BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Product description
The BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolar
transistor (HBT).
Feature list
•
•
•
•
•
Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,
1.5 kV HBM ESD hardness
High transition frequency enables best in class noise performance at high frequencies:
NFmin = 1.2 dB at 5.5 GHz, 1.8 V, 8 mA
High gain Gma = 17 dB at 5.5 GHz, 1.8 V, 15 mA
OIP3 = 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA
Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding
collector resistor)
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
WLAN, WiMAX and UWB
Satellite communication systems: satellite radio (SDARs, DAB) and navigation systems (e.g. GPS, GLONASS,
BeiDou, Galileo)
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
BFP843 / BFP843H6327XTSA1
SOT343
1=B
2=E
3=C
4=E
Marking
Pieces / Reel
T2s
3000
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
v2.0
2018-09-26
BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
3.3
3.4
3.5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4
Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Datasheet
2
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Collector emitter voltage
Collector emitter voltage 1)
Collector base voltage 2)
VCEO
–
VCES
VCBO
Unit
Note or test condition
V
Open base
Max.
2.25
2.0
TA = -55 °C, open base
2.25
E-B short circuited
2.0
TA = -55 °C,
E-B short circuited
2.9
Open emitter
2.6
TA = -55 °C, open emitter
Base current
IB
-5
5
mA
–
Collector current
IC
–
55
RF input power
PRFin
–
20
dBm
ESD stress pulse
VESD
-1.5
1.5
kV
HBM, all pins, acc. to
JESD22-A114
Total power dissipation 3)
Ptot
–
125
mW
TS ≤ 99 °C
Junction temperature
TJ
–
150
°C
–
Storage temperature
TStg
-55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
2
3
VCES is similar to VCEO due to design.
VCBO is similar to VCEO due to design.
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
Datasheet
3
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Junction - soldering point
RthJS
Values
Min.
Typ.
Max.
–
405
–
Unit
Note or test condition
K/W
–
130
120
110
100
90
P
tot
[mW]
80
70
60
50
40
30
20
10
0
Figure 1
Datasheet
0
25
50
75
TS [°C]
100
125
150
Total power dissipation Ptot = f(TS)
4
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
V
IC = 1 mA, IB = 0,
open base
Collector emitter breakdown voltage
V(BR)CEO
2.25
2.6
–
Collector emitter leakage current
ICES
–
–
400 1) nA
VCE = 1.5 V, VBE = 0,
E-B short circuited
Collector base leakage current
ICBO
400 1)
VCB = 1.5 V, IE = 0,
open emitter
Emitter base leakage current
IEBO
10 1)
μA
VEB = 0.5 V, IC = 0,
open collector
DC current gain
hFE
450
–
VCE = 1.8 V, IC = 15 mA,
pulse measured
Unit
Note or test condition
pF
f = 1 MHz,
f = 1 GHz,
VCB = 1.8 V, VBE = 0,
emitter grounded
150
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
260
Values
Min.
Typ.
Max.
–
5.23
0.06
–
Collector base capacitance 2)
CCB
Collector emitter capacitance
CCE
0.5
f = 1 MHz,
VCE = 1.8 V, VBE = 0,
base grounded
Emitter base capacitance
CEB
0.73
f = 1 MHz,
VEB = 0.4 V, VCB = 0,
collector grounded
1
2
Maximum values not limited by the device but by the short cycle time of the 100% test
Including integrated feedback capacitance
Datasheet
5
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
VC
Top View
Bias-T
OUT
E
C
B
E
VB
Bias-T
(Pin 1)
IN
Figure 2
Testing circuit
Table 6
AC characteristics, VCE = 1.8 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gma
|S21|2
24.5
24.5
IC = 15 mA
Noise figure
•
Minimum noise figure
•
Associated gain
NFmin
Gass
0.9
22
IC = 8 mA
Linearity
• 3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
Datasheet
–
dB
dBm
24
7
6
IC = 15 mA, ZS = ZL = 50 Ω
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
Table 7
AC characteristics, VCE = 1.8 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
–
Gma
|S21|2
24
24
IC = 15 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.9
22
IC = 8 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
Table 8
dB
dBm
23.5
8
IC = 15 mA, ZS = ZL = 50 Ω
AC characteristics, VCE = 1.8 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Note or test condition
Max.
