BFP460H6327XTSA1

BFP460 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP460 is a low noise device that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency fT of 22 GHz, low current and high robustness characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use. Feature list • • • • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 3 V, 5 mA High gain Gms = 17.5 dB at 1.8 GHz, 3 V, 20 mA OIP3 = 27.5 dBm at 1.8 GHz, 3 V, 20 mA High ESD robustness, typical 1.5 kV (HBM) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Amplifier for remote keyless entry (RKE) Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP460 / BFP460H6327XTSA1 SOT343 1=E 2=C 3=E 4=B Marking Pieces / Reel ABs 3000 BFP460 / BFP460H6433XTMA1 10000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Datasheet 2 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.5 4.2 TA = -55 °C, open base Collector emitter voltage VCES 15 E-B short circuited Collector base voltage VCBO 15 Open emitter Emitter base voltage VEBO 1.5 Open collector Base current IB 7 Collector current IC 70 Total power dissipation 1) Ptot Junction temperature TJ Ambient temperature TA Storage temperature TStg mA – 230 mW TS ≤ 92°C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the collector lead at the soldering point of the PCB. Datasheet 3 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 250 – Unit Note or test condition K/W – 260 240 200 Ptot / mW 160 120 80 40 00 15 30 45 60 75 TS / C Figure 1 Total power dissipation Ptot = f(Ts) Datasheet 4 90 105 120 135 150 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Unit Note or test condition Max. Collector emitter breakdown voltage V(BR)CEO 4.5 5.8 – Collector emitter leakage current ICES – – 1 2 1000 2) nA 30 2) 40 2) VCE = 15 V, VBE = 0, VCE = 2 V, VBE = 0, VCE = 5 V, VBE = 0, TA = 85 °C 3) E-B short circuited Collector base leakage current ICBO 1 – 30 2) 30 2) VCB = 2 V, IE = 0, VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 1 500 2) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 120 160 90 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. V   IC = 1 mA, IB = 0, open base VCE = 3 V, IC = 20 mA, pulse measured Unit Note or test condition Transition frequency fT 16 22 – GHz VCE = 3 V, IC = 30 mA, f = 1 GHz Collector base capacitance CCB – 0.32 0.45 pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.28 – Emitter base capacitance CEB 0.55 2 3 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Verified by random sampling Datasheet 5 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C. VB Top View Bias-T IN B E VC C E (Pin 1) Bias-T OUT Figure 2 Testing circuit Table 6 AC characteristics, f = 100 MHz Parameter Symbol Values Unit Min. Typ. Max.  –   26.5 20  – Power gain • Maximum power gain • Transducer gain   Gms |S21|2 Noise figure • Minimum noise figure   NFmin   0.7 Linearity • 3rd order intercept point at output • 1 dB compression point at output   OIP3 OP1dB   23.5 9.5 dBm Values Unit Table 7 VCE = 1.5 V, IC = 3 mA VCE = 2 V, IC = 3 mA VCE = 3 V, IC = 20 mA, ZS = ZL = 50 Ω AC characteristics, VCE = 3 V, f = 1.8 GHz Parameter Symbol Power gain • Maximum power gain • Transducer gain   Gms |S21|2 Noise figure • Minimum noise figure (table continues...)   NFmin Datasheet dB Note or test condition Min. Typ. Max.  –   17.5 15  –   1.1 6 dB Note or test condition IC = 20 mA IC = 5 mA Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics Table 7 (continued) AC characteristics, VCE = 3 V, f = 1.8 GHz Parameter Symbol Values Min. Linearity • 3rd order intercept point at output • 1 dB compression point at output Table 8   OIP3 OP1dB Symbol Power gain • Maximum power gain • Transducer gain   Gma |S21|2 Noise figure • Minimum noise figure   NFmin Datasheet Note or test condition   27.5 11.5 13 dBm ZS = ZL = 50 Ω, IC = 20 mA, IC = 20 mA, IC = 35 mA Values Unit Note or test condition Typ. Max. AC characteristics, VCE = 3 V, f = 3 GHz Parameter Note: Unit Min. Typ. Max.  –   12.5 10.5  –   1.2 dB IC = 20 mA IC = 5 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz. 7 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic AC diagrams 24 3-4 V 22 2V 20 1V 18 f / GHz 16 14 12 10 8 6 4 0 Figure 3 10 20 30 IC / mA 50 40 60 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 31 4V 27 3V 25 2V OIP3 / dBm 21 17 13 1V 9 5 Figure 4 Datasheet 0 5 10 15 20 25 30 IC / mA 35 40 45 50 55 3rd order intercept point OIP3 = f(IC), ZS = ZL = 50 Ω, f = 1.8 GHz, VCE = parameter 8 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 0.7 0.6 CCB / pF 0.5 0.4 0.3 0.2 0.1 00 Figure 5 2 4 6 8 VCB / V 10 12 14 Collector base capacitance CCB = f(VCB), f = 1 MHz 50 40 G / dB 30 Gms 20 |S21|² Gma 10 00 Figure 6 Datasheet 1 2 3 f / GHz 4 5 6 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 20 mA 9 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 24 0.9 22 20 18 1.8 G / dB 16 2.4 14 3 12 4 10 5 8 6 6 4 Figure 7 0 10 20 30 IC / mA 50 40 60 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 24 0.9 20 1.8 16 G / dB 2.4 3 12 4 5 8 4 0.5 Figure 8 Datasheet 6 1.0 1.5 2.0 2.5 3.0 VCE / V 3.5 4.0 4.5 Maximum power gain Gmax = f(VCE), IC = 20 mA, f = parameter in GHz 10 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics Source impedance for minimum noise figure ZS,opt = f(f) , VCE = 2 V, IC = parameter NFmin / dB Figure 9 IC = 35 mA IC = 5.0 mA IC = 4.0 mA IC = 3.0 mA f / GHz Figure 10 Datasheet Noise figure NFmin = f(f), VCE = 2 V, ZS = ZS,opt, IC = parameter 11 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Electrical characteristics 3 2.5 NFmin / dB 2 1.5 1 0.5 0 Figure 11 Note: Datasheet f = 3.5 GHz f = 1.9 GHz f = 0.9 GHz f = 0.45 GHz 0 10 20 30 40 IC / mA 50 60 70 Noise figure NFmin = f(IC), VCE = 2 V, ZS = ZS,opt, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 12 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Package information SOT343 Package information SOT343 0.15 -0.05 0.1 0.1 MIN. A 0.1 2.1 ±0.1 +0.10 0.3 -0.05 0.6 -0.05 +0.10 1 4 1.3 2 ±0.2 0.1 3 2 3x 0.15 0.2 0.1 MAX. 1.25 ±0.1 +0.10 A 0.9 ±0.1 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 12 Note: SOT343 package For package information including footprint, packing and assembly recommendation refer to: https://www.infineon.com/cms/en/product/packages/PG-SOT343/PG-SOT343-4-1 Datasheet 13 Revision 2.2 2023-06-20 BFP460 Surface mount wideband silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout, typical curve removed. Revision 2.1 2023-04-17 Updated product description and AC testing circuit figure. Revision 2.2 2023-06-20 Updated figures writing style. Datasheet 14 Revision 2.2 2023-06-20 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-06-20 Published by Infineon Technologies AG 81726 Munich, Germany   © 2023 Infineon Technologies AG All Rights Reserved.   Do you have a question about any aspect of this document? Email: erratum@infineon.com   Document reference IFX-iiu1524061082753 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 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