FZ800R45KL3B5NOSA2

FZ800R45KL3_B5 Highly insulated module Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 4500 V - IC nom = 800 A / ICRM = 1600 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for increased thermal cycling capability - High creepage and clearance distances - Isolated base plate - Package with CTI > 600 - Package with enhanced insulation of 10.4 kV AC 60 s Potential applications • • • • • Motor drives Traction drives Multi-level inverter High-power converters Medium-voltage converters Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Datasheet 2 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 60 s 10.4 kV Partial discharge extinction voltage Visol RMS, f = 50 Hz, QPD ≤ 10 pC 3.5 kV 3000 V DC stability VCE(D) Tvj=25°C, 100 Fit Material of module baseplate AlSiC Internal isolation basic insulation (class 1, IEC 61140) AlN Creepage distance dCreep terminal to heatsink 64.0 mm Creepage distance dCreep terminal to terminal 56.0 mm Clearance dClear terminal to heatsink 40.0 mm Clearance dClear terminal to terminal 26.0 mm Comparative tracking index Table 2 CTI > 600 Characteristic values Parameter Symbol Note or test condition Values Min. Stray inductance module Module lead resistance, terminals - chip LsCE RCC'+EE' Storage temperature Tstg Mounting torque for module mounting M Terminal connection torque M Weight G Note: 2 Table 3 Max. 20 nH 0.18 mΩ -55 125 °C - Mounting according to M6, Screw valid application note 4.25 5.75 Nm - Mounting according to M4, Screw valid application note M8, Screw 1.8 2.1 Nm 8 10 1000 g Values Unit Tvj = -40 °C 4500 V Tvj = 25 °C 4500 Tvj = 125 °C 4500 The maximum allowed dv/dt measured between 0,6 and 1×Vce is 2400V/µs. IGBT, Inverter Maximum rated values Parameter Collector-emitter voltage (table continues...) Datasheet TC=25°C, per switch Typ. Unit Symbol Note or test condition VCES 3 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 2 IGBT, Inverter Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Continuous DC collector current ICDC Tvj max = 150 °C Repetitive peak collector current ICRM tp limited by Tvj op Gate-emitter peak voltage VGES Table 4 TC = 80 °C Values Unit 800 A 1600 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage VCE sat Gate threshold voltage VGEth Gate charge QG IC = 800 A, VGE = 15 V Typ. Max. Tvj = 25 °C 2.50 2.85 Tvj = 125 °C 3.10 3.70 6 6.60 IC = 70.5 mA, VCE = VGE, Tvj = 25 °C 5.40 V V VGE = ±15 V, VCE = 2800 V 26.5 µC Internal gate resistor RGint Tvj = 25 °C 1.1 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 185 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 3.1 nF Collector-emitter cut-off current ICES VCE = 4500 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 800 A, VCE = 2800 V, VGE = ±15 V, RGon = 1 Ω Tvj = 25 °C 0.580 Tvj = 125 °C 0.600 IC = 800 A, VCE = 2800 V, VGE = ±15 V, RGon = 1 Ω Tvj = 25 °C 0.190 Tvj = 125 °C 0.220 IC = 800 A, VCE = 2800 V, VGE = ±15 V, RGoff = 7.5 Ω Tvj = 25 °C 6.600 Tvj = 125 °C 6.900 IC = 800 A, VCE = 2800 V, VGE = ±15 V, RGoff = 7.5 Ω Tvj = 25 °C 0.350 Tvj = 125 °C 0.450 Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) tr tdoff tf Tvj = 25 °C Turn-on time (resistive load) ton_R IC = 500 A, VCE = 2000 V, VGE = ±15 V, RGon = 1 Ω Tvj = 25 °C 1.80 Turn-on energy loss per pulse Eon IC = 800 A, VCE = 2800 V, Lσ = 95 nH, VGE = ±15 V, RGon = 1 Ω, di/dt = 3300 A/µs (Tvj = 125 °C) Tvj = 25 °C 3100 Tvj = 125 °C 4100 5 mA 400 nA µs µs µs µs µs mJ (table continues...) Datasheet 4 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-off energy loss per pulse Eoff SC data ISC IC = 800 A, VCE = 2800 V, Lσ = 95 nH, VGE = ±15 V, RGoff = 7.5 Ω, dv/dt = 2000 V/µs (Tvj = 125 °C) Tvj = 25 °C 2800 Tvj = 125 °C 3400 VGE ≤ 15 V, VCC = 2800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 10 µs, Tvj ≤ 125 °C 4600 Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT Temperature under switching conditions Tvj op 3 Typ. Unit Max. mJ A 11.1 13.5 -50 K/kW K/kW 125 °C Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I 2t Maximum power dissipation PRQM Minimum turn-on time tonmin Table 6 Values Unit Tvj = -40 °C 4500 V Tvj = 25 °C 4500 Tvj = 125 °C 4500 800 A 1600 