — 21 1000 — — tf Ets LE Cies Coes Cres Fall time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — — — — 940 12 13 2200 140 26 — — — — — — Units V Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A V/°C VGE = 0V, IC = 1mA V IC = 31A, VGE = 15V, TJ = 25°C IC = 60A, VGE = 15V, See Fig. 2,5 IC = 31A, VGE = 15V, TJ = 150°C V VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S µA nA VCE = 100V, IC = 31A VGE = 0V, VCE = 600V VGE = 0V, VCE = 10V,TJ = 25°C VGE = 0V, VCE = 600V, TJ = 150°C VGE = ±20V Units Conditions nC IC = 31A VGE = 15V VCC = 400V ns IC = 31A, VCC = 480V, VGE=15V RG = 10, TJ = 25°C See Fig.8 Energy losses include “tail” mJ See Fig. 10, 11, 13, 14 ns IC = 31A, VCC = 480V, VGE=15V RG = 10, TJ = 150°C Energy losses include “tail” mJ nH pF See Fig. 13, 14 Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 f = 1.0Mhz Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b )  VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10, (See fig. 13a)  Repetitive rating; pulse width limited by maximum junction temperature.  Pulse width  80µs; duty factor  0.1%.  Pulse width 5.0µs, single shot. 2 September 11, 2020 AUIRG4PC40S-E Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 2 - Typical Output Characteristics 3 Fig. 3 - Typical Transfer Characteristics September 11, 2020 AUIRG4PC40S-E Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 September 11, 2020 AUIRG4PC40S-E Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance 5 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 10 - Typical Switching Losses vs. Junction Temperature September 11, 2020 AUIRG4PC40S-E Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 Fig. 12 - Turn-Off SOA September 11, 2020 AUIRG4PC40S-E L RL = D.U.T. 0 - 480V VC * 50V 480V 4 X IC@25°C 480µF 960V 1000V   * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* D.U.T. VC 50V 1000V    * Driver same type as D.U.T., VC = 480V Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveforms 7 September 11, 2020 AUIRG4PC40S-E TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information Part Number AUG4PC40S-E YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX A= Automotive, Lead Free Lot Code TO-247AD package is not recommended for Surface Mount Application. 8 September 11, 2020 AUIRG4PC40S-E Qualification Information† Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-247AD N/A Class H1C (+/- 2000V) Human Body Model AEC-Q101-001 ESD Class C5 (+/- 2000V) Charged Device Model AEC-Q101-005 RoHS Compliant † †† Yes Qualification standards can be found at International Rectifier’s web site: www.infineon.com †† Exceptions to AEC-Q101 requirements are noted in the qualification report. Revision History Date 08/12/2020 Comments  Updated datasheet with corporate template.  Update the Dimensions table and package outline drawing on page 8 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 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