BFR843EL3E6327XTSA1

BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Product description The BFR843EL3 is a low noise dual band pre-matched transistor in a low profile package for high speed and low power consumption applications. Feature list • • • • • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and 1 kV HBM ESD hardness High transition frequency enables best in class noise performance at high frequencies: NFmin = 1 dB at 2.4 GHz, 1.8 V, 8 mA and 1.15 dB at 5.5 GHz, 1.8 V, 8 mA High gain Gms = 24 dB at 2.4 GHz, 1.8 V, 15 mA and 21.5 dB at 5.5 GHz, 1.8 V, 15 mA OIP3 = 20.5 dBm at 2.4 GHz, 1.8 V, 15 mA and 20.5 dBm at 5.5 GHz, 1.8 V, 15 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, broadband LTE or WiMAX LNA Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo...) and satellite C-band LNB (1st and 2nd stage LNA) Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR843EL3 / BFR843EL3E6327XTSA1 TSLP-3-10 1=B T2 15000 2=C 3=E Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package information TSLP-3-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector emitter voltage 1) Collector base voltage 2) VCEO – VCES VCBO Unit Note or test condition V Open base Max. 2.25 2.0 TA = -55 °C, open base 2.25 E-B short circuited 2.0 TA = -55 °C, E-B short circuited 2.9 Open emitter 2.6 TA = -55 °C, open emitter Base current IB -1 5 Collector current IC – 55 RF input power PRFin ESD stress pulse VESD Total power dissipation 3) Ptot Junction temperature TJ Storage temperature TStg mA 20 dBm f = 1.9 GHz, matched to 50 Ω -1 1 kV HBM, all pins, acc. to JESD22-A114 – 125 mW TS ≤ 103 °C 150 °C -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 2 3 VCES is similar to VCEO due to design. VCBO is similar to VCEO due to design. TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Unit Min. Typ. Max. – 375 – Note or test condition K/W 130 120 110 100 90 P tot [mW] 80 70 60 50 40 30 20 10 0 Figure 1 Datasheet 0 25 50 75 TS [°C] 100 125 150 Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 – Collector emitter leakage current ICES – – 400 1) nA VCE = 1.5 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 400 1) VCB = 1.5 V, IE = 0, open emitter Emitter base leakage current IEBO 10 1) DC current gain hFE 230 – 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 360 260 μA 580 – Values Min. Typ. Max. – 5.26 0.07 – VEB = 0.5 V, IC = 0, open collector VCE = 1.8 V, IC = 1 mA VCE = 1.8 V, IC = 15 mA Pulse measured Unit Note or test condition pF f = 1 MHz f = 1 GHz VCB = 1.8 V, VBE = 0, emitter grounded Collector base capacitance 2) CCB Collector emitter capacitance CCE 0.42 f = 1 MHz, VCE = 1.8 V, VBE = 0, base grounded Emitter base capacitance CEB 0.66 f = 1 MHz, VEB = 0.4 V, VCB = 0, collector grounded 1 2 Maximum values not limited by the device but by the short cycle time of the 100% test. Including integrated feedback capacitance Datasheet 5 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. 3 VB VC Bias-T In Bias-T GND 1 RFIn RFOut Out 2 Figure 2 Testing circuit Table 6 AC characteristics, VCE = 1.8 V, f = 450 MHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – 25.5 24.5 23 7.5 6 Note or test condition Max. – dB 0.95 22.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Datasheet Typ. Unit IC = 15 mA IC = 8 mA dBm ZS = ZL = 50 Ω, IC = 15 mA v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics Table 7 AC characteristics, VCE = 1.8 V, f = 900 MHz Parameter Symbol Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.95 22 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 21.5 7 Table 8 – 25 24 Symbol Max. – dB IC = 15 mA IC = 8 mA dBm Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 0.95 21.