Power gain
•
Maximum power gain
•
Transducer gain
Gma
|S21|2
23.5
23
IC = 15 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.95
21
IC = 8 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
22.5
6
Table 9
–
Unit
–
dB
dBm
IC = 15 mA, ZS = ZL = 50 Ω
AC characteristics, VCE = 1.8 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
•
Maximum power gain
•
Transducer gain
Gma
|S21|2
22.5
22
IC = 15 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.95
20
IC = 8 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
Datasheet
–
dB
dBm
24
8.5
7
IC = 15 mA, ZS = ZL = 50 Ω
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
Table 10
AC characteristics, VCE = 1.8 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
•
Maximum power gain
•
Transducer gain
–
Gma
|S21|2
21.5
21
IC = 15 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
1.0
19.5
IC = 8 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
Table 11
dB
dBm
22
6.5
IC = 15 mA, ZS = ZL = 50 Ω
AC characteristics, VCE = 1.8 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Note or test condition
Max.
Power gain
•
Maximum power gain
•
Transducer gain
Gma
|S21|2
19.5
19
IC = 15 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
1.1
17.5
IC = 8 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
22.5
7
Table 12
–
Unit
–
dB
dBm
IC = 15 mA, ZS = ZL = 50 Ω
AC characteristics, VCE = 1.8 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
•
Maximum power gain
•
Transducer gain
Gma
|S21|2
17
15.5
IC = 15 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
1.2
15
IC = 8 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
Datasheet
–
dB
dBm
19.5
4
8
IC = 15 mA, ZS = ZL = 50 Ω
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
Table 13
AC characteristics, VCE = 1.8 V, f = 10 GHz
Parameter
Symbol
Values
Min.
Typ.
–
Unit
Note or test condition
Max.
Power gain
• Maximum power gain
• Transducer gain
Gma
|S21|2
13.5
8.5
IC = 15 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
1.85
9
IC = 8 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
Note:
Datasheet
–
dB
dBm
16
0
IC = 15 mA, ZS = ZL = 50 Ω
Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
9
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
3.4
Characteristic DC diagrams
IC [mA]
22
20
80µA
18
70µA
16
60µA
14
50µA
12
40µA
10
30µA
8
20µA
6
4
10µA
2
0
0
0.5
1
1.5
2
2.5
VCE [V]
Figure 3
Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter
3
hFE
10
2
10
−2
10
Figure 4
Datasheet
−1
10
0
10
Ic [mA]
1
10
2
10
DC current gain hFE = f(IC), VCE = 1.8 V
10
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
2
10
1
10
0
10
C
I [mA]
−1
10
−2
10
−3
10
−4
10
−5
10
Figure 5
0.5
0.55
0.6
0.65
0.7
0.75
VBE [V]
0.8
0.85
0.9
Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 1.8 V
0
10
−1
10
−2
10
B
I [mA]
−3
10
−4
10
−5
10
−6
10
−7
10
Figure 6
Datasheet
0.5
0.55
0.6
0.65
0.7
0.75
VBE [V]
0.8
0.85
0.9
Base current vs. base emitter forward voltage IB = f(VBE), VCE = 1.8 V
11
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
−6
10
−7
10
−8
IB [A]
10
−9
10
−10
10
−11
10
Figure 7
Datasheet
0.3
0.35
0.4
0.45
0.5
0.55
VEB [V]
0.6
0.65
0.7
Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 1.8 V
12
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
3.5
Characteristic AC diagrams
24
22
20
18
OIP3 [dBm]
16
14
12
10
1.5V, 2400MHz
1.8V, 2400MHz
1.5V, 5500MHz
1.8V, 5500MHz
8
6
4
2
0
5
10
15
20
IC [mA]
25
5
12
3
1 14 15
30
8 9 10 11
16 7
1
18
17
18
19
20
21
19
16
20
21
20
16
15
14
5 13
1
19
18
10
17
16
15
Datasheet
35
20
12
13 14 15
17
IC [mA]
25
15
8 9 0 1
1 1
7
6
19
35
Figure 9
30
3rd order intercept point at output OIP3 = f(IC), ZS = ZL = 50 Ω, VCE, f = parameters
18
Figure 8
0
17
18 19
12
1.2
16
15
14
13
1.4
17
18 19
16
15
14
13
12
1.6
VCE [V]
17
20
18 19
12
1.8
2
3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
13
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
35
−4 −3 −2
30
−1 0 1
2
1
3
2
3
4
6
5
4
7
20
4
2
1
10 0
