IPA028N08N3 G
OptiMOS(TM)3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
VDS
80
V
RDS(on),max
2.8
mW
ID
89
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPA028N08N3 G
Package
PG-TO-220-FP
Marking
028N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
89
T C=100 °C
62
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
352
Avalanche energy, single pulse4)
E AS
I D=89 A, R GS=25 W
1430
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
42
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
55/175/56
1)
J-STD20 and JESD22
Current is limited by package; with an RthJC=0.5K/W in a standard TO-220 package the chip is able
to carry 251A.
2)
3)
4)
See figure 3 for more detailed information
See figure 13 for more detailed information
Rev. 2.1
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2013-08-26
IPA028N08N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
3.6
Thermal characteristics
Thermal resistance, junction - case
R thJC
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
80
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=270 µA
2
2.8
3.5
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=80 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=89 A
-
2.4
2.8
mW
V GS=6 V, I D=44 A
-
2.8
4.2
-
2.7
-
W
89
178
-
S
Gate resistance
RG
Transconductance
g fs
Rev. 2.1
|V DS|>2|I D|R DS(on)max,
I D=89 A
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IPA028N08N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
10700
14200 pF
-
2890
3840
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
100
-
Turn-on delay time
t d(on)
-
30
-
Rise time
tr
-
59
-
Turn-off delay time
t d(off)
-
77
-
Fall time
tf
-
26
-
Gate to source charge
Q gs
-
50
-
Gate to drain charge
Q gd
-
30
-
Switching charge
Q sw
-
50
-
Gate charge total
Qg
-
155
206
Gate plateau voltage
V plateau
-
4.6
-
Output charge
Q oss
-
210
279
nC
-
-
89
A
-
-
356
-
0.9
1.2
V
-
78
-
ns
-
181
-
nC
V GS=0 V, V DS=40 V,
f =1 MHz
V DD=40 V, V GS=10 V,
I D=89 A, R G,ext=1.6 W
ns
Gate Charge Characteristics5)
V DD=40 V, I D=89 A,
V GS=0 to 10 V
V DD=40 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
T C=25 °C
V GS=0 V, I F=89 A,
T j=25 °C
V R=40 V, I F=I S,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.1
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IPA028N08N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
100
40
80
30
60
ID [A]
Ptot [W]
50
20
40
10
20
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
200
101
limited by on-state
resistance
1 µs
10 µs
100 µs
102
0.5
1 ms
100
10 ms
0.2
ZthJC [K/W]
101
ID [A]
DC
100
0.1
0.05
10-1
0.02
0.01
10-1
single pulse
10-2
10-2
10-1
100
101
102
10-4
10-3
10-2
10-1
100
101
tp [s]
VDS [V]
Rev. 2.1
10-5
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IPA028N08N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
350
10
7V
10 V
6V
300
8
4.5 V
5V
5.5 V
5.5 V
RDS(on) [mW]
250
ID [A]
200
150
5V
6
4
6V
100
7V
10 V
2
4.5 V
50
0
0
0
1
2
3
4
5
0
50
100
VDS [V]
150
200
250
300
350
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
300
240
250
200
200
160
gfs [S]
ID [A]
parameter: T j
150
100
80
175 °C
25 °C
50
40
0
0
0
2
4
6
8
VGS [V]
Rev. 2.1
120
0
40
80
120
160
ID [A]
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IPA028N08N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=89 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
6
4
5
3
2700 µA
270 µA
VGS(th) [V]
RDS(on) [mW]
4
max
3
typ
2
2
1
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
105
103
Ciss
104
175 °C, 98%
Coss
102
25 °C
IF [A]
C [pF]
175 °C
103
25 °C, 98%
Crss
101
102
101
100
0
20
40
60
80
VDS [V]
Rev. 2.1
0
0.5
1
1.5
2
VSD [V]
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IPA028N08N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=89A pulsed
parameter: T j(start)
parameter: V DD
1000
12
40 V
10
20 V
150 °C
100 °C
VGS [V]
8
IAV [A]
100
60 V
25 °C
10
6
4
2
1
0
1
10
100
1000
10000
0
50
tAV [µs]
100
150
200
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
90
V GS
Qg
85
VBR(DSS) [V]
80
75
V gs(th)
70
65
Q g(th)
Q sw
Q gs
60
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.1
page 7
2013-08-26
IPA028N08N3 G
PG-TO-220-FP
Rev. 2.1
page 8
2013-08-26
IPA028N08N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
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Rev. 2.1
page 9
2013-08-26