BSC014N06NSATMA1

BSC014N06NS MOSFET OptiMOSTMPower-Transistor,60V PG-TDSON-8 8 Features 5 7 6 6 •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection 7 5 8 Pin 1 4 2 3 3 4 2 1 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.45 mΩ ID 240 A QOSS 100 nC QG(0V..10V) 89 nC Drain Pin 5-8 Gate Pin 4 Source Pin 1-3 *1: Internal body diode Type/OrderingCode Package BSC014N06NS PG-TDSON-8 FL 1) *1 Marking RelatedLinks 014N06NS - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 240 152 30 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W2) - 960 A TC=25°C - - 580 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 156 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.5 0.8 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=120µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.2 1.6 1.45 2.2 mΩ VGS=10V,ID=50A VGS=6V,ID=12.5A Gate resistance1) RG - 2 3 Ω - Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 6500 8125 pF VGS=0V,VDS=30V,f=1MHz Coss - 1500 1875 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 59 118 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 23 - ns VDD=30V,VGS=10V,ID=30A, RG,ext,ext=2Ω Rise time tr - 10 - ns VDD=30V,VGS=10V,ID=30A, RG,ext,ext=2Ω Turn-off delay time td(off) - 43 - ns VDD=30V,VGS=10V,ID=30A, RG,ext,ext=2Ω Fall time tf - 11 - ns VDD=30V,VGS=10V,ID=30A, RG,ext,ext=2Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 28 - nC VDD=30V,ID=50A,VGS=0to10V Qg(th) - 18 - nC VDD=30V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 16 21 nC VDD=30V,ID=50A,VGS=0to10V Switching charge Qsw - 26 - nC VDD=30V,ID=50A,VGS=0to10V Gate charge total Qg - 89 104 nC VDD=30V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.3 - V VDD=30V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 78 - nC VDS=0.1V,VGS=0to10V Qoss - 100 125 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 156 A TC=25°C - 960 A TC=25°C - 0.8 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 52 83 ns VR=30V,IF=50A,diF/dt=100A/µs Qrr - 139 - nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 180 250 160 200 140 120 ID[A] Ptot[W] 150 100 80 100 60 40 50 20 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 0.5 10 µs 2 10 100 µs 0.2 10 10 DC ID[A] 0.1 ZthJC[K/W] 1 ms 10 ms 1 -1 0 10 0.05 0.02 0.01 10-2 single pulse 10-1 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1000 4.0 5V 10 V 5.5 V 3.5 7V 800 3.0 2.5 RDS(on)[mΩ] ID[A] 600 6V 400 2.0 6V 1.5 7V 5.5 V 10 V 1.0 200 5V 0 0 1 2 3 4 0.5 0.0 5 0 100 200 VDS[V] 300 400 500 80 100 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 1000 250 800 200 25 °C 600 150 ID[A] gfs[S] 150 °C 400 100 200 50 0 0 2 4 6 8 10 0 0 VGS[V] 40 60 ID[A] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS Diagram9:Drain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.8 3.5 2.4 3.0 2.0 2.5 1200 µA 1.6 max 1.2 VGS(th)[V] RDS(on)[mΩ] 120 µA typ 2.0 1.5 0.8 1.0 0.4 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 0.0 -75 175 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss Coss 102 IF[A] C[pF] 103 102 101 Crss 101 0 20 40 60 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 12 V 25 °C 100 °C 48 V 8 VGS[V] IAV[A] 125 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Min.drain-sourcebreakdownvoltage Diagram Gate charge waveforms 65 64 63 VBR(DSS)[V] 62 61 60 59 58 57 -75 -50 -25 0 25 50 75 100 125 150 175 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS 5PackageOutlines PACKAGE - GROUP NUMBER: DIMENSIONS A A1 b c D D1 D2 D3 E E1 E2 e L L1 aaa PG-TDSON-8-U04 MILLIMETERS MIN. MAX. 0.90 1.20 0 0.05 0.26 0.54 0.15 0.35 4.80 5.35 3.70 4.40 2.94 3.25 5.05 5.38 5.70 6.10 3.43 3.76 0.69 0.89 1.27 0.45 0.66 0.69 0.90 0.10 0.25 Figure1OutlinePG-TDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS Figure2OutlineTape(TDSON-8FL) Final Data Sheet 11 Rev.2.5,2022-08-09 OptiMOSTMPower-Transistor,60V BSC014N06NS RevisionHistory BSC014N06NS Revision:2022-08-09,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2014-10-16 Rev.2.3 2.4 2020-02-28 Update current rating 2.5 2022-08-09 Update outline drawing and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.5,2022-08-09