BSC012N06NSATMA1

BSC012N06NS MOSFET OptiMOSTM5Power-Transistor,60V TSON-8-3 8 7 Features 5 6 6 5 •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.2 mΩ ID 100 A QOSS 122 nC QG(0V..10V) 115 nC 2 4 3 3 4 2 1 S1 8D S2 7D S3 6D G4 5D Package Marking RelatedLinks BSC012N06NS TSON-8-3 012N06N - 1 8 Pin 1 Type/OrderingCode Final Data Sheet 7 Rev.2.1,2018-12-11 OptiMOSTM5Power-Transistor,60V BSC012N06NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2018-12-11 OptiMOSTM5Power-Transistor,60V BSC012N06NS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 100 100 36 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 911 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 214 3.0 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics atTj=25°C,unlessotherwisespecified Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.35 0.7 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2018-12-11 OptiMOSTM5Power-Transistor,60V BSC012N06NS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=147µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.9 1.2 1.2 1.7 mΩ VGS=10V,ID=50A VGS=6V,ID=12.5A Gate resistance1) RG - 2.2 3.3 Ω - Transconductance gfs 85 170 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 8300 11000 pF VGS=0V,VDS=30V,f=1MHz Coss - 1800 2400 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 71 120 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 11 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 15 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 54 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 31 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 35 - nC VDD=30V,ID=50A,VGS=0to10V Qg(th) - 23 - nC VDD=30V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 21 31 nC VDD=30V,ID=50A,VGS=0to10V Switching charge Qsw - 32 - nC VDD=30V,ID=50A,VGS=0to10V Gate charge total Qg - 115 143 nC VDD=30V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.2 - V VDD=30V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 102 - nC VDS=0.1V,VGS=0to10V Qoss - 122 163 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2018-12-11 OptiMOSTM5Power-Transistor,60V BSC012N06NS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 100 A TC=25°C - 400 A TC=25°C - 0.8 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 41 82 ns VR=30V,IF=50A,diF/dt=100A/µs Qrr - 170 340 nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.1,2018-12-11 OptiMOSTM5Power-Transistor,60V BSC012N06NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 250 120 100 200 80 ID[A] Ptot[W] 150 60 100 40 50 0 20 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 0.5 1 µs 10 µs 102 100 µs 0.2 10-1 1 ms 0.1 ZthJC[K/W] ID[A] 10 ms DC 101 0.05 0.02 0.01 10-2 single pulse 100 10-1 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2018-12-11 OptiMOSTM5Power-Transistor,60V BSC012N06NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 2.5 8V 7V 10 V 350 2.0 6V 5V 300 5.5 V RDS(on)[mΩ] ID[A] 250 5V 200 150 5.5 V 1.5 6V 7V 1.0 8V 10 V 100 0.5 50 0 0.0 0.5 0.0 1.0 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 250 320 200 240 150 ID[A] gfs[S] 400 160 100 175 °C 25 °C 80 0 50 0 1 2 3 4 5 6 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.1,2018-12-11 OptiMOSTM5Power-Transistor,60V BSC012N06NS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 2.5 4.0 3.5 2.0 3.0 1470 µA 2.5 1.5 VGS(th)[V] RDS(on)[mΩ] max 1.0 147 µA 2.0 1.5 typ 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 °C 175 °C 175 °C, max 25 °C, max 104 103 102 IF[A] C[pF] Ciss Coss 101 102 Crss 101 0 10 20 30 40 50 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.1,2018-12-11 OptiMOSTM5Power-Transistor,60V BSC012N06NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 12 V 48 V 25 °C 100 °C 101 VGS[V] IAV[A] 8 6 4 150 °C 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 120 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 68 66 64 VBR(DSS)[V] 62 60 58 56 54 52 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2018-12-11 OptiMOSTM5Power-Transistor,60V BSC012N06NS 5PackageOutlines DIMENSION A b b1 c D D1 E E1 E2 E3 e K2 L L1 L2 DOCUMENT NO. Z8B00187559 MILLIMETERS MIN. MAX. 0.34 - 1.10 0.54 0.05 REVISION 01 SCALE 0.20 4.90 4.25 5.90 4.00 3.14 0.20 0 5.10 4.45 6.10 4.20 3.34 0.40 10:1 1 2mm EUROPEAN PROJECTION 1.27 (0.37) 0.60 0.43 0.80 0.63 ISSUE DATE 14.12.2017 (0.25) Figure1OutlineTSON-8-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2018-12-11 OptiMOSTM5Power-Transistor,60V BSC012N06NS RevisionHistory BSC012N06NS Revision:2018-12-11,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-03-08 Release of final version 2.1 2018-12-11 Rev. 2.0 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2018-12-11