TRENCHSTOPTM Series
IKP04N60T
q
Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology
with soft, fast recovery anti-parallel Emitter Controlled HE diode
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C
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5µs
Designed for:
- Frequency Converters
- Drives
TM
TRENCHSTOP and Fieldstop technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
1)
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Type
IKP04N60T
G
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
600V
4A
1.5V
175°C
K04T60
PG-TO220-3
E
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj ≥ 25°C
VCE
600
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
9.5
6.5
Pulsed collector current, tp limited by Tjmax
ICpuls
12
Turn off safe operating area, VCE = 600V, Tj = 175°C, tp = 1µs
-
12
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
IF
9.5
6.5
Diode pulsed current, tp limited by Tjmax
IFpuls
12
Gate-emitter voltage
VGE
±20
V
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
tSC
5
µs
Power dissipation TC = 25°C
Ptot
42
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
V
A
2)
Short circuit withstand time
1)
2)
°C
260
J-STD-020 and JESD-022
Allowed number of short circuits: 1s.
IFAG IPC TD VLS
1
Rev. 2.8 17.02.2016
TRENCHSTOPTM Series
IKP04N60T
q
Thermal Resistance
Parameter
Symbol
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Conditions
Max. Value
RthJC
3.5
RthJCD
5
RthJA
62
Unit
K/W
Electrical Characteristic, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
T j=25° C
-
1.5
2.05
T j=175° C
-
1.9
-
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V, IC=0.2mA
VGE = 15V, IC=4A
Collector-emitter saturation voltage
VCE(sat)
V
VGE=0V, IF=4A
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
T j=25° C
-
1.65
2.05
T j=175° C
-
1.6
-
4.1
4.9
5.7
-
-
40
IC= 60µA,VCE=VGE
VCE=600V, VGE=0V
Zero gate voltage collector current
ICES
T j=25° C
T j=175° C
µA
-
-
1000
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=4A
-
2.2
-
S
Integrated gate resistor
RG in t
Ω
-
Dynamic Characteristic
Cies
VCE=25V,
-
Output capacitance
Coes
VGE=0V,
Reverse transfer capacitance
Cres
f=1MHz
Gate charge
QGate
VCC=480V, IC=4A
-
Input capacitance
Internal emitter inductance
measured 5mm (0.197 in.) from case
1)
Short circuit collector current
1)
-
-
20
-
-
7.5
-
VGE=15V
-
LE
IC(SC)
252
V G E = 1 5 V , t S C ≤ 5 µs
VCC = 400V,
T j ≤ 150° C
27
7
-
-
pF
nC
nH
36
A
Allowed number of short circuits: 1s.
IFAG IPC TD VLS
2
Rev. 2.8 17.02.2016
TRENCHSTOPTM Series
IKP04N60T
q
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
14
-
-
7
-
-
164
-
-
43
-
-
61
-
-
84
-
-
145
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 °C ,
V C C = 40 0 V, I C = 4 A,
V G E = 0/ 15 V ,
R G = 4 7Ω ,
1)
L σ =1 5 0n H,
1)
C σ = 4 7p F
Energy losses include
“tail” and diode
reverse recovery.
Diode reverse recovery time
trr
T j =2 5 °C ,
-
28
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 4 A,
-
79
-
nC
Diode peak reverse recovery current
Irrm
d i F / d t =6 1 0 A/ µs
-
5.3
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
ns
µJ
Anti-Parallel Diode Characteristic
-
346
-
A/µs
Switching Characteristic, Inductive Load, at Tj=175°C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
14
-
-
10
-
-
185
-
-
83
-
-
99
-
-
97
-
-
196
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =1 7 5° C,
V C C = 40 0 V, I C = 4 A,
V G E = 0/ 15 V ,
R G = 4 7Ω
1)
L σ =1 5 0n H,
1)
C σ = 4 7p F
Energy losses include
“tail” and diode
reverse recovery.
Diode reverse recovery time
trr
T j =1 7 5° C
-
95
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 4 A,
-
291
-
nC
Diode peak reverse recovery current
Irrm
d i F / d t =6 1 0 A/ µs
-
6.6
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
ns
µJ
Anti-Parallel Diode Characteristic
1)
-
253
-
A/µs
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.8 17.02.2016
TRENCHSTOPTM Series
t p=2µs
10A
12A
10A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
IKP04N60T
q
T C =80°C
8A
T C =110°C
6A
4A
Ic
2A
10µs
1A
50µs
1ms
0.1A
Ic
DC
10ms
0A
10H z
100H z
1kH z
10kH z
1V
100kH z
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/15V, RG = 47Ω)
1000V
8A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=0/15V)
40W
30W
20W
10W
0W
25°C
10V
6A
4A
2A
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
IFAG IPC TD VLS
4
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Rev. 2.8 17.02.2016
TRENCHSTOPTM Series
8A
10A
V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
15V
13V
6A
11V
9V
4A
7V
2A
V G E =20V
8A
15V
13V
6A
11V
9V
4A
7V
2A
0A
0A
0V
1V
2V
3V
0V
8A
6A
4A
2A
T J = 1 7 5 °C
2 5 °C
0A
0V
2V
4V
6V
2V
2.5V
3V
IC =8A
2.0V
1.5V
IC =4A
1.0V
IC =2A
0.5V
0.0V
0°C
8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
IFAG IPC TD VLS
1V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
IKP04N60T
q
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.8 17.02.2016
TRENCHSTOPTM Series
IKP04N60T
q
t d(off)
t d(off)
tf
t d(on)
10ns
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tr
100ns
tf
t d(on)
10ns
tr
1ns
0A
2A
4A
50Ω
6A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω,
Dynamic test circuit in Figure E)
100Ω
150Ω
200Ω
250Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
t d(off)
100ns
t, SWITCHING TIMES
tf
t d(on)
10ns
tr
25°C
50°C
75°C
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
0V
-50°C
100°C 125°C 15 0°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG=47Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 60µA)
6
Rev. 2.8 17.02.2016
TRENCHSTOPTM Series
*) E on and E ts include losses
*) E on an d E ts in c lu d e lo s s es
due to diode recovery
E ts *
0 .3m J
E off
0 .2m J
E on*
0 .1m J
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
d u e to d io de re c ov e ry
0.4 mJ
E ts*
0.3 mJ
E off
0.2 mJ
E on*
0.1 mJ
0.0 mJ
0 .0m J
0A
2A
4A
25Ω 50Ω
6A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
due to diode recovery
E ts *
100µJ
E off
75µJ
50µJ
E on *
25µJ
0µJ
25°C
50°C
75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
150Ω
200Ω
250Ω
*) E on a nd E ts inc lud e lo ss es
150µJ
125µJ
100Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
*) E on and E ts include losses
175µJ
IKP04N60T
q
d ue to diod e rec ov ery
0.2 5m J
0.2 0m J
E ts *
0.1 5m J
0.1 0m J E off
0.0 5m J
E on *
0.0 0m J
30 0V
35 0V
4 00 V
4 50 V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.8 17.02.2016
TRENCHSTOPTM Series
IKP04N60T
q
15V
120V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
Cies
480V
10V
100pF
Coes
5V
10pF
0V
0nC
5 nC
Cres
0V
10nC 15nC 20nC 25nC 30nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=4A)
10V 20V 30V 40V 50V 60V 70V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1MHz)
60A
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
1 2µs
50A
40A
30A
20A
10A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
1 0V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
IFAG IPC TD VLS
1 0µs
11V
1 2V
13V
1 4V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax