IKD06N60RA

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD06N60R 600VTRENCHSTOPTMRC-Seriesforhardswitchingapplications Datasheet IndustrialPowerControl IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant(forPG-TO252:solder temperature260°C,MSL1) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C Applications: G •Consumermotordrives E KeyPerformanceandPackageParameters Type IKD06N60R Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 6A 1.65V 175°C K06R60 PG-TO252-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Datasheet 3 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IC 12.0 6.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 18.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 18.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IF 12.0 6.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 18.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTc=25°C Ptot 100.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,1) junction - case Rth(j-c) - - 1.50 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 3.60 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) - - 50 K/W 1) 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. Datasheet 4 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=6.0A Tvj=25°C Tvj=175°C - 1.65 1.85 2.10 - V - 1.70 1.70 2.10 - V 4.3 5.0 5.7 V VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - 40 1000 µA StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=6.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.11mA,VCE=VGE Zero gate voltage collector current1) ICES Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=6.0A - 3.4 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 470 - - 24 - - 14 - VCC=480V,IC=6.0A, VGE=15V - 48.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz 46 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 7 - ns - 127 - ns - 152 - ns - 0.11 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.22 - mJ Total switching energy Ets - 0.33 - mJ 1) Tvj=25°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, RG(on)=23.0Ω,RG(off)=23.0Ω, Lσ=60nH,Cσ=40pF Lσ,CσfromFig.E Not subject to production test - verified by design/characterization Datasheet 5 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=6.0A, diF/dt=800A/µs dirr/dt - 68 - ns - 0.37 - µC - 12.0 - A - -211 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 12 - ns - 10 - ns - 164 - ns - 171 - ns - 0.20 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.36 - mJ Total switching energy Ets - 0.56 - mJ - 74 - ns - 0.80 - µC - 17.0 - A - -237 - A/µs Tvj=175°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, RG(on)=23.0Ω,RG(off)=23.0Ω, Lσ=60nH,Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=6.0A, diF/dt=800A/µs dirr/dt 6 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 4 3 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 10 2 1 tp=1µs 50µs 20µs 10µs 1 200µs 500µs DC 0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V, VGE=15/0V,rG=23Ω,PCBmounting,6cm2 Cu, Ptot=2,4W) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 110 100 12 80 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 90 70 60 50 40 30 10 8 6 4 20 2 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Datasheet 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 18 18 VGE=20V 16 VGE=20V 16 17V 17V 15V 15V 14 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 14 11V 12 9V 10 7V 8 6 9V 10 6 2 2 1 2 3 7V 8 4 0 11V 12 4 0 13V 0 4 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 3.5 VCEsat,COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 15 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 18 12 9 6 3 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] Figure 7. Typicaltransfercharacteristic (VCE=10V) Datasheet IC=3A IC=6A IC=12A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1000 1000 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr td(off) tf td(on) tr 100 10 1 2 4 6 8 10 100 10 1 12 10 20 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=23Ω,Dynamictestcircuitin Figure E) 50 60 70 80 7 td(off) tf td(on) tr 100 10 25 50 typ. min. max. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] 40 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=6A,Dynamictestcircuitin Figure E) 1000 1 30 rG,GATERESISTOR[Ω] 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=6A,rG=23Ω,Dynamictestcircuitin Figure E) Datasheet 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.11mA) 9 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1.0 0.8 Eoff Eon Ets 0.8 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 0.6 0.4 0.2 0.0 0 2 4 6 8 10 0.6 0.4 0.2 0.0 12 10 20 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=23Ω,Dynamictestcircuitin Figure E) 40 50 60 70 80 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=6A,Dynamictestcircuitin Figure E) 0.5 0.7 Eoff Eon Ets 0.6 0.4 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 30 rG,GATERESISTOR[Ω] 0.3 0.2 0.1 Eoff Eon Ets 0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 150 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=6A,rG=23Ω,Dynamictestcircuitin Figure E) Datasheet 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=6A,rG=23Ω,Dynamictestcircuitin Figure E) 10 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 16 1000 120V 480V Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 10 20 30 40 10 50 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=6A) 15 20 25 30 14 80 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 90 70 60 50 40 30 20 10 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 12 14 16 18 VGE,GATE-EMITTERVOLTAGE[V] Datasheet 10 8 6 4 2 0 20 Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) 12 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj≤150°C) 11 V2.5 2014-03-12 IKD06N60R Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 ri[K/W]: 0.1032 0.7299 0.5682 0.0638 τi[s]: 7.9E-5 4.0E-4 1.8E-3 0.0307 0.01 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 1.0958 1.6643 0.7461 0.0827 τi[s]: 7.9E-5 2.8E-4 1.7E-3 0.02494 0.01 1E-7 1 tp,PULSEWIDTH[s] 0.001 0.01 0.1 1 1.0 Tj=175°C, IF = 6A Tj=25°C, IF = 6A Qrr,REVERSERECOVERYCHARGE[µC] Tj=175°C, IF = 6A Tj=25°C, IF = 6A trr,REVERSERECOVERYTIME[ns] 1E-4 Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth2)(seepage4) (D=tp/T) 200 150 100 50 600 700 800 Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 0.8 0.6 0.4 0.2 0.0 500 900 diF/dt,DIODECURRENTSLOPE[A/µs] Datasheet 1E-5 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth1)(seepage4) (D=tp/T) 0 500 1E-6 600 700 800 900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) 12 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 20 0 Tj=175°C, IF = 6A Tj=25°C, IF = 6A 18 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj=175°C, IF = 6A Tj=25°C, IF = 6A 16 14 12 -100 -200 -300 10 8 500 600 700 800 -400 500 900 diF/dt,DIODECURRENTSLOPE[A/µs] 600 700 800 900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 18 2.5 16 IF=3A IF=6A IF=12A Tj=25°C, UG=0V Tj=175°C, UG=0V VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 14 12 10 8 6 2.0 1.5 4 2 0 0 1 2 1.0 3 VF,FORWARDVOLTAGE[V] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 13 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Package Drawing PG-TO252-3 A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 Datasheet DOCUMENT NO. Z8B00003328 MILLIMETERS DIM MIN 2.16 0.00 0.64 0.65 4,95 0.46 0.40 5.97 5.02 6.35 4.32 MAX 2.41 0.15 0.89 1.15 5.50 0.61 0.98 6.22 5.84 6.73 5.21 2.29 (BSC) 4.57 (BSC) SCALE 2.5 0 2.5 5mm EUROPEAN PROJECTION 3 9.40 1.18 0.89 0.51 0 ISSUE DATE 05-02-2016 10.48 1.78 1.27 1.02 REVISION 06 14 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 15 V2.5 2014-03-12 IKD06N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications RevisionHistory IKD06N60R Revision:2014-03-12,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 1.2 2010-01-12 - 2.1 2011-01-17 Release of final datasheet 2.2 2013-02-19 Change package 2.3 2013-12-10 Neu value ICES max limit at 175°C 2.4 2014-02-26 Without PB free logo 2.5 2014-03-12 Storage temp -55...+150°C Datasheet 16 V2.5 2014-03-12 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.     Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2018. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.