−1
−2
−3
−4
−5
5 −6
1
1.2
6
5
4
3
7
6
5
3
IC [mA]
25
15
6
5
4
3
2
1
0
−1
−2
−3
−4
−5
−6
1.4
3
2
1
0
−1
−2
−3
−4
−5
1.6
1.8
2
VCE [V]
Figure 10
Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
26
24
22
20
Gma
18
|S21|2
G [dB]
16
14
12
10
8
6
4
2
0
Figure 11
Datasheet
0
1
2
3
4
5
6
f [GHz]
7
8
9
10
Gain Gma, IS21I2 = f(f), VCE = 1.8 V, IC = 15 mA
14
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
28
26
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
24
22
20
Gmax [dB]
18
3.50GHz
16
14
5.50GHz
12
10
10.00GHz
8
6
4
2
0
Figure 12
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
IC [mA]
Maximum power gain Gmax = f(IC), VCE = 1.8 V, f = parameter in GHz
28
26
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
24
Gmax [dB]
22
20
3.50GHz
18
5.50GHz
16
14
10.00GHz
12
10
0
0.5
1
1.5
2
2.5
VCE [V]
Figure 13
Datasheet
Maximum power gain Gmax = f(VCE), IC = 15 mA, f = parameter in GHz
15
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
1
1.5
0.5
11.0 12.0
0.4
10.0
11.0
10.0
9.0
0.3
3
9.0
8.0
0.2
4
8.0
5
7.0
0.1
0.1
0
2
12.0
7.0
6.0
6.0
5.0
5.0
0.03 to 12 GHz
10
4.0
0.2 0.3 0.4 0.5
3.0 1
2.0 1.0
4.0
1.5
2
3
4 5
3.0
−0.1
−10
1.0
2.0
0.03
0.03
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
8mA
15mA
−1
Figure 14
Input reflection coefficient S11 = f(f), VCE = 1.8 V, IC = 8 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.45 to 10 GHz
0.1
10
0.1
0
0.2 0.3 0.4 0.5
0.45
5.5
−0.1
3.5
2.4 1.9
0.9
1.5
1
0.45
2
3
4 5
3.5
−10
5.5
10.0
−0.2
−5
−4
10.0
−0.3
−3
−0.4
−0.5
−2
−1.5
−1
Figure 15
Datasheet
8mA
15mA
Source impedance for minimum noise figure ZS,opt = f(f), VCE = 1.8 V, IC = 8 / 15 mA
16
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
1
1.5
12.0
0.5
11.0
0.4
2
12.0
11.0
10.0
3
10.0
0.3
9.0
9.0
0.2
8.0
0.1
0.03 to 12 GHz
7.0
10
6.0
6.0
0
5
8.0
7.0
0.1
4
5.0
0.2 0.3 0.4 0.5
1
4.0
3.02.01.0
5.0
1.5
2
3
4 5
4.0
−0.1
−10
1.0
3.0
2.0
0.03
−0.2
0.03
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
8mA
15mA
−1
Figure 16
Output reflection coefficient S22 = f(f), VCE = 1.8 V, IC = 8 / 15 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
0.8
IC = 15mA
0.6
I = 8mA
C
0.4
0.2
0
Figure 17
Datasheet
0
1
2
3
4
5
6
f [GHz]
7
8
9
10
Noise figure NFmin = f(f), VCE = 1.8 V, ZS = ZS,opt, IC = 8 / 15 mA
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
3
f = 10GHz
2.8
2.6
f = 5.5GHz
2.4
f = 3.5GHz
2.2
f = 2.4GHz
NFmin [dB]
2
f = 0.9GHz
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
IC [mA]
Figure 18
Noise figure NFmin = f(IC), VCE = 1.8 V, ZS = ZS,opt, f = parameter in GHz
4
f = 10GHz
f = 5.5GHz
3.5
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
3
NF50 [dB]
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
IC [mA]
Figure 19
Note:
Datasheet
Noise figure NF50 = f(IC), VCE = 1.8 V, ZS = 50 Ω, f = parameter in GHz
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
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Robust low noise broadband pre-matched RF bipolar transistor
Package information SOT343
0.9 ±0.1
Package information SOT343
1.25 ±0.1
0.15 -0.05
+0.10
A
0.1
0.1 MIN.
0.1
2.1 ±0.1
A
2
1
3x
+0.10
0.3 -0.05
0.6 -0.05
+0.10
1.3
2 ±0.2
0.1
3
4
0.15
0.2
0.1 MAX.
4
MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [
]
Figure 20
Package outline
Figure 21
Foot print
TYP E CODE
NOTE OF MANUFACTURER
MONTH
YEAR
Figure 22
Marking layout example
4
0.2
2.3
8
2
P IN 1
INDEX MARKING
2.15
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [
Figure 23
Datasheet
1.1
]
Tape dimensions
19
v2.0
2018-09-26
BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
2.0
2018-26-09
New datasheet layout.
Datasheet
20
v2.0
2018-09-26
Trademarks
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Edition 2018-09-26
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG
All Rights Reserved.
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Document reference
IFX-yak1518781510491
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