BSC026N02KSG

BSC026N02KSG MOSFET OptiMOSª2Power-Transistor,20V SuperSO8 8 Features •Forfastswitchingconvertersandsync.rectification •QualifiedaccordingtoJEDEC1)fortargetapplications •SuperLogiclevel2.5Vrated;N-channel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avalancherated •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 20 V RDS(on),max 2.6 mΩ ID 134 A Type/OrderingCode Package BSC026N02KS G PG-TDSON-8 1) 5 6 2 Marking 026N02KS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 134 85 102 65 25 A VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=2.5V,TC=25°C VGS=2.5V,TC=100°C VGS=4.5V,TA=25°C,RthJA=45K/W2) Min. Typ. Max. - Continuous drain current1) ID - Pulsed drain current ID,pulse - - 536 A TC=25°C3) Avalanche energy, single pulse EAS - - 550 mJ ID=50A,RGS=25Ω Reversediodedv/dt dv/dt - - 6 kV/µs ID=50A,VDS=16V,di/dt=200A/µs, Tj,max=150°C Gate source voltage VGS -12 - 12 V - Power dissipation Ptot - - 78 2.8 - TC=25°C TA=25°C,RthJA=45K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 1.6 K/W - Thermal resistance, junction - case, top RthJC - - 18 K/W - SMD version, device on PCB, minimal footprint RthJA - - 62 K/W - SMD version, device on PCB, 6 cm2 cooling area2) RthJA - - 45 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 Final Data Sheet 3 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 0.95 1.2 V VDS=VGS,ID=200µA - - 1 100 µA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C IGSS - - 100 nA VGS=12V,VDS=0V Drain-source on-state resistance RDS(on) - 3.4 2.1 4.5 2.6 mΩ VGS=2.5V,ID=50A VGS=4.5V,ID=50A Gate resistance RG - 1.5 - Ω - Transconductance gfs 95 190 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 20 - Gate threshold voltage VGS(th) 0.7 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 5900 7800 pF VGS=0V,VDS=10V,f=1MHz Coss - 1700 2300 pF VGS=0V,VDS=10V,f=1MHz Reverse transfer capacitance Crss - 250 380 pF VGS=0V,VDS=10V,f=1MHz Turn-on delay time td(on) - 21 - ns VDD=10V,VGS=4.5V,ID=50A, RG=1.6Ω Rise time tr - 115 - ns VDD=10V,VGS=4.5V,ID=50A, RG=1.6Ω Turn-off delay time td(off) - 52 - ns - Fall time tf - 9 - ns VDD=10V,VGS=4.5V,ID=50A, RG=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge1) 1) Gate charge at threshold Values Min. Typ. Max. Qgs - 11.4 15.2 nC VDD=10V,ID=30A,VGS=0to4.5V Qg(th) - 6 7.4 nC VDD=10V,ID=30A,VGS=0to4.5V Qgd - 7 10.8 nC VDD=10V,ID=30A,VGS=0to4.5V 1) Qsw - 13 18.6 nC VDD=10V,ID=30A,VGS=0to4.5V 1) Qg - 40 52.7 nC VDD=10V,ID=30A,VGS=0to4.5V Vplateau - 1.9 - V VDD=10V,ID=30A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 36 48.2 nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 23 - nC VDD=10V,VGS=0V 1) Gate to drain charge Switching charge Gate charge total Gate plateau voltage 1) 1) 2) Defined by design. Not subject to production test See figure 16 for gate charge parameter definition. Final Data Sheet 4 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 92 A TC=25°C - 536 A TC=25°C - 0.85 1.2 V VGS=0V,IF=50A,Tj=25°C - 28 - nC VR=10V,IF=IS,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 140 70 120 60 100 80 ID[A] Ptot[W] 50 40 60 30 40 20 20 10 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥4.5V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1µs 10 µs 100 µs 100 0.5 1 ms 0.2 10 ms 0.1 ZthJC[K/W] ID[A] 102 101 DC 10-1 0.05 0.02 0.01 100 10-1 10-1 10-2 100 101 102 10-3 single pulse 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 200 10 4V 9 175 3V 8 150 2.5 V 7 2.4 V RDS(on)[mW] ID[A] 125 100 75 6 2V 5 2.2 V 4 2.2 V 2.5 V 3 3V 50 2V 1 1.8 V 1.6 V 0 4V 4.5 V 25 0 3.5 V 2 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 100 300 250 75 gfs[S] ID[A] 200 50 150 100 25 25 °C 50 150 °C 0 0 1 2 3 0 0 VGS[V] 50 75 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 25 gfs=f(ID);Tj=25°C 7 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 5 1.6 4 1.2 2000 µA VGS(th)[V] RDS(on)[mΩ] 3 98% typ 2 200 µA 0.8 0.4 1 0 -60 -20 20 60 100 0.0 -60 140 -20 20 Tj[°C] 60 100 140 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=4.5V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 102 IF[A] C[pF] Coss 103 100 Crss 102 0 5 10 101 15 20 10-1 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 5 4 16 V 2 10 10 V 3 VGS[V] IAV[A] 25 °C 100 °C 125 °C 4V 2 1 10 1 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 24 VBR(DSS)[V] 22 20 18 16 -60 -20 20 60 100 140 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG Figure2OutlineTape(PG-TDSON-8),dimensionsinmm Final Data Sheet 11 Rev.2.0,2020-08-11 OptiMOSª2Power-Transistor,20V BSC026N02KSG RevisionHistory BSC026N02KS G Revision:2020-08-11,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-08-11 Update current rating and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2020-08-11