IKD15N60RBTMA1

IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD15N60R 600VTRENCHSTOPTMRC-Seriesforhardswitchingapplications Datasheet IndustrialPowerControl IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage  Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimisedVCEsatandVFforlowconductionlosses •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant(forPG-TO252:solder temperature260°C,MSL1) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C G Applications: E •Consumermotordrives KeyPerformanceandPackageParameters Type IKD15N60R VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 15A 1.65V 175°C K15R60 PG-TO252-3 2 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 45.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 30.0 15.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 250.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,1) junction - case Rth(j-c) 0.60 K/W Diode thermal resistance,2) junction - case Rth(j-c) 2.00 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 1) 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 4 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=15.0A Tvj=25°C Tvj=175°C - 1.65 1.85 2.10 - V - 1.70 1.70 2.10 - V 4.3 5.0 5.7 V VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.25mA,VCE=VGE Zero gate voltage collector current1) ICES 40.0 µA 1000.0 Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=15.0A - 9.4 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 961 - - 53 - - 33 - VCC=480V,IC=15.0A, VGE=15V - 90.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz pF 112 SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 16 - ns - 10 - ns - 183 - ns - 136 - ns - 0.37 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.53 - mJ Total switching energy Ets - 0.90 - mJ 1) Tvj=25°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, rG=15.0Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E Not subject to production test - verified by design/characterization 5 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1300A/µs dirr/dt - 110 - ns - 0.76 - µC - 20.5 - A - -1640 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 15 - ns - 11 - ns - 212 - ns - 218 - ns - 0.41 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.84 - mJ Total switching energy Ets - 1.25 - mJ - 190 - ns - 1.70 - µC - 27.0 - A - -280 - A/µs Tvj=175°C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, rG=15.0Ω,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1300A/µs dirr/dt 6 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 12 11 9 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 10 8 7 6 5 4 3 10 tp=1µs 10µs 20µs 50µs 1 200µs 500µs DC 2 1 0 Ptot=8,6W, Rthja=8K/W 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C, Ta=55°C, D=0.5, VCE=400V, VGE=15/0V, rG=15Ω, PCB mounting with thermal vias and heatsink, see Appnote: www.infineon.com/igbt) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 250 35 30 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 200 150 100 25 20 15 10 50 5 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 45 45 40 40 35 VGE=20V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 35 17V 30 15V 13V 25 11V 20 9V 7V 15 17V 30 11V 5 2 3 0 4 9V 7V 15 5 1 13V 20 10 0 15V 25 10 0 VGE=20V 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 3 4 3.5 Tj=25°C Tj=175°C VCEsat,COLLECTOR-EMITTERSATURATION[V] 40 35 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 45 30 25 20 15 10 5 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] IC=7.5A IC=15A IC=30A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=10V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 1000 1000 100 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr td(off) tf td(on) tr 10 1 0 5 10 15 20 25 100 10 1 30 0 10 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 40 50 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 30 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 1000 100 10 1 20 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 6 5 4 3 2 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) typ. min. max. 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.25mA) 9 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 2.5 1.8 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 1.5 1.2 0.9 0.6 0.3 0.0 30 0 10 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 40 50 1.5 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 30 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 1.5 1.0 0.5 0.0 20 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 0.5 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) 1.0 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=15A,rG=15Ω,Dynamictestcircuitin Figure E) Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 16 120V 480V 1000 Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 20 40 60 80 10 100 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=15A) 15 20 25 30 14 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 175 150 125 100 75 50 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 12 14 16 18 12 10 8 6 4 2 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj≤150°C) 11 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse i: 1 2 3 4 ri[K/W]: 0.0478 0.3033 0.2438 0.0281 τi[s]: 9.7E-5 4.4E-4 2.0E-3 0.03723 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 i: 1 2 3 4 ri[K/W]: 0.393 1.0808 0.4767 0.0568 τi[s]: 1.2E-4 3.4E-4 1.9E-3 0.02678 0.1 0.01 1E-7 1 1E-6 1E-5 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth1)(seepage4) (D=tp/T) 0.01 0.1 1 2.00 Tj=175°C, IF = 15A Tj=25°C, IF = 15A Tj=175°C, IF = 15A Tj=25°C, IF = 15A Qrr,REVERSERECOVERYCHARGE[µC] 200 trr,REVERSERECOVERYTIME[ns] 0.001 Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth2)(seepage4) (D=tp/T) 225 175 150 125 100 75 1000 1E-4 tp,PULSEWIDTH[s] 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] 1.75 1.50 1.25 1.00 0.75 0.50 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications 30.0 0 Tj=175°C, IF = 15A Tj=25°C, IF = 15A 27.5 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj=175°C, IF = 15A Tj=25°C, IF = 15A 25.0 22.5 -400 -800 -1200 20.0 -1600 17.5 15.0 1000 1100 1200 1300 1400 -2000 1000 1500 diF/dt,DIODECURRENTSLOPE[A/µs] 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 45 2.5 Tj=25°C, UG=0V IF=7.5A IF=15A IF=30A Tj=175°C, UG=0V 40 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 35 30 25 20 15 2.0 1.5 10 5 0 0 1 2 1.0 3 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications PG - TO252 - 3 14 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 15 Rev.2.4,2014-03-12 IKD15N60R TRENCHSTOPTMRC-Seriesforhardswitchingapplications RevisionHistory IKD15N60R Revision:2014-03-12,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 0.1 2010-02-01 - 2.1 2011-01-17 Release of final datasheet 2.2 2013-02-19 Change package 2.3 2014-02-26 Without PB free logo 2.4 2014-03-12 Storage temp -55...+150°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.4,2014-03-12