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 21.5 7 ZS = ZL = 50 Ω, IC = 15 mA – 24.5 23 Unit Note or test condition Max. – dB IC = 15 mA IC = 8 mA dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 1.8 V, f = 1.9 GHz Parameter Symbol Values Min. – Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 1 21 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 21 7 Datasheet Note or test condition AC characteristics, VCE = 1.8 V, f = 1.5 GHz Parameter Table 9 Unit 7 24.5 22.5 Unit Note or test condition Max. – dB IC = 15 mA IC = 8 mA dBm ZS = ZL = 50 Ω, IC = 15 mA v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics Table 10 AC characteristics, VCE = 1.8 V, f = 2.4 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass Typ. – 24 22 dB IC = 15 mA IC = 8 mA dBm 20.5 6 Symbol Values Min. Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.05 18.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 20.5 6 ZS = ZL = 50 Ω, IC = 15 mA – 23 19.5 Unit Note or test condition Max. – dB IC = 15 mA IC = 8 mA dBm ZS = ZL = 50 Ω, IC = 15 mA AC characteristics, VCE = 1.8 V, f = 5.5 GHz Parameter Symbol Values Min. – Typ. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass 1.15 15.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB 20.5 4.5 Datasheet – AC characteristics, VCE = 1.8 V, f = 3.5 GHz Parameter Table 12 Note or test condition Max. 1 20 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 11 Unit 8 21.5 16.5 Unit Note or test condition Max. – dB IC = 15 mA IC = 8 mA dBm ZS = ZL = 50 Ω, IC = 15 mA v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics Table 13 AC characteristics, VCE = 1.8 V, f = 10 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gma |S21|2 Noise figure • Minimum noise figure • Associated gain NFmin Gass – Datasheet 14.5 10.5 17 1.5 Note or test condition Max. – dB 1.35 10.5 Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Note: Typ. Unit IC = 15 mA IC = 8 mA dBm ZS = ZL = 50 Ω, IC = 15 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 9 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 22 20 90µA 18 80µA 16 70µA 60µA IC [mA] 14 50µA 12 40µA 10 30µA 8 6 20µA 4 10µA 2 0 0 0.5 1 1.5 2 2.5 VCE [V] Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter 3 hFE 10 2 10 −2 10 Figure 4 Datasheet −1 10 0 10 Ic [mA] 1 10 2 10 DC current gain hFE = f(IC), VCE = 1.8 V 10 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics 2 10 1 10 0 10 C I [mA] −1 10 −2 10 −3 10 −4 10 −5 10 Figure 5 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 1.8 V 0 10 −1 10 −2 10 B I [mA] −3 10 −4 10 −5 10 −6 10 −7 10 Figure 6 Datasheet 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Base current vs. base emitter forward voltage IB = f(VBE), VCE = 1.8 V 11 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics −6 10 −7 10 −8 IB [A] 10 −9 10 −10 10 −11 10 Figure 7 Datasheet 0.3 0.35 0.4 0.45 0.5 0.55 VEB [V] 0.6 0.65 0.7 Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 1.8 V 12 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 24 22 20 18 OIP3 [dBm] 16 1.5V, 2400MHz 1.8V, 2400MHz 1.5V, 5500MHz 1.8V, 5500MHz 14 12 10 8 6 4 2 0 5 10 15 20 IC [mA] 25 30 35 3rd order intercept point OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameter 35 7 8 7 16 17 9 10 11 2 3 1 1 14 30 15 16 17 9 10 11 12 13 14 10 16 5 15 1 22 21 15 17 19 20 IC [mA] 20 18 19 20 21 22 19 20 21 18 25 15 16 17 18 23 Figure 8 0 18 22 21 20 19 20 19 17 1.2 16 15 1.4 18 17 16 15 1.6 18 17 1.8 19 2 VCE [V] Figure 9 Datasheet 3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz 13 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics 35 4 5 6 2 3 5 6 2 20 3 7 