BFR380FH6327XTSA1

BFR380F Low profile linear silicon NPN RF bipolar transistor Product description The BFR380F is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its high current and low noise characteristics make the device suitable for a broad range of applications as high as 3.5 GHz. It remains cost competitive without compromising on ease of use. Feature list • • • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 3 V, 8 mA High gain Gma = 13.5 dB at 1.8 GHz, 3 V, 40 mA OIP3 = 29 dBm at 1.8 GHz, 3 V, 40 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Low noise amplifiers (LNAs) for DVB-T/H LNAs for TV white space application Low noise, high linearity amplifiers for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR380F / BFR380FH6327XTSA1 TSFP-3-1 1=B FCs 3000 2=E 3=C Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package information TSFP-3-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. – Unit Note or test condition V Open base Max. Collector emitter voltage VCEO 6 Collector emitter voltage VCES 15 E-B short circuited Collector base voltage VCBO 15 Open emitter Emitter base voltage VEBO 2 Open collector Base current IB 14 Collector current IC 80 Total power dissipation 1) Ptot Junction temperature TJ Storage temperature TStg mA – 380 mW TS ≤ 95 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point Values RthJS Min. Typ. Max. – 145 – Unit Note or test condition K/W – 400 mW Ptot 300 200 100 00 15 30 45 60 75 90 105 120 °C 150 TS Figure 1 Datasheet Total power dissipation Ptot = f(Ts) 4 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Thermal characteristics Ptotmax/PtotDC 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 010 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Figure 2 Permissible Pulse Load Ptot,max / Ptot,DC = f(tp) RthJS 10 3 K/W 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 110 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Figure 3 Permissible Pulse Load RthJS = f(tp) Datasheet 5 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Unit Note or test condition Max. Collector emitter breakdown voltage V(BR)CEO 6 9 – V IC = 1 mA, IB = 0, open base Collector emitter leakage current ICES – 1 30 2) nA VCE = 5 V, VBE = 0, E-B short circuited – 1000 2) VCE = 15 V, VBE = 0, E-B short circuited 30 2) VCB = 5 V, IE = 0, open emitter 1 500 2) VEB = 1 V, IC = 0, open collector 120 160 VCE = 3 V, IC = 40 mA, pulse measured Collector base leakage current ICBO Emitter base leakage current IEBO DC current gain hFE 90 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Transition frequency fT 11 14 – GHz VCE = 3 V, IC = 40 mA, f = 1 GHz Collector base capacitance CCB – 0.5 0.7 pF VCB = 5 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.2 – Emitter base capacitance CEB 1 2 VCE = 5 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 6 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VCE Bias-T RFOUT 3 VBE RFIN 1 Bias-T 2 GND Figure 4 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 1.8 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure NFmin – dB IC = 40 mA IC = 8 mA dBm 29 17 19.5 Symbol IC = 40 mA, ZS = ZL = 50 Ω, ZS = ZS,opt, ZL = ZL,opt Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure NFmin Datasheet – AC characteristics, VCE = 3 V, f = 3 GHz Parameter Note: 13.5 11 Note or test condition Max. 1.1 Linearity OIP3 • 3rd order intercept point at output OP • 1 dB gain compression point at output 1dB OP1dB Table 7 Typ. Unit – Typ. 9.5 7 1.6 Unit Note or test condition Max. – dB IC = 40 mA IC = 8 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz. 7 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic AC diagrams 16 GHz 14 fT 5V 3V 12 2V 10 1V 8 0.7V 6 40 10 20 30 40 50 60 70 80 mA 100 IC Figure 5 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter Figure 6 3rd order intercept point OIP3 = f(IC), ZS = ZL = 50 Ω, f = 900 MHz, VCE = parameter Datasheet 8 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 32 dBm 28 4V IP3 3V 24 2V 20 16 1V 12 8 40 10 20 30 40 50 60 70 mA 90 IC Figure 7 3rd order intercept point OIP3 = f(IC), ZS = ZL = 50 Ω, f = 1.8 GHz, VCE = parameter 1.6 pF Ccb 1.2 0.8 0.4 00 2 4 6 8 10 12 V 16 VCB Figure 8 Datasheet Collector base capacitance CCB = f(VCB), f = 1 MHz 9 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 15.0 dB 14.0 5V 13.0 G 3V 12.0 2V 11.0 10.0 1V 9.0 8.0 0.7V 7.0 0 10 20 30 40 50 60 70 80 mA 100 IC Figure 9 Gain Gma, Gms = f(IC), f = 1.8 GHz, VCE = parameter 40 dB Ic = 40mA G 30 5V 2V 1V 0.7V 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5 f Figure 10 Datasheet Gain IS21I2 = f(f), IC = 40 mA, VCE = parameter 10 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 45 dB Ic = 40mA 35 30 G 5V 2V 1V 0.7V 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5 f Figure 11 Gain Gma, Gms = f(f), IC = 40 mA, VCE = parameter 22 dB 0.9GHz 19 G 17 15 13 1.8GHz 11 2.4GHz 9 3GHz 7 4GHz 5 0 20 40 60 80 mA 120 IC Figure 12 Datasheet Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 11 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 21 dB Ic = 40mA 0.9GHz Gmax 19 18 17 S21 0.9GHz G 16 15 14 Gmax1.8GHz 13 12 11 S21 1.8GHz 10 9 8 7 0 1 2 3 4 5 6 V 8 VCE Figure 13 Maximum power gain Gmax = f(VCE), transducer gain IS21I2 = f(f), IC = 40 mA, f = parameter in GHz Figure 14 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 8 / 40 mA Datasheet 12 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics Figure 15 Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 8 / 40 mA 3.5 3 2.5 F [dB] 2 1.5 f = 4G Hz 1 f = 3G Hz f = 2.4G Hz f = 1.8G Hz f = 0.9G Hz 0.5 0 0 10 20 30 40 50 60 70 80 I [mA ] c Figure 16 Datasheet Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz 13 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 4 3.5 3 F [dB] 2.5 2 1.5 Z = 50Ω S 1 Z =Z S S opt 0.5 0 0 10 20 30 40 50 60 70 80 I [mA] c Figure 17 Note: Datasheet Noise figure NFmin = f(IC), ZS = ZS,opt, NF50 = f(IC), ZS = 50 Ω, VCE = 3 V, f = 1.8 GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 14 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Package information TSFP-3-1 4 Package information TSFP-3-1 Figure 18 Package outline Figure 19 Foot print TYP E CODE NOTE OF MANUFACTURER P IN 1 Figure 20 Marking layout example Figure 21 Tape information Datasheet 15 Revision 2.0 2019-01-25 BFR380F Low profile linear silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout, typical curves removed. Datasheet 16 Revision 2.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-bfl1526274633746 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury