IPA057N08N3GXKSA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,80V OptiMOS™3Power-Transistor IPA057N08N3G DataSheet Rev.2.2 Final PowerManagement&Multimarket IPA057N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) VDS 80 V RDS(on),max 5.7 mW ID 60 A • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 • Fully isolated package (2500 VAC; 1 minute) Type IPA057N08N3 G Package PG-TO220-FP Marking 057N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 60 T C=100 °C 43 Unit A Pulsed drain current3) I D,pulse T C=25 °C 240 Avalanche energy, single pulse4) E AS I D=60 A, R GS=25 W 290 mJ Gate source voltage V GS ±20 V Power dissipation P tot 39 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 Current is limited by package; with an RthJC=1 K/W in a standard TO-220 package the chip is able to carry 119A. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information 2) Rev. 2.2 page 1 2015-08-27 IPA057N08N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 3.8 Thermal characteristics Thermal resistance, junction - case R thJC K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 2.8 3.5 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=80 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=60 A - 4.9 5.7 mW V GS=6 V, I D=30 A - 6.3 9.9 - 2.2 - W 45 90 - S Gate resistance RG Transconductance g fs Rev. 2.2 |V DS|>2|I D|R DS(on)max, I D=60 A page 2 2015-08-27 IPA057N08N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 3570 4750 - 963 1280 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 36 - Turn-on delay time t d(on) - 17 - Rise time tr - 42 - Turn-off delay time t d(off) - 36 - Fall time tf - 9 - Gate to source charge Q gs - 18 - Gate to drain charge Q gd - 10 - Switching charge Q sw - 18 - Gate charge total Qg - 52 69 Gate plateau voltage V plateau - 5.0 - Output charge Q oss - 70 93 nC - - 60 A - - 240 - 1.0 1.2 V - 64 - ns - 121 - nC V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=60 A, R G,ext=1.6 W pF ns Gate Charge Characteristics5) V DD=40 V, I D=60 A, V GS=0 to 10 V V DD=40 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 °C V GS=0 V, I F=60 A, T j=25 °C V R=40 V, I F=I S, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2015-08-27 IPA057N08N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 50 80 40 60 ID [A] Ptot [W] 30 40 20 20 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 0.5 10 µs 102 100 100 µs ZthJC [K/W] 0.2 ID [A] 1 ms 10 ms DC 101 0.1 0.05 10-1 0.02 0.01 single pulse 100 10-2 10-1 100 101 102 VDS [V] Rev. 2.2 10-5 10-4 10-3 10-2 10-1 100 101 tp [s] page 4 2015-08-27 IPA057N08N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 240 8V 10 V 20 6.5 V 7V 200 16 RDS(on) [mW] ID [A] 4.5 V 6V 160 120 5.5 V 6V 5.5 V 5V 12 8 6.5 V 80 7V 8V 5V 10 V 4 40 4.5 V 0 0 0 1 2 3 4 0 5 40 80 VDS [V] 120 160 200 240 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 160 150 120 gfs [S] ID [A] 120 90 80 60 175 °C 25 °C 40 30 0 0 0 2 4 6 8 VGS [V] Rev. 2.2 0 40 80 120 160 ID [A] page 5 2015-08-27 IPA057N08N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=60 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 12 4 10 3 900 µA 90 µA max VGS(th) [V] RDS(on) [mW] 8 6 typ 2 4 1 2 0 0 -60 -20 20 60 100 140 -60 180 -20 20 60 100 140 180 Tj [°C] Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss Coss 102 102 175 °C 25 °C, 98% 101 Crss 101 100 0 20 40 60 80 VDS [V] Rev. 2.2 175 °C, 98% 25 °C IF [A] C [pF] 103 0 0.5 1 1.5 2 VSD [V] page 6 2015-08-27 IPA057N08N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=60 A pulsed parameter: T j(start) parameter: V DD 100 12 40 V 10 150 °C 100 °C 20 V 25 °C 60 V VGS [V] IAV [A] 8 10 6 4 2 1 0 0.1 1 10 100 1000 0 20 tAV [µs] 40 60 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 90 V GS Qg 85 VBR(DSS) [V] 80 75 V gs(th) 70 65 Q g(th) Q sw Q gs 60 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.2 page 7 2015-08-27 IPA057N08N3 G PG-TO-220-3-31 Rev. 2.2 page 8 2015-08-27 OptiMOS™3Power-Transistor IPA057N08N3G RevisionHistory IPA057N08N3 G Revision:2015-08-27,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2015-08-27 Update features: "Fully isolated package..." 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Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 10 Rev.2.2,2015-08-27