BSC014N04LS
MOSFET
OptiMOSTMPower-MOSFET,40V
TDSON-8FL(enlargedsourceinterconnection)
8
Features
•Optimizedforsynchronousrectification
•Verylowon-stateresistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
1.4
mΩ
ID
198
A
Qoss
54
nC
Qg(0V..10V)
61
nC
Type/OrderingCode
Package
BSC014N04LS
TDSON-8 FL
1)
Marking
014N04LS
1
2
7
6
5
5
3
4
4
3
2
6
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.7,2020-05-15
OptiMOSTMPower-MOSFET,40V
BSC014N04LS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.7,2020-05-15
OptiMOSTMPower-MOSFET,40V
BSC014N04LS
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
198
125
170
107
32
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W2)
-
792
A
TC=25°C
-
-
50
A
TC=25°C
EAS
-
-
170
mJ
ID=50A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
96
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current1)
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
0.8
1.3
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area2)
RthJA
-
-
50
K/W
-
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.7,2020-05-15
OptiMOSTMPower-MOSFET,40V
BSC014N04LS
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.5
1.1
1.9
1.4
mΩ
VGS=4.5V,ID=50A
VGS=10V,ID=50A
Gate resistance1)
RG
0.45
0.9
1.8
Ω
-
Transconductance
gfs
120
230
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
4300
6020
pF
VGS=0V,VDS=20V,f=1MHz
Coss
-
1200
1680
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
Crss
-
100
200
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
8
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6Ω
Rise time
tr
-
9
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6Ω
Turn-off delay time
td(off)
-
35
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6Ω
Fall time
tf
-
7
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
11
-
nC
VDD=20V,ID=50A,VGS=0to10V
Qg(th)
-
6.9
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate to drain charge
Qgd
-
9.8
14
nC
VDD=20V,ID=50A,VGS=0to10V
Switching charge
Qsw
-
14
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
61
85
nC
VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.5
-
V
VDD=20V,ID=50A,VGS=0to10V
Gate charge total1)
Qg
-
31
44
nC
VDD=20V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
24
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
54
76
nC
VDD=20V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.7,2020-05-15
OptiMOSTMPower-MOSFET,40V
BSC014N04LS
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Values
Unit
Note/TestCondition
96
A
TC=25°C
-
792
A
TC=25°C
-
0.82
1
V
VGS=0V,IF=50A,Tj=25°C
trr
-
32
64
ns
VR=20V,IF=50A,diF/dt=400A/µs
Qrr
-
44
-
nC
VR=20V,IF=50A,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Reverse recovery time
Reverse recovery charge
Diode forward voltage
1)
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.7,2020-05-15
OptiMOSTMPower-MOSFET,40V
BSC014N04LS
4Electricalcharacteristicsdiagrams
Diagram2:Draincurrent
120
240
100
200
80
160
ID[A]
Ptot[W]
Diagram1:Powerdissipation
60
120
40
80
20
40
0
0
40
80
120
0
160
0
20
40
60
TC[°C]
80
100
120
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
160
101
10
10 µs
102
1 µs
100
100 µs
0.5
0.2
101
ZthJC[K/W]
1 ms
ID[A]
140
TC[°C]
10 ms
DC
0.1
10-1
0.05
0.02
0.01
100
10-1
10-1
single pulse
10-2
100
101
102
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.7,2020-05-15
OptiMOSTMPower-MOSFET,40V
BSC014N04LS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
400
3.0
10 V
350
5V
4.5 V
2.8 V
4V
2.5
3.5 V
300
3.2 V
3V
RDS(on)[mΩ]
ID[A]
250
3V
200
150
2.0
3.2 V
3.5 V
1.5
4V
4.5 V
5V
2.8 V
100
10 V
1.0
50
0
0
1
0.5
2
0
10
20
VDS[V]
30
40
50
80
100
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
320
320
240
ID[A]
gfs[S]
240
160
160
80
80
150 °C
0
0
1
25 °C
2
3
4
5
0
0
VGS[V]
40
60
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.7,2020-05-15
OptiMOSTMPower-MOSFET,40V
BSC014N04LS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
2.50
2.5
max
2.25
typ
2.00
2.0
1.50
1.5
VGS(th)[V]
RDS(on)[mΩ]
1.75
1.25
1.00
250 µA
1.0
0.75
0.50
0.5
0.25
0.00
-60
-20
20
60
100
0.0
-60
140
-20
20
Tj[°C]
60
100
140
Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
Coss
102
IF[A]
C[pF]
103
Crss
2
101
10
101
0
10
20
30
40
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
8
Rev.2.7,2020-05-15
OptiMOSTMPower-MOSFET,40V
BSC014N04LS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
20 V
10
8V
32 V
25 °C
8
125 °C
VGS[V]
IAV[A]
100 °C
101
6
4
2
100
100
101
102
103
tAV[µs]
0
0
20
40
60
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
46
44
42
VBR(DSS)[V]
40
38
36
34
32
30
-60
-20
20
60
100
140
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.7,2020-05-15
OptiMOSTMPower-MOSFET,40V
BSC014N04LS
5PackageOutlines
DOCUMENT NO.
Z8B000193699
REVISION
03
DIMENSION
A
A1
b
D
D1
D2
E
E1
E2
e
L
M
MILLIMETERS
MIN.
MAX.
0.90
1.20
0.15
0.35
0.26
0.54
4.80
5.35
3.70
4.40
0.02
0.23
5.70
6.10
5.90
6.42
3.88
4.42
1.27
0.69
0.90
0.45
0.69
SCALE 10:1
0
1
2
3mm
EUROPEAN PROJECTION
ISSUE DATE
19.06.2019
Figure1OutlineTDSON-8FL,dimensionsinmm
Final Data Sheet
10
Rev.2.7,2020-05-15
OptiMOSTMPower-MOSFET,40V
BSC014N04LS
PG-TDSON-8FL: RecommenGHd BoDrdpads & Apertures
Figure 2
Final Data Sheet
Outline Boardpads (TDSON-8 FL)
11
Rev.2.7,2020-05-15
OptiMOS TM Power-MOSFET , 40 V
BSC014N04LS
Figure 3
Final Data Sheet
Outline Tape (TDSON-8 FL )
12
Rev. 2.7, 2020-05-15
OptiMOS TM Power-MOSFET , 40 V
BSC014N04LS
Revision History
BSC014N04LS
Revision: 2020-05-15, Rev. 2.7
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2012-10-11
Release of final version
2.1
2012-10-12
New diagram titles.
2.2
2013-02-27
Rev. 2.1
2.4
2016-05-04
Update footnotes and insert max values
2.5
2017-03-27
Update Qrr
2.6
2020-02-07
Update package drawings
2.7
2020-05-15
Update current rating
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously
improve the quality of this document. Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Published by
Infineon Technologies AG
81726 München, Germany
© 2020 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the
product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for the intended application and the completeness of the product
information given in this document with respect to such application.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
13
Rev. 2.7, 2020-05-15