MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,80V
OptiMOS™3Power-Transistor
IPA100N08N3G
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
IPA100N08N3 G
OptiMOS(TM)3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
VDS
80
V
RDS(on),max
10
mW
ID
40
A
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
• Fully isolated package (2500 VAC; 1 minute)
Type
IPA100N08N3 G
Package
PG-TO220-FP
Marking
100N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
40
T C=100 °C
30
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
160
Avalanche energy, single pulse4)
E AS
I D=40 A, R GS=25 W
110
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
35
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
55/175/56
1)
J-STD20 and JESD22
Current is limited by package; with an RthJC=1.5 K/W in a standard TO-220 package the chip is able
to carry 72A.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
2)
Rev. 2.2
page 1
2015-08-26
IPA100N08N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
4.3
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
80
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=46 µA
2
2.8
3.5
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=80 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=40 A
-
8.4
10
mW
V GS=6 V, I D=20 A
-
10.9
18.2
-
1.6
-
W
28
55
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=40 A
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2015-08-26
IPA100N08N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1810
2410
-
490
652
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
20
-
Turn-on delay time
t d(on)
-
13
-
Rise time
tr
-
30
-
Turn-off delay time
t d(off)
-
23
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
9
-
Gate to drain charge
Q gd
-
5
-
Switching charge
Q sw
-
10
-
Gate charge total
Qg
-
26
35
Gate plateau voltage
V plateau
-
5.1
-
Output charge
Q oss
-
35
47
nC
-
-
40
A
-
-
160
-
1.0
1.2
V
-
57
-
ns
-
91
-
nC
V GS=0 V, V DS=40 V,
f =1 MHz
V DD=40 V, V GS=10 V,
I D=40 A, R G,ext=1.6 W
pF
ns
Gate Charge Characteristics6)
V DD=40 V, I D=40 A,
V GS=0 to 10 V
V DD=40 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
6)
T C=25 °C
V GS=0 V, I F=40 A,
T j=25 °C
V R=40 V, I F=40A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2015-08-26
IPA100N08N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
40
50
40
30
ID [A]
Ptot [W]
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
0.5
1 µs
102
100
ZthJC [K/W]
ID [A]
10 µs
100 µs
1 ms
10 ms
101
0.2
0.1
0.05
0.02
10-1
0.01
DC
single pulse
100
10-2
10-1
100
101
102
VDS [V]
Rev. 2.2
10-5
10-4
10-3
10-2
10-1
100
101
tp [s]
page 4
2015-08-26
IPA100N08N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
160
20
10 V
8V
7V
5V
6V
5.5 V
6.5 V
6.5 V
16
120
RDS(on) [mW]
ID [A]
6V
80
5.5 V
12
7V
8V
10 V
8
40
4
5V
4.5 V
0
0
0
1
2
3
4
5
0
40
VDS [V]
80
120
160
120
160
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
160
120
120
gfs [S]
ID [A]
80
80
40
40
175 °C
25 °C
0
0
0
2
4
6
8
VGS [V]
Rev. 2.2
0
40
80
ID [A]
page 5
2015-08-26
IPA100N08N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=40 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
20
4
15
3
460 µA
max
46 µA
VGS(th) [V]
RDS(on) [mW]
parameter: I D
10
typ
5
2
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
103
102
Coss
IF [A]
C [pF]
25 °C
102
175 °C
175 °C, max
101
25 °C, max
Crss
101
100
0
20
40
60
80
VDS [V]
Rev. 2.2
0
0.5
1
1.5
2
VSD [V]
page 6
2015-08-26
IPA100N08N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=40 A pulsed
parameter: T j(start)
parameter: V DD
100
12
40 V
10
16 V
100 °C
25 °C
8
VGS [V]
IAV [A]
150 °C
64 V
10
6
4
2
1
0
0.1
1
10
100
1000
0
10
tAV [µs]
20
30
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
90
V GS
Qg
85
VBR(DSS) [V]
80
75
V gs(th)
70
65
Q g(th)
Q sw
Q gs
60
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.2
page 7
2015-08-26
IPA100N08N3 G
PG-TO220-3-FP
Rev. 2.2
page 8
2015-08-26
OptiMOS™3Power-Transistor
IPA100N08N3G
RevisionHistory
IPA100N08N3 G
Revision:2015-08-27,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.2
2015-08-27
Update features: "Fully isolated package..."
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
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10
Rev.2.2,2015-08-27