FS770R08A6P2BBPSA1

HybridPACK™DriveModule FS770R08A6P2B FinalDataSheet V3.0,2019-05-28 AutomotiveHighPower FS770R08A6P2B HybridPACK™DriveModule 1Features/Description HybridPACK™DrivemodulewithEDT2IGBTandDiode T T T VCES = 750 V IC = 770 A Typical Applications •Automotive Applications •Hybrid Electrical Vehicles (H)EV •Motor Drives •Commercial Agriculture Vehicles Description The HybridPACKTM Drive is a very compact six-pack module optimized for hybrid and electric vehicles. The product FS770R08A6P2FB comes with a flat baseplate and bonded cooling structure and is a 750V/770A module derivate within the HybridPACK Drive family. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. Electrical Features •Blocking voltage 750V •Low VCEsat •Low Switching Losses •Low Qg and Crss •Low Inductive Design •Tvj op = 150°C •Short-time extended Operation Temperature Tvj op = 175°C The new HybridPACKTM Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The products in the HybridPACK Drive family with flat baseplate FS660R08A6P2FB; PinFin baseplate FS820R08A6P2B as well as the FS770R08A6P2B derivate allow a very cost effective scaling for different inverter power levels at a minimum inverter design effort. Mechanical Features •4.2kV DC 1sec Insulation •High Creepage and Clearance Distances •Compact design •High Power Density •Direct Cooled Base Plate with Ribbon Bonds •Guiding elements for PCB and cooler assembly •Integrated NTC temperature sensor •PressFIT Contact Technology •RoHS compliant •UL 94 V0 module frame Product Name Ordering Code FS770R08A6P2B SP001706976 Final Data Sheet 2 V3.0,2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module 2 IGBT,Inverter 2.1 Maximum Rated Values Parameter Conditions Symbol Value Unit Collector-emitter voltage Tvj = 25°C VCES 750 V ICN 770 A Continuous DC collector current TF = 75°C, Tvj max = 175°C IC nom 4501) A Repetitive peak collector current tP = 1 ms ICRM 1540 A Total power dissipation TF = 75°C, Tvj max = 175°C Ptot 6541) W VGES +/-20 V Implemented collector current Gate-emitter peak voltage 2.2 Characteristic Values Collector-emitter saturation voltage min. IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V Tvj = 25°C Tvj = 150°C Tvj = 175°C VCE sat typ. max. 1.10 1.15 1.15 1.35 V IC = 770 A, VGE = 15 V IC = 770 A, VGE = 15 V Tvj = 25°C Tvj = 175°C Gate threshold voltage IC = 9.60 mA, VCE = VGE Tvj = 25°C Tvj = 175°C VGEth Gate charge VGE = -8 V ... 15 V, VCE = 400V QG 4.40 µC Tvj = 25°C RGint 0.7 Ω Internal gate resistor 1.28 1.44 4.90 5.80 4,10 6.50 V Input capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Tvj = 25°C Cies 80.0 nF Output capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Tvj = 25°C Coes 1.00 nF Reverse transfer capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Tvj = 25°C Cres 0.30 Collector-emitter cut-off current VCE = 750 V, VGE = 0 V VCE = 750 V, VGE = 0 V Tvj = 25°C Tvj = 175°C ICES Gate-emitter leakage current VCE = 0 V, VGE = 20 V Tvj = 25°C IGES Turn-on delay time, inductive load IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω Tvj = 25°C Tvj = 150°C Tvj = 175°C IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω Rise time, inductive load Turn-off delay time, inductive load Fall time, inductive load Turn-on energy loss per pulse Turn-off energy loss per pulse nA µs Tvj = 25°C Tvj = 150°C Tvj = 175°C tr 0.07 0.08 0.08 µs IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω Tvj = 25°C Tvj = 150°C Tvj = 175°C td off 0.94 1.05 1.05 µs IC = 450 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω Tvj = 25°C Tvj = 150°C Tvj = 175°C tf 0.04 0.05 0.06 µs IC = 450 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGon = 2.4 Ω di/dt (Tvj 25°C) = 5500 A/µs di/dt (Tvj 150°C) = 5000 A/µs Tvj = 25°C Tvj = 150°C Tvj = 175°C IC = 450 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGoff = 5.1 Ω dv/dt (Tvj 25°C) = 3100 V/µs dv/dt (Tvj 150°C) = 2500 V/µs Tvj = 25°C Tvj = 150°C Tvj = 175°C tP ≤ 6 µs, Tvj = 25°C tP ≤ 3 µs, Tvj = 175°C Eon 13.5 17.5 18.0 mJ Eoff 23.5 29.0 30.0 mJ Thermal resistance, junction to cooling fluid per IGBT; ∆V/∆t = 10 dm³/min, TF = 75°C RthJF Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op 3) 400 mA td on VGE ≤ 15 V, VCC = 400 V VCEmax = VCES -LsCE ·di/dt 2) 5 0.28 0.29 0.30 SC data 1) nF 1.0 4800 3900 ISC A 0.1302) 0.1532) K/W -40 150 1503) 175 °C Verified by characterization / design not by test. For Cooler design see application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet 3 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module 3 Diode, Inverter 3.1 Maximum Rated Values Parameter Conditions Symbol Value Unit Repetitive peak reverse voltage Tvj = 25°C VRRM 750 V Implemented forward current IFN 770 A Continuous DC forward current IF 4501) A Repetitive peak forward current tP = 1 ms I²t - value VR = 0 V, tP = 10 ms, Tvj = 150°C VR = 0 V, tP = 10 ms, Tvj = 175°C 3.2 IFRM 1540 A I²t 19000 16000 A²s A²s Characteristic Values Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy min. max. 1.65 Tvj = 25°C Tvj = 150°C Tvj = 175°C IF = 770 A, VGE = 0 V IF = 770 A, VGE = 0 V Tvj = 25°C Tvj = 175°C IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Tvj = 25°C Tvj = 150°C Tvj = 175°C IRM 250 350 370 A IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Qr 20.0 40.0 45.0 µC IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Erec 7.00 13.0 15.0 mJ VF V 1.65 1.55 Thermal resistance, junction to cooling fluid per diode; ∆V/∆t = 10 dm³/min, TF = 75°C RthJF Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op 4 typ. 1.45 1.30 1.25 IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V NTC-Thermistor 0.1852) 0.2172) K/W 1503) 175 -40 150 min. typ. °C max. Parameter Conditions Symbol Value Unit Rated resistance TC = 25°C R25 5.00 kΩ Deviation of R100 TC = 100°C, R100 = 493 Ω Power dissipation TC = 25°C B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K ∆R/R 5 P25 5 % 20.0 mW Specification according to the valid application note. 1) 2) 3) Verified by characterization / design not by test. For cooler design see application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet 4 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module 5 Module Parameter Conditions Isolation test voltage RMS, f = 0 Hz, t = 1 sec Maximum RMS module terminal current TF = 75°C, TCt = 105°C Symbol Value Unit VISOL 4.2 kV ItRMS 500 1) A Cu+Ni2) Material of module baseplate Al2O33) Internal isolation basic insulation (class 1, IEC 61140) Creepage distance terminal to heatsink terminal to terminal dCreep 9.0 9.0 mm Clearance terminal to heatsink terminal to terminal dClear 4.5 4.5 mm CTI Comperative tracking index min. Pressure drop in cooling circuit Maximum pressure in cooling circuit ∆V/∆t = 10.0 dm³/min; TF = 75°C Tbaseplate < 40°C Tbaseplate > 40°C (relative pressure) 8.0 RCC'+EE' TF = 25 °C, per switch Screw M4 baseplate to heatsink Screw EJOT Delta PCB to frame bar nH 0.75 mΩ Tstg -40 125 M 1.80 0.45 2.00 2.20 Nm 0.50 0.556) G Weight mbar 3.05) 2.5 LsCE Storage temperature Mounting torque for modul mounting 874) p Stray inductance module Module lead resistance, terminals - chip ∆p > 200 typ. max. 605 °C g 1) Continous, steady state. Verified by characterization / design not by test. Ni plated Cu baseplate. Improved Al2O3 ceramic. 