A Tvj = 125 °C 255 kA²s Tvj = 125 °C 1600 kW 10 µs Values Unit tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Min. Forward voltage Peak reverse recovery current VF IRM IF = 800 A, VGE = -15 V VR = 2800 V, IF = 800 A, VGE = -15 V, -diF/dt = 3300 A/µs (Tvj = 125 °C) Typ. Max. Tvj = 25 °C 2.50 3.10 Tvj = 125 °C 2.50 3.00 Tvj = 25 °C 1000 Tvj = 125 °C 1150 V A (table continues...) Datasheet 5 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 3 Diode, Inverter Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Recovered charge Reverse recovery energy Qr Erec VR = 2800 V, IF = 800 A, VGE = -15 V, -diF/dt = 3300 A/µs (Tvj = 125 °C) VR = 2800 V, IF = 800 A, VGE = -15 V, -diF/dt = 3300 A/µs (Tvj = 125 °C) Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode Temperature under switching conditions Tvj op Datasheet Typ. Tvj = 25 °C 770 Tvj = 125 °C 1400 Tvj = 25 °C 1200 Tvj = 125 °C 2400 Unit Max. µC mJ 25.5 21.0 -50 6 K/kW K/kW 125 °C Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 4 Characteristics diagrams 4 Characteristics diagrams Output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Inverter IC = f(VCE) Tvj = 125 °C 1600 1600 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 Transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 7.5 Ω, RGon = 1 Ω, VCE = 2800 V, VGE = ± 15 V 1600 11000 10000 1400 9000 1200 8000 7000 1000 6000 800 5000 600 4000 3000 400 2000 200 1000 0 0 5 Datasheet 6 7 8 9 10 11 12 0 7 200 400 600 800 1000 1200 1400 1600 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 4 Characteristics diagrams Switching losses (typical), IGBT, Inverter E = f(RG) IC = 800 A, VCE = 2800 V, VGE = ± 15 V Transient thermal impedance , IGBT, Inverter Zth = f(t) 100 15000 13500 12000 10500 10 9000 7500 6000 1 4500 3000 1500 0 0.1 0.001 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 125 °C 0.01 0.1 1 10 Capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 1000 kHz, VGE = 0 V, Tvj = 25 °C 1000 1800 1600 1400 100 1200 1000 800 600 10 400 200 0 1 0 Datasheet 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 8 10 20 30 40 50 60 70 80 90 100 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 4 Characteristics diagrams Gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) Tvj = 25 °C, IC = 800 A Forward characteristic (typical), Diode, Inverter IF = f(VF) 15 1600 12 1400 9 1200 6 1000 3 0 800 -3 600 -6 400 -9 200 -12 -15 0 0 4 8 12 16 20 24 28 0.0 Switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 2800 V, RGon = RGon(IGBT) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 2800 V, IF = 800 A 3200 2800 2800 2400 2400 2000 2000 1600 1600 1200 1200 800 800 400 400 0 0 0 Datasheet 200 400 600 800 1000 1200 1400 1600 0 9 1 2 3 4 5 6 7 8 9 10 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 4 Characteristics diagrams Transient thermal impedance, Diode, Inverter Zth = f(t) Safe operating area (SOA), Diode, Inverter IR = f(VR) Tvj = 125 °C 100 2000 1600 10 1200 800 1 400 0.1 0.001 Datasheet 0 0.01 0.1 1 0 10 10 1000 2000 3000 4000 5000 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 5 Circuit diagram 5 Circuit diagram Figure 1 Datasheet 11 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 6 Package outlines 6 Package outlines Figure 2 Datasheet 12 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module 7 Module label code 7 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 13 Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module Revision history Revision history Document revision Date of release Description of changes V1.0 2011-10-21 Target datasheet V1.1 2012-09-07 Target datasheet V2.0 2013-05-27 Preliminary datasheet V3.0 2013-05-27 Final datasheet V3.1 2013-05-28 Final datasheet V3.2 2018-01-15 Final datasheet V3.3 2019-08-23 Final datasheet n/a 2020-09-01 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.10 2021-10-25 Final datasheet 1.20 2022-07-17 Final datasheet Datasheet 14 Revision 1.20 2022-07-17 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-07-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAW981-009 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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