4 7 IC [mA] −4 −3 30 −2 −1 0 25 1 4 5 15 3 10 −1 −4 −5 1.2 1 −1 −2 −3 1.4 6 5 4 3 2 1 0 7 6 4 2 5 2 3 −1 0 1 −4 −5 −1 −2 −3 3 2 1 0 5 4 −3 −4 1.6 1 0 −2 1.8 2 VCE [V] Figure 10 Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz 30 28 26 G ms 24 G [dB] 22 20 G ma 18 2 |S | 21 16 14 12 10 8 Figure 11 Datasheet 0 1 2 3 4 5 6 7 f [GHz] 8 9 10 11 12 Gain Gma, Gms, IS21I2 = f(f), VCE = 1.8 V, IC = 15 mA 14 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics 30 28 26 G max [dB] 24 22 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 20 18 16 14 12 10 5.50GHz 8 6 4 2 10.00GHz 0 12.00GHz 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 I [mA] C Figure 12 Maximum power gain Gmax = f(IC), VCE = 1.8 V, f = parameter 30 28 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 26 24 G max [dB] 22 20 18 16 10.00GHz 14 12.00GHz 12 10 8 0 0.5 1 1.5 V Figure 13 Datasheet CE 2 2.5 [V] Maximum power gain Gmax = f(VCE), IC = 15 mA, f = parameter 15 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 12.0 11.0 10.0 12.0 9.0 11.0 8.0 0.5 0.210.00.3 0.4 7.0 9.0 6.0 8.0 5.0 4.0 7.0 3.0 2.0 6.0 0.1 0.1 0 −0.1 0.03 to 12 GHz 10 1 1.5 1.0 2 3 −10 1.0 5.0 0.03 0.03 4.0 −0.2 4 5 2.0 3.0 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 8mA 15mA −1 Figure 14 Input reflection coefficient S11 = f(f), VCE =1.8 V, IC = 8 / 15 mA 1 1.5 2 0.5 0.4 3 0.3 4 0.2 5 0.45 to 10 GHz 0.1 5.5 8.0 0.1 0 0.2 0.3 0.4 0.5 10.0 3.5 2.4 1.9 1.5 10 0.9 0.45 2 5.5 3.5 1 0.45 1.5 8.0 3 4 5 10.0 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 −1 Figure 15 Datasheet 8mA 15mA Source impedance for minimum noise figure ZS,opt = f(f), VCE = 1.8 V, IC = 8 / 15 mA 16 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.03 to 12 GHz 0.1 12.0 12.0 11.0 11.0 10.0 0.2 0.5 10.00.3 0.49.0 8.0 9.0 7.0 8.0 6.0 5.0 7.0 4.0 3.0 6.0 0.1 0 −0.1 10 1 1.5 4.0 3 4 5 1.0 2.0 −10 1.0 5.0 −0.2 2 0.03 0.03 −5 2.0 3.0 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 8mA 15mA −1 Figure 16 Output reflection coefficient S22 = f(f), VCE = 1.8 V, IC = 8 / 15 mA 1.6 1.5 1.4 NFmin [dB] 1.3 1.2 1.1 1 IC = 15mA 0.9 0.8 IC = 8mA 0.7 0.6 Figure 17 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Noise figure NFmin = f(f), VCE = 1.8 V, ZS = ZS,opt, IC = 8 / 15 mA 17 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Electrical characteristics 3 2.8 f = 10GHz 2.6 2.4 f = 5.5GHz 2.2 f = 3.5GHz NFmin [dB] 2 f = 2.4GHz 1.8 f = 0.9GHz 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 IC [mA] Figure 18 Noise figure NFmin = f(IC), VCE = 1.8 V, ZS = ZS,opt, f = parameter 4 f = 10GHz 3.5 f = 5.5GHz 3 f = 3.5GHz f = 2.4GHz NF50 [dB] 2.5 f = 0.9GHz 2 1.5 1 0.5 0 0 5 10 15 20 25 IC [mA] Figure 19 Note: Datasheet Noise figure NF50 = f(IC), VCE = 1.8 V, ZS = 50 Ω, f = parameter The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 18 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Package information TSLP-3-10 4 Package information TSLP-3-10 Figure 20 Package outline Figure 21 Foot print Figure 22 Marking layout example Figure 23 Tape dimensions Note: Datasheet See our Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages . The marking layout is an example. For the real marking code refer to the device information on the first page. The number of characters shown in the layout example is not necessarily the real one. The marking layout can consist of less characters. 19 v2.0 2018-09-26 BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-26 New datasheet layout. Datasheet 20 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-nea1519203763194 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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