4) For cooler design see application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol. 5) According to application note AN-HPD-ASSEMBLY. 6) EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY 2) 3) Final Data Sheet 5 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module 6 Characteristics Diagrams output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 15 V output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = 150°C 1500 1500 Tvj = 25°C Tvj = 150°C Tvj = 175°C 1400 1300 1300 1200 1100 1100 1000 1000 900 900 800 800 IC [A] 1200 IC [A] VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 1400 700 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 VCE [V] transfer characteristic IGBT,Inverter (typical) IC = f (VGE) VCE = 20 V 0,0 0,4 0,8 1,2 1,6 2,0 2,4 VCE [V] 2,8 3,2 3,6 4,0 800 900 switching losses IGBT,Inverter (typical) Eon = f (IC), Eoff = f (IC), VGE = +15 V / -8 V, RGon = 2.4 Ω, RGoff = 5.1 Ω, VCE = 400 V 1500 70 Tvj = 25°C Tvj = 150°C Tvj = 175°C 1400 1300 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C 60 1200 1100 50 1000 40 E [mJ] IC [A] 900 800 700 30 600 500 20 400 300 10 200 100 0 0 5 Final Data Sheet 6 7 8 9 VGE [V] 10 11 12 0 6 100 200 300 400 500 IC [A] 600 700 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 450 A, VCE = 400 V transient thermal impedance IGBT,Inverter ZthJF = f (t), cooler design according to AN-HPD-ASSEMBLY ∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol 140 1 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C 120 ZthJF : IGBT 100 0,1 E [mJ] ZthJF [K/W] 80 60 0,01 40 20 i: 1 2 3 4 ri[K/W]: 0,005 0,05 0,068 0,03 τi[s]: 0,001 0,03 0,25 1,5 0 0 2 4 6 8 10 12 14 RG [Ω] 16 18 20 22 0,001 0,001 24 reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) VGE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C 0,01 0,1 t [s] 1 10 thermal impedance IGBT,Inverter RthJF = f (∆V/∆t), cooler design according to AN-HPD-Assembly Tf = 75°C; 50% water / 50% ethylenglycol 1600 0,175 RthJF: IGBT 1500 1400 0,170 1300 1200 1100 0,165 1000 RthJF [K/W] IC [A] 900 800 700 0,160 600 0,155 500 400 300 IC, Modul IC, Chip 200 0,150 100 0 0,145 0 Final Data Sheet 100 200 300 400 500 VCE [V] 600 700 800 4 7 5 6 7 8 9 10 ∆V/∆t [dm³/min] 11 12 13 14 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module capacity characteristic IGBT,Inverter (typical) C = f(VCE) VGE = 0 V, Tvj = 25°C, f = 1MHz gate charge characteristic IGBT,Inverter (typical) VGE = f(QG) VCE = 400 V, IC = 450 A, Tvj = 25°C 100 15 QG Cies Coes Cres 12 9 10 C [nF] VGE [V] 6 3 0 1 -3 -6 0,1 -9 0 100 200 300 400 500 0 1 VCE [V] maximum allowed collector-emitter voltage VCES = f(Tvj), verified by characterization / design not by test ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C 2 3 4 5 QG [µC] forward characteristic of Diode, Inverter (typical) IF = f (VF) 800 1500 VCES 1400 1300 Tvj = 25°C Tvj = 150°C Tvj = 175°C 775 1200 1100 750 1000 IF [A] VCES [V] 900 725 800 700 600 700 500 400 300 675 200 100 650 -50 Final Data Sheet 0 -25 0 25 50 75 100 125 150 175 200 Tvj [°C] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 VF [V] 8 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module switching losses Diode, Inverter (typical) Erec = f (IF), RGon = 2.4 Ω, VCE = 400 V switching losses Diode, Inverter (typical) Erec = f (RG), IF = 450 A, VCE = 400 V 22 20 Erec, Tvj = 150°C Erec, Tvj = 175°C 20 Erec, Tvj = 150°C Erec, Tvj = 175°C 18 18 16 16 14 14 E [mJ] E [mJ] 12 12 10 10 8 8 6 6 4 4 2 2 0 0 0 100 200 300 400 500 IF [A] 600 700 800 900 transient thermal impedance Diode, Inverter ZthJF = f (t), cooler design according to AN-HPD-ASSEMBLY ∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol 0 2 4 6 8 10 12 14 RG [Ω] 16 18 20 22 24 thermal impedance Diode, Inverter RthJF = f (∆V/∆t), cooler design according to AN-HPD-ASSEMBLY Tf = 75°C; 50% water / 50% ethylenglycol 1 0,240 ZthJC : Diode RthJF: Diode 0,235 0,230 0,1 ZthJC [K/W] RthJF [K/W] 0,225 0,220 0,215 0,01 0,210 i: 1 2 3 4 ri[K/W]: 0,015 0,1 0,068 0,034 τi[s]: 0,001 0,03 0,25 1,5 0,001 0,001 Final Data Sheet 0,205 0,200 0,01 0,1 t [s] 1 10 4 9 5 6 7 8 9 10 ∆V/∆t [dm³/min] 11 12 13 14 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module NTC-Thermistor-temperature characteristic (typical) R = f (T) pressure drop in cooling circuit ∆p = f (∆V/∆t), cooler design according to AN-HPD-ASSEMBLY Tf = 75°C; 50% water / 50% ethylenglycol 100000 180 ∆p: Modul Rtyp 150 120 R[Ω] ∆p [mbar] 10000 1000 90 60 30 100 0 0 Final Data Sheet 20 40 60 80 100 TC [°C] 120 140 160 4 10 5 6 7 8 9 10 ∆V/∆t [dm³/min] 11 12 13 14 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module 7 Circuit diagram P1 P2 P3 T1 C1 C3 C5 T T2 G1 G3 G5 E1 E3 E5 U C2 T3 V C4 W T C6 T4 G2 G4 G6 E2 E4 E6 T5 T T6 N1 Final Data Sheet N2 N3 11 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module 8 Package outlines Final Data Sheet 12 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module 9 Label Codes 9.1 Module Code Code Format Data Matrix Encoding ASCII Text Symbol Size 16x16 Standard IEC24720 and IEC16022 Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1-5 6 - 11 12 - 19 20 - 21 22 - 23 Example (below) 71549 142846 55054991 15 30 Example 71549142846550549911530 9.2 Packing Code Code Format Code128 Encoding Code Set A Symbol Size 34 digits Standard IEC8859-1 Code Content Content Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X 1T S 9D Q Digit 2-9 12 - 19 21 - 25 28 - 31 33 - 34 Example (below) 95056609 2X0003E0 754389 1139 15 Example X950566091T2X0003E0S754389D1139Q15 Final Data Sheet 13 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module Revision History Major changes since previous revision Revision History Reference Date Description V1.0 2017-06-06 Target datasheet V2.0 2018-07-10 - V3.0 2019-05-28 - Final Data Sheet 14 V3.0, 2019-05-28 FS770R08A6P2B HybridPACK™ Drive Module Terms & Conditions of usage Edition 2018-08-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (http://www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review product requirements and reliability testing. Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Trademarks Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. 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VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last update Final Data Sheet 2011-11-11 15 V3.0, 2019-05-28 www.infineon.com Published by Infineon Technologies AG