IDP30E60

IDP30E60 Fast Switching Diode Product Summary Features VRRM 600 V IF 30 A VF 1.5 V T jmax 175 °C • 600V diode technology • Fast recovery • Soft switching • Low reverse recovery charge PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications Type Package IDP30E60 PG-TO220-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D30E60 C A - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Parameter Symbol Symbol Value Value Repetitive peak reverse voltage Repetitive peak reverse voltage VRRM VRRM Continousforward forward current Continuous current TTCC==25°C 25C TTC ==90°C 90C IF IF 52.3 52.3 34.9 34.9 A Surge non repetitive forward current Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave I FSM IFSM 117 117 A Maximum repetitive forward current repetitive forward current TMaximum C = 25C, tp limited by tj,max, D = 0.5 IFRM I FRM 8181 A TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation dissipation TPower C = 25C PtotP t o t 142.9 80.9 142.9 600 600 Unit Unit VV A C TC=25°C, tp=10 ms, sine halfwave TTCC==25°C 90C Tj Operating TC=90°C junction temperature Storage temperature Operating and storage temperature Soldering temperature Soldering temperature 1.6mm (0.063 in.) from (0.063 case for 10from s case for 10s wavesoldering, 1.6mm in.) Rev.2.5 Page 1 Tstg Tj , T stg TS T S -40…+175 80.9 -55...+150 -55...+175 260 260 WW °C°C °C 2013­12­05 IDP30E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.05 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - 35 - @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics IR Reverse leakage current μA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 2500 VF Forward voltage drop V IF=30A, T j=25°C - 1.5 2 IF=30A, T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.5 Page 2 2013­12­05 IDP30E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics t rr Reverse recovery time ns V R=400V, IF=30A, diF/dt=1000A/μs, Tj=25°C - 126 - V R=400V, IF=30A, diF/dt=1000A/μs, Tj=125°C - 171 - V R=400V, IF=30A, diF/dt=1000A/μs, Tj=150°C - 178 - I rrm Peak reverse current A V R=400V, IF = 30A, diF/dt=1000A/μs, Tj =25°C - 19 - V R=400V, IF =30A, diF/dt=1000A/μs, T j=125°C - 22 - V R=400V, IF =30A, diF/dt=1000A/μs, T j=150°C - 24 - Q rr Reverse recovery charge nC V R=400V, IF=30A, diF/dt=1000A/μs, Tj=25°C - 1100 - V R=400V, IF =30A, diF/dt=1000A/μs, T j=125°C - 1950 - V R=400V, IF =30A, diF/dt=1000A/μs, T j=150°C - 2150 - V R=400V, IF=30A, diF/dt=1000A/μs, Tj=25°C - 4 - V R=400V, IF=30A, diF/dt=1000A/μs, Tj=125°C - 4.6 - V R=400V, IF=30A, diF/dt=1000A/μs, Tj=150°C - 4.8 - S Reverse recovery softness factor Rev.2.5 Page 3 2013­12­05 IDP30E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj≤ 175°C 55 150 W A 45 120 40 100 IF P tot 110 90 35 80 30 70 25 60 20 50 40 15 30 10 20 5 10 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 2 90 V A 70 1.8 -55°C 25°C 100°C 150°C 1.7 VF IF 60 60A 1.6 50 30A 1.5 40 1.4 30 1.3 15A 20 1.2 10 0 0 1.1 0.5 1 1.5 2.5 V VF Rev.2.5 Page 4 1 -60 -20 20 60 100 160 °C Tj 2013­12­05 IDP30E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 500 2600 ns nC 60A 2200 60A 30A 15A 350 Q rr trr 400 2000 300 1800 250 1600 200 1400 150 1200 100 200 300 400 500 600 700 800 1000 200 A/μs 1000 di F/dt 30A 15A 300 400 500 600 700 800 A/μs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 26 12 A 22 18 60A 30A 15A 60A 30A 15A 9 S Irr 20 10 8 16 7 14 6 12 5 10 4 8 6 200 Rev.2.5 300 400 500 600 700 800 3 200 A/μs 1000 di F/dt Page 5 300 400 500 600 700 800 A/μs 1000 diF/dt 2013­12­05 IDP30E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP30E60 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 0.02 10 -3 single pulse 10 -4 -7 10 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.5 Page 6 2013­12­05 IDP30E60 Package Outline: TO220-2 Rev.2.5 Page 7 2013­12­05 IDP30E60 Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.5 Page 8 